Ranges of low-and medium-energy heavy ions in an amorphous material

A theory of the passage of ions in an amorphous material is developed with elastic and inelastic stopping processes taken into account. Inelastic stopping of ions is studied in the continuous deceleration approximation. Elastic stopping is studied with allowance for the discrete character of the change in energy and direction of motion of the ions in elastic scattering by the target atoms. Integral equations are obtained for the total and projected ion ranges. Expressions are obtained for the probability of a change in ion energy in elastic and inelastic stopping. Calculations of the projected ranges of Cu and Ga ions in Si and C targets are performed. The computational results agree well with experiment. Zh. Tekh. Fiz. 69, 93–97 (February 1999)     

Stopping cross sections of 50- to 230-keV nitrogen ions in silicon measured by ion backscattering spectroscopy

The energy dependence of the total stopping cross section of 50- to 230-keV nitrogen ions in silicon (σ _S (E)) is measured in order to develop the diagnostics of heavy impurities in films of a nanometer thickness by heavy ion backscattering (HIBS) spectroscopy. At ion energies lower than 150 keV, this σ _S (E) dependence occupies an intermediate position between the dependences given in the SRIM and MSTAR data-bases; at higher energies, our dependence is closer to the former dependence. The estimation of the effect of inelastic processes on the stopping cross section demonstrates that the effect of these processes for nitrogen ions can be neglected when heavy impurities in such films are studied by HIBS.     

Cathodoluminescence during epitaxy in Rb-ion irradiated α-quartz

Implanting photoactive ions into quartz or silica is a simple and efficient way to tune the luminescence light used for various optoelectronic applications. However, such ion implantation damages or even destroys the crystalline order in quartz. We report here on cathodoluminescence of α-quartz after 175 keV Rb-ion implantation and epitaxial growth when annealing the samples in air or ¹⁸ O ₂. In the cathodoluminescence spectra taken at room temperature, five bands were identified. In addition to three intrinsic bands at 2.40, 2.79, and 4.30 eV, which are related to the quartz and/or silica matrix, two strong violet sub-bands at 3.25 and 3.65 eV were observed, which appear to be strongly correlated with the presence of alkali ions and/or the degree of epitaxy of the matrix. Their properties and origin are discussed in relation to similar bands observed after Ba, Ge, and Na ion implantation. PACS 61.80.Jh; 81.15.Np; 42.70.Ce     

Stopping power and straggling of energetic light ion beams in yttrium

Energy loss and straggling for protons, deuterons and α-particles in yttrium were measured in the energy region between 0.15 MeV and 2.5 MeV. The measured stopping powers of the hydrogen ions agree reasonably well with the semi-empirical values of Andersen and Ziegler, although better agreement was found with the values of Janni. For helium ions there are a marked difference with the values of Ziegler. Below 200 keV/amu the stopping ratios of the helium and hydrogen ions are lower than Ziegler's master curve. The straggling values of the hydrogen ions are about 15% lower than the Bohr estimate, while the straggling of the helium ions reach the Bohr value at about 0.2 MeV/amu.     

Experimental and theoretical determination of the stopping power of ZrO<Subscript>2</Subscript> films for protons and <Emphasis Type="Italic">α</Emphasis>-particles

We report the results of an experimental-theoretical study on the stopping power of ZrO₂ films for swift H and He ion beams. The experiments, using the Rutherford Backscattering technique, were done for protons with incident energies in the range 200–1500 keV and for α-particle beams with energies in the range 160–3000 keV. The theoretical calculations were done in the framework of the dielectric formalism using the MELF-GOS model to account for the ZrO₂ target electronic response. It is shown that for both ion beams, the agreement between theory and experiment is quite remarkable.     

Modernized setup for studying the interaction of ions with energies to 40 keV with the surface

A modernized setup for studying the ion-surface interaction is briefly described. The main ion channel implemented on the “Large MEPhI mass monochromator” with an ion energy range of 1–40 keV makes it possible to obtain ion beams with (EM/Z) ≤ 4000 keV × a.m.u. Operation with intermediate-energy hydrogen ions allows obtaining information on the thickness of layers of atoms with masses differing from substrate atoms, by analyzing energy spectra of protons scattered from two- or three-layer targets. The use of new digital power units and relevant control programs also allows automation of the ion beam control and makes it possible to perform ion-beam experiments using preliminarily developed irradiation programs.     

