Formation of spectra of quantum well states in thin Al layers on W(110)

Quantum well states of sp-type in thin metal layers of aluminum on the W(110) surface were experimentally studied by angle-resolved photoelectron spectroscopy depending on the layer thickness in a range of about 1–15 monolayers. It is shown that the aluminum layer is formed in accordance with the Kurdyumov-Sachs orientation relationship. Modification of the quantum well state spectra is observed with the increase in the layer thickness. The changes of the energy of quantum well states with the formation of each new monolayer have a stepwise character. This behavior can be used to calibrate the thickness of the deposited film with an accuracy within fractions of a monolayer. To confirm the reliability of the calibration, the thickness of the formed layers was tested using the attenuation of the W4f _7/2 peak intensity.     

Image potential eigenstates and resonances on the (110) surfaces of noble metals: Energies and lifetimes

The energies and lifetimes of the image potential resonances at the ? point on the Cu(110), Ag(110), and Au(110) surfaces are studied, and the energies of the image potential states on the Pd(110) surface are analyzed. It is shown that every quantum number n corresponds to a pair of image potential states (resonances) n ⁺ and n ^? at the ? point. The average energy of a pair of eigenstates (resonances) at n ≥ 2 is well described by the formula ē _n = (E _n+ + E _n?) = E ₀ ? (0.85 eV)/(n + δ)², where δ is the quantum defect, E ₀ = (1/2m _e )(?π/a)², and a is the lattice parameter. The splitting energy of a pair of eigenstates (resonances) obeys the law ΔE _n = E _n+ — E _n? ∝ n ^?3. The lifetimes τ _n± of image potential resonances are proportional to n ³.     

Comparison between Rydberg surface resonances on W(001) and W(110)

Comparison is made between high-resolution LEED measurements of electronic surface resonances in the (00) beam from W(001) and W(110). The study of W(110) extended to several polar angles of incidence provides new information that helps to explain the data obtained on W(001) at a fixed angle.     

Quantum-well states in bilayers of Ag and Au on W(1 1 0)

sp-Like quantum-well states (QWS) in thin monocrystalline bilayer films of Ag and Au on W(1 1 0) and of single Ag films were studied by angle-resolved photoemission. We find that the propagation of the electronic states in the bilayer films along [1 1 1] depends on the energy relative to the band edge of Au metal at the L point of the Brillouin zone. In particular, QWS with binding energies less than this band-edge energy (1.1 eV) are strongly confined to the Ag layer, while for higher binding energies the QWS extend across the whole bilayer film. This clearly demonstrates the weakness of the potential barrier at the Ag/Au interface in the context of QWS formation at energies where electronic states exist in both metals.     

Quantum-well resonances and image states in the Ar/Cu(1 0 0) system

A theoretical study of the effect of an atomically thin rare gas layer on the dynamics of excited electronic states at metal surfaces is presented for the case of a few mono-layers of Ar on a Cu(1 0 0) surface. We develop a 3D-microscopic model with predictive capabilities of the interaction of an electron with an Ar layer physisorbed on a metal surface. It takes into account the 3D structure of the Ar layer as well as its dielectric character. The dynamics of the excited electron on the surface is treated within a wave-packet propagation approach. The calculations show that two different types of excited states are present at the Ar/Cu(1 0 0) surface. (i) Image states that are repelled into vacuum as compared to their position on clean Cu(1 0 0) surfaces, leading to a decrease of their binding energies and to an increase of their lifetimes. (ii) Quantum-well resonances, corresponding to quasi-stationary states localised inside the Ar layer; they are associated with the quantisation of the conduction band in the finite size Ar layer. The present results on image states nicely agree with very recent time-resolved two-photon-photo-emission experiments by Berthold, Feulner and Höfer.     

Analysis of the possibility of the spin-orbit origin of surface state splitting in thin Mg(0001) layers on W(110) and Mo(110)

A set of magnesium films ranging in thickness from submonolayer to a few tens of atomic layers grown on single-crystal W(110) has revealed film-thickness dependent splitting of states localized energywise close to the magnesium surface state. Literature refers to several models describing the origin of this splitting; in one case, it is treated as substrate-induced spin-orbit splitting, and in another, as due to formation of nondegenerate pairs of even and odd surface states penetrating deep into the film bulk. The proposed models draw upon studies of films more than five monolayers thick. A comparative investigation of the Mg/W(110) and Mg/Mo(110) systems has been carried out for magnesium films of different, starting from submonolayer, thicknesses, which did not substantiate the spin-orbit origin of this splitting and suggests instead formation on the substrate-film interface of hybridized states, with their variation with thickness being assigned to variation in the contribution due to the magnesium surface states. Original Russian Text ? A.M. Shikin, D.E. Marchenko, N.A. Vinogradov, G.V. Prudnikova, A.G. Rybkin, V.K. Adamchuk, O. Rader, 2009, published in Fizika Tverdogo Tela, 2009, Vol. 51, No. 3, pp. 572–583.     

