Dual-shunt branch circuit and harmonic suppressed device application

The morphological manipulation, structural characterization, and optical properties of different CdSe nanocrystals were reported. Several different CdSe nanostructures, including nanowires, tetrapod crystals, and nanoparticles were grown by varying the volume ratio of triethylenetetraamine (TETA) and water (WA) in their mixed solution. By manipulating the growth driving force (i.e., the degree of supersaturation) and kinetics of the process (i.e., growth rate), the morphology and crystal structure of CdSe nanocrystals can be tailored. Growth driving force changed their morphology from nanowires to tetrapod structures and from the latter structure to nanoparticles. Moreover, kinetics of the process altered their crystal structure from wurtzite to zinc blende. The optical property of CdSe nanocrystals was investigated using UV-vis spectroscopy. The absorption edge of CdSe nanostructures showed a blue shift. CdSe nanocrystals prepared under optimized conditions showed good microstructural and optical properties for solar cell application.     

Preparation of pure CdSe nanocrystals through mechanical alloying

Pure CdSe nanocrystals have been successfully synthesized by mechanical alloying Cd and Se elemental powders. XRD results show that pure CdSe compound in wurtzite structure has been fabricated after mechanical alloying the elemental powders for 130 min. All the diffraction peaks from elemental Cd and Se disappeared completely in those XRD patterns of as-milled CdSe nanocrystals for more than 3 h. When the mechanical alloying process was carried out for 40 h, typical zinc blende structure diffraction mode was exhibited in the XRD pattern. Structural evolution of CdSe nanocrystal with ball milling time has been discussed in detail. A phase transformation from wurtzite to zinc blende structure took place when the mechanical alloying process prolonged to 40 h. HRTEM images of the individual as-milled CdSe nanocrystals confirmed such phase transformation. The grain size of the as-milled CdSe nanocrystals ranges from 2 to 30 nm, with majority being distributed within the range from 2 to 8 nm.     

The temporal evolution of the structure and luminescence properties of CdSe semiconductor quantum dots grown at low temperatures

Mono-dispersed CdSe quantum dots have been prepared by water based route using 2-mercaptoethanol at low temperatures. The structures of the CdSe nanocrystals were investigated by X-ray diffraction (XRD), transmission electron microscopy (TEM) and high-resolution transmission electron microscopy (HRTEM). The XRD pattern showed that the prepared CdSe has a cubic phase with zinc blende structure. The temporal evolution of the absorption and photoluminescence spectra was used to follow the reaction process and to characterize the optical properties of the prepared CdSe quantum dots. The results exhibited clear exciton peaks in the absorption spectra. The influence of the temperature and/or time of reaction on the properties of the CdSe nanocrystals were investigated. It is found that the size of CdSe nanoparticles increases, as the reaction temperature and/or time are increased. The results showed that the Stokes shift between photoluminescence emission peak and absorption peaks is increased with the increase of the reaction temperature.     

Growth of Pure Zinc Blende GaAs Nanowires: Effect of Size and Density of Au Nanoparticles

Pure zinc blende GaAs nanowires were grown by metal organic chemical vapor deposition on GaAs（111）B substrates via Au catalyzed vapor-liquid-solid mechanism. The diameter, size distribution, and density of Au particles can be changed by varying the Au film thickness. We find that the grown nanowires are of rod-like shapes and pure zinc blende structure; moreover, the growth rate depends on the density of Au particles and it is independent of its diameters. It can be concluded that the nanowire was grown with main contributions from the direct impingement of vapor species onto the Au-Ga droplets and contributions from adatom diffusion can be negligible. The results indicate that the droplet acts as a catalyst rather than an adatom collector.     

Why does wurtzite form in nanowires of III-V zinc blende semiconductors?

We develop a nucleation-based model to explain the formation of the wurtzite phase during the catalyzed growth of freestanding nanowires of zinc blende semiconductors. We show that in vapor-liquid-solid nanowire growth, nucleation generally occurs preferentially at the triple phase line. This entails major differences between zinc blende and wurtzite nuclei. Depending on the pertinent interface energies, wurtzite nucleation is favored at high liquid supersaturation. This explains our systematic observation of zinc blende during early growth of gold-catalyzed GaAs nanowires.     

