Ac conductivity of Ag-doped bulk,glassy As2S3

Measurements of the electrical conductivity of Ag-doped bulk As₂S₃ glasses have been made as functions of temperature, pressure, frequency and Ag doping level. A Debye-like loss peak was observed near 10⁴ Hz. The frequency of the loss peak is dependent on temperature, pressure and doping level, but these dependences are different from those of the dc conductivity. The ac loss is attributed to the Maxwell-Wagner losses characteristic of inhomogeneous materials. The materials are presumed to be inhomogeneous mixtures of As₂S₃ and Ag₂S. We have also searched unsuccessfully for ac conductance in several bulk chalcogenide glasses.     

Low temperature dielectric dispersion and electrical conductivity studies on Fe2O3 mixed lithium yttrium silicate glasses

Lithium yttrium silicate glasses mixed with different concentrations of Fe₂O₃ of the composition (40 ? x) Li₂O–10Y₂O₃–50SiO₂: x Fe₂O₃, with x = 0.3, 0.5, 0.8, 1.0, 1.2 and 1.5 (all in mol%) were synthesized. Electrical and dielectric properties including dielectric constant, ε′(ω), loss, tan δ, ac conductivity, σ_ac, impedance spectra as well as electric moduli, M(ω), over a wide continuous frequency range of 40 Hz to 10⁶ Hz and in the low temperature range 100 to 360 K were measured as a function of the concentration of Fe₂O₃. The dc conductivity is also evaluated in the temperature range 100 … 360 K. The temperature and frequency dispersions of dielectric constant as well as dielectric loss have been analyzed using space charge polarization model. The ac and dc conductivities have exhibited increasing trend with increasing Fe₂O₃ content beyond 0.5 mol%, whereas the activation energy for the conductivity demonstrated decreasing tendency in this dopant concentration range. Both quantum mechanical tunneling (QMT) and correlated barrier hopping models (CBH) were used for clarification of ac conductivity origin and the corresponding analysis has indicated that CBH model is more appropriate for this glass system. For the better understanding of relaxation dynamics of the electrical properties we have drawn the scaling plots for ac conductivity and also electric moduli. The plots indicated that the relaxation dynamics is independent on temperature but depends on concentration of Fe₂O₃. The dc conductivity is analyzed using small polaron hoping model. The increase of conductivity with the concentration of Fe₂O₃ beyond 0.5 mol% is explained in terms of variations in the redox ratio of iron ions in the glass network. The results were further analyzed quantitatively with the support of experimental data from IR, optical absorption and ESR spectral studies. The overall analysis has indicated that Li₂O–Y₂O₃–SiO₂ glasses containing more than 0.5 mol% of Fe₂O₃ are more suitable for achieving good electrical conductivity in these glasses.     

The role of coordination and valance states of tungsten ions on some physical properties of Li2O–Al2O3–ZrO2–SiO2 glass system

A series of Li₂O–Al₂O₃–ZrO₂–SiO₂ glasses doped with different concentrations of WO₃ (0 to 5.0 mol.%) have been synthesized. Differential thermal analysis of the samples indicated increasing glass forming ability with the increasing concentration of WO₃ in the glass matrix. A variety of spectroscopic (optical absorption, IR, Raman and ESR) and dielectric properties (over a range of frequency and temperature) of these glasses have been investigated. The optical absorption and ESR spectral studies have pointed out that a part of tungsten ions do exist in W⁵⁺ state in addition to W⁶⁺ state especially in the samples containing low concentration of WO₃. The IR and Raman spectral studies have suggested that there is a decreasing degree of disorder in the glass network with increase in the concentration of WO₃. The values of dielectric parameters viz., dielectric constant, loss and ac conductivity at any frequency and temperature are observed to decrease as the concentration of WO₃ is increased. Such changes have been attributed to decrease of redox ratio or decreasing proportions of W⁵⁺ ions that act as modifiers in the glass network. The quantitative analysis of the results of ac conductivity and dielectric properties have indicated an increase in the insulating character of the glasses with the concentration of WO₃; this is attributed to the presence of tungsten ions largely in W⁶⁺ ions that participate in the glass network forming with WO₄ structural units.     

