Atomic and electronic structures of Mg-doped perfect SrTiO3 and crystals containing oxygen vacancies from first principles

The electronic properties of Mg-doped perfect SrTiO₃ and crystals containing oxygen vacancies systems are investigated by first principles calculation. Dopant formation energy results show that the Mg atoms preferentially enter the Sr site in SrTiO₃. Substitution of Ti by Mg brings some acceptor levels, which introduces the p-type conductivity of SrTiO₃. Creation of oxygen vacancies in SrTiO₃ introduces donor levels, which can contribute to the n-type conductivity. In SrTiO₃ containing oxygen vacancies system, a self-compensation effect will occur when Ti is substituted by Mg, and the system undergoes n-type to p-type transition.     

Evidence of the primary-color photoluminescence in ion (H,H,C) irradiated and thermal annealed SrTiO3

We have measured photoluminescence (PL) spectrum of (1) thermal-annealed SrTiO₃/Si thin film and undoped SrTiO₃ single crystal; (2) SrTiO₃ single crystal irradiated by high energy (3 MeV) proton, deuterium, and He ion beams and (3) SrTiO₃ single crystal irradiated by low energy (60 keV) H⁺ and C⁻ ions. Two PL emissions are induced in (1) and (2) at visible frequencies 3 and 2.45 eV, while another PL peak is induced at 2 eV in (3). When compared with our previous PL experiments on high-temperature annealed SrTiO₃/SiO₂/Si thin film and 3 MeV proton (H⁺) irradiated STO single crystal, these results confirm that the three PL emissions with blue (3 eV), green (2.45 eV), and red-orange (2 eV) frequencies originate indeed from SrTiO₃. These primary-color PL effect induced at room-temperature makes STO a strong candidate material for future oxide-based optoelectronic application.     

Influence of postdeposition annealing on structural properties and electrical characteristics of thin Tm2O3 and Tm2Ti2O7 dielectrics

We describe the structural properties and electrical characteristics of thin thulium oxide (Tm₂O₃) and thulium titanium oxide (Tm₂Ti₂O₇) as gate dielectrics deposited on silicon substrates through reactive sputtering. The structural and morphological features of these films were explored by X-ray diffraction, X-ray photoelectron spectroscopy, secondary ion mass spectrometry, and atomic force microscopy, measurements. It is found that the Tm₂Ti₂O₇ film annealed at 800 °C exhibited a thinner capacitance equivalent thickness of 19.8 Å, a lower interface trap density of 8.37 × 10¹¹ eV⁻¹ cm⁻², and a smaller hysteresis voltage of ∼4 mV than the other conditions. We attribute this behavior to the Ti incorporated into the Tm₂O₃ film improving the interfacial layer and the surface roughness. This film also shows negligible degrees of charge trapping at high electric field stress.     

不同组分厚度比的LaMnO3/SrTiO3异质界面电子结构和磁性的第一性原理研究

基于密度泛函理论的第一性原理计算, 研究了(LaMnO₃)_n/(SrTiO₃)_m(LMO/STO)异质界面的离子弛豫、电子结构和磁性质. 研究表明, 不同组分厚度比及界面类型时, 离子弛豫程度各不相同, 并且界面处的电子性质受此影响较大. 对于n型界面, 当LMO的厚度达到6个单胞层后, 电子会从LMO转移到STO, 转移的电子占据界面层Ti原子的3d电子轨道, 界面处出现二维电子气. 对于n型界面(LMO)_n/(STO)₂, 随着LMO厚度数n的增加, 由离子弛豫造成的结构畸变减小, 而界面处Ti原子周围电子的态密度和自旋极化却增大, 表明高厚度比的n型界面有利于产生高迁移率的二维电子气和自旋极化. 而对于p型(LMO)₂/(STO)₈界面, 在STO一侧基本没有结构畸变, 界面处无电子转移和自旋极化现象. 通过计算平均静电势发现n型和p型界面处的势差大小相差2 eV, 解释了p型界面不容易发生电荷转移的原因.     

Photoluminescence properties of Eu in Y(PO3)3 under VUV excitation

The photoluminescence properties of Y_1−x(PO₃)₃:xEu³⁺ (0<x≤0.2) are investigated. The excitation spectrum of Y_0.85(PO₃)₃:0.15Eu₃⁺ shows that both the (PO₃)₃³⁻ groups and the CT bands of O²⁻-Y³⁺ can efficiently absorb the excitation energy in the region of 120-250 nm. Under 147 nm excitation, the optimal emissive intensity of Y_1−x(PO₃)₃:xEu³⁺ (0<x≤0.2) is about 36% of the commercial phosphor (Y,Gd)BO₃:Eu³⁺, which hints that the absorbed energy by the host matrix could be efficiently transferred to Eu³⁺. We try to study the concentration quenching mechanism of Y_1−x(PO₃)₃:xEu³⁺ (0<x≤0.2) under 147 and 172 nm excitation.     