Structural evolution of self‐assisted GaAs nanowires grown on Si(111)

GaAs nanowires are grown on Si(111) by self‐assisted molecular beam epitaxy, and the ratio between wurtzite and zinc‐blende phases is determined as function of nanowire length using asymmetric X‐ray diffraction. We show that under the applied growth conditions, nanowires grow in both phases during the initial stage of growth, whereas the zinc‐blende content increases with growth time and dominates in long nanowires. Compared to the zinc‐blende units, the vertical lattice parameter of the wurtzite segments is 0.7% larger, as measured by the positions of respective diffraction peaks. (© 2011 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)     

Polytypism in GaAs nanowires: determination of the interplanar spacing of wurtzite GaAs by X‐ray diffraction

In GaAs nanowires grown along the cubic [111]_c direction, zinc blende and wurtzite arrangements have been observed in their stacking sequence, since the energetic barriers for nucleation are typically of similar order of magnitude. It is known that the interplanar spacing of the (111)_c Ga (or As) planes in the zinc blende polytype varies slightly from the wurtzite polytype. However, different values have been reported in the literature. Here, the ratio of the interplanar spacing of these polytypes is extracted based on X‐ray diffraction measurements for thin GaAs nanowires with a mean diameter of 18–25 nm. The measurements are performed with a nano‐focused beam which facilitates the separation of the scattering of nanowires and of parasitic growth. The interplanar spacing of the (111)_c Ga (or As) planes in the wurtzite arrangement in GaAs nanowires is observed to be 0.66% ± 0.02% larger than in the zinc blende arrangement.     

Phonon thermal transport in InAs nanowires with different size and growth directions

We investigate the phonon thermal transport properties in InAs nanowires with different size and growth directions by using nonequilibrium molecular dynamics methods. The results show a remarkable anisotropy for the thermal conductivity in InAs nanowire. It is found that the thermal conductivity along [110] growth direction is about three times larger than that along [100] or [111] direction. With the increase of temperature, the thermal conductivity along [110] direction decreases significantly. However, the thermal conductivity along other two directions is not sensitive to temperature. Moreover, we find a crossover from ballistic to ballistic-diffusive thermal transport for a certain length of InAs nanowire. A brief physical analysis of these results is given. It is suggested that the anisotropy of thermal conductivity is common for nanowires with zinc blende structures.     

CdSe纳米粒子负载的TiO2纳米带复合材料制备及其可见光催化性能

采用水热法制备了CdSe 纳米粒子负载的锐钛矿型TiO2纳米带复合材料,并对产物的晶体结构、形貌尺寸、CdSe负载量及其可见光催化性能进行了测试.结果表明,产物中CdSe纳米粒子以闪锌矿型面心立方结构负载在TiO2纳米带表面,负载量可控;虽然CdSe纳米粒子的负载降低了TiO2纳米带比表面积,但是显著增强了产物可见光吸...     

不同取向下单晶铁纳米线拉伸行为的模拟研究

本文利用分子动力学模拟的方法研究了不同取向、尺寸和温度因素对单晶体心立方铁纳米线的拉伸变形行为的影响.铁纳米线轴向初始取向分别为<001>、<110>、<111>、<102>、<112>,模拟了不同温度(10～700 K)和不同尺寸范围(1.5～5 nm)下的变形机制.研究结果表明取向、尺寸和温度会显著影响单晶体心立方铁纳米线的拉伸变形行为.分子动力学模拟结果表明,直径为2 nm的<001>铁纳米线在300 K的拉伸载荷下,主要通过孪晶的模式发生变形,最后拉伸取向转变为<110>.而在700 K下,<001>铁纳米线的拉伸变形模式由滑移主导.不同初始取向在不同温度和尺寸下其变形机制截然不同,这导致了铁纳米线不同的力学性能.本文系统性地研究了在不同取向下的铁纳米线变形机制随尺寸和温度变化发生的转变.     

Self-consistent model of nanowire growth and crystal structure with regard to the adatom diffusion

A self-consistent model of growth and structure of semiconductor nanowires is proposed. The crystal phase of group III–V semiconductor nanowires is studied. The critical radius of the transition from the hexagonal wurtzite (WZ) structure to the cubic structure of zinc blende (ZB) type is calculated as a function of parameters of the system of materials and the gaseous medium supersaturation. The model presented here is applicable to both gas-phase and molecular beam epitaxies and allows one to calculate the probability of formation of the WZ and ZB phases under various deposition conditions.     

