Large Positive and Negative Lateral Displacements from Total Internal Reflection Configuration with a Weakly Absorbing Dielectric Film

It is theoretically shown that the simultaneously large positive and negative lateral displacements will appear when the resonant condition is satisfied for a TE-polarized light beam reflected from the total internal reflection configuration with a weakly absorbing dielectric film. Appearance of the enhanced negative lateral displacement is relative to the incidence angle, absorption of the thin film and its thickness. If we select an appropriate weakly absorbing dielectric film and its thickness, the simultaneously enhanced positive and negative lateral displacements will appear at different resonant angles. These phenomena may lead to convenient measurements and interesting applications in optical devices.     

High on/off current ratio in ballistic CNTFETs based on tuning the gate insulator parameters for different ambient temperatures

A theoretical study is presented on the on/off current ratio limits for a ballistic coaxially-gated carbon nanotube field effect transistor (CNTFET) with highly doped source/drain regions. Based on changes in gate insulator dielectric constant and thickness, the current ratio has been estimated at different ambient temperatures. Decreasing the gate insulator thickness after a certain value around 3 nm causes the current ratio to degrade drastically. Although the higher dielectric constant values have a fair effect on current ratio, this effect could be suppressed when the device with a low gate insulator thickness works at a low ambient temperature. The simulation results also show that the temperature drastically degrades the current ratio value; whereas in a certain range of ambient temperature, tuning the values of gate insulator thickness and dielectric constant could be very helpful. In this way, the optimum values of gate insulator thickness and dielectric constant are identified to offer the highest on/off current ratio of the device.     

Localized Surface Plasmon Resonance of Cu@Cu2O core-shell nanoparticles: Absorption, Scattering and Luminescence

By co-deposition via RF-Sputtering and RF-PECVD methods and using Cu target and acetylene gas, we prepared Cu@Cu₂O core-shell nanoparticles on the a-C:H thin film at room temperature. Mie absorption of Cu cores, scattering from Cu₂O shell and luminescence that rises from carrier transfer in Cu@Cu₂O interface were employed to fit the whole range of visible extinction spectrum of these core-shells. From simulation it was found that scattering and luminescence have an important effect on the energy, width and shape of LSPR absorption peak. Shift of LSPR peak is more affected by the dielectric coefficient of shell than Cu core size particularly for Cu core diameter above 4 nm. Also, the LSPR absorption peak is damped by decreasing Cu core size and dielectric coefficient of shell. The energy of LSPR absorption peak is independent of shell thickness and host dielectric coefficient. The LSPR peak is damped by increasing shell thickness and host dielectric coefficient too. The scattering contribution in extinction spectra was affected more by shell size than dielectric coefficient. These points are important for detection techniques based on LSPR peak.     

Modeling and design of an optimized patterned electrode liquid crystal microlens array with dielectric slab

To eliminate the occurrence of disclination lines in the hole patterned electrode liquid crystal microlens array (LC MLA), inserting an ultrathin dielectric slab was proved to be an effective method. The thickness of the dielectric slab played an important role in effecting the optical performance of the liquid crystal microlens array device, including the dynamic focal range, focus diameter and symmetry of phase profile. In this paper, we studied the effect of dielectric slab thickness on the optical performance of the liquid crystal microlens array by numerical simulation. It is indicated that the optical performance of the device could be improved by reducing the dielectric slab thickness, assuming that the dielectric slab thickness was larger than the threshold thickness. The dependence of the threshold thickness on some key parameters was investigated and the associated effect on the optical performance by changing these key parameters was also studied. In the end, the approaches to enhance the optical performance, namely the dynamic focal range of the liquid crystal microlens array was proposed and proved to be in effect by numerical simulation results.     

Radiation properties of microstrip patch antenna covered with an anisotropic dielectric layer and a plasma sheath

By using SO-FDTD method, radiation properties of microstrip patch antenna covered with an anisotropic dielectric layer and a plasma layer are investigated. Simulation results show that the resonant frequency of antenna covered with a plasma layer varies with different plasma parameters. It has been indicated that the frequency offset of antenna is as high as 120 MHz when plasma frequency changes from 1 GHz to 8 GHz. The effect on antenna covered with an anisotropic dielectric layer is analyzed, while altering the dielectric constant or thickness of dielectric layer. Finally, the peak gain of antenna in complex plasma environment is presented in detail.     