Combinatorial discovery of anomalous substrate effect on the photochemical properties of transition metal-doped epitaxial SrTiO3 heterostructures

Epitaxial Sr(V_xCr_yTi_1−x−y)O₃ (0≤x+y≤0.05) ternary composition spreads were grown on two different single crystal substrates, LaAlO₃ and Nb-doped SrTiO₃, by use of combinatorial laser molecular beam epitaxy with a specially patterned slide masking plate. The photocatalytic activity on the composition spreads was evaluated by the photo-reduction of Ag⁺ in an AgNO₃ aqueous solution to deposit Ag metal on the spreads. The V-doping effect was found to depend greatly on the substrate: the photodeposition of Ag was much enhanced in the composition region of SrV_0.05Ti_0.95O₃ only on the Nb-doped SrTiO₃, but not on the LaAlO₃ and non-doped SrTiO₃.     

Characterization of the VUV excitation spectrum of BaZr(BO3)2:Eu

The excitation spectra of M (M=Si⁴⁺, Ti⁴⁺) and Eu³⁺ co-doped BaZr(BO₃)₂, BaZrO₃:Eu and La₂Zr₂O₇:Eu in the vacuum ultraviolet (VUV) regions of 110-300 nm are investigated and the host-lattice absorption are characterized. The result indicated that BaZr(BO₃)₂:Eu³⁺ phosphor has a strong absorption under the VUV excitation, and in the host-lattice excitation, the strong band at 130-160 nm could be due to the BO₃ atomic groups; the band at 160-180 nm is related to the excitation of Ba-O; 180-200 nm corresponds to the charge transfer (CT) transition of Zr-O. The band at 200-235 nm due to the CT band of Eu³⁺-O²⁻ and a bond valence study explained the observed weak CT band of Eu³⁺-O²⁻ in the excitation spectra of BaZr(BO₃)₂:Eu³⁺. The emission results show that Si⁴⁺ can sensitize luminescence in the host of BaZr(BO₃)₂:Eu but Ti⁴⁺ has no improvement effect on luminescence.     

氧压对SrTiO3和SrNb0.2Ti0.8O3薄膜晶格参数的影响及激光感生热电电压效应

采用脉冲激光沉积技术制备了SrTiO₃和SrNb_0.2Ti_0.8O₃薄膜.X射线衍射分析表明在LaAlO₃(100)单晶平衬底上生长的SrTiO₃及SrNb_0.2Ti_0.8O₃薄膜是沿［001］取向的近外延生长.随着氧压在一定范围内逐渐增大,SrTiO₃薄膜的晶格参数减小,而SrNb_0.2Ti_0.8O₃薄膜的晶格参数先减小后增大.同时摸索出制备具有二维电子气超晶格(SrTiO₃/SrNb_0.2Ti_0.8O₃)_L的最佳氧压为1.0×10^-2Pa.另外在LaAlO₃(100)倾斜衬底上制备的SrNb_0.2Ti_0.8O₃薄膜中观察到激光感生热电电压效应. 关键词： 0.2Ti_0.8O₃薄膜')" href="#">SrNb_0.2Ti_0.8O₃薄膜 晶格参数 激光感生热电电压 脉冲激光沉积     

Spatial charge distribution and conductivities of the LaAlO3/SrTiO3 interfaces: A theoretical study

The electronic properties of the charge carriers at the LaAlO₃/SrTiO₃ interfaces are investigated by first principles studies. For the n-type interface, the carriers are located only on the SrTiO₃ side. For the p-type interface, the carriers are highly localized at the interface. A critical thickness of the LaAlO₃ overlayer exists, below which, the interface is insulating. Moreover, we show that the effective masses and mobilities of the carriers are spatially anisotropic and have a strong disparity for the two types of carriers. These results are consistent with experimental observations and are explained by the band structures and alignments of the consisting oxides and their interaction at the interfaces.     

High-resolution FTIR spectroscopy of the 3ν2 band of PH3

High-resolution Fourier transform spectrum of phosphine (PH₃) at room temperature has been recorded in the region of the 3ν₂ band (2730-3100 cm⁻¹) at an apodized resolution of 0.005 cm⁻¹. About 200 vibration-rotation transitions have been least squares fitted with an rms of 0.00039 cm⁻¹ after taking into account the ΔK = ±3 interaction.     