Low-energy antimony implantation in silicon

Abstract

Antimony is known to be a donor in silicon, Low-energy implantations of Sb in Si produce very shallow profiles which have many device applications. Gibbons et al. ¹ calulated the projected ranges of Sb ion-implanted in Si, using the LSS (Lindhard, Scharff, and Schiott) method. Oetzmann et al. ² measured projected ranges and range straggling for several heavy ions in Si, Al, and Ge, using high-resolution backscattering; in the energy region of interest to us, e = 10^?2 to 10^?1, their results were about 30% higher than those reported by Gibbons et al. In the study reported here, we implanted 5 × 10¹⁴ Sb/cm² in Si at 5–60 keV, measured the resulting depth distribution by secondary ion mass spectrometry, and checked the measurements by backscattering. Our results showed the experimental projected ranges to be about halfway between those reported in the earlier studies. The discrepancies between theoretical calculations and experimental results are due not to the electronic stopping cross section, which is negligible in the range of interest here, but to the nuclear stopping power. Using a modified nuclear scattering potential given by Wilson et al.,³ we calculated the projected range distribution according to the method described by Winterbon.⁴ Our results are in very good agreement with the experimental measurements.     

Electron yield per ion charge-state correction for an ion collector with unsuppressed secondary electron emission

The electron yield per ion charge-state γ/q was measured for emission of electrons from clean polycrystalline gold induced due to impact of Ta ^q+ (11≤q≤41) ions with kinetic energy per chargeE _i/q from 15 keV/q to 150 keV/q. The dependence of γ on angle of incidence was analyzed with use of relation γ(ϑ)=γ₀ cos^−f ϑ. The fitting of experimental data gives a range of γ₀/q from 1 to 1.75 for Ta¹³⁺ and from 1.5 to 1.73 for Ta³⁹⁺. The dependence of γ₀/q onq andE _i is discussed with respect to measurement of ion currents emitted from laser-produced plasmas with an ion collector with unsuppressed secondary electron emission. This work was supported by the Division of Chemical Sciences, Office of Basic Energy Sciences, Office of Energy Research, U.S. Department of Energy, and by grant A1010819 from the Grant Agency of the Academy of Sciences of the Czech Republic.     

Annealing of radiation damage in graphite

Abstract

The electronic stopping of heavy ions with 7 ≤ Z, ≤ 54 in low-index directions of thin gold single crystals is measured in the energy range 200 keV ≤ E ≤ 1100 keV. Large oscillations in electronic stopping power are observed for constant ion velocity. The stopping powers of different low-index directions are compared.     

Radiation chemical yields for loss of ether and carbonate ester bonds in PADC films exposed to proton and heavy ion beams

Chemical modification along ion tracks in PADC films has been studied by means of FT-IR spectrometry, which was exposed to proton and heavy ions of He, C, Ne, Ar, Fe, Kr and Xe with energies around the Bragg peaks. This study covers a wide region of the stopping power ranging from 10 to 10,000 keV/μm. Removal cross sections for the loss of ether and carbonate ester bonds are assessed for each ion, as a function of the stopping power. Chemical damage parameters like the damage density, the effective track core radius and the radiation chemical yields, G values (scissions/100 eV), for each bond are also derived. We have found anomalous dependence of these parameters on the stopping power. The G value for the loss of carbonate ester bond decreased from 20 for proton down to 5 for C and Ne ions, and then increased with atomic number of heavy ions up to 8 for Xe ion. Radial dose distribution for each ion has been also calculated. Results are discussed from the viewpoint of polymeric structure of PADC that consists of two parts with different radio-sensitivities.     