金纳米球壳表面等离激元共振波长调谐特性研究

理论研究了金纳米球壳的几何结构参数, 及物理参量对局 域表面等离激元共振波长调谐特性的影响. 结果表明, 随着壳层厚度的增大, 球壳消光共振峰先蓝移后红移, 高阶峰转向时对应的壳层厚度比低阶峰大, 且该厚度与球壳内径的比值随内径尺寸的增大而减小, 随内核材料或外界环境介电常数的增大而增大, 散射共振峰也有类似的移动规律. 利用电子杂化效应和相位延迟效应对该现象进行了理论解释.     

Determination of the reduction depth of tungsten oxide thin films under the effect of proton irradiation

This work is devoted to experimental determination of the limiting reduction depth of tungsten oxide to metal by the measurement of volumetric variations in a thin film of WO₃ under the effect of proton irradiation with an energy of 1.5 keV. The method of radiation-induced reduction of tungsten from WO₃ can be used for preparation of conducting structures in a dielectric matrix and obtaining an inorganic mask for carrying out different ion-beam processes. It is shown experimentally that the effect of a proton beam with an energy of 1.5 keV provides complete reduction of a tungsten oxide layer up to 138 nm thick. The experimental ratio of the thickness of the reduced layer to the thickness of the starting oxide film was 0.31. It is shown that the limiting reduction depth of tungsten oxide is determined by the path of protons in tungsten.     

Multiple optical Tamm states at a metal-dielectric mirror interface

The reflectivity map is theoretically investigated by applying the transfer matrix method in a metal-dielectric mirror structure at normal incidence. The existence of multiple optical Tamm states (OTSs) is demonstrated in this structure. It is found that an OTS is periodic resonance with the variation of the top-layer thickness of the dielectric mirror for a given wavelength. The energy for the corresponding OTS mainly depends on the thickness of the top layer. The appropriate thicknesses of metal film are proposed for the convenient observation of OTSs. This work may be useful in designing a new type of multichannel filter in optical communication systems.     

Electrical domain morphologies in compositionally graded ferroelectric films

We present a nonlinear thermodynamic formalism coupled with an electrostatic analysis of uniaxial n-layered compositionally graded heteroepitaxial ferroelectric films and extend this formalism to continuously graded ferroelectric films. We show that the domain morphology and its subsequent evolution in the presence of an electric field are determined by the spontaneous polarisation of the film induced through the compositional grading. The results for compositionally graded epitaxial (001) (Ba,Sr)TiO(3) and (001) Pb(Zr,Ti)O(3) films on (001)SrTiO(3) demonstrate that, while the domain morphologies in these two films are different in appearance, the dielectric displacement and the dielectric permittivity of such graded ferroelectric films exhibit a strong nonlinear behaviour which results in a high dielectric tunability. These findings indicate that it is possible to design specific domain structures that will yield desirable dielectric properties by controlling the strength of the compositional grading in the films.     

Effect of dielectric layer on ferroelectric responses of P(VDF-TrFE) thin films

The dielectric layer in the sandwich structural device plays a very important role in determining the electrical properties of the ferroelectric film. In this paper, we investigate the effect of the dielectric layers with different thicknesses on switching performance of ferroelectric P(VDF-TrFE) thin films. The hysteresis loops become slanting with increasing thickness of the dielectric layer. A negative slope of the ‘real’ hysteresis loop is apparently observed which demonstrates negative capacitance effect caused by the dielectric layer. This behavior is simulated qualitatively by the Weiss mean field model considering an interfacial dielectric layer in series with a ferroelectric layer. The agreement between experiments and simulations supports that negative capacitance results from the positive feedback among electric dipoles. Furthermore, the switching time of the ferroelectric film increases with the increase of dielectric layer thickness. This study shows that the ferroelectric sandwich structure provides great potential towards low power negative capacitance devices.     

Optical defect modes at an active defect layer in photonic liquid crystals

An analytic approach to the theory of the optical defect modes in photonic liquid crystals in the case of an active defect layer is developed. The analytic study is facilitated by the choice of the problem parameters related to the dielectric properties of the studied structures. The chosen models allow eliminating polarization mixing at the external surfaces of the studied structures. The dispersion equations determining the relation of the defect mode (DM) frequency to the dielectric characteristics of an isotropic, birefringent and absorbing (amplifying) defect layer and its thickness are obtained. Analytic expressions for the transmission and reflection coefficients of the defect mode structure (DMS) (photonic liquid crystal-active defect layer-photonic liquid crystal) are presented and analyzed. The effect of anomalously strong light absorption at the defect mode frequency for an absorbing defect layer is discussed. It is shown that in a distributed feed-back lasing at the DMS with an amplifying defect layer, adjusting the lasing frequency to the DM frequency results in a significant decrease in the lasing threshold and the threshold gain decreases as the defect layer thickness increases. It is found that, generally speaking, the layer birefringence and dielectric jumps at the interfaces of the defect layer and photonic liquid crystal reduce the DM lifetime in comparison with the DMS with an isotropic defect layer without dielectric jumps at the interfaces. Correspondingly, generally speaking, the effect of anomalously strong light absorption at the defect mode frequency and the decrease in the lasing threshold are not so pronounced as in the case of the DMS with an isotropic defect layer without dielectric jumps at the interfaces. The case of a DMS with a low defect layer birefringence and sufficiently large dielectric jumps are studied in detail. The options of effectively influencing the DM parameters by changing the defect layer dielectric properties, and the birefringence in particular, are discussed.     

