Band alignment at the interfaces of Al2O3 and ZrO2-based insulators with metals and Si

Internal photoemission of electrons was used to determine the band alignment in metal (Mg, Al, Ni, Cu, Au)-oxide-silicon structures with Al₂O₃- and ZrO₂-based insulators. For Al₂O₃- and ZrO₂ layers grown on Si by atomic layer deposition the barrier height between the Si valence band and the oxide conduction band was found to be 3.25 and 3.1 eV, respectively. Thermal oxidation of the Si/oxide stacks results in a barrier height increase to ≈4 eV for both cases due to formation of a silicate interlayer. However, there is a significant sub-threshold electron emission both from silicon and metals, indicating a high density of states in the band gap of the insulators. These states largely determine the electron transport across metal oxides and may also account for a significant dipole component of the potential barrier at the metal/ZrO₂ and metal/Al₂O₃ interfaces.     

Interface and material characterization of thin Al2O3 layers deposited by ALD using TMA/H2O

Thin Al₂O₃ layers were grown by atomic layer deposition using trimethylaluminum (TMA) and water as precursors on 1.2 nm thermal SiO₂ and HF cleaned Si surfaces. The stoichiometry and the contamination (H, OH and C) of as-deposited and N₂ annealed thick Al₂O₃ layers were characterized by secondary ion mass spectrometry (SIMS), elastic recoil detection analysis (ERDA) and X-ray photoelectron spectroscopy (XPS). We show a perturbed region (≈5 nm thick) at the Al₂O₃/Si interface by XPS and Auger electron spectrometry (AES). Post-deposition annealings induced important interface oxidation, Si atoms injection and SiO₂/Al₂O₃ mixture whereas the initial interface was abrupt. Silicon oxidation before Al₂O₃ growth highly limits interfacial oxidation and improves interfacial quality. We proposed that OH groups may play a key role to explain silicon oxidation during post-deposition annealings in inert ambience with low oxygen contamination levels.     

Atomic layer deposition of Al2O3, ZrO2, Ta2O5, and Nb2O5 based nanolayered dielectrics

Ta₂O₅, Ta-Nb-O, Zr-Al-Nb-O, and Zr-Al-O mixture films or solid solutions were grown on Si(1 0 0) substrates at 300 °C by atomic layer deposition. The equivalent oxide thickness of Ta₂O₅ based capacitors was between 1 and 3 nm. In Zr-Al-O films, the high permittivity of ZrO₂ was combined with high resistivity of Al₂O₃ layers. The permittivity, surface roughness and interface charge density increased with the Zr content and the equivalent oxide thickness was between 2.0 and 2.5 nm. In the Zr-Al-Nb-O films the equivalent oxide thickness remained at 1.8-2.0 nm.     

Fabrication of (1 1 1)-oriented Si layers on SiO2 substrates by an aluminum-induced crystallization method and subsequent growth of semiconducting BaSi2 layers for photovoltaic application

We have prepared (1 1 1)-oriented Si layers on SiO₂ (fused silica) substrates from amorphous-Si(a-Si)/Al or Al/a-Si stacked layers using an aluminum-induced crystallization (AIC) method. The X-ray diffraction (XRD) intensity from the (1 1 1) planes of Si was found to depend significantly on growth conditions such as the thicknesses of Si and Al, deposition order (a-Si/Al or Al/a-Si on SiO₂), deposition technique (sputtering or vacuum evaporation) and exposure time of the Al layer to air before the deposition of Si. The crystal orientation of the Si layers was confirmed by θ−2θ, 2θ XRD and electron backscatter diffraction (EBSD). The photoresponse properties of semiconducting BaSi₂ films formed on the (1 1 1)-oriented Si layers by the AIC method were measured at room temperature. Photocurrents were clearly observed for photon energies greater than 1.25 eV. The external quantum efficiencies of the BaSi₂ were also evaluated.     

Characterization of ALCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy

The atomic layer chemical vapor deposition (ALCVD) deposited Al₂O₃ and ZrO₂ films were investigated by ex situ X-ray photoelectron spectroscopy. The thickness dependence of band gap and valence band alignment was determined for these two dielectric layers. For layers thicker than 0.9 nm (Al₂O₃) or 0.6 nm (ZrO₂), the band gaps of the Al₂O₃ and ZrO₂ films deposited by ALCVD are 6.7±0.2 and 5.6±0.2 eV, respectively. The valence band offsets at the Al₂O₃/Si and ZrO₂/Si interface are determined to be 2.9±0.2 and 2.5±0.2 eV, respectively. Finally, the escape depths of Al 2p in Al₂O₃ and Zr 3p3 in ZrO₂ are 2.7 and 2.0 nm, respectively.     

