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钚因放射性衰变而出现老化效应.钚中点缺陷的性质和行为是理解钚老化效应的一个基础和前提.运用分子动力学模拟技术,计算了金属钚中点缺陷和点缺陷团簇的形成能和结合能.其中钚-钚、钚-氦和氦-氦相互作用势分别采用嵌入原子多体势、Morse对势和Lennard-Jones对势.计算结果表明,单个自间隙原子易以〈100〉哑铃状形态存在;间隙氦原子在理想晶格的八面体间隙位置相对较为稳定;氦原子与空位的结合能较大,在钚的自辐照过程中两者易于结合并形成氦-空位团簇;氦-空位团簇的形成能随氦原子数的增加而增大,当氦与空位的数 相似文献
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碳化硅(SiC)由于性能优异,已广泛应用于核技术领域.在辐照环境下,载能入射粒子可使材料中的原子偏离晶体格点位置,进而产生过饱和的空位、间隙原子、错位原子等点缺陷,这些缺陷将改变材料的热物性能,劣化材料的服役性能.因此,本文利用平衡分子动力学方法(Green-Kubo方法)采用Tersoff型势函数研究了点缺陷对立方碳化硅(β-SiC或3C-SiC)热传导性能的影响规律.研究过程中考虑的点缺陷包括:Si间隙原子(SiⅠ)、Si空位(SiⅤ)、Si错位原子(SiC)、C间隙原子(CⅠ)、C空位(CⅤ)和C错位原子(CSi).研究结果表明,热导率(λ)随点缺陷浓度(c)的增加而减小.在研究的点缺陷浓度范围(点缺陷与格点的比例范围为0.2%—1.6%),额外热阻率(ΔR-Rdefect-Rperfect,R=1/λ,Rdefect为含缺陷材料的热阻率,Rperfec... 相似文献
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采用分子动力学方法模拟了氦在金属钨中的扩散聚集行为. 首先,建立了氦与钨原子间相互作用势,短程部分采用ZBL势形式,长程部分采用从头算法数据,实现了两者之间的平滑连接. 通过计算氦在钨中不同间隙位的形成能发现,单个氦原子更易存在于金属钨中的四面体间隙位,这与最新的研究成果是一致的. 在400-1200 K的温度范围内,考察了氦原子在金属钨中的扩散行为,获得了扩散迁移能,其值介于实验值和从头算法结果之间. 最后,研究了氦的聚集行为,从能量的角度考察了氦团簇形成初期的生长机理. 研究发现,在氦团簇形成初期,氦团簇对氦的结合能随着氦团簇的生长有逐渐增大的趋势,说明氦团簇吸收氦的能力逐渐增强.
关键词:
氦扩散
氦团簇
辐照损伤
分子动力学模拟 相似文献
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The nucleation behavior of He bubbles in single-crystal (sc) and nano-grain body-centered-cubic (bcc) Mo is simulated using molecular dynamics (MD) simulations, focusing on the effects of the grain boundary (GB) structure. In sc Mo, the nucleation behavior of He bubbles depends on irradiation conditions. He bubbles nucleate by either clustering of He atoms with pre-existing vacancies or self-interstitial-atom (SIA) punching without initial vacancies. In nano-grain Mo, strong precipitation of He at the GBs is observed, and the density, size and spatial distribution of He bubbles vary with the GB structure. The corresponding He bubble density is higher in nano-grain Mo than that in sc Mo and the average bubble size is smaller. In the GB plane, He bubbles distribute along the dislocation cores for GBs consisting of GB dislocations and randomly for those without distinguishable dislocation structures. The simulation results in nano-grain Mo are in agreement with previous experiments in metal nano-layers, and they are further explained by the effect of excess volume associated with the GBs. 相似文献
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Molecular dynamics simulations of the displacement cascades in Fe-10%Cr systems are used to simulate the primary knocked-on atom events of the irradiation damage at temperatures 300,600,and 750 K with primary knockedon atom energies between 1 and 15 keV.The results indicate that the vacancies produced by the cascade are all in the central region of the displacement cascade.During the cascade,all recoil Fe and Cr atoms combine with each other to form Fe-Cr or Fe-Fe interstitial dumbbells as well as interstitial clusters.The number and the size of interstitial clusters increase with the energy of the primary knocked-on atom and the temperature.A few large clusters consist of a large number of Fe interstitials with a few Cr atoms,the rest are Fe-Cr clusters with small and medium sizes.The interstitial dumbbells of Fe-Fe and Fe-Cr are in the 111 and 110 series directions,respectively. 相似文献