25 MeV/u Kr辐照下PET薄膜的损伤机制研究

通过25 MeV/u 86 Kr离子辐照叠层结晶聚对苯二甲酸乙二醇酯膜（PET）, 在不同的电子能损（3.40-7.25 keV/nm）和离子注量(5×1011----3×1012 ions/cm2)辐照条件下, 对Kr离子在PET中引起的辐照损伤效应进行了研究。借助傅里叶变换红外光谱分析,通过对样品的红外吸收峰进行扣除基底后的Lorentz拟合,分析了与主要官能团对应的吸收峰强度的变化趋势, 研究了化学结构与组分在重离子辐照下的变化规律; 利用X射线衍射光谱仪测量, 研究了Kr离子在PET潜径迹中引起的非晶化过程,并通过对吸光度和非晶化强度随离子注量的指数衰减规律的分析, 获得了不同电子能损离子辐照PET时主要官能团的损伤截面和非晶化截面及对应的潜径迹半径。 At room temperature, polyethylene terephthalate(PET) foil stacks were irradiated by 25 MeV/u Kr ions in the electronic stopping power range(3.3--7.66 keV/nm) and the fluence range from 5×1011 to 3×1012 ions/cm2. The behaviour of the main function groups with fluence and electronic stopping power were studied by using Fourier transform infrared(FTIR) spectroscopy, the degradation of the function group was investigated with the Lorentz fitting subtracted baseline. The amorphous processes in the latent tracks of PET were studied by X ray diffraction(XRD) measurements. The Kr ion induced degradation cross section and amorphisation cross sections(radii) for different electronic energy loss were acquired from the experimental data(FT IR and XRD) by exponential decay function respectively.      

Stopping power of low-energy deuterons in 3He gas

The stopping power of atomic and molecular deuterons in ³He gas was measured over the range E _d = 10 to 100 keV using the ³He pressure dependence of the ³He(d,p) ⁴He reaction yield. At energies above 30 keV, the observed stopping power values are in good agreement with a standard compilation. However, near 18 keV the experimental values drop by a factor 50 below the extrapolated values of the compilation. In a simple model, the behavior is due to the minimum 1s↦2s electron excitation of the He target atoms (= 19.8 eV, corresponding to E _d = 18.2 keV), i.e. it is a quantum effect, by which the atoms become nearly transparent for the ions.     

Reliability of stopping power tables and codes for heavy ions (8 ≤ Z ≤ 92) in gases

A comparative study of various stopping power tables and codes for heavy ions in gases has been made through comparison of computed values and the corresponding experimental data. Ten gaseous media: five monatomic rare gases (He to Xe), two diatomic gases (H₂, N₂) and three polyatomic gaseous compounds (CH₄, CF₄ and CO₂) have been chosen to study the stopping power investigations of heavy ions (8 ≤ Z ≤ 92) having energy ranges of ∼0.10–10.00 MeV/n and ∼20.00–57.00 MeV/n. We compare the experimental data of stopping power to values calculated using various tables and computer codes by ICRU-73, Ziegler et al (SRIM2003.26), Grande and Schiwietz (CasP3.1), Paul and Schinner (MSTAR3.12), and Bazin and Tarasov (LISE ++:2-ATIMA1.2). On the basis of statistical analysis, we estimate the reliability of these tables and codes. It has been observed that the MSTAR3.12 code shows the best agreement with the experimental data for projectile ions (8 ≤ Z ≤ 18) in the entire energy range. The SRIM2003.26 code provides good results except for some heavy projectiles (Xe, Pb and U). The values tabulated by CasP3.1 code underestimate especially at low energy region. No significant trend is observed in case of LISE++:2-ATIMA1.2 code and ICRU-73 report.     

Secondary electron emission from solid HD and a solid H2-D2 mixture

Secondary electron emission from solid HD and a solid 0.6 H₂ + 0.4 D₂ mixture has been studied for electron and hydrogen ion bombardment at primary energies from 0.5 to 3 keV and 2 to 10 keV/amu, respectively. The yield for solid HD is well explained by a simple stoichiometric model of the low-energy stopping power for the internal secondaries. The secondary electron yield from the mixture is somewhat larger than the expected value, but lies between the values for pure solid H₂ and D₂. The secondary electron emission coefficient for solid tritium may be determined from a linear extrapolation of the present data.     

Energy loss straggling measurements for helium ions in Mylar and polypropylene polymeric foils

In the present contribution, we report results on energy straggling of He ions penetrating Mylar and polypropylene thin polymeric foils. The measurements were performed in the 900–3000 keV incident particle energy range by using the indirect transmission technique developed previously. The experimental straggling data are corrected to consider the roughness effects due to target thickness inhomogeneity. As expected, the roughness contribution to straggling is more important for helium than for proton ions and decreases as the ion energy increases. At low velocities, (<500 keV/amu), the variation of the experimental energy straggling results differs strongly from predictions based on Bohr’s formalism, and with increasing energies, the experimental results approach gradually the Bohr values.     