Si(0 0 1) surface oxidation by N2O

Ultra-thin homogeneous oxynitride films are prepared on Si(0 0 1). The Si surface is cleaned in UHV by heating (flashing) and is exposed to different pressures of N₂O at altered temperatures. Thus oxynitride layers of different thickness and different properties are grown depending on the N₂O pressure and the Si temperature. This is illustrated by a schematic diagram. The properties of the different oxynitride layers were studied by a combined photoemission electron microscopy (PEEM) and photoelectron spectroscopy (PES) investigation using highly monochromatic synchrotron radiation. The amount of oxygen and nitrogen incorporated in the oxynitride layers is determined from the PES measurements. The typical surface morphology for different preparation conditions is shown in PEEM images.     

Preparation of single-crystalline ZnO films on ZnO-buffered a-plane sapphire by chemical bath deposition

High-quality zinc oxide (ZnO) films were successfully grown on ZnO-buffered a-plane sapphire (Al₂O₃ (1 1 2¯ 0)) substrates by controlling temperature for lateral growth using chemical bath deposition (CBD) at a low temperature of 60 °C. X-ray diffraction analysis and transmission electron microscopy micrographs showed that the ZnO films had a single-crystalline wurtzite structure with c-axis orientation. Rocking curves (ω-scans) of the (0 0 0 2) reflections showed a narrow peak with full width at half maximum value of 0.50° for the ZnO film. A reciprocal space map indicated that the lattice parameters of the ZnO film (a=0.3250 nm and c=0.5207 nm) were very close to those of the wurtzite-type ZnO. The ZnO film on the ZnO-buffered Al₂O₃ (1 1 2¯ 0) substrate exhibited n-type conduction, with a carrier concentration of 1.9×10¹⁹ cm⁻³ and high carrier mobility of 22.6 cm² V⁻¹ s⁻¹.     

The effect of cooling rate during hydrothermal synthesis of ZnO nanorods

The hydrothermal method was employed in order to obtain zinc oxide nanorods directly on Si/SiO₂/Ti/Zn substrates forming brush-like layers. In the final stages of synthesis, the reaction vessel was naturally cooled or submitted to a quenching process. X-ray diffraction results showed that all the nanostructures grew [0 0 0 1] oriented perpendicular to the substrate. The influence of the cooling process over the morphology and dimensions of the nanorods was studied by scanning electron microscopy. High-resolution transmission electron microscopy images of the quenched samples showed that the zinc oxide (ZnO) crystal surfaces exhibit a thin-layered coating surrounding the crystal with a high degree of defects, as confirmed by Raman spectroscopy results. Photodetectors made from these samples exhibited enhanced UV photoresponses when compared to the ones based on naturally cooled nanorods.     

Maskless selective growth of semi-polar (1 12¯ 2) GaN on Si (3 1 1) substrate by metal organic vapor phase epitaxy

Semi-polar (1 1 2¯ 2) GaN layers were selectively grown by metal organic chemical vapor phase epitaxy on patterned Si (3 1 1) substrates without SiO₂ amorphous mask. The (1 1 2¯ 2) GaN layers could be selectively grown only on Si (1 1 1) facets when the stripe mask width was narrower than 1 μm even without SiO₂. Inhomogeneous spatial distribution of donor bound exciton (DBE) peak in low-temperature cathodoluminescence (CL) spectra was explained by the difference of growth mode before and after the coalescence of stripes. It was found that the emission intensity related crystal defects is drastically decreased in case of selective growth without SiO₂ masks as compared to that obtained with SiO₂ masks.     

