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The problem of the temporal and spatial dependences of the parameters of the action of a modulated fast-electron beam on a dense gas is posed on the basis of the transport equation. The problem is simplified by making it nondimensional and by transforming to the Fokker-Planck approximation. A Green's function formalism is developed for this problem and is used to express the solution of the general nonstationary problem in the form of a convolution of a nonstationary boundary flow with a stationary Green's function. The use of the derived equation is illustrated using as an example the solution of a problem with the simplest stationary Green's function corresponding to the straight-ahead approximation. This approximation is used to consider a general relativistic case with model scattering cross sections. The methods and results of a numerical computer solution of the nonstationary problem of electron retardation in the upper layer of the atmosphere are surveyed.Translated from Trudy Ordena Lenina Fizicheskogo Instituta im. P. N. Lebedeva AN SSSR, Vol. 145, pp. 172–188, 1984.  相似文献   

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We consider interacting electrons confined to a slab of finite thickness or a half space in the random phase approximation. The electronic charge is assumed to be neutralized by a homogeneous positive background. A linear response function is introduced from which it is possible to calculate the induced density variation of the electron gas, caused by an external field. The linear response function also determines the Helm-holtz free energy and, by a sum rule, the density of the undisturbed system. The interaction of a classical point charge with the electrons of a half-space is discussed. In addition, a formula for the surface energy is given.  相似文献   

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The response of the electron system to an external perturbation in an insulating medium is considered in the context of the electron density functional method. The energy functional minimization relies on the proper choice of the trial function considering different spatial scales of the electron polarization. An efficient scheme for the density functional parametrization is suggested. The electron response to atomic displacements and external electric fields has been calculated for a simple model of electron polarization centers embedded into the homogeneous dielectric background. Good agreement with the experiment is achieved for the phonon spectra ofSi, Ge, and α-Sn. The electron density induced in the external homogeneous electric field is in good agreement with that calculated by the well-known ab initio methods. V. D. Kuznetsov Siberian Physical-Technical Institute at Tomsk State University. Translated for Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6 pp. 30–37, June, 1999.  相似文献   

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Dense Si nano-dots with a surface area density of >1010 cm?2 were fabricated by excimer laser induced crystallization of 15 nm-thick amorphous Si thin films. The enhanced electron field emission characteristics were found from laser irradiated samples. The threshold electric field is as low as 9.8V/μm and the field enhancement factor can reach as large as 719, which is compatible with the other good cold cathode materials. The improvements in field emission behavior can be associated with the change in the surface morphology after laser irradiation as well as the enhanced internal electric field due to the formation of Si nano-dots within the films.  相似文献   

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A Kramerslike classical pseudopotential which includes Diffraction and Symmetry effects is worked out for kBT?1 Ry.  相似文献   

9.
能量20 MeV、流强2.5 kA的电子束脉冲可以在数十ns的时间内将靶材料加载至温密物质状态,进而可以开展材料状态方程、电导率以及不透明度等的实验研究工作。介绍了在神龙一号加速器上开展温密物质实验研究的束靶作用方式以及相应的测试技术。对电子束在直径0.3 mm、长1 mm的金属靶丝内的能量沉积和流体动力学响应进行了数值模拟。结果表明:靶丝的温度随着靶材料原子序数的增加而上升,而靶丝内温度分布的均匀性随着原子序数的增加而降低;在电子束加载后40 ns时刻Ta丝内的最高温度可以达到约1.6 eV。  相似文献   

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能量20 MeV、流强2.5 kA的电子束脉冲可以在数十ns的时间内将靶材料加载至温密物质状态,进而可以开展材料状态方程、电导率以及不透明度等的实验研究工作。介绍了在神龙一号加速器上开展温密物质实验研究的束靶作用方式以及相应的测试技术。对电子束在直径0.3 mm、长1 mm的金属靶丝内的能量沉积和流体动力学响应进行了数值模拟。结果表明:靶丝的温度随着靶材料原子序数的增加而上升,而靶丝内温度分布的均匀性随着原子序数的增加而降低;在电子束加载后40 ns时刻Ta丝内的最高温度可以达到约1.6 eV。  相似文献   

11.
李劲  刘红侠  李斌  曹磊  袁博 《物理学报》2010,59(11):8131-8136
在结合应变Si,高k栅和SOI结构三者的优点的基础上,提出了一种新型的高k栅介质应变Si全耗尽SOI MOSFET结构.通过求解二维泊松方程建立了该新结构的二维阈值电压模型,在该模型中考虑了影响阈值电压的主要参数.分析了阈值电压与弛豫层中的Ge组分、应变Si层厚度的关系.研究结果表明阈值电压随弛豫层中Ge组分的提高和应变Si层的厚度增加而降低.此外,还分析了阈值电压与高k栅介质的介电常数和应变Si层的掺杂浓度的关系.研究结果表明阈值电压随高k介质的介 关键词: 应变Si k栅')" href="#">高k栅 短沟道效应 漏致势垒降低  相似文献   