The structure and photoluminescence properties of TiO<Subscript>2</Subscript>-coated ZnS nanowires

The structure and photoluminescence properties of TiO₂-coated ZnS nanowires were investigated. ZnS nanowires were synthesized by thermal evaporation of ZnS powder and then coated with TiO₂ by using the metal organic chemical vapor deposition (MOCVD) technique. We performed scanning electron microscopy, transmission electron microscopy (TEM), X-ray diffraction (XRD), energy-dispersive X-ray spectroscopy, and photoluminescence (PL) spectroscopy to characterize the as-synthesized and TiO₂-coated ZnS nanowires. TEM and XRD analyses revealed that the ZnS core and the TiO₂ coatings had crystalline zinc blende and crystalline anatase structures, respectively. PL measurement at room temperature showed that the as-synthesized ZnS nanowires had two emissions: a blue emission centered in the range from 430 to 440 nm and a green emission at around 515 nm. The green emission was found to be dominant in the ZnS nanowires coated with TiO₂ by MOCVD at 350°C for one or more hours, while the blue emission was dominant in the as-synthesized ZnS nanowires. Also the mechanisms of the emissions were discussed.     

Large scale synthesis of cadmium selenide nanowires using template synthesis technique and their characterization

We report the fabrication, and structural and optical characterization of CdSe nanowires. Large scale uniform nanowires with length 40 micron and diameter 100 nm were grown using the simple chemical reaction technique. Morphological study of CdSe nanowires was done using scanning electron microscopy (SEM). X-ray diffraction (XRD), and Raman studies show the crystalline structure of CdSe nanowires. Energy dispersive X-ray fluorescence (EDXRF) technique was used to study the composition of CdSe nanowires. UV–Vis absorption studies show a blue shift of 0.26 eV in the optical band gap of CdSe nanowires.     

In-situ mechanical characterization of wurtzite InAs nanowires

High aspect ratio vertical InAs nanowires were mechanically characterized in a scanning electron microscope equipped with two micromanipulators. One, equipped with a calibrated atomic force microscope probe, was used for in-situ static bending of single nanowires along the 〈11–20〉 crystallographic direction. The other one was equipped with a tungsten tip for dynamic resonance excitation of the same nanowires. This setup enabled a direct comparison between the two techniques. The crystal structure was analyzed using transmission electron microscopy, and for InAs nanowires with a hexagonal wutzite crystal structure, the bending modulus value was found to BM=43.5 GPa. This value is significantly lower than previously reported for both cubic zinc blende InAs bulk crystals and InAs nanowires. Besides, due to their high resonance quality factor (Q>1200), the wurtzite InAs nanowires are shown to be a promising candidate for sub-femtogram mass detectors.     

Preparation and properties of zinc blende and orthorhombic SnS films by chemical bath deposition

SnS (stannous sulfide) films were prepared by chemical bath deposition in which a novel chelating reagent ammonium citrate was used. The film has a zinc blende structure or an orthorhombic structure which is determined by the pH value and the temperature of the deposition solution. The reason for this result is considered to be that SnS films prepared under different conditions have different deposition mechanisms (ion-by-ion mechanism for the zinc blende structured SnS and hydroxide cluster mechanism for the orthorhombic structured SnS). The prepared SnS films are homogeneous and well adhered. SEM images show that the SnS films with different structures have different surface morphologies. Electrical test shows that the resistivity of the films is as low as 420 Ω cm and 3300 Ω cm for orthorhombic and zinc blende SnS films, respectively, which are much lower than the ever reported values. Persistent photoconductivity (PPC) phenomena are observed for both the films with zinc blende and orthorhombic structures by photo-current responses measurement. The optical bandgaps of the SnS films are determined to be 1.75 eV and 1.15 eV for zinc blende structure and orthorhombic structure, respectively.     

Stacking-faults-free zinc blende GaAs/AlGaAs axial heterostructure nanowires during vapor-liquid-solid growth

Pure zinc blende structure GaAs/AlGaAs axial heterostructure nanowires (NWs) are grown by metal organic chemical vapor deposition on GaAs(111) B substrates using Au-catalyzed vapor-liquid-solid mechanism.Al adatom enhances the influence of diameters on NWs growth rate.NWs are grown mainly through the contributions from the direct impingement of the precursors onto the alloy droplets and not so much from adatom diffusion.The results indicate that the droplet acts as a catalyst rather than an adatom collector.     

