Spin-transfer torques in antiferromagnetic metals from first principles

In spite of the absence of a macroscopic magnetic moment, an antiferromagnet is spin-polarized on an atomic scale. The electric current passing through a conducting antiferromagnet is polarized as well, leading to spin-transfer torques when the order parameter is textured, such as in antiferromagnetic noncollinear spin valves and domain walls. We report a first principles study on the electronic transport properties of antiferromagnetic systems. The current-induced spin torques acting on the magnetic moments are comparable with those in conventional ferromagnetic materials, leading to measurable angular resistances and current-induced magnetization dynamics. In contrast to ferromagnets, spin torques in antiferromagnets are very nonlocal. The torques acting far away from the center of an antiferromagnetic domain wall should facilitate current-induced domain wall motion.     

自旋阀中电流诱导磁化翻转行为的研究

通过实验研究了一种特殊的反对称自旋阀结构．研究发现,随着外加磁场的增大,该结构纳米器件表现出了一种由“逆CIMS”向“正常CIMS”的转变．这种现象是因为：该反对称自旋阀在不同的外加磁场下有不同的磁化取向,因而引起不同的CIMS行为． 关键词： CPP ESPV CIMS     

Detection of current-induced spins by ferromagnetic contacts

Detection of current-induced spin accumulation via ferromagnetic contacts is discussed. Onsager's relations forbid that in a two-probe configuration, spins excited by currents in time-reversal symmetric systems can be detected by switching the magnetization of a ferromangetic detector contact. Nevertheless, current-induced spins can be transferred as a torque to a contact magnetization and can affect the charge currents in many-terminal configurations. We demonstrate the general concepts by solving the microscopic transport equations for the diffuse Rashba system with magnetic contacts.     

Current-induced spin injection and surface torque in ferromagnetic metallic junctions

The joint influence of two current-induced effects, namely, longitudinal nonequilibrium spin injection and surface torque, on spin-valve-type ferromagnetic metallic junctions is considered theoretically. The current flows normally to layer boundaries. The analysis is based on solving a system of coupled equations of motion for mobile electron and lattice magnetizations. The boundary conditions for the equations of motion are derived from the continuity condition for the total magnetization flux in these subsystems. A dispersion relation is derived for spin wave fluctuations depending on the current through the junction. The fluctuations become unstable at currents exceeding some threshold value (usually, 10⁶?3 × 10⁷ A/cm²). The joint action of longitudinal spin injection and torque lowers the instability threshold. Current-induced spin injection decreases spin wave frequencies near the threshold and can strengthen magnetization pinning at the injecting contact.     

Switching effect in ferromagnetic metallic junctions

Mechanisms are determined for homogeneous current-induced switching in ferromagnetic metallic junctions of the spin-valve type. The spin flux is perpendicular to the junction surface and is directed from the pinned layer to the free one. The switching is due to the joint action of two mechanisms: (i) current-induced surface torque and (ii) current-induced injection of nonequilibrium longitudinal spins into the free-layer bulk. Both mechanisms lead to the instability and reorientation of magnetization; however, only the injection mechanism can stabilize the switching.     

Non-collinear magnetoelectronics

The electron transport properties of hybrid ferromagnetic|$|$normal metal structures such as multilayers and spin valves depend on the relative orientation of the magnetization direction of the ferromagnetic elements. Whereas the contrast in the resistance for parallel and antiparallel magnetizations, the so-called giant magnetoresistance, is relatively well understood for quite some time, a coherent picture for non-collinear magnetoelectronic circuits and devices has evolved only recently. We review here such a theory for electron charge and spin transport with general magnetization directions that is based on the semiclassical concept of a vector spin accumulation. In conjunction with first-principles calculations of scattering matrices many phenomena, e.g. the current-induced spin-transfer torque, can be understood and predicted quantitatively for different material combinations.     

Time-domain measurement of current-induced spin wave dynamics

The performance of spintronic devices critically depends on three material parameters, namely, the spin polarization in the current (P), the intrinsic Gilbert damping (α), and the coefficient of the nonadiabatic spin transfer torque (β). However, there has been no method to determine these crucial material parameters in a self-contained manner. Here we show that P, α, and β can be simultaneously determined by performing a single series of time-domain measurements of current-induced spin wave dynamics in a ferromagnetic film.     