Design of near-unity transmittance dielectric/Ag/ITO electrodes for GaN-based light-emitting diodes

We designed a near-unity transmittance dielectric/Ag/ITO electrode for high-efficiency GaN-based light-emitting diodes by using the scattering matrix method. The transmittance of an ultrathin metal layer, sandwiched between a dielectric layer and an ITO layer, was investigated as a function of the thickness and the optical constant of each constituent layer. Three different metals (Ag, Au, and Al) were examined as the metal layer. The analytical simulation indicated that the transmittance of a dielectric/metal/ITO multilayer film is maximized with an approximately 10-nm-thick Ag layer. Additionally, the transmittance also tends to increase as the refractive index of the upper dielectric layer increases. By tailoring the thickness of the dielectric layer and the ITO layer, the dielectric/Ag/ITO structure yielded a transmittance of 0.97, which surpasses the maximum transmittance (0.91) of a single ITO film. Furthermore, this extraordinary transmittance was present for other visible wavelengths of light, including violet and green colors. A complex phasor diagram model confirmed that the transmittance of the dielectric/metal/ITO multilayer film is influenced by the interference of reflected partial waves. These numerical findings underpin a rational design principle for metal-based multilayer films that are utilized as transparent electrodes for the development of efficient light-emitting diodes and solar cell devices.     

Frequency selective surface with a flat topped passband

Two frequency selective surface (FSS) configurations with flat topped passband are presented in this paper.One configuration is single layer FSS with λ/4 thickness dielectric loaded on both sides, and the other is double layers FSS. Based on the modal matching method, the frequency response properties including angle effect and polarization effect of both FSS configurations are analyzed, and the plots of the frequency versus transmission coefficient are obtained for different incident angles and polarizations. It is shown that the structure with the single layer FSS embedded centrally in the λ/2 thickness dielectric has a wider flat top bandwidth of 6.8 GHz than that of the double layers FSS of 3 GHz. In addition, the fabrication of single layer is relatively easier than the double layers FSS.     

基于表面等离子激元的超薄金属减色滤波器的研究

基于表面等离子激元的新型超薄金属减色滤波器具有可靠、易制备、高透射率等诸多优点.本文对银、铜、铝、镍等不同金属材料的超薄一维光栅减色滤波器进行了系统研究.仿真获得了透射光谱,理论计算了对应透射光谱的色品坐标,并推导出了银、铜、铝三种材料透射率最低点波长与膜厚、周期关系的经验公式.仿真研究发现:除了镍的选波性较差外,银、铜、铝均表现出较好的、不同的滤波特性,其中银的滤波范围较广,而铜、铝则分别在长、短波段表现出较好的滤波性能.为了验证仿真结果,利用磁控溅射技术和聚焦离子束刻蚀技术进行了三种材料的一维光栅减色滤波器的制备实验,并在显微镜下观察滤波器的颜色效应,结果与理论仿真相符合.研究结果表明:不同金属材料在相同微结构下的颜色效应存在较大差异,可根据实际滤波需要,选择材料和微结构参数来获得最佳性价比的滤波器.     

Calculated Optical Properties of Dielectric Shell Coated Gold Nanorods

Optical absorption spectra of dielectric shell coated gold nanorods are simulated using the discrete dipole ap- proximation method. The influence of the aspect ratio, shell thickness, dielectric constant of the shell, and surrounding medium on the longitudinal resonance mode is investigated. It is found that the coated dielectric shell does not affect the trend in the dependence of resonance position on the aspect ratio, while it broadens the resonant line width and reduces the sensitivity of plasmon resonance in response to changes of the surrounding medium. F~arthermore, the difference of dielectric constants between the shell and surrounding medium plays an important role in determining the resonance position. The screening effect of the dielectric shell tends to be less apparent for a thicker shell thickness.Optical absorption spectra of dielectric shell coated gold nanorods are simulated using the discrete dipole ap- proximation method. The influence of the aspect ratio, shell thickness, dielectric constant of the shell, and surrounding medium on the longitudinal resonance mode is investigated. It is found that the coated dielectric shell does not affect the trend in the dependence of resonance position on the aspect ratio, while it broadens the resonant line width and reduces the sensitivity of plasmon resonance in response to changes of the surrounding medium. F~urthermore, the difference of dielectric constants between the shell and surrounding medium plays an important role in determining the resonance position. The screening effect of the dielectric shell tends to be less apparent for a thicker shell thickness.     