Growth and spectroscopic characterization of Er: Sr3Y(BO3)3 crystal

This paper reports the growth and spectroscopic characterization of Er³⁺:Sr₃Y(BO₃)₃ crystal. Er³⁺:Sr₃Y(BO₃)₃ crystal with dimensions up to ∅20×35 mm³ has been grown by Czochralski method. The polarized spectroscopic properties of Er³⁺:Sr₃Y(BO₃)₃ crystal were investigated. Based on the Judd-Ofelt theory, the effective intensity parameters Ω_t were obtained: Ω₂=1.71×10⁻²⁰ cm², Ω₄=1.39×10⁻²⁰ cm², Ω₆=0.74×10⁻²⁰ cm² for π-polarization, and Ω₂=1.77×10⁻²⁰ cm², Ω₄=1.44×10⁻²⁰ cm², Ω₆=0.65×10⁻²⁰ cm² for σ-polarization. The emission cross-section σ_em was calculated to be 4.75×10⁻²¹ cm² for π-polarization at 1536 nm and 6.30×10⁻²¹ cm² for σ-polarization at 1537 nm. The investigated results showed that Er³⁺:Sr₃Y(BO₃)₃ crystal may be regarded as a potential laser host material for 1.55 μm IR solid-state lasers.     

Raman scattering and room temperature ferromagnetism in Co-doped SrTiO3 particles

Raman scattering has been used to study the influence of cobalt, an effective dopant to obtain SrTiO₃ magnetic oxide, on the lattice dynamics of SrTiO₃. It is found that Co doping increases the lattice defects and induces a Raman vibration mode of 690 cm⁻¹. On the other hand, the ferromagnetism dependence on the x and annealing temperature was clearly and coherently observed in SrTi_1−xCo_xO₃ (x = 0, 0.01, 0.03 and 0.05) nanoparticles. It is found that the ferromagnetism of SrTi_1−xCo_xO₃ nanoparticles is weakly related to crystal deformation and oxygen vacancies in SrTiO₃. So, F-center model can explain the origin of the ferromagnetism in the prepared Co-doped SrTiO₃ samples. At the same time, the finding of large room-temperature ferromagnetism (1.6 emu/g) in this system would stimulate further interest in the area of more complicated ternary oxides.     

Preparation, characterization and properties of N-rich Zr-N thin film with Th3P4 structure

A N-rich Zr-N film with Th₃P₄ structure (denoted as c-Zr₃N₄) was grown on Si and glass substrate by radio frequency (rf) magnetron sputtering technique with high pure Zr as target and high pure N₂ as sputtering gas. The crystal structure and composition of the c-Zr₃N₄ was characterized by X-ray diffractometry, transmission electron microscopy and X-ray photoelectron spectroscopy. The lattice constant of the c-Zr₃N₄ was measured to be about 0.674 nm. Hall measurement indicates that the c-Zr₃N₄ compound is a p-type semiconductor with resistivity of 2.121 × 10⁴ Ω cm, carrier concentration of 9 × 10¹⁴ cm⁻³ and Hall mobility of 0.34 cm²/(V s). Its bandgap was evaluated by absorption spectroscopy to be about 2.8 eV. A mechanism of formation of the c-Zr₃N₄ compound was suggested in the present work.     

(BiFeO3)25/(La0.7Sr0.3MnO3)25 多层膜的光学和电学性质

采用射频磁控溅射方法在(001)SrTiO₃衬底上制备(001)取向的(BiFeO₃)₂₅/(La_0.7Sr_0.3MnO₃)₂₅多层膜.光学测试结果表明,1.3-2.1 eV范围内,相对于衬底而言多层膜光吸收增强; BiFeO₃的带隙为2.7 eV. 另外,结合绝缘介质导电模型分析了所测得的电流-电压数据,在所测试的温度及电压下,所制备的(BiFeO₃)₂₅/(La_0.7Sr_0.3MnO₃)₂₅多层膜的导电机理由空间电荷限制电导主导. 关键词： 多层膜 吸光度 空间电荷限制电导     

Luminescence investigation of red phosphors Ca0.54Sr0.34−1.5xEu0.08Smx(MoO4)y (WO4)1−y for UV-white LED device

Ca_0.54Sr_0.34−1.5xEu_0.08Sm_x(MoO₄)_y (WO₄)_1−y red phosphors were prepared by solid-state reaction using Na⁺ as a charge compensator for light-emitting diodes (LED). The effects of Na⁺ concentration, synthesis temperature, reaction time and Eu³⁺ concentration were studied for the properties of luminescence and crystal structure of red phosphors. The results show that the optimum reaction condition is 6%, 900 °C, 2 h and 8%. The photoluminescence spectra show that red phosphors are effectively excited at 616 nm by 292, 395 and 465 nm. The wavelengths of 465 nm nicely match the widely applied emission wavelengths of blue LED chips.     