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Molecular dynamics simulations of the displacement cascades in Fe-10%Cr systems are used to simulate the primary knocked-on atom events of the irradiation damage at temperatures 300, 600, and 750 K with primary knocked-on atom energies between 1 and 15 keV. The results indicate that the vacancies produced by the cascade are all in the central region of the displacement cascade. During the cascade, all recoil Fe and Cr atoms combine with each other to form Fe-Cr or Fe-Fe interstitial dumbbells as well as interstitial clusters. The number and the size of interstitial clusters increase with the energy of the primary knocked-on atom and the temperature. A few large clusters consist of a large number of Fe interstitials with a few Cr atoms, the rest are Fe-Cr clusters with small and medium sizes. The interstitial dumbbells of Fe-Fe and Fe-Cr are in the lan111ran and lan110ran series directions, respectively. 相似文献
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Lee A. Collins Joel D. Kress Scott R. Bickham Thomas J. Lenosky Norm J. Troullier 《高压研究》2013,33(5-6):313-329
Abstract Molecular dynamics simulations have been performed for highly compressed fluid hydrogen in the density and temperature regime of recent shock-compression experiments. Both density functional and tight-binding electronic structure techniques have been used to describe interatomic forces. Two tight-binding models of hydrogen have been developed with a single s-type orbital on each atom that reproduce properties of the dimer, of various crystalline structures, and of the fluid. The simulations indicate that the rapid rise in the electrical conductivity observed in the gas-gun experiments depends critically on the dissociated atoms (monomers). We find that the internal structure of warm, dense hydrogen has a pronounced time-dependent nature with the continual dissociation of molecules (dimers) and association of atoms (monomers). Finally, Hugoniots derived from the equations-of-state of these models do not exhibit the large compressions predicted by the recent laser experiments. 相似文献
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纳米团簇熔化过程的分子动力学模拟 总被引:1,自引:2,他引:1
本文采用分子动力学结合嵌入原子多体势,模拟了不同半径的Ni纳米团簇的升温熔化过程,研究团簇尺寸对熔点和表面能的影响.模拟结果表明:团簇的熔点显著低于体材料的熔点.团簇熔化的过程首先是在团簇的表面出现预熔,然后向团簇内部扩展,直到整个团簇完全熔为液态.在模拟的纳米尺度范围内,团簇的熔点与团簇尺寸基本成线性关系.团簇的表面能随着团簇尺寸的增大而减小,而且表面能均高于体材料的表面能. 相似文献
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One-dimensional Lennard-Jones systems are investigated by molecular dynamics simulations. The full Lennard-Jones potential is compared to the repulsive Lennard-Jones potential. It is found that the pair correlation function and the normalized velocity autocorrelation function agree at high densities and high temperature. However, the diffusion coefficient indicates that the attractive potential introduces additional correlations into particle dynamics which are not reflected in the statics. These results are in agreement with three-dimensional studies. 相似文献
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运用分子动力学方法模拟了常温下金属钛中氦团簇的生长过程.从能量的角度考察了氦团簇的生长机理.研究发现,随着氦团簇的生长,在氦团簇周围逐渐形成位错环缺陷,氦团簇与氦原子的结合能有逐渐下降的趋势,当氦团簇生长到一定尺寸时会通过发射周围缺陷以使得结合能上升,从而增强了进一步吸收氦原子的能力.模拟还发现,随着氦团簇的继续生长,氦团簇的形状由原来的不规则结构逐渐变成了较为规则的棱柱形结构,在随后的生长过程中其生长仅在(001)平面进行,沿[001]轴的厚度几乎不变.