Phenomenology of current-induced dynamics in antiferromagnets

We derive a phenomenological theory of current-induced staggered magnetization dynamics in antiferromagnets. The theory captures the reactive and dissipative current-induced torques and the conventional effects of magnetic fields and damping. A Walker ansatz describes the dc current-induced domain-wall motion when there is no dissipation. If magnetic damping and dissipative torques are included, the Walker ansatz remains robust when the domain wall moves slowly. As in ferromagnets, the domain-wall velocity is proportional to the ratio between the dissipative torque and the magnetization damping. In addition, a current-driven antiferromagnetic domain wall acquires a net magnetic moment.     

Current-induced spin accumulation in lateral superlattices with Rashba and Dresselhaus spin–orbit interaction

The current-induced spin accumulation is calculated for a 1D lateral semiconductor superlattice with spin–orbit interaction of the Rashba and Dresselhaus type. Due to its particular symmetry, the Rashba interaction alone only leads to an in-plane component of the magnetization transverse to the applied electric field. When in addition a Dresselhaus contribution is present, this symmetry is lifted, and all components of the magnetization are induced by the electric field. Based on the density-matrix approach, the induced spin polarization is determined as a function of external in-plane electric and magnetic fields.     

Current-induced excitations in single cobalt ferromagnetic layer nanopillars

Current-induced excitations in Cu/Co/Cu single ferromagnetic layer nanopillars ( approximately 50 nm in diameter) have been studied experimentally as a function of Co layer thickness at low temperatures for large applied fields perpendicular to the layers. For asymmetric junctions current-induced excitations are observed at high current densities for only one polarity of the current and are absent at the same current densities in symmetric junctions. These observations confirm recent predictions of spin-transfer torque induced spin-wave excitations in single layer junctions with a strong asymmetry in the spin accumulation in the leads.     

Direct determination of large spin-torque nonadiabaticity in vortex core dynamics

We use a pump-probe photoemission electron microscopy technique to image the displacement of vortex cores in Permalloy discs due to the spin-torque effect during current pulse injection. Exploiting the distinctly different symmetries of the spin torques and the Oersted-field torque with respect to the vortex spin structure we determine the torques unambiguously, and we quantify the amplitude of the strongly debated nonadiabatic spin torque. The nonadiabaticity parameter is found to be β=0.15±0.07, which is more than an order of magnitude larger than the damping constant α, pointing to strong nonadiabatic transport across the high magnetization gradient vortex spin structures.     

Reduction in critical current density of current-induced magnetization switching

We have investigated the current-induced magnetization switching in an exchange-biased spin valve structure. By using an unpatterned antiferromagnetic layer to pin the fixed Co layer, we obtained a lower switching current density by a factor of 5 than a simple spin valve structure. For the application, it is important to know how to keep the spin polarization when the thicker layer is pinned by an antiferromagnet. The unpatterned pinned ferromagnetic lead can be a good solution for spin-transfer-torque-activated device. The effect of Cu buffer layer on the top of the thin Co and Ru buffer layer under the thick Co layer on the current-induced magnetization switching in cobalt-based trilayer spin valves was also investigated. The experimental results showed that the Ru buffer layer in combination with Cu buffer layer could induce a decrease in the critical switching current by 30%, and an increase in the absolute resistance change by 35%, which is caused by an improvement of a microstructure of a thicker Co polarizer.     

External magnetic field effects on a distorted kagome antiferromagnet

We report bulk magnetization, and elastic and inelastic neutron scattering measurements under an external magnetic field H on the weakly coupled distorted kagome system, Cu2(OD)3Cl. Our results show that the ordered state below 6.7 K is a canted antiferromagnet and consists of large antiferromagnetic ac components and smaller ferromagnetic b components. By first-principles calculations and linear spin wave analysis, we present a simple spin Hamiltonian with nonuniform nearest neighbor exchange interactions resulting in a system of coupled spin trimers with a single-ion anisotropy that can qualitatively reproduce the spin dynamics of Cu2(OD)3Cl.     