Ion implantation induced by Cu ablation at high laser fluence

High energy laser plasma-produced Cu ions have been implanted in silicon substrates placed at different distances and angles with respect to the normal to the surface of the ablated target. The implanted samples have been produced using the iodine high power Prague Asterix Laser System (PALS) using 438 nm wavelength irradiating in vacuum a Cu target. The high laser pulse energy (up to 230 J) and the short pulse duration (400 ps) produced a non-equilibrium plasma expanding mainly along the normal to the Cu target surface. Time-of-flight (TOF) technique was employed, through an electrostatic ion energy analyzer (IEA) placed along the target normal, in order to measure the ion energy, the ion charge state, the energy distribution and the charge state distribution. Ions had a Boltzmann energy distributions with an energy increasing with the charge state. At a laser fluence of the order of 6 × 10⁶ J/cm², the maximum ion energy was about 600 keV and the maximum charge state was about 27+.In order to investigate the implantation processes, Cu depth profiles have been performed with Rutherford backscattering spectrometry (RBS) of 1.5 MeV helium ions, Auger electron spectroscopy (AES) with 3 keV electron beam and 1 keV Ar sputtering ions in combination with scanning electron microscopy (SEM). Surface analysis results indicate that Cu ions are implanted within the first surface layers and that the ion penetration ranges are in agreement with the ion energy measured with IEA analysis.     

Excitation of Autoionization States and Electronic Stopping Powers at Collisions of Slow Ions with a Solid

It has been shown that the excitation of autoionization states at collisions of keV ions with a solid is decisive for inelastic energy loss and, correspondingly, the electronic stopping power dE/dx. It has been proposed to estimate the electronic stopping power dE/dx using the relation of cross sections for the excitation of autoionization states to ionization cross sections. When ionization cross sections are unknown, scaling is used to calculate ionization cross sections at the excitation of the L and M shells. A threshold dependence of the electronic stopping power dE/dx on the energy of bombarding ions has been predicted.     

Sputtering of AlxGa1−x As semiconductor targets by Ar+ ions with energies of 2–14 keV

Investigations of the sputtering of Al_xGa_1−x As semiconductor solid solutions by Ar⁺ ions with energies of 2–14 keV are performed. The dependence of the sputtering yield on the energy and angle of incidence of the ions are determined and the character of the surface relief formed during the sputtering is investigated. A comparison with theory shows that the best agreement between theory and experiment is achieved when the Haff-Switkowski formula is used together with Yudin’s stopping cross section. It is shown that the surface binding energies obtained differ from the atomization energies by an amount approximately equal to the amorphization energy. Zh. Tekh. Fiz. 67, 113–117 (June 1997)     

高电荷态离子207Pb36+与金属Nb表面作用产生的二次离子产额

本文报道了利用兰州重离子加速器国家实验室的ECR离子源引出的高电荷态离子207Pb36 入射到金属Nb表面产生的二次离子的实验测量结果.实验发现,二次离子产额Y随入射初动能Ek的增加有先增加后减小的关系,在初动能为576 keV时二次离子产额达到最大.通过对实验点做高斯拟合发现,曲线峰值对应的入射初动能为602 keV.分析表明,这是势能沉积作用与线性级联碰撞过程协同作用的结果.高电荷态离子本身携带的高势能沉积在靶表面引起势能溅射,促进了二次离子的发射;而主导二次离子溅射的过程是动能溅射,它与靶表面的动量沉积(核能损)过程密切相关.     

强扰动区C~(q+)离子与He原子碰撞中有效电荷研究

本文利用经典过垒电离模型(Class Over Barrier Ionization)处理100-400ke V/amu强扰动区(q/v1)的不同价态非全裸离子Cq+(q=1-4)与全裸离子H1+,He2+,Li3+与He原子碰撞过程.发现相同价态下,全裸离子的双单电离截面比R21明显低于非全裸离子,原因在于两者的电子结构明显不同.非全裸离子的外壳层电子在碰撞过程中会有一定几率过垒,这在以往的研究中并未考虑.利用模型计算结果与实验数据的比对,估计入射离子第二有效电荷,最终确定入射离子在电离过程中的第一和第二有效电荷.