Electronic relaxation in zinc iron phosphate glasses

The electrical and dielectric properties of 10ZnO-30Fe₂O₃-60P₂O₅ (mol%) glasses, melted at different temperatures were measured by impedance spectroscopy in the frequency range from 0.01 Hz to 3 MHz and over the temperature range from 303 to 473 K. It was shown that the dc conductivity strongly depends on the Fe(II)/[Fe(II) + Fe(III)] ratio. With increasing Fe(II) ion content from 17% to 37% in these glasses, the dc conductivity increases. Procedure of scaling conductivity data measured at various temperatures into a single master curve is given. The conductivity of the present glasses is made of conduction and conduction-related polarization of the polaron hopping between Fe(II) and Fe(III), both governed by the same relaxation time, τ. The high frequency dispersion in electrical conductivity arises from the distribution in τ caused by the disordered glass structure. The evolution of the complex permittivity as a function of frequency and temperature was investigated. At low frequency the dispersion was investigated in terms of dielectric loss. The thermal activated relaxation mechanism dominates the observed relaxation behavior. The relationship between relaxation parameters and electrical conductivity indicates the electronic conductivity controlled by polaron hopping between iron ions.     

Ionic conductivity of Li2O-BaO-Bi2O3 glasses

Dc and ac conductivities of Li₂O-BaO-Bi₂O₃ glasses have been studied in a temperature range of 263-523 K and a frequency range of 10 Hz-2 MHz and have been compared with those of binary Li₂O-Bi₂O₃ glasses. The frequency dependent conductivity has been studied employing both the modulus and conductivity formalisms. We have observed small changes in the dc conductivity and its activation energy from those of the binary glass when content of BaO is small. However we have observed noticeable changes in the conductivity and the activation energy when BaO content is large. The significant changes in the values of the non-exponential parameter and the power-law exponent of the ac electrical properties have been observed due to introduction of BaO in the lithium bismuthate glasses. The existing relation between the power-law exponent and the non-exponential parameter was also violated in the present glass compositions.     

Medium range order and optical properties of As2S3 glass

Low frequency Raman scattering and optical absorption edge were measured for As₂S₃ glasses quenched at temperature in the supercooling region of the glasses. It was found that both the Raman spectrum and the optical absorption edge shift to the lower energy side with the rise of the quenching temperature. The effects were interpreted in terms of the order of the arrangements of the layer-like clusters, which become more random as the quenching temperature goes higher.     

Incommensurate phase properties of TlGaSe2 layered crystals

The frequency and time dependence of the ac conductivity were measured within incommensurate phase in the frequency range 10¹‐10⁷ Hz and analyzed. The electrical conductivity decreases with decreasing temperature, then saturates in mentioned temperature interval. The ac conductivity is proportional to w^s. The value f s decreases with increasing temperature which suggests hopping conduction mechanism. The time dependence of the conductivity exhibited exponential decay. It shows two conductivity relaxations in mentioned temperature interval. Moreover, the characteristic relaxation times decrease with decreasing annealing temperature. The two different relaxation times refer to two different incommensurate ordering in mentioned temperature interval. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Ac conductivity and dielectric relaxation in ionically conducting soda-lime-silicate glasses

The frequency dependent conductivity and dielectric relaxation of alkali ions in some soda-lime-silicate (Na₂O-CaO-SiO₂) glasses are investigated over a frequency range from 50 Hz to 1 MHz and in a temperature range from room temperature to 603 K by using alternating current impedance spectroscopy. The conductivity isotherms show a transition from frequency independent dc region to dispersive region where the conductivity continuously increases with increasing frequency. The electric modulus representation has been used to provide comparative analysis of the ion transport properties in these glasses. The scaling behavior of imaginary part of electric modulus indicates that all dynamical processes occurring at different frequencies give the same activation energy.     

Structural, electrical, and optical properties of As2S3-Cu6PS5I nanocomposites

As₂S₃-Cu₆PS₅I nanocomposites are prepared by incorporation of nanocrystals of Cu₆PS₅I superionic conductor in As₂S₃ glass matrix. Their structural studies by scanning electronic microscopy are performed and the electrical conductivity of the nanocomposites is investigated. The temperature dependence of the nanocomposite optical absorption edge is studied; a non-Urbach behaviour of the absorption edge is revealed. Influence of different types of disordering on the optical absorption edge is studied.     