Selective synthesis of clinoatacamite Cu2(OH)3Cl and tenorite CuO nanoparticles by pH control

To investigate the shell deposited kinetics, CdSe quantum dots (QDs) and nanorods (NRs) with a maximum length of 17 nm were fabricated via organic synthesis routes. CdSe with a hexagonal crystal structure (wurtzite) favors epitaxial growth on the {002} surfaces when well-controlled conditions were used. The morphologies and sizes of CdSe samples depended strongly on chemicals and temperature. In the case of 320 °C, CdSe NRs with adjusted length of 7–17 nm were obtained from trioctylphosphine oxide (TOPO) and tetradecylphosphonic acid (TDPA). In contrast, short CdSe NRs (less than 10 nm) were created from octadecylphosphonic acid (ODPA) and trioctylamine (TOA). Spherical CdSe QDs were further fabricated using stearic acid (SA) and TOPO at 300 °C. CdSe cores were coated with Cd_0.5Zn_0.5S and CdTe shells. Anisotropic growth occurred during shell deposition because CdS shells grown preferentially on the {001} facet of the CdSe core. In the case of CdSe core prepared from TOPO and TDPA, CdSe/Cd_0.5Zn_0.5S core/shell samples prepared from long CdSe NRs (more than 10 nm) revealed a peanut morphology while the core/shell samples created from short ones (less than 10 nm) exhibited a spherical morphology. All of the CdSe/Cd_0.5Zn_0.5S core/shell samples revealed a similar length to that of the CdSe cores. This phenomenon was also observed for the core/shell samples fabricated using CdSe NRs prepared by ODPA and TOA. This is ascribed to the well-developed crystal structure of CdSe NRs fabricated using an organic synthesis at high temperature. In contrast, this anisotropic growth did not occur when spherical CdSe QDs prepared from SA and TOPO and the shell (Cd_0.5Zn_0.5S) coating carried out using SA and TOA. To indicate the shell depositing process, CdSe NRs fabricated using TDPA and TOPO were coated with a CdTe shell. CdTe monomers were deposited on the middle and tip parts of the CdSe NRs to form a tetrapod-like morphology at 220 °C. This is ascribed to the large difference of structure of CdSe (hexagonal) and CdTe (zinc blende).     

Synthesis and properties of CdSe Quantum Dot sensitized ZnO nanocomposites

In this work, zinc oxide nanocrystals with an average particle size of 13–22 nm are readily synthesized in aqueous medium by the wet synthesis method. Different sized nanocrystals obtained with change in calcination temperature are characterized by PL photoluminescence (PL) and UV–vis absorption spectroscopies, X-Ray Diffraction (XRD) and Scanning Electron Microscopy (SEM). The average crystal size of the as prepared ZnO nanopowder is determined by XRD and was found to be in good agreement with the UV–vis absorption analysis. The quality of different ZnO nanopowders is confirmed by XRD spectra. On the basis of different characterizations, ZnO calcined for 1 h (due to its large size and less agglomeration) is chosen for synthesis of ZnO–CdSe nanocomposites with variable sized CdSe QD's (Quantum Dots). Nano-composites are synthesized using bifunctional linker molecule Mercaptopropionic Acid (MPA), and by directly adsorbing CdSe QD's over the surface of ZnO nanocrystals. The difference in charge transfer mechanism in ZnO–CdSe nanocomposites due to different crystallite size of CdSe QD's is studied. Higher crystallinity of ZnO–CdSe nanocomposites can be determined from XRD characterization. Size and mode of attachment in various ZnO–CdSe nanocomposites are determined by SEM studies.     

Resonance Raman spectroscopic study of shape‐induced phase transition in CdSe nanoclusters

We report an observation of shape‐induced phase transition from wurtzite to zinc blende phase of encapsulated CdSe nanoclusters in mesoporous silica. Presence of both the phases is also observed in the as‐grown sample before encapsulation. Role of interfacial energy in the energetic mesopores, as the possible origin of phase transition, is thus ruled out, as the samples are encapsulated subsequent to their synthesis in the soft chemistry route. Electron–phonon coupling in the resonant Raman spectroscopic studies, using different energies for clusters of different phase and shape, thereby confirms the presence of both the wurtzite and the zinc blende phases. Transmission electron microscopic studies are used for the direct evidence of the shape‐induced solid–solid phase transition between two crystalline phases, for the first time. Small fluctuation of energies, in the form of shape, during its growth may be the driving force for the observed phenomenon, as the surface energy of both the phases stabilizes to the same value. Thus, finally, specific shapes can be used as one of the ways to differentiate the resulting phases. Copyright © 2014 John Wiley & Sons, Ltd.     

Impurity-stabilized zinc-blende phase of wurtzite compounds

We propose here a new approach to stabilizing the cubic zinc blende phase of semiconductors that are usually more stable in the hexagonal wurtzite phase. We show that this can be done by taking advantage of the valence and conduction band offsets between the cubic and the hexagonal phases. Due to this band offset, it will cost less energy to insert electrons by shallow donors, or insert holes by 3d acceptors in the zinc blende structure, thus stabilizing the cubic phase.