Weak-localization effect for light backscattered by surfaces with a complex structure

Results of laboratory measurements of the weak-localization effect for light scattered by surfaces with different characteristics are presented. The measurements were made in a range of phase angles of 0.2°–3.5°. The aim of the measurements was to study the influence of the choice of surface material (metal, dielectric), the size of particles of the scattering surface, their packing density, the reflectivity of a sample, and the wavelength of incident radiation on the effect. For the measurements, both nonpolarized and linearly polarized light was used. Powders of dielectric materials were found to enhance the weak-localization effect with increasing particle size, but the effect weakened starting with a certain size of the order of wavelength. The pressing of powders of dielectric transparent materials enhanced the opposition effect. This was most pronounced for samples with small-sized particles. The phase dependence of brightness became wider and more linear with decreasing reflectivity of the surface. A qualitative difference in the behavior of the phase dependence for the ratio of cross-and copolarized components was observed. For metals and metal-like materials, the ratio increased with decreasing phase angle. Dielectrics were found to have an opposite dependence.     

Enhanced laser induced damage threshold of dielectric antireflection coatings by the introduction of one interfacial layer

A new method for increasing laser induced damage threshold (LIDT) of dielectric antireflection (AR) coating is proposed. Compared with AR film stack of H2.5L (H:HfO2, L:SiO2) on BK7 substrate, SiO2 interfacial layer with four quarter wavelength optical thickness (QWOT) is deposited on the substrate before the preparation of H2.5L film. It is found that the introduction of SiO2 interfacial layer with a certain thickness is effective and flexible to increase the LIDT of dielectric AR coatings. The measured LIDT is enhanced by about 50%, while remaining the low reflectivity with less than 0.09% at the center wavelength of 1064 nm. Detailed mechanisms of the LIDT enhancement are discussed.     

石墨烯等二维原子晶体薄片样品的光学衬度计算及其层数表征

本文以鉴别机械剥离法制备的高质量石墨烯样品的层数为例, 阐明了如何利用传输矩阵来计算二维原子晶体薄片样品的光学衬度, 并进一步精确地鉴别其层数. 计算结果表明测试时所选用的显微物镜数值孔径对精确确定薄片样品的层数非常重要, 并为实验所证实. 同时提出了使用两个激光波长可以快速地表征样品尺寸接近物镜衍射极限的薄片样品层数的方法. 本文所采用的传输矩阵形式非常适合于计算二维原子晶体薄片样品的光学衬度, 并可以方便地推广到更复杂的多层衬底结构, 以便快速和准确地鉴别各种衬底上二维原子晶体薄片样品的厚度. 关键词： 二维原子晶体材料 层数 传输矩阵 光学衬度     

Heterostructures with self-organized quantum dots of Ge on Si for optoelectronic devices

In this paper an analysis of tendencies of Ge on Si quantum dots nanoheterostructures’ usage in different optoelectronic devices such as, for example, solar cells and photodetectors of visible and infra-red regions is carried out; a complex mathematical model for calculation of dependency on growth conditions of self-organized quantum dots of Ge on Si grown using the method of molecular beam epitaxy parameters is described. Ways of segregation effect and underlying layers’ influence are considered. It is shown that for realization of good device characteristics quantum dots should have high density, small sizes, uniformity, and narrow size distribution function. The desirable parameters of arrays of square and rectangular quantum dots for device application are attainable under certain growth conditions.     

Effective dielectric and photoelastic tensor components in thin layered superlattices

The effective photoelastic constants of a superlattice composed of thin alternating layers of orthorhombic symmetry are calculated as functions of dielectric, elastic and photoelastic constants of the constituents. In a preliminary step to this calculation, we also obtain the effective dielectric tensor for any symmetry of the layers. It is shown that appropriate combinations of these effective constants are arithmetic averages of the corresponding quantities in the constituents, each layer having a weight equal to its relative thickness.