Analysis on the high luminous flux white light from GaN-based laser diode

We fabricated a phosphor-conversion white light using an InGaN laser diode that emits 445 nm and phosphor that emits in the yellow region when excited by the blue laser light. At 500 mA injection current the luminous flux and the luminous efficacy were 113 lm and 44 lm/W, respectively. The relationship of the luminous flux and the luminous efficacy of the white light with an injection current were discussed. Based on the evaluation method for luminous efficacy of light sources established by the Commission International de I’Eclairage (CIE) and the phosphor used in this experiment, a theoretical analysis of the experiment results and the maximum luminous efficacy of this white light fabrication method were also presented.     

White light emission from ultraviolet laser diode

A phosphor-conversion white light using an InGaN laser diode that emits 405 nm near-ultraviolet (n-UV) light and phosphors that emit in the red/green/blue region when excited by the n-UV light was fabricated. The relationship of the luminous flux and the luminous efficacy of the white light with injection current were discussed. Based on the evaluation method for luminous efficacy of light sources established by the Commission International de I’Eclairage (CIE) and the phosphor used in this experiment, a theoretical analysis of the experiment results and the maximum luminous efficacy of this white light fabrication method were also presented.     

A new‐generation color converter for high‐power white LED: transparent Ce3+:YAG phosphor‐in‐glass

Currently, the major commercial white light‐emitting diode (WLED) is the phosphor‐converted LED made of the InGaN blue‐emitting chip and the Ce³⁺:Y₃Al₅O₁₂ (Ce:YAG) yellow phosphor dispersed in organic epoxy resin or silicone. However, the organic binder in high‐power WLED may age easily and turn yellow due to the accumulated heat emitted from the chip, which adversely affects the WLED properties such as luminous efficacy and color coordination, and therefore reduces its long‐term reliability as well as lifetime. Herein, an innovative luminescent material: transparent Ce:YAG phosphor‐in‐glass (PiG) inorganic color converter, is developed to replace the conventional resin/silicone‐based phosphor converter for the construction of high‐power WLED. The PiG‐based WLED exhibits not only excellent heat‐resistance and humidity‐resistance characteristics, but also superior optical performances with a luminous efficacy of 124 lm/W, a correlated color temperature of 6674 K and a color rendering index of 70. This easy fabrication, low‐cost and long‐lifetime WLED is expected to be a new‐generation indoor/outdoor high‐power lighting source.     

Effect of nanometer sized Ni dot/Ag/Pt reflection metal of InGaN light emitting diodes on conversion efficiency of yellow phosphor

Nanometer sized Ni-dot/Ag/Pt metal coating films with different Ni-dot sizes were incorporated in InGaN based blue light emitting diodes as p-type reflection metal to enhance the extraction efficiency of blue light. For the reflectivity change from 84% to 93.7%, the optical output power of blue light before phosphor coating and the luminous flux of white light after phosphor deposition have improved by 49.3% and 58.2% at 350 mA, respectively. For the presented white light devices, the blue and yellow luminescence respectively has been improved relatively up to 1.52 and 1.67 times. The improved extraction efficiency of yellow light from the phosphor integrated blue light emitting diode is thought to be attributed to the reduction of round trip loss of blue and yellow light inside the device due to the enhanced reflectivity of nanometer sized Ni/Ag/Pt p-type reflection metal.     

白光LED极限流明效率的计算

对蓝光芯片加黄色荧光粉制备白光LED方法的流明效率进行了理论计算。根据光度学原理,我们考虑到视觉函数V(λ)的修正,以色坐标为x=0.325,y=0.332,显色指数为81.5,色温为5 914 K的白光LED发光光谱为依据,计算了白光LED流明效率的理论极限:得出每瓦白光LED辐射光功率产生的光通量为298.7 lm,白光LED发射的总光子数为2.7×10¹⁸。在理想情况下,注入一个电子-孔穴对产生一个蓝光光子,设荧光粉的量子效率为1,因此,注入的电子-孔穴对数亦等于白光光子数,进而计算出白光LED每辐射1 W的光功率所需的电功率为1.51 W,上述白光LED发光光谱对应的白光LED的电-光转换的理论极限流明效率为197.8 lm/W。     