Origin of blue and green colouration in sulphur containing alkali borate glasses

Simple binary sodium and potassium borate glasses containing sulphur were prepared. Depending on the composition of the glass and the quantity of sulphur added the glasses produced were blue, green or yellow. The absorption spectra of these glasses were measured in the range of 300–700 nm.The blue colour is characterized by an absorption band at 585 nm which is attributed to S₃^?.The green colour is characterized by two absorption bands; the band at 585 nm observed in the spectra of the blue glasses and a more intense band at 390 nm. The latter is attributed to S₂^? and the green colouration to the presence of both S₂^? and S₃^? where the S₂^? state predominates.     

Electrical properties of copper phosphate glasses I. DC electrical behaviour

The ac and dc electrical properties of the P₂O₅BaOCuO glass system have been measured.TSPC and TSDC experiments and dc conductivity as a function of time indicate the predominantly electronic character of these glasses. The conduction process can be basically explained by a polaron hopping model in an adiabatic regime. Conductivity values which depend on the glass microstructure and switching phenomena are observed. The filamentary-feature of this process suggests a Poole-Frenkel mechanism.A Debye dielectric relaxation non-simple process is deduced from the frequency and temperature dependence of loss tangent and dielectric constant. The activation energies agree with those determined from dc measurements, suggesting a unique electronic hopping conduction mechanism in both regimes.The ac and dc electrical properties are strongly affected by the glass composition and essentially by the redox Cu⁺/Cu_t ratio.A conduction model accounting for ac and dc behaviour is finally proposed.     

Electrical properties of copper phosphate glasses II. Dielectric properties

The ac and dc electrical properties of the P₂O₅BaOCuO glass system have been measured.TSPC and TSDC experiments and dc conductivity as a function of time indicate the predominantly electronic character of these glasses. The conduction process can be basically explained by a polaron hopping model in an adiabatic regime. Conductivity values which depend on the glass microstructure and switching phenomena are observed. The filamentary-feature of this process suggests a Poole-Frenkel mechanism.A Debye dielectric relaxation non-simple process is deduced from the frequency and temperature dependence of loss tangent and dielectric constant. The activation energies agree with those determinated from dc measurements, suggesting a unique electronic hopping conduction mechanism in both regimes.The ac and dc electrical properties are strongly affected by the glass composition and essentially by the redox Cu⁺/Cu_t ratio.A conduction model accounting for ac and dc behaviour is finally proposed.     

Electrical and dielectric properties of MnF2–ZnF2–NaPO3 glasses

Direct electrical conductivity and dependencies of complex electrical modulus vs. temperature and frequency have been measured on glasses from the MnF₂–ZnF₂–NaPO₃ system. These glasses are sensitive to atmospheric humidity and as a consequence, the electrical conductivity increases up to temperature of 50 °C. A hydrated layer is created by the effect of water and leads to the significant increase of the electrical conductivity in the case of 0MnF₂–20ZnF₂–80NaPO₃ glass. This behavior is governed by Arrhenius relation where the values of activation energy are increasing and values of the electrical conductivity are decreasing with the amount of MnF₂. Dielectric measurements show that a heterogeneous phase is formed in the bulk of glasses. This may be seen when plotting complex electrical modulus in the complex plane. The records made by the light microscope confirmed the occurrence of the other phase in the bulk of glasses.     

Influence of temperature on the microcrystalline structure of thermally evaporated Sb2S3 thin films

Thin films of antimony trisulfide (Sb₂S₃) were prepared by thermal evaporation under vacuum (p=5×10^–5 torr) on glass substrates maintained at various temperatures between 293 K and 523 K. Their microstructural properties have obtained by transmission electron microscopy (TEM). The electron diffraction analysis showed the occurrence of amorphous to polycrystalline transition in the films deposited at higher temperature of substrates (523 K). The polycrystalline thin films were found to have an orthorhombic structure. The interplanar distances and unit‐cell parameters were determined by high‐resolution transmission electron microscopy (HRTEM) and compared with the standard values for Sb₂S₃. The surface morphology of Sb₂S₃ thin films was investigated by scanning electron microscopy (SEM). The optical transmission spectra at normal incidence of Sb₂S₃ thin films have been measured in the spectral range of 400–1400 nm. The analysis of the absorption spectra revealed indirect energy gaps, characterizing of amorphous films, while the polycrystalline films exhibited direct energy gap. From the photon energy dependence of absorption coefficient, the optical band gap energy, E_g, were calculated for each thin films. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Temperature Dependence of the Absorption Spectra and Optical Parameters in TGS and Cu2+-Doped TGS Crystals