关键词:
氦团簇
缺陷发射
分子动力学模拟 相似文献
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A three-dimensional molecular dynamics simulation is carried out to study the evolution of grains and stresses during the deposition of atoms on the (100) plane of a fcc regular crystal, using the cubic system with x–y periodic boundary conditions. At the bottom an atomic surface and at the top a reflecting wall are assumed. Atoms in the system interact via the Lennard–Jones potential. During simulation the films grow according to the Volmer–Weber mode and exhibit specific shape of the stress curves. When the film becomes continuous, the stress during the growth possesses a maximum value, but later new grain boundaries are formed. Individual atoms in the grain boundaries generate compressive stress in the films. 相似文献
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利用分子动力学模拟系统研究了低能Pt38,Pt141和Pt266原子团簇与Pt(001)表面的相互作用过程,详细分析了初始原子平均动能为0.1,1.0和10eV的原子团簇的沉积演化过程及其对基体表面形貌的影响.研究表明,初始原子平均动能是描述低能原子团簇的重要参量.当团簇的平均原子动能较低时,团簇对基体表层原子点阵损伤较小,基本属于沉积团簇;随着入射团簇的原子平均动能的增加,团簇对表层原子点阵结构的破坏能力增强,当团簇的原子平均动能增加到10eV时,团簇已经显现出注入特征.低能原子团簇对基体表面形貌的影响
关键词:
分子动力学模拟
低能原子团簇
载能沉积 相似文献
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使用分子动力学模拟方法研究了不同能量(0.3—10 eV)的Cl原子对表面温度为300 K的Si(100)表面的刻蚀过程.模拟中采用了Tersoff-Brenner势能函数来描述Cl-Si体系的相互作用.模拟结果显示,随着入射Cl原子在表面的吸附达到饱和,Si表面形成一层富Cl反应层.这和实验结果是一致的.反应层厚度随入射能量增加而增加.反应层中主要化合物类型为SiCl,且主要分布于反应层底部.模拟结果发现随初始入射能量的增加,Si的刻蚀率增大.在入射能量为0.3,1和5 eV时,主要的Si刻蚀产物为Si
关键词:
分子动力学
Cl刻蚀Si
分子动力学模拟
微电子机械系统 相似文献
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Formation of reverse micelles in the water–hexane–AOT system has been investigated by molecular dynamics simulations. In order to optimize calculation strategy, the starting spatial disposition of components was assumed to be random. Such an approach was found to provide a lower dependence of final results on initial conditions as compared to the calculations using pre-assembled reverse micelles as a starting geometry. The calculated structural parameters of reverse micelles (such as their shape, size, and distribution of components) were found to agree with the available experimental data. 相似文献
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采用基于壳模型的分子动力学模拟方法, 研究了存在外延压应变时BaTiO3铁电体的辐射位移效应, 以O原子作为初冲原子(primary knock-on atom, PKA), 能量为1 keV, 方向为[001], 分别计算了外延压应变为0, 0.4%, 0.8%, 1.2%, 1.6%, 2.0%时体系的缺陷数量、分布, 以及辐射前后的极化强度, 比较了压应变为2%以及无应变下损伤区域、缺陷离位距离和反向外电场下PKA的迁移距离. 结果表明, 随外延压应变增加体系极化近似线性增加, 辐射后极化降低幅度降低、缺陷产生的数量有所减小, 2% 压应变存在时缺陷原子的离位距离、PKA在反向外电场作用下的迁移距离和损伤区域都小于无应变的情况, 说明外延压应变的存在对辐射造成的晶格损伤具有抑制作用, 对辐射损伤具有改善作用, 可以通过引入外延压应变来调控BaTiO3的辐射损伤.
关键词:
应变
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辐射损伤
分子动力学模拟 相似文献
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Molecular dynamics is employed to study the melting of bulk gold and gold nanoparticles. PCFF, Sutton-Chen and COMPASS force fields are adopted to study the melting point of bulk gold and we find out that the Sutton-Chen force field is the most accurate model in predicting the melting point of bulk gold. Consequently, the Sutton-Chen force field is applied to study the melting points of spherical gold nanoparticles with different diameters. Variations of diffusion coefficient, potential energy and translational order parameter with temperature are analyzed. The simulated melting points of gold nanoparticles are between 615~1115 K, which are much lower than that of bulk gold (1336 K). As the diameter of gold nanoparticle drops, the melting point also descends. The melting mechanism is also analyzed for gold nanoparticles. 相似文献
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We report on the results of computer simulation of point defect production near voids in crystalline Cu at primary knock-on atom (PKA) kinetic energies ranging from 5 to 1000?eV. The PKA energy dependence of numbers of created defects are revealed. The threshold energy for a stable vacancy formation is found to be much smaller than that for an interstitial atom, which results in a biased formation of vacancies in the void proximity in the whole investigated range of PKA energies. Dissolution of small voids by subthreshold irradiation is simulated. The impact of considered radiation effects on kinetics of radiation damage is discussed. 相似文献
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用杂化密度泛函(B3LYP)方法,Pu原子采用相对论有效原子实势(RECP),O原子采用全电子6-311g(d)基组优化了PuO,PuO2,Pu2O3的分子结构,得到了相应的平衡几何构型,并计算了红外振动频率(IR)、Raman光谱.结果表明:PuO,PuO2分子基态几何构型和振动频率与实验值相符.对Pu2O3分子可能的构型和多重性进行结构优化,发现Pu2O3分子基态为11B2的C2v构型,给出了Pu2O3分子基态结构的红外和拉曼光谱数据、力常数等系列数据,并对振动频率的峰值进行了指认.通过自然键轨道(NBO)分析,发现由钚到氧的电荷转移.相对于PuO和PuO2分子,在Pu2O3中形成较弱的Pu—O键.分析自旋布居,发现在这些分子中,自旋磁动量大都由Pu原子的5f电子贡献,而氧原子的2p轨道往往贡献反平行的自旋. 相似文献