双层荧光粉涂覆对COB封装LED出光的影响

为了提高LED出光量,基于传统的荧光粉涂覆设计了一种双层荧光粉涂覆结构。通过对上下涂覆层浓度及上层涂覆量的研究,探究双层涂覆结构对COB封装LED出光的影响。结果表明在通电电流为440 mA时,可在实验中实现15 W的COB封装结构的白光LED:涂覆单一黄色荧光粉,上下层胶粉比为14.2～28且上层涂覆体积为下层的0.8倍时,COB封装LED的光通量为2 179 lm,光效可达145.3 lm/W,显指为63,出光量最大提升为7.82%;荧光粉调整为黄绿粉和红粉的配合使用后,最终实现色温、光效及显指分别为4 854 K、129.7 lm/W和81.2。因此,双层荧光粉涂覆结构可以提高COB封装LED的光学性能,对实际生产有一定的应用价值。     

半导体激光激发荧光粉转换白光照明系统设计

单管蓝光半导体激光器功率相对较低,为了获得高功率激光,利用多单管光纤耦合技术实现10 W蓝光激光输出,输出的激光激发荧光粉片合成的白光光源作为汽车远光灯光源。根据汽车照明法规要求设计了汽车远光灯照明系统并详述了抛物面反光罩、双凹透镜和荧光粉片的光学结构及对反光罩曲线参数、双凹透镜和荧光粉片的放置位置对光源色温均匀性及照度的影响。模拟设计了顶端19 mm×31.6 mm椭圆形开孔、底部直径5 mm圆形开孔、高60 mm的椭圆抛物面反光罩,荧光粉片置于距反光罩底部15 mm处时,在距光源25 m处的接收面上得到了5 m×12 m的椭圆光斑,白光光源的光通量为1 025 lm,中心色温为5 880 K,中心色坐标为(x=0.322 6,y=0.369 2),该汽车远光灯照明系统满足汽车照明法规要求。     

色坐标对白光LED光通量的影响

研究了在蓝光芯片加黄色荧光粉制备白光LED方法中,色坐标位置对光通量的影响。在同样蓝光功率条件下,我们对标准白光点(色坐标x=0.33±0.05,y=0.33±0.05)附近不同色坐标位置的光通量进行了计算。假设(0.325,0.332)位置流明效率为100 lm/W,计算得出,最大光通量对应的色坐标位置为(0.35,0.38),光通量为112 lm;最小光通量对应的色坐标位置为(0.29,0.28),光通量为93.5 lm。相对于100 lm的变化幅度达到18.5%。通过与实验数据的对比和分析,进一步验证了白光LED光通量随色坐标增大而增加的这一趋势。     

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研究了无汞等离子体平板荧光光源的气压、气隙、气体组成、光源结构及荧光粉加工对光源发光效率的影响。通过优化,光源的发光效率显著提高。实验结果表明,在450Torr、纯氙气、气体间隙0.7mm、前板玻璃厚为2.8mm,在前板采用60%浓度荧光粉图案印刷获得约20μm厚荧光粉层时,尺寸130mm×90mm的等离子体平板光源的发光效率和亮度超过40lm•w-1、11000cd•m-2,光通量超过500lm。通过优化,获得了较高的亮度和较高的发光效率,讨论了各影响因素引起光源发光效率变化的原因。     

Blue diode pumped solid-state lasers for digital projection

Lasers present many advantages over currently used light sources for projection applications. Compact as well as efficient displays can be realized with RGB laser systems. The extreme brightness and collimation of lasers enable very efficient light collection. For portable, battery-powered microprojectors or even integrated devices, where the efficiency becomes even more critical, 50 mW per color is enough for a luminous flux on the projection screen of 20 lm. While blue and red diode lasers in this power range are becoming widely available, the bottleneck for this application is still the lack of integrated green laser sources. We present here a blue-diode pumped Pr³⁺-doped LiYF laser emitting at 523 nm. By optimizing on many aspects of the crystal and resonator, we increased the laser output power up to 169.4 mW, which corresponds to a total power conversion efficiency of 7%. Moreover, lasing in red can be obtained with the same crystal with similar or even better output powers. This makes the Pr:YLF laser an ideal candidate for an RGB projection source together with blue InGaN diodes.     