The effect of temperature on the optical absorption spectra and optical parameters is investigated for pure TGS and TGS doped with Cu²⁺ ions. Absorption measurements cover the range from room temperature to about 355 K in the energy range 3-5.5 eV. The temperature dependence of the band gap E_g(T) reveals an anomaly at the phase transition temperature for both pure and Cu²⁺-doped TGS crystals. In the region of the absorption edge the absorption coefficient is found to display Urbach-rule behaviour. The characteristic Urbach parameters are determined and their temperature dependence is investigated.     

Effect of Doping and Irradiation on Optical Parameters of Triglycine Sulphate Single Crystals

Crystals of triglycine sulphate (TGS) doped with orthonitroaniline (ONA) irradiated with different doses of gamma-radiation were used to investigate gamma-radiation effect on electrical and optical parameters. The absorption coefficient and the reflectance were measured and hence the extinction coefficient, the optical refractive index and the dielectric constants (e_r′, e_r″) of unirradiated and irradiated TGS crystals were calculated. Values of the allowed indirect optical energy gap E_g^opt. of TGS doped with ONA were calculated as a function of gamma-dose. Value of E_g^opt. decreases from 4.72 eV to 4.25 eV with increasing gamma-doses from 0 up to 3 Mrad. The values of the static dielectric constant e_r(0) and the effective electrical conductivity sigma₀ at room temperature and their dependence on gamma-dose were also calculated.     

Urbach absorption edge and disordering processes in As2S3 thin films

The temperature studies of transmission spectra for as-deposited and annealed amorphous As₂S₃ thin films are carried out. The optical absorption spectra in the range of their exponential behaviour are analysed, and the dispersion dependences of refractive index as well as their temperature variation are investigated. The Urbach behaviour of optical absorption edge is revealed, the Urbach absorption edge parameters are determined, and their temperature dependences are studied. The effect of different type of disordering on the optical absorption processes in As₂S₃ thin films is studied. A comparative analysis of Urbach absorption edge parameters of As₂S₃ bulk glasses and thin films is performed.     

Temperature‐tuned band gap energy and oscillator parameters of Tl2InGaSe4 semiconducting layered single crystals

The optical properties of Tl₂InGaSe₄ layered single crystals have been studied through the transmission and reflection measurements in the wavelength range of 500‐1100 nm. The analysis of room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 1.86 and 2.05 eV, respectively. Transmission measurements carried out in the temperature range of 10‐300 K revealed that the rate of change of the indirect band gap with temperature is γ = – 4.4 × 10^‐4 eV/K. The absolute zero value of the band gap energy was obtained as E_gi(0) = 1.95 eV. The dispersion of the refractive index is discussed in terms of the single oscillator model. The refractive index dispersion parameters: oscillator wavelength and strength were found to be 2.53 × 10^–7 m and 9.64 × 10¹³ m^–2, respectively. (© 2009 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Preparation and characterization of telluride glasses

Chalcogenide bulk glasses Ge₂₀Se_80?xTe_x for x ∈ (0, 10) have been prepared by systematic replacement of Se by Te. Selected glasses have been doped with Er and Pr, and all systems have been characterized by transmission spectroscopy, measurements of dc electrical conductivity and low-temperature photoluminescence. Absorption coefficient has been derived from measured transmittance and estimated reflectance. Both absorption and low-temperature photoluminescence spectra reveal shifts of absorption edge and/or dominant luminescence band to longer wavelength due to Te → Se substitution. Arrhenius plots of dc electrical conductivity, in the temperature range 300–450 K, are characterized by activation energies roughly equal to the half of the optical gap. Arrhenius plots for temperatures below 300 K yield much lower activation energies. The dominant low-temperature luminescence band centered at about half the band gap energy starts to quench above 200 K and a new band appears at 900 nm. The band at 900 nm, due to band to band transitions, overwhelms the spectra at room temperature. Systems doped with Er exhibit a strong luminescence due to ⁴I_13/2 → I_15/2 transition of Er³⁺ ion at 1539 nm, and Pr doped samples exhibit a relatively weak luminescence peak at 1590 nm, which we tentatively assign to ³F₃ → ³H₄ transition of Pr³⁺ ion.