Luminescence of La3F3[Si3O9]:Ce

The luminescence properties of Ce³⁺ in La₃F₃[Si₃O₉] are reported. Excitation and emission bands corresponding to 4f¹→5d¹ transitions of Ce³⁺ were identified. The center of gravity of the 5d states lies at remarkable high energy (43.2×10³ cm⁻¹) for Ce³⁺ in a silicate compound. This high value is attributed to the combined oxygen/fluoride coordination of the Ce³⁺ ion. Emission from the lowest 4f5d level to the ²F_5/2 and ²F_7/2 levels was found at 32.4×10³ and 30.4×10³ cm⁻¹. These results are compared with literature data on silicates and fluorides. From the values found for Ce³⁺, predictions are made for the positions of the 4f5d bands of Pr³⁺ and Er³⁺ in La₃F₃[Si₃O₉]. For both ions, it is concluded that in this host lattice emission is expected from high lying 4fⁿ energy levels.     

One-magnon light scattering and spin-reorientation transition in epitaxial BiFeO3 thin films

Raman scattering from one-magnon excitation has been observed for the first time in epitaxial BiFeO₃ thin films grown on (1 1 1) SrTiO₃ substrates. The intensities and the frequency of the magnon mode at 18.9 cm⁻¹ (M₁) showed a discrepancy at the characteristic temperatures of ∼140 and 200 K and the magnon mode at 27.9 cm⁻¹ (M₂) disappeared at ∼200 K suggesting spin-reorientation (SR) transition in the epitaxial BFO film. The dc susceptibility measurement showed a large discrepancy near these two temperatures evidently elucidating the spin-reorientation transition mechanism. The partial spectral weight of the magnon modes is believed to be transferred to the lowest phonon mode appearing at 72.8 cm⁻¹ and higher magnon mode M₂ disappearing near 200 K reveal magnon-phonon coupling near to SR transition.     

Magnetotransport properties of epitaxial Pr0.5Ca0.5MnO3 films grown by a solution technique

Epitaxial Pr_0.5Ca_0.5MnO₃ films have been synthesized on (0 0 1) SrTiO₃ substrate using a chemical solution deposition technique and two-step post-annealing process. The zero field resistivity of the films shows semiconducting behavior and a characteristic of charge ordering is observed at 230 K. The resistivity of the 10 nm film did not show any effect with the magnetic field. However, melting of charge ordering was observed for the 120 nm film at an applied magnetic field of 4 T. Large decrease in the resistivity of the 120 nm film (<100 K) resulted in magnetoresistance of nearly −100% at 75 K.     

Enhanced luminescence of Ca3B2O6:Dy phosphors by Na-codoping for LED applications

The Ca_2.95−yDy_0.05B₂O₆:yNa⁺ (0≤y≤0.20) phosphors were synthesized at 1100 °C in air by the solid-state reaction route. The as-synthesized phosphors were characterized by X-ray powder diffraction (XRD), scanning electron microscopy (SEM), photoluminescence excitation (PLE), photoluminescence (PL) spectra and thermoluminescence (TL) spectra. The PLE spectra show the excitation peaks from 300 to 400 nm due to the 4f-4f transitions of Dy³⁺. This mercury-free excitation is useful for solid-state lighting and light-emitting diodes (LEDs). The emission of Dy³⁺ ions on 350 nm excitation was observed at 480 nm (blue) due to the ⁴F_9/2→⁶H_15/2 transitions, 575 nm (yellow) due to ⁴F_9/2→⁶H_13/2 transitions and 660 nm (red) due to weak ⁴F_9/2→⁶H_11/2 emissions. The PL results from the investigated Ca_2.95−yDy_0.05B₂O₆:yNa⁺ phosphors show that Dy³⁺ emissions increase with the increase of the Na⁺ codoping ions. The integral intensity of yellow to blue (Y/B) can be tuned by controlling Na⁺ content. By the simulation of white light, the optimal CIE value (0.328, 0.334) can be achieved when the content of Na⁺-codoping ions is y=0.2. The results imply that the Ca_2.95−yDy_0.05B₂O₆:yNa⁺ phosphors could be potentially used as white LEDs.     

Stabilization of a very high-k crystalline ZrO2 phase by post deposition annealing of atomic layer deposited ZrO2/La2O3 dielectrics on germanium

The impact of the ZrO₂/La₂O₃ film thickness ratio and the post deposition annealing in the temperature range between 400 °C and 600 °C on the electrical properties of ultrathin ZrO₂/La₂O₃ high-k dielectrics grown by atomic layer deposition on (1 0 0) germanium is investigated. As-deposited stacks have a relative dielectric constant of 24 which is increased to a value of 35 after annealing at 500 °C due to the stabilization of tetragonal/cubic ZrO₂ phases. This effect depends on the absolute thickness of ZrO₂ within the dielectric stack and is limited due to possible interfacial reactions at the oxide/Ge interface. We show that adequate processing leads to very high-k dielectrics with EOT values below 1 nm, leakage current densities in the range of 0.01 A/cm², and interface trap densities in the range of 2-5 × 10¹² eV⁻¹ cm⁻².