共查询到18条相似文献,搜索用时 140 毫秒
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采用真空热蒸发法在石英玻璃基片上制备了具有特殊微柱状结构的碘化铯闪烁薄膜。运用扫描电子显微镜、X射线衍射仪和荧光光谱仪分别对碘化铯薄膜的形貌、结构及发光性能等进行了表征与分析。结果表明:在基片温度为260 ℃、沉积速率为3 nm·s-1时,所生长的碘化铯薄膜具有理想的微柱形貌、沿(110)晶面的择优取向和良好的透射性能;紫外光激发下,发射主峰为 438 nm,X射线激发下,发射主峰为315 nm,说明短波段发射峰需要的激发能量较高,而长波段发射峰对紫外光激发更为敏感。 相似文献
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采用一种设备简单、原料低廉的新型方法,在镀有ZnO先驱薄膜的(0001)蓝宝石上利用水热 法制备出了柱状ZnO阵列薄膜.用扫描电镜(SEM),X射线衍射(XRD)对样品的形貌和结构进行 了表征,结果显示ZnO薄膜为柱状阵列,基于蓝宝石衬底沿c轴择优生长,且(0004)摇摆曲线 半高宽度(FWHM)约为1.8°.此ZnO阵列薄膜具有很强的紫外发射光谱(PL).
关键词:
柱状ZnO阵列薄膜
水热法
(0001)蓝宝石
PL谱 相似文献
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采用倾斜式生长的方法,在本底真空为3×10-4 Pa,生长率为0.2 nm·s-1的条件下,通过改变衬底的法线方向与入射粒子流的夹角α,在ITO导电玻璃衬底上制备了ZnS纳米薄膜。在α=80°和85°时,样品的X射线衍射谱证实了不同倾斜角时所制备薄膜中均有纳米ZnS晶体形成,扫描电子显微镜(SEM)图像显示,所形成的薄膜均呈现出了柱状结构,并且倾斜角为85°时所得到的纳米柱直径大于80°时所得结果;在α=0°时,相应测量结果表明,虽然在不同衬底上也形成了纳米ZnS晶体薄膜,但并未见柱状结构,而是形成了一层均匀且致密的薄膜。对两种薄膜结构的生长动力学过程作了分析。ITO衬底上薄膜的透射光谱表明ZnS柱状薄膜能够提高可见光的透过率,因此对柱状ZnS纳米薄膜的研究将有利于提高电致发光器件的发光效率。 相似文献
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采用热蒸发法在ZnO缓冲层覆盖着Si衬底上合成了2D叶状的Zn晶枝结构,Zn的晶枝长度约为几十微米,厚度约为200nm,随后Zn晶枝在O2的气氛下热处理,在晶枝表面获得纤细、均匀的ZnO纳米线。晶枝按照无催化、自组装、汽相生长模式生长,晶枝最快生长方向是沿着载气气流的方向释放凝固潜热,XRD分析结果结果显示了Zn纳米线具有六角纤锌矿结构,Zn/ZnO的发光谱显示,在380nm处有一弱的UV近带边发射和中心在505nm处的强绿光发射,绿光发射归因于施主/受主对之间的辐射跃迁。 相似文献
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研究基片温度(120~300 ℃)和热处理温度(400℃)对电子束蒸发TiO2薄膜的结构和光学性能的影响.XRD分析表明,在120 ℃, 200 ℃和300 ℃的普通玻璃基片上采用电子枪加热蒸发制备的TiO2薄膜具有非晶态结构,沉积态薄膜经过400 ℃保温1 h的热处理后得到的相为具有(004)取向的锐钛矿相,晶粒大小在3.6~8.1 nm之间.透射谱分析表明,薄膜的折射率随着基片温度的升高而增加;热处理后,薄膜的折射率也相应提高,其原因来自于薄膜的晶化. 相似文献
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以M oS2粉末为原料,以氩气为携载气体,在400~600℃温度范围内利用热蒸发方法在硅衬底表面制备了不同厚度的M oS2薄膜.利用X射线衍射和扫描电子显微镜分析了M oS2薄膜的结构和表面形貌,发现M oS2薄膜由多晶M oS2粒子组成,颗粒均匀,平均纳米颗粒尺寸约为60 nm .利用紫外可见光光谱仪测量了其吸收特性,发现样品在720 nm附近有很强的吸收.应用霍尔效应和伏安法研究了M oS2/Si样品的接触特性和电子的运输特性,发现该异质结具有良好的整流特性,即正向电压下电流随电压呈指数增长,而在反向偏压下漏电流很小,电子迁移率可达到6.730×102 cm2/(V · s).实验结果表明MoS2薄膜具有良好的电学特性,可用来制备晶体管和集成电路等器件. 相似文献
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利用节流的高压冷却介质在微蒸发腔内相变吸热,设计了一种用于大功率激光二极管制冷的封装组件。该组件采用高热导的无氧铜,用精密线切割、化学腐蚀等技术制作微蒸发腔,再通过自制的焊接设备完成制冷组件的封装。按照大功率激光二极管条的发热模型,理论上对微蒸发腔制冷组件的温度分布进行了数值模拟,结果与60 W激光二极管条的散热实验符合较好,得到制冷剂流量为23 m L/min时的热阻为0.289℃/W。 相似文献
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研究了钼舟热蒸发工艺和离子束溅射方法制备的单层LaF3薄膜的特性。首先,采用分光光度计测量了LaF3薄膜的透射率和反射率光谱,使用不同模型拟合得出薄膜的折射率和消光系数。然后,采用应力仪测量了加热和降温过程中LaF3薄膜的应力-温度曲线。最后,采用X射线衍射仪测试了薄膜的晶体结构。实验结果表明,热蒸发制备的LaF3(RH LaF3)存在折射率的不均匀性,在193 nm,其折射率和消光系数分别为1.687和5×10-4,而离子束溅射制备的LaF3(IBS LaF3)折射率和消光系数分别为1.714和9×10-4。两种薄膜表现出相反的应力状态,RH LaF3薄膜具有张应力,而IBS LaF3具有压应力,退火之后其压应力减小。热蒸发制备的MgF2/LaF3减反膜在193 nm透过率为99.4%,反射率为0.04%,离子束溅射制备的AlF3/LaF3减反膜透过率为99.2%,反射率为0.1%。 相似文献
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Thin films of SnSb2S4 have been prepared on glass substrate by using thermal evaporation techniques. The films were annealed in argon gas at low pressure in sealed glass ampoules at 85 °C, 150 °C, 275 °C and 325 °C. XRD of the films reveal that the low temperature annealed films are poly crystalline while the as deposited films and high annealed films are in amorphous states. There is no adequate variation in the photoconductivity response of the amorphous and crystalline phases. The transmittance of the films is low and having no transmittance below 740 nm. The band gap calculated by ellipsometry technique is in the range of 1.82–3.1 eV. The films have n-type conductivity but the film annealed at 325 °C show p-type conductivity. 相似文献