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An effective Coulomb interaction taking into account the diffraction effects is used to sum the series of bubbles diagrams building up the short-range part of the pair correlation function.  相似文献   

13.
王斌  张鹤鸣  胡辉勇  张玉明  宋建军  周春宇  李妤晨 《物理学报》2013,62(21):218502-218502
结合了“栅极工程”和“应变工程”二者的优点, 异质多晶SiGe栅应变Si MOSFET, 通过沿沟道方向使用不同功函数的多晶SiGe材料, 在应变的基础上进一步提高了MOSFET的性能. 本文结合其结构模型, 以应变Si NMOSFET为例, 建立了强反型时的准二维表面势模型, 并进一步获得了其阈值电压模型以及沟道电流的物理模型. 应用MATLAB对该器件模型进行了分析, 讨论了异质多晶SiGe栅功函数及栅长度、衬底SiGe中Ge组分等参数对器件阈值电压、沟道电流的影响, 获得了最优化的异质栅结构. 模型所得结果与仿真结果及相关文献给出的结论一致, 证明了该模型的正确性. 该研究为异质多晶SiGe栅应变Si MOSFET的设计制造提供了有价值的参考. 关键词: 异质多晶SiGe栅 应变Si NMOSFET 表面势 沟道电流  相似文献   

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The long time tails of the correlation functions that determine the self-diffusion coefficient and the kinetic parts of the shear viscosity and heat conductivity in a one-component plasma are calculated using a systematic kinetic theory. The results are in agreement with those obtained from the phenomenological mode coupling theory. The formal kinetic theory calculations of previous workers, who obtained incomplete long time tail results, are also discussed.  相似文献   

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Renormalization of the scattering length considerable at high polarizability values, helps describe the mobility increase with density.  相似文献   

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Renormalization of the scattering length considerable at high polarizability values, helps describe the mobility increase with density.  相似文献   

17.
V. I. Lenin All-Union Institute of Electrical Engineering. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Radiofizika, Vol 34, No. 1, pp. 70–76, January, 1991.  相似文献   

18.
辛艳辉  刘红侠  范小娇  卓青青 《物理学报》2013,62(15):158502-158502
为了进一步提高深亚微米SOI (Silicon-On-Insulator) MOSFET (Metal-Oxide Semiconductor Field Effect Transistor) 的电流驱动能力, 抑制短沟道效应和漏致势垒降低效应, 提出了非对称Halo异质栅应变Si SOI MOSFET. 在沟道源端一侧引入高掺杂Halo结构, 栅极由不同功函数的两种材料组成. 考虑新器件结构特点和应变的影响, 修正了平带电压和内建电势. 为新结构器件建立了全耗尽条件下的表面势和阈值电压二维解析模型. 模型详细分析了应变对表面势、表面场强、阈值电压的影响, 考虑了金属栅长度及功函数差变化的影响. 研究结果表明,提出的新器件结构能进一步提高电流驱动能力, 抑制短沟道效应和抑制漏致势垒降低效应, 为新器件物理参数设计提供了重要参考. 关键词: 非对称Halo 异质栅 应变Si 短沟道效应  相似文献   

19.
We argue that using an equilibrated gas of neutrinos it is possible to probe the phase diagram of QCD for finite isospin and small baryon chemical potentials. We discuss this region of the phase diagram in detail and demonstrate that for large enough neutrino densities a Bose–Einstein condensate of positively charged pions arises. Moreover, we show that for non-zero neutrino density the degeneracy in the lifetimes and masses of the charged pions is lifted.  相似文献   

20.
We propose a general method to derive kinetic equations for dense soliton gases in physical systems described by integrable nonlinear wave equations. The kinetic equation describes evolution of the spectral distribution function of solitons due to soliton-soliton collisions. Owing to complete integrability of the soliton equations, only pairwise soliton interactions contribute to the solution, and the evolution reduces to a transport of the eigenvalues of the associated spectral problem with the corresponding soliton velocities modified by the collisions. The proposed general procedure of the derivation of the kinetic equation is illustrated by the examples of the Korteweg-de Vries and nonlinear Schr?dinger (NLS) equations. As a simple physical example, we construct an explicit solution for the case of interaction of two cold NLS soliton gases.  相似文献   

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