Electrodeposition of mesoporous semimetal and magnetic metal films from lyotropic liquid crystalline phases

Mesoporous semimetal bismuth film and magnetic metal nickel and cobalt thin films have been electrodeposited from hexagonal or lamellar structured lyotropic liquid crystalline phases with polyoxyethylene surfactant. The liquid crystalline templates are characterized by low-angle X-ray diffraction (XRD) and polarized-light optical microscopy (POM). The metal films are characterized by low-angle and wide-angle XRD, scanning electron microscopy (SEM), and transmission electron microscopy (TEM). The magnetic measurements on the mesoporous nickel and cobalt films are shown to have higher coercivity (Hc) than the nonporous polycrystalline films.     

Patterning functional materials using channel diffused plasma-etched self-assembled monolayer templates

A simple and cost-effective methodology for large-area micrometer-scale patterning of a wide range of metallic and oxidic functional materials is presented. Self-assembled monolayers (SAM) of alkyl thiols on Au were micropatterned by channel-diffused oxygen plasma etching, a method in which selected areas of SAM were protected from plasma oxidation via a soft lithographic stamp. The patterned SAMs were used as templates for site-selective electrodeposition, electroless deposition and solution-phase deposition of functional materials such as ZnO, Ni, Ag thin films, and ZnO nanowires. The patterned SAMs and functional materials were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), atomic force microscopy (AFM), and tunneling AFM (TUNA).     

Oxalic acid sensors based on sol–gel nanostructured TiO<Subscript>2</Subscript> films

Titanium (IV) oxide semiconducting layers were prepared by means of the templated sol–gel method and deposited on conductive ITO substrates. The films were described by a series of techniques involving X-ray diffraction (XRD), Raman spectroscopy, X-ray reflectivity (XRR), atomic force microscopy (AFM), scanning electron microscopy (SEM) and ultraviolet–visible spectroscopy (UV–Vis). The photo-excitation properties of the films were characterized by electrochemical tests and evaluated from the obtained polarization curves. The generated photocurrents were measured in the presence of the hole-scavengers—oxalic acid and formic acid in the electrolyte. It was shown that especially in the case of oxalic acid the developed system can be used as an efficient and simpler concentration sensor. The relationship between values of the generated photocurrent and the layers’ thicknesses was also investigated.     

Porous cobalt hydroxide film electrodeposited on nickel foam with excellent electrochemical capacitive behavior

A new porous cobalt hydroxide film has been successfully electrodeposited on nickel foam from 0.1?M cobalt nitrate electrolyte at ?1.0?V vs. SCE without adding any surfactant. The microstructure and surface morphology of prepared cobalt hydroxide films were physically characterized by X-ray diffraction analysis and scanning electron microscopy. The results indicate that an interlaced network structure was obtained. The effects of electrodeposition time, deposition potential, and different substrates on the specific capacitance and microstructure of prepared porous ??-Co(OH)₂ thin film were systematically studied. The results indicate that the film deposited on nickel foam at ?1.0?V has excellent electrochemical properties. A maximum specific capacitance of 1473?F?g^?1 could be achieved at a current density of 2?A?g^?1.     

类金刚石碳薄膜对碳膜导电性能的影响

以聚酰亚胺薄膜为原料,经炭化形成碳膜;进而在碳膜表面制备了类金刚石碳(DLC)薄膜,研究了制备条件对碳膜导电性能的影响.采用扫描电镜分析了薄膜的表面形貌和微观结构;采用X射线衍射仪分析了薄膜的晶体结构.结果表明,DLC薄膜的电阻率随着沉积时间的延长先减小后增加;当沉积时间达到3 h时,相应DLC薄膜的电阻率达到最小值5.66×10-5Ω.m.     

The effect of complexing agent on crystal growth,structure and properties of nanostructured Cu_（2-x）S thin films

Thin films of Cu2 x S（x = 0, 1） were deposited on self-assembled, monolayer modified substrates in the copper–thiosulfate system with various concentrations of ethylene diamine tetraacetic acid（EDTA） at a low temperature of 70 8C. The thin films were characterized by means of X-ray diffraction（XRD）, X-ray photoelectron spectroscope（XPS）, field emission scanning electron microscopy（FESEM）, transmission electron microscopy（TEM）. The optical and photoelectrochemical（PEC） properties of the Cu2 x S semiconductor films were investigated by ultraviolet–visible（UV–vis） absorption spectroscopy and a three-electrode system. It is found that EDTA plays a key role in the process of Cu2 x S nanocrystals formation and growth. The compositions of the Cu2 x S nanocrystals varied from Cu2S（chalcocide） to Cu S（covellite） through adjusting the concentration of EDTA, which is used as a complexing agent to yield high-quality Cu2 x S films. The growth mechanisms of Cu2 x S nanocrystals with different EDTA concentrations are proposed and discussed in detail.     