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Michal Novotn?? P??emysl Fitl Anna Krasilnikova Sytchkova Ji???- Bul?-?? Jan Lanaok Petr Pokorna David Najdek Jia Boan 《Central European Journal of Physics》2009,7(2):327-331
The effect of pulsed laser treatment of metal, and metal blacks, was studied. Gold and black gold thin films were fabricated
by thermal evaporation of gold in a vacuum and nitrogen atmosphere respectively. Black gold films were grown in a nitrogen
atmosphere at pressures of 200 Pa and 300 Pa. UV pulsed laser radiation (λ = 266 nm, τ = 4 ns), with fluence ranging from 1 mJ·cm−2 to 250 mJ·cm−2 was used for the film treatment in a vacuum and nitrogen atmosphere. The nitrogen pressure was varied up to 100 kPa. Surface
structure modifications were analyzed by optical microscopy, atomic force microscopy (AFM) and scanning electron microscopy
(SEM). Energy dispersive X-ray spectroscopy (EDX) was used for chemical characterization of the samples. A significant dependence
of the film optical and structural properties on laser treatment conditions (laser fluence, ambient pressure and number of
applied pulses) was found. The threshold for observable damage and initiation of changes of morphology for gold and black
gold surfaces was determined. Distinct modifications were observed for fluences greater than 106 mJ·cm−2 and 3.5 mJ·cm−2 for the gold and black gold films respectively. Absorbtivity of the black gold film is found to decrease with an increase
in the number of laser pulses. Microstructural and nanostructural modifications after laser treatment of the black gold film
were observed. EDX analysis revealed that no impurities were introduced into the samples during both the deposition and laser
treatment.
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Xiaochun Wu Limei Lin Jing Lv Binping Zhuang Qu Yan Zhigao Huang 《Applied Surface Science》2008,254(20):6455-6460
Zinc sulfide (ZnS) films with optical thickness (reference wavelength is 620 nm) ranging from 310 to 1240 nm were deposited on quartz substrates at room temperature by a thermal evaporation system. The structure and morphology of the films were investigated by X-ray diffraction, atomic force microscopy, respectively. The optical properties of the films were determined by in situ transmittance measurements and wideband spectra photometric measurements, respectively. The experimental results show that the films exhibit cubic structure, and the intensity of the (2 2 0) diffraction peak enhances with the increase of optical thickness. Surface grain size and surface roughness increase monotonously with increasing film thickness. Refractive indices and extinction coefficients calculated by in situ transmittance measurements are well consistent with those calculated by wideband spectra photometric measurements. Both the refractive index and packing density of the film increase as the increase of film thickness, which confirms the film is positive inhomogeneous and has an expanding columnar structure. Extinction coefficients of the films increase with increasing film thickness, which results from the increase of surface roughness. 相似文献
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为了考察基底温度对氧化铝薄膜折射率以及沉积厚度的影响情况,在不同基底温度环境下,通过离子辅助电子束蒸发方式,在玻璃基底上制备了同一Tooling因子条件下所监测到相同厚度的Al2O3薄膜,利用分光光度计测量光谱透过率,依据光学薄膜相关理论,计算了基底温度在25℃~300℃范围内获得的膜层实际物理厚度为275.611 nm~348.447 nm,以及膜层折射率的变化。通过对实验结果的数值计算和曲线模拟,给出了基底温度对于薄膜的折射率和实际厚度的影响情况。 相似文献