White light emission from blue and near ultraviolet light-emitting diodes precoated with a Sr3SiO5:Ce3+,Li+ phosphor

White-light-emitting diodes (WLEDs) were fabricated by combining a yellow Sr3SiO5:Ce3+, Li+ phosphor with a blue light-emitting diode (LED) (460 nm chip) or a near ultraviolet (n-UV) LED (405 nm chip), respectively. Color temperature (Tc) of Sr3SiO5:Ce3+, Li+-based WLEDs could be tuned from 6500 to 100,000 K (blue LED pumping) and from 4900 to 50,000 K (n-UV LED pumping) without mixing with other phosphors. The blue LED-pumped WLED showed excellent white light (luminous efficiency=31.7 lm/W, Tc=6857 K) at 20 mA. This WLED showed a stable color coordinates property against an increase of the forward current. An n-UV LED-pumped WLED also showed bright white light (25.0 lm/W, 5784 K) at 20 mA.     

High-power 2.8 W blue-violet laser diode for white light sources

High-power 2.8 W blue-violet InGaN LD was fabricated, applying AlN facet coating technology. The AlN was found to be crystallized on the facets and very stable even after 2200 h cw operation. Luminous flux over 380 lm is obtained with a phosphor-converted LD excitation white light source using just a single laser chip at 1A operating current.     

中性色温下两基色、三基色荧光粉转换白光LED的光谱优化

针对中性色温4 870 K,考虑斯托克斯损失,研究了两基色、三基色的白光LED的光谱优化。结果表明:InGaN/GaN基蓝光LED激发YAG荧光粉合成的白光光视效能可高达483.5 lm/W,但显色性较差,计算的斯托克斯效率为83.9%。加入窄带红色荧光粉或红光LED,优化后的光视效能降低为343 lm/W,但显色指数升至94.7,同时计算得到该LED的斯托克斯效率为84.4%。对该优化的三基色LED光谱进行可调色温白光的特性分析,发现较高色温 (＞4 000 K)对应的显色指数普遍高于低色温(＜4 000 K)的显色指数。     

Study of UV excited white light‐emitting diodes for optimization of luminous efficiency and color rendering index

Wavelength down‐converted white‐light sources excited by near ultraviolet light‐emitting diodes require specific phosphor properties in order to generate high‐quality white light (namely, light with good color rendition and stability of color coordinate). Simulation and experimental results are discussed, with particular emphasis on the spectral distribution property of red phosphor required to realize high values of luminous efficiency and color rendition. A peak wavelength of 610 nm and an FWHM of 80 nm for the spectral power distribution were proposed, and co‐doped phosphate materials were synthesized successfully. This can contribute to a white‐light source with a luminous efficiency of 45 lm/W and color rendering index greater than 90 at a color temperature of 5600 K and an operational current of 20 mA. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Synthesis and luminescence of Eu-doped alkaline-earth apatites for application in white LED

A series of Eu²⁺-doped alkaline-earth apatites (alkaline-earth=Ca, Sr and Ba) were synthesized by a solid state reaction method with excess chlorides, and the effect of the used excess chlorides on the luminescent property of the synthesized products was discussed. Photoluminescence measurements showed that Eu²⁺-doped calcium apatite exhibited intensely blue wide-band emission peaking at 457 nm under near UV excitation among the Eu²⁺-doped Ca, Sr and Ba apatites. Blue and white LEDs were successfully fabricated by pre-coating the calcium apatite phosphors onto ∼395 nm-emitting InGaN chips. The CIE coordinates, color temperature, luminous efficacy and rendering index value of the fabricated white LED are (0.3432, 0.3234), 4969 K, 8 lm/W and 80, respectively. The results indicate that the Eu²⁺-activated calcium apatite phosphor is a promising candidate as a blue component for fabrication of near UV-based white LEDs.     