Direct electrodeposition of PbTe thin films on n-type silicon

High quality lead telluride thin films were directly deposited onto n-type silicon (1 0 0) substrates by electrodeposition at room temperature. The deposition mechanism was studied using cyclic voltammetry. The films were characterized by scanning electron microscopy, energy dispersive X-ray, X-ray diffraction, and Fourier transform infrared spectroscopy. The results indicated that the deposited PbTe films exhibited a polycrystalline rock salt structure and good optical properties with a direct band gap of 0.31 eV.     

Electrodeposition and characterization of PbSe films on indium tin oxide glass substrates

Electrodeposition of lead selenide (PbSe) thin films on indium tin oxide (ITO) covered glass is described. While disodium salt of ethylenediaminetetraaceticacid was used to complex the lead ions, well crystallized, nearly stoichiometric and mirror-like PbSe films were deposited on ITO glass in potentiostatic mode using aqueous acidic electrolyte containing Pb and Se precursors at different bath temperature. The improvement of crystallinity of the PbSe films deposited at different temperature was studied using X-ray diffraction and Raman scattering. The morphology and composition of the films were characterized by scanning electron microscopy and energy disperse analysis by X-ray, respectively. The optical property of the film was studied by optical measurement techniques.     

电纺丝-气相沉积法制备碳包覆TiO_2纳米纤维及其光催化行为的研究

以聚乙烯吡咯烷酮(PVP)溶胶/钛酸正丁酯为前躯体,以静电纺丝法制备了PVP/Ti(OC4H9)4纤维。550℃下,空气氛中焙烧双组分纤维,得到直径60～300nm的TiO2纳米纤维。继而以气相沉积法制得碳包覆TiO2纳米纤维。用红外吸收光谱(FTIR)、X射线衍射(XRD)、扫描电子显微镜(SEM)、透射电子显微镜(TEM)等对纳米纤维进行了表征。与TiO2纳米纤维、TiO2纳米粉体相比,气相沉积法制备的碳包覆TiO2纳米纤维在光分解亚甲基蓝上表现出更好的催化性能。     

Titanium arsenide films from the atmospheric pressure chemical vapour deposition of tetrakisdimethylamidotitanium and tert-butylarsine

Thin films of titanium arsenide have been deposited from the atmospheric pressure chemical vapour deposition (APCVD) of [Ti(NMe(2))(4)] and (t)BuAsH(2) at substrate temperatures between 350-550 °C. Highly reflective, silver coloured films were obtained which showed borderline metallic-semiconductor resistivities. The titanium arsenide films were analyzed by scanning electron microscopy (SEM), Raman spectroscopy, wavelength dispersive analysis of X-rays (WDX), powder X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS). The films showed variable titanium to arsenic ratios but at substrate temperatures of 500 and 550 °C films with a 1 : 1 ratio of Ti : As, consistent with the composition TiAs, were deposited. Powder XRD showed that all of the films were crystalline and consistent with the formation of TiAs. Both nitrogen and carbon contamination of the films were negligible.     

Structure investigations of pure and partially oxidized copper films

Summary Copper films in the thickness range 25–150 nm are deposited on glass substrates under ultrahigh-vacuum conditions. After an annealing treatment at 150°C, the structure of the pure as well as of the partially oxidized films is investigated by means of X-ray diffraction analysis. Additional information is provided by scanning electron microscopy and resistivity measurements. The pure films have a polycrystalline structure with a marked (111) fiber texture. The crystallite shapes are plate-like with a plate thickness approximately corresponding to film thickness for thinner films, and cube-like for thicker films. A Cu₂O phase is detected after interaction with oxygen at pressures of 25 mbar and temperatures of 150°C.     

真空蒸镀法制备锡薄膜及其嵌锂电化学性能

采用真空蒸镀法在铜片基底上沉积锡薄膜作为锂离子电池负极材料,对所制备的锡薄膜采用扫描电子显微镜、X射线衍射表征,研究了其表面形貌和组成。 将制备的薄膜在手套箱中组装成CR2032型钮扣式电池,进行电化学测试,研究其电化学性能。 实验结果表明,在相同蒸发时间和基底温度的条件下,随着蒸发功率的增加,沉积的锡颗粒逐渐增大,相应的电化学性能降低。 以蒸发功率200 W、基底温度150 ℃制得的样品粒径为100~200 nm,含有Cu6Sn5合金相,以0.2C倍率充放电循环20周后放电容量达527 mA·h/g。     

In situ growth of CuS thin films on functionalized self-assembled monolayers using chemical bath deposition

Nano-structured CuS thin films were deposited on the functionalized -NH(2)-terminated self-assembled monolayers (SAMs) surface by chemical bath deposition (CBD). The deposition mechanism of CuS on the -NH(2)-terminated group was systematically investigated using field emission scanning electron microscope (FESEM), X-ray photoelectron spectroscope (XPS), UV-vis absorption. The optical, electrical and photoelectrochemical performance of CuS thin films incorporating with the X-ray diffraction (XRD) analysis confirmed the nanocrystalline nature of CuS with hexagonal crystal structure and also revealed that CuS thin film is a p-type semiconductor with high electrical conductivity (12.3Ω/□). The functionalized SAMs terminal group plays a key role in the deposition of CuS thin films. The growth of CuS on the varying SAMs surface shows different deposition mechanisms. On -NH(2)-terminated surfaces, a combination of ion-by-ion growth and cluster-by-cluster deposition can interpret the observed behavior. On -OH- and -CH(3)-terminated surfaces, the dominant growth mechanism on the surface is cluster-by-cluster deposition in the solution. According to this principle, the patterned CuS microarrays with different feature sizes were successfully deposited on -NH(2)-terminated SAMs regions of -NH(2)/-CH(3) patterned SAMs surface.     