W(110)基底上的铁纳米岛初始自发磁化态的微磁学模拟

用微磁学模拟研究W(110)基底上铁纳米岛的初始自发磁化态的磁畴结构,确定了不规则形状、椭圆形和矩形岛中不同磁畴态之间的各向异性常数的临界点,得到了纳米岛的磁化态作为各向异性常数和厚度函数的完整相图,相图中存在一较宽的过渡区,把双畴态与涡旋态和菱形态分开,过渡区两侧的边界是不确定的.计算结果表明,初始自发磁化态的磁畴结构主要由各向异性及岛的厚度决定,而且岛的边沿形状对涡旋态和菱形态的磁畴结构有重要影响.准确的铁纳米岛的各向异性常数仍有待于进一步确定. 关键词： 初始自发磁化磁畴结构 铁纳米岛 微磁学模拟 各向异性     

Order-disorder transformations in chemisorbed layers: Oxygen on W(110)

We have investigated the order-disorder transformation in oxygen adsorbed on W(110). An analysis of the ordering at T = 0 using the lattice gas formalism shows that there must be significant three-particle interactions to break the particle-hole symmetry. This is necessary since there is a p(2 × 2) phase at three-quarter coverage which is not present at one-quarter coverage. Monte Carlo techniques are used to obtain estimates of the strength of the two and three-particle interactions by matching calculated and measured LEED intensity curves. The qualitative characteristics of the phase diagram are discussed with emphasis on the multicritical points which must be present if the transition at half coverage is second order. Evidence in support of a second order transition is reviewed.     

Substrate-induced spin-orbit splitting of quantum-well and interface states in Au,Ag, and Cu layers of different thicknesses on W(110) and Mo(110) surfaces

The substrate-induced spin-orbit splitting of interface and quantum-well states formed in Au, Ag, and Cu layers on W(110) and Mo(110) surfaces has been revealed using angle- and spin-resolved photoelectron spectroscopy. It has been shown that the magnitude of the splitting depends noticeably on the atomic number of the substrate material and is markedly larger for layers of these metals on W(110), i.e., on the surface of a metal with a larger atomic number (Z _W = 74), than on the surface of Mo(110), i.e., an element with a smaller atomic number (Z _Mo = 42), while depending only weakly on the atomic number of the adsorbed metal. Measurements of the dispersion of the formed quantum-well states have shown that the substrate-induced spin-orbit splitting increases with increasing parallel component of the photoelectron momentum (which correlates with the Rashba model) for all thicknesses of deposited films (up to 10 ML). The magnitude of induced spin-orbit splitting of the interface states evolving in monolayer Au, Ag, and Cu coatings on W(110) and Mo(110) decreases with increasing parallel component of the excited photoelectron momentum.     

Ultra thin Al film on the W(110) surface

We have investigated the surface structure of the Al/W(110) surface using low energy electron diffraction (LEED) and low energy ion scattering spectroscopy (ISS). We observe a p(2 × 1) double domain LEED image for the 0.5 ML Al/W(110) surface at annealing temperature 850 °C. We found that 0.5 ML Al atoms cover on the W(110) surface uniformly but do not form 3 or 2-dimensional islands. We also measured the Al adsorption site at the Al/W(110)-p(2 × 1) surface using ISS. We found that Al atoms adsorbed at the center of the bridge site. The height of the adsorbed Al atoms is determined to be 2.18 ± 0.15 Å above the W surface layer.     

Spectra of quantum states in thin metal films and their modification: Al/W(110) system

The modification of spectra of quantum well states of sp-type in thin Al films on the W(110) surface was experimentally investigated by angular-resolved photoelectron spectroscopy both during deposition and in dependence of the detection angle. Quantum well states are observed for the partially filled band of valence states in the range of binding energies from 4.4 eV to the Fermi level. An Al film with a thickness of 11 monolayers exhibits a jump of the dispersion relations of quantum well states in the local W(110) band gap in the ΓS direction and splitting of these relations due to the effect of substrate electronic structure on the formed spectrum of quantum states and their possible spin polarization.     

Spin-resolved photoemission study of in situ grown epitaxial Fe layers on W(110)

Spin- and angle-resolved photoemission spectroscopy of in situ grown epitaxial Fe layers on W(110) shows bulk-like behavior for more than two atomic Fe layers. For about ten and more atomic layers of Fe we find a spin polarization to be about -100% near the Fermi energy and +80 % between 1 eV and 3 eV binding energy. For the bilayer of Fe drastic changes in the spin-resolved spectra and a 20 % enhancement of the spin polarization compared to the bulk value are observed. The monolayer of Fe is ferromagnetically ordered with a spin polarization reduced by about 50%. A switching of the easy magnetization axis from [001] to [11̄0] is observed in the spin polarization with decreasing Fe layer thickness near d = (65±5) Å.     

Adsorption and electron properties of thin nickel films on W(110) surface

The evolution of the properties of ordered nickel films with thicknesses increasing from one to three atomic monolayers (ML) adsorbed on the W(110) single crystal surface is studied under ultrahigh vacuum conditions by the methods of reflection-absorption infrared spectroscopy (RAIRS) and ultraviolet photoelectron spectroscopy (UPS). The film structure corresponds to that of the Ni(111) single crystal face. The RAIRS technique is used to study the vibrational properties of the probing NO molecules adsorbed on the nickel films studied. In the course of the nickel film growth, whereby its thickness increases from 1 to 3 ML, both the vibrational and photoelectron spectra exhibit significant variation, which is indicative of a change in the adsorption and electron properties of the film. Stabilization of the IR and photoelectron spectra at a film thickness of 3 ML indicates that this thickness corresponds to the formation of the main adsorption and electron properties of the deposit. At the same time, the vibrational spectra of NO molecules adsorbed on a monoatomic nickel film exhibit features typical of adsorption on the W[110] surface of a massive tungsten crystal.     

The adsorption of CO and oxygen on Cu layers on a W(110) surface

The adsorption of CO, and to a lesser extent that of oxygen on Cu layers deposited on a W(110) surface has been investigated by thermal desorption. Auger, and XPS measurements. For CO the amount adsorbed decreases monotonically with Cu thickness from 1–5 layers. For O there is a slight increase for 1 layer, followed by a steep decrease up to 4 Cu layers where the amount adsorbed levels off. CO adsorption shifts the core levels of Cu (observed for 1 layer of Cu) to higher binding energy by 0