Domain wall creation in nanostructures driven by a spin-polarized current

We report on current-driven magnetization reversal in nanopillars with elements having perpendicular magnetic anisotropy. Whereas only the two uniform magnetization states are available under the action of a magnetic field, we observed current-induced Bloch domain walls in pillars as small as 50 x 100 nm(2). This domain wall state can be further controlled by current to restore the uniform states. The ability to nucleate and manipulate domain walls by a current gives insight into the reversal mechanisms of small nanoelements and provides new prospects for ultrahigh density spintronic devices.     

Spin-dependent transport in a nanopillar non-local spin valve

We investigate the injection of a pure spin current into a non-magnetic Cu wire in a lateral spin valve. We detect the spin accumulation occurring at the interfaces between the magnetic nanopillars and the non-magnetic wire in the non-local geometry. We confirm that the accumulated spins diffuse equally in the Cu wire irrespective of the presence of a charge current. The inversion of the injector and detector magnetic nanopillars does not affect the spin signal, in agreement with analytical predictions for this system.     

Roles of spin-polarized current and spin accumulation in the current-induced magnetization switching

To clarify the contributions of spin-polarized current and spin accumulation to the current-induced magnetization switching, the effects of the top electrode size of the magnetic nanopillar are investigated both theoretically and experimentally. Theoretical calculation demonstrates that the spin-polarized current and the spin accumulation can be adjusted in opposite directions by modifying the size of the top electrode. Increase in the size of the top electrode suppresses the spin accumulation but enhances the spin-polarized current inside the nanopillar. On the other hand, it is shown experimentally that the nanopillar with a wide top electrode exhibits small critical switching current compared to the nanopillar with a narrow top electrode. The results suggest that the spin-polarized current contributes to the current-induced magnetization switching dominantly over the spin accumulation.     

自旋转移矩效应激发的非线性磁化动力学

本文基于宏观磁矩(macrospin)的Landau-Lifshitz-Gilbert方程,模拟研究了磁性自旋阀结构中由垂直膜面流向的自旋极化电流所激发的磁化转动动力学特性.直流自旋极化电流借助自旋转移矩效应可驱动磁矩翻转或作周期性振荡,交流电可以激发出具有混沌行为的磁矩振荡.展示了磁矩振荡行为随电流强度变化而发生倍周期分岔、直至混沌振荡的行为规律. 关键词： 自旋转移矩效应 微磁模拟 磁性自旋阀 混沌     

Classical nuclear motion in quantum transport

An ab initio quantum-classical mixed scheme for the time evolution of electrode-device-electrode systems is introduced to study nuclear dynamics in quantum transport. Two model systems are discussed to illustrate the method. Our results provide the first example of current-induced molecular desorption as obtained from a full time-dependent approach and suggest the use of ac biases as a way to tailor electromigration. They also show the importance of nonadiabatic effects for ultrafast phenomena in nanodevices.     

Current-driven magnetization switching and domain wall motion in nanostructures—Survey of recent experiments

An overview of recent experimental studies and new routes in the field of current-driven magnetization dynamics in nanostructured materials is given. The review introduces the basic concepts (Landau–Lifshitz phenomenology, critical current, spin currents in relation to spin accumulation, adiabatic/non-adiabatic spin-torque) and describes the main results of recent experiments on current-driven magnetization reversal within vertical pillar-like nanostructures and current-driven domain wall motion within laterally confined specimens. While for the pillar systems a discussion is provided of how the introduction of layers with perpendicular magnetic anisotropy, tunnel barriers and exchange bias and(or) oxide layers can be used to reduce the critical current densities for current-induced switching, the role of perpendicular anisotropy, use of spin valve structures, diluted magnetic semiconductors and epitaxial materials to increase the domain wall velocities are reviewed in the case of current-driven domain wall movement within lateral systems.     

Controlled normal and inverse current-induced magnetization switching and magnetoresistance in magnetic nanopillars

By combining pairs of ferromagnetic metals with the same or different signs of scattering anisotropies in ferromagnetic-nonmagnetic-ferromagnetic metal nanopillars, we independently invert just the magnetoresistance, just the direction of current-induced magnetization switching, or both together, at room temperature (295 K) and at 4.2 K. In all cases studied, the switching direction is correctly predicted from the net scattering anisotropy of the fixed ferromagnet, including both bulk and interfacial contributions.