Synthesis of carbon nanotubes using scrap tyre rubber as carbon source

Carbon nanotubes(CNTs) were successfully synthesized through chemical vapor deposition(CVD) method over cobalt catalysts using scrap tyre rubber as carbon source.The CNTs as produced were investigated by means of X-ray diffraction, thermogravimetric analysis,scanning electron microscope,transmission electron microscopy and Raman spectrum techniques.It was found that the obtained carbon material mainly existed in the form of CNTs.     

Radiation analytical material characterization of diamond layers deposited onto tungsten carbide

The characterization of diamonds deposited onto WC single crystals by means of the CVD-method is reported. Investigations were performed by scanning electron microscopy, X-ray diffraction methods and the Kossel reflection technique. Single diamond crystals were deposited in the form of icosahedrons. An orientation correlation between substrate single crystal and diamond crystals could not be proved. In the paper presented, reasons will be given for this fact.     

Inclined Substrate Deposition of Nanostructured TiO2 Thin Films for DSSC Application

Nanostructured TiO₂ films were deposited onto Indium Tin Oxide (ITO) and glass substrates by dc reactive magnetron sputtering at different substrate inclination angles. The structural and optical properties of the deposited films were studied by X-ray diffraction, scanning electron microscopy and UV–Vis spectrophotometer, respectively. Dye-sensitized solar cells (DSSC) were assembled using these TiO₂ films as photoelectrodes and the effect of the substrate inclination angle in the preparing process of TiO₂ films on the DSSC conversion efficiency was studied.     

Characteristics of monolayer behavior and multilayer film structures of comb polymers having different kinds of fluorocarbon side-chains

With comb polymers with different kinds of fluorocarbon side-chains, significant effects of spreading solvents on the monolayers at the air/water interface and the molecular arrangement in the deposited films could be found by the use of trifluoroacetic acid and its mixed solvents with n-hexane, depending on the atoms, fluorine or hydrogen, substituted at the end of the fluorocarbon side-chains. These facts are probably due to intralayer hydrogen bonding cooperating with the carbonyl groups of the long-chain esters. The deposited films of solid substrates were characterized by polarized near-edge X-ray absorption fine structure (NEXAFS) spectroscopy as well as in-plane X-ray diffraction and scanning electron and atomic force microscopy.     

Temperature-modulated nanostructures of ytterbium-doped Cobalt Selenide (Yb-CoSe) for photovoltaic applications

This research investigated the influence of temperature variation on the properties of ytterbium-doped cobalt Selenide (Yb-CoSe) nanostructures synthesized via the electrodeposition technique. The structural, optical, morphological, and elemental features of the synthesized films were investigated through X-ray diffractometry (XRD), ultraviolet–visible (UV–vis) spectroscopy, scanning electron microscopy (SEM), and energy dispersive X-ray spectroscopy (EDX) respectively. XRD results showed prominent peaks with a cubic phase. Good absorbance values in the visible region and reduced band gap energies upon the introduction of ytterbium were obtained from the optical analysis. Morphological results gave nanoclusters of varying sizes spread throughout the substrate surface. The elemental constituents of the deposited films were evident from the EDX spectra. The synthesized films have significant potential to be used in solar cells and optical devices.     

Mg掺杂GaN纳米线的结构及其特性

利用类似Delta掺杂技术在硅衬底上沉积Mg:Ga2O3薄膜, 然后在850 ℃下对薄膜进行氨化, 反应后制备出大量Mg掺杂GaN纳米线. 采用扫描电子显微镜(SEM)、X射线衍射(XRD)、傅里叶变换红外(FTIR)光谱和高分辨透射电子显微镜(HRTEM)对样品进行分析.结果表明, Mg掺杂GaN纳米线具有六方纤锌矿单晶结构, 纳米线的直径在30-50 nm范围内, 长度为几十微米.     

Novel Electroless Deposition of Cu<Subscript>3</Subscript>Se<Subscript>2</Subscript> Film on Silicon Substrate by a Simple Galvanic Displacement Process

A novel electroless deposition method for depositing highly uniform adhesive thin films of copper selenide (Cu₃Se₂) on silicon substrates from aqueous solutions is described. The deposition is carried out by two coupled galvanic reactions in a single deposition bath containing copper cations, hydrogen fluoride, and selenous acid: the galvanic deposition of copper on silicon and the subsequent galvanic reaction between the deposited copper with selenous acid in the deposition bath. The powder X-ray diffraction and scanning electron microscopy are used to characterize and examine the deposited films.