Warm-white light-emitting diode with yellowish orange SiALON ceramic phosphor

A warm-white light-emitting diode (LED) without blending of different kinds of phosphors is demonstrated. An approach that consists of a blue LED chip and a wavelength-conversion phosphor is carried out. The phosphor is a newly developed yellowish orange CaEuSiAlON ceramic phosphor with high efficiency. The CIE1931 chromaticity coordinates (x, y) are (0.458, 0.414), the color temperature is 2750 K, and the luminous efficacy of this LED is 25.9 lm/W at room temperature and with a forward-bias current of 20 mA. The chromaticity of the assembled LED is more thermally stable than that of a LED with a conventional oxide phosphor (YAG:Ce) because of the better thermal stability of the oxynitride phosphor.     

TiO2微粒对远程荧光粉膜及白光发光二极管器件光色性能的影响

利用热压法将TiO₂微粒掺入至YAG:Ce荧光粉和硅树脂中制备出远程荧光粉膜并封装成白光发光二极管(LED)器件, 通过荧光粉相对亮度仪、双积分球测试系统和可见光光谱分析系统对样品的光色性能及机理进行了研究. 结果表明: TiO₂的散射效应能够显著提高蓝光的利用率和黄光的透射强度, 白光LED器件的光通量在TiO₂浓度为0.966 g/cm³ 时达到最高值415.28 lm(@300 mA, 9.3 V), 提高了8.15%, 相关色温从冷白6900 K逐渐变化至暖白3832 K. TiO₂的掺入不仅提高了远程荧光粉膜的发射强度和白光LED器件的光通量, 同时能调控其相关色温.     

多芯CSP-LED芯片间距对热拥堵的影响

在铝基板上贴片了不同间距的四颗芯片级封装发光二级管(CSP-LED)模组,测试了不同贴片间距CSP-LED模组的EL光谱、流明效率、光通量、相关色温等光电参数。结果显示,在小电流(20~400 mA)下,随着注入电流的增大,不同排布间距的蓝、白光样品的光电性能基本呈现相同的变化规律,即光通量、光功率呈线性增长,光效基本保持稳定;在大电流(1~1.5 A)下,随着芯片间排布间距减小,EL光谱积分强度降低,色温升高,红色比下降,排布间距为0.2 mm的光通量衰减了84.58%,相比之下排布间距为3 mm和5 mm的光通量衰减明显减缓,分别为8.96%和3.58%,这些现象与禁带宽度、热应力、非辐射复合等因素有关。结果表明,CSP白光LED光通量衰减主要是荧光粉退化导致的,考虑到实际生产成本问题,排布间距为3 mm时,有利于热量散出,进而提高LED光电性能特性及其自身的使用寿命。     

基于Ce:YAG单晶的白光发光二极管性能研究

以Ce:YAG单晶取代传统Ce:YAG荧光粉用于制备白光发光二极管(LED),研究了Ce:YAG单晶厚度及驱动电压的变化对其发射光谱、色坐标、亮度、光视效能和色温的影响。研究结果表明,在基于Ce:YAG单晶的白光LED中,发射光的色坐标以及蓝光与黄绿光之间的相对强度可通过对Ce:YAG单晶片厚度的改变进行调整。在恒定电压驱动下,白光LED样品的亮度、光视效能和色温均随单晶片厚度的减小而增加。当Ce:YAG单晶厚度为0.6mm时,可获得较纯的白发射光,并且其色坐标具有较高的可靠性和稳定性,基本不受驱动电压变化的影响。研究结果表明Ce:YAG单晶是一种可用于新型白光LED的理想荧光材料。     

微通道反应器合成高质量的无机钙钛矿量子点及其LED应用

提出一种快速、高效合成高质量无机钙钛矿量子点（CsPbBr₃）的微通道反应器,通过调节前驱体的浓度和流速,可实现荧光光谱绿色至蓝色的转变,波长范围为515~464 nm。利用合成的绿色CsPbBr₃量子点和红色荧光粉制备薄膜,覆盖在蓝色LED芯片表面上,在20 mA的驱动电流下获得流明效率最高可达62.93 lm/W的白光。这种高效的白光LED展示出钙钛矿量子点在低成本显示、照明和光通信等应用领域中巨大的潜力。