The effect of composition on UV-vis-NIR spectra of iron doped glasses in the systems Na2O/MgO/SiO2 and Na2O/MgO/Al2O3/SiO2

Glasses with the compositions xNa₂O · 10MgO · (90 − x)SiO₂, 10Na₂O · xMgO · (90 − x)SiO₂, 5Na₂O · 15MgO · xAl₂O₃ · (80 − x)SiO₂, xNa₂O · 10MgO · 10Al₂O₃ · (80 − x)SiO₂, 10Na₂O · 10MgO · xAl₂O₃ · (80 − x)SiO₂, 10Na₂O · 5MgO · 10Al₂O₃ · (80 − x)SiO₂ were melted and studied using UV-vis-NIR spectroscopy in the wavenumber range from 5000 to 30 000 cm⁻¹. At [Al₂O₃] > [Na₂O], the UV-cut off is strongly shifted to smaller wavenumbers and the NIR peak at around 10 000 cm⁻¹ attributed to Fe²⁺ in sixfold coordination gets narrower. Furthermore, the intensity of the NIR peak at 5500 cm⁻¹ increases. This is explained by the incorporation of iron in the respective glass structures.     

Characterization of the structure of calcium alumino-silicate and calcium fluoro-alumino-silicate glasses by magic angle spinning nuclear magnetic resonance (MAS-NMR)

Calcium aluminosilicate and calcium fluoro-aluminosilicate glasses have been characterized by ²⁹Si, ²⁷Al and ¹⁹F MAS-NMR. The two calcium aluminosilicate glasses examined were based on the composition 2SiO₂ · Al₂O₃ · 2CaO (ART1) and the mineral anorthite 2SiO₂ · Al₂O₃ · CaO (ART2). The observed chemical shifts for ²⁹Si and ²⁷Al agreed with previous studies. The fluorine containing glasses were based on 2SiO₂ · Al₂O₃ · (2−X)CaO · XCaF₂. The ²⁹Si chemical shift moved in a negative direction with increase fluorine content indicating a progressive reduction in the average number of non-bridging oxygens, NBO, attached to a silicon. The ²⁷Al spectra indicated the presence of four coordinate aluminium in the glasses with X=0.0-0.75, but aluminium was present in Al(IV), Al(V) and Al(VI) coordination states in the highest fluorine content glass with X=1.0. The ¹⁹F spectra indicated the presence of F-Ca(n) in low fluorine content glasses and both F-Ca(n) and Al-F-Ca(n) in high fluorine content glasses. We speculate here that the Al-F-Ca(n) species are oxyfluorides [AlO_xF_y]ⁿ⁻, where x=1-6, y=1-6 and n is the charge on the total complex when aluminium is in Al(IV), Al(V) and Al(VI) coordinate states. The reduction in the average number of NBO per silicon with increasing fluorine content is explained by fluorine converting Ca²⁺ to F-Ca(n).     

New evidence for tetrahedral triclusters in aluminosilicate glasses

The formation of thermodynamically stable 3/2-mullite (3 Al₂OAl₃·2 SiO₂) was investigated by scanning electron microscopy using reaction couples consisting of 2/1-mullite (2 Al₂O₃·1 SiO₂) plus SiO₂ glass, or Na₂O-SiO₂ glass, respectively. The mullite substrates were partially dissolved, thus leading to Al incorporation in the siliceous phases. In both reaction couples thin layers of stoichiometric 3/2-mullite form on the 2/1-mullite substrates. However, the major mullitization steps are different: The 2/1-mullite/SiO₂ reaction couple gives rise to 3/2-mullite crystallization within the bulk of the glass, whereas epitactic growth of c-axis orientated 3/2-mullite needles on the 2/1-mullite substrate was observed in the presence of Na₂O-SiO₂ glass. The differences in mullite nucleation were attributed to the existence or non-existence of tetrahedral triclusters in the as-reacted non-crystalline Al₂O₃-SiO₂ and Na₂O-Al₂O₃-SiO₂ phases, respectively. Triclusters of (Si,Al)O₄-tetrahedra in the Al₂O₃-SiO₂ glass may act as nuclei for 3/2-mullite crystallization in the bulk of the glass since these structural units also occur in mullite. In Na₂O-Al₂O₃-SiO₂ glasses triclusters are absent, and epitactical 3/2-mullite formation on the mullite substrate becomes more favorable energetically.     

Crystallization behavior and microstructure of powdered and bulk ZnO-Al2O3-SiO2 glass-ceramics

The crystallization behavior of glass with the composition: 55.6 mol% SiO₂, 22.8 mol% Al₂O₃, 17.7 mol% ZnO and 3.84 mol% of TiO₂ as nucleating agent and with different particle sizes has been studied by differential scanning calorimetry (DSC), X-ray diffraction (XRD) and tranmission electron microscopy (TEM). In glass powders two crystalline phases: zinc-aluminosilicate s.s. with high-quartz structure, Zn_x/2Al_xSi_3−xO₆, (x varies dependent on heat-treatment temperature) and gahnite are formed. The ratio of these phases depends on particle sizes. In bulk glass, however, gahnite is the sole crystalline phase. The composition of initially formed zinc-aluminosilicate s.s. was determined by Rietveld refinement of XRD patterns to be Zn_0.69Al_1.38Si_1.62O₆. With temperature increase, the amount of zinc-aluminosilicate s.s decreased with simultaneous reduce of zinc and aluminum incorporated in the structure. Eventually at 1423 K almost pure high-quartz structure was formed. The activation energies of zinc-aluminosilicate s.s. and gahnite crystallization were determined by non-isothermal method to be 510 ± 18 and 344 ± 17 kJ mol⁻¹, respectively. The latter value matches well with those cited in literature for crystal growth of gahnite in similar glasses. That is attributed to the fact that the high-quartz structure acts as a precursor for gahnite crystallization.     

Structure and thermal stability of (Zr0.6Al0.4)O1.8 thin film on strained SiGe layer

Zr_0.6Al_0.4O_1.8 dielectric films were deposited directly on strained SiGe substrates at room temperature by ultra-high vacuum electron-beam evaporation (UHV-EBE) and then annealed in N₂ under various temperatures. X-ray diffraction (XRD) reveals that the onset crystallization temperature of the Zr_0.6Al_0.4O_1.8 film is about 900 °C, 400 °C higher than that of pure ZrO₂. The amorphous Zr_0.6Al_0.4O_1.8 film with a physical thickness of ∼12 nm and an amorphous interfacial layer (IL) with a physical thickness of ∼3 nm have been observed by high-resolution transmission electron microscopy (HRTEM). In addition, it is demonstrated there is no undesirable amorphous phase separation during annealing at temperatures below and equal to 800 °C in the Zr_0.6Al_0.4O_1.8 film. The chemical composition of the Zr_0.6Al_0.4O_1.8 film has been studied using secondary ion mass spectroscopy (SIMS).     

Phase separation and crystallization in the system SiO2-Al2O3-P2O5-B2O3-Na2O glasses

The phase separation and crystallization behavior in the system (80 − X)SiO₂ · X(Al₂O₃ + P₂O₅) · 5B₂O₃ · 15Na₂O (mol%) glasses was investigated. Glasses with X = 20 and 30 phase separated into two phases, one of which is rich in Al₂O₃-P₂O₅-SiO₂ and forms a continuous phase. Glasses containing a larger amount of Al₂O₃-P₂O₅ (X = 40 and 50) readily crystallize and precipitates tridymite type AlPO₄ crystals. It is estimated that the phase separation occurs forming continuous Al₂O₃-P₂O₅-SiO₂ phase at first, and then tridymite type AlPO₄ crystals precipitate and grow in this phase. Highly transparent glass-ceramics comparable to glass can be successfully obtained by controlling heat treatment precisely. The crystal size and percent crystallinity of these transparent glass-ceramics are 20-30 nm and about 50%, respectively.     

Effect of pressure on the refractive index and relative density of the CaO · Al2O3 · 6SiO2 glass

The refractive index for glass of the CaO · Al₂O₃ · хSiO₂ system with х = 6 in the range of pressures up to 6.0 GPa was measured using a polarization-interference microscope and an apparatus with diamond anvils. The changes in the relative density characterizing the compressibility of glass were estimated from the measured refractive indices within the framework of the theory of photoelasticity. The data were compared with the previous data for glasses of the same system with х = 2 and 4. The most compressible of the three glasses in the range 2.0-6.0 GPa was the CaO · Al₂O₃ · 6SiO₂ glass. For glasses with х = 2, 4 and 6 we calculated the degrees of polymerization of silicon-aluminum-oxygen network, NBO/T (NBO - non-bridging oxygen), which are determined as the ratio of the number of gram-ions of non-bridging oxygen atoms to the total number of gram-ions of network formers. The structure-chemical parameter NBO/T was calculated with due regard for the formation of triclusters and highly coordinated aluminum. The degree of polymerization of the CaO · Al₂O₃ · хSiO₂ glasses increases with increasing х, which agrees with the change of their relative density under pressure.     

Microstructure and dielectric properties of La2O3 films prepared by ion beam assistant electron-beam evaporation

Ultrathin La₂O₃ gate dielectric films were prepared on Si substrate by ion assistant electron-beam evaporation. The growth processing, interfacial structure and electrical properties were investigated by various techniques. From XRD results, we found that the La₂O₃ films maintained the amorphous state up to a high annealing temperature of 900 °C for 5 min. From XPS results, we also discovered that the La atoms of the La₂O₃ films did not react with silicon substrate to form any La-compound at the interfacial layer. However, a SiO₂ interfacial layer was formed by the diffusion of O atoms of the La₂O₃ films to the silicon substrate. From the atomic force microscopy image, we disclosed that the surface of the amorphous La₂O₃ film was very flat. Moreover, the La₂O₃ film showed a dielectric constant of 15.5 at 1 MHz, and the leakage current density of the La₂O₃ film was 7.56 × 10⁻⁶ A/cm² at a gate bias voltage of 1 V.     

Orthophosphate nanostructures in SiO2-P2O5-CaO-Na2O-MgO bioactive glasses

Vibrational spectroscopy, ²⁹Si and ³¹P magic-angle spinning nuclear magnetic resonance spectroscopy and high resolution transmission electron microscopy were used to investigate structural aspects of SiO₂-P₂O₅-CaO-Na₂O-MgO glasses. The experimental results show that for the two compositions, 25.3SiO₂-10.9P₂O₅-32.6CaO-31.2MgO and 33.6SiO₂-6.40P₂O₅-19.0CaO-41.0MgO, phosphorous is present in a nano-crystalline form with interplanar distances in the 0.21-0.26 nm range. The two glasses develop a surface CaP-rich layer and the presence of any intermediate silica-rich layer was not detected. It was suggested that the phosphate nano-regions may play a key role in the initial stages of the bioactive process, acting as nucleation sites for the calcium phosphate-rich layer.     

Crystallization and dielectric properties of low temperature dielectrics containing Li2O filler

Crystallization and dielectric properties of typical low temperature co-fired ceramics (LTCC) consisting of calcium zinc aluminoborosilicate glass and Al₂O₃ filler were investigated by substituting the Al₂O₃ filler partially with Li₂O at the levels of 2-10 wt%. Depending on the content of Li₂O, densification was found significantly affected by early crystallization that resulted from the formation of unexpected crystalline phases including LiAlSiO₄, Ca₂SiO₄, LiAlO₂, and LiAlSi₃O₈. The effect of hindering sintering via earlier crystallization became enormous regardless of firing temperature when >5 wt% Li₂O substitution occurred. It was observed that the substitution of 2 wt% Li₂O for Al₂O₃ was beneficial in producing promising performance at the low temperature of 750 °C, which can be highlighted with k ∼ 8.7 and tan δ ∼ 0.009 at 1 MHz.     

Low-temperature/high-temperature AlN superlattice buffer layers for high-quality AlxGa1−xN on Si (1 1 1)

We present MOVPE-grown, high-quality Al_xGa_1−x N layers with Al content up to x=0.65 on Si (1 1 1) substrates. Crack-free layers with smooth surface and low defect density are obtained with optimized AlN-based seeding and buffer layers. High-temperature AlN seeding layers and (low temperature (LT)/high temperature (HT)) AlN-based superlattices (SLs) as buffer layers are efficient in reducing the dislocation density and in-plane residual strain. The crystalline quality of Al_xGa_1−xN was characterized by high-resolution X-ray diffraction (XRD). With optimized AlN-based seeding and SL buffer layers, best ω-FWHMs of the (0 0 0 2) reflection of 540 and 1400 arcsec for the (1 0 1¯ 0) reflection were achieved for a ∼1-μm-thick Al_0.1Ga_0.9N layer and 1010 and 1560 arcsec for the (0 0 0 2) and (1 0 1¯ 0) reflection of a ∼500-nm-thick Al_0.65Ga_0.35N layer. AFM and FE-SEM measurements were used to study the surface morphology and TEM cross-section measurements to determine the dislocation behaviour. With a high crystalline quality and good optical properties, Al_xGa_1−x N layers can be applied to grow electronic and optoelectronic device structures on silicon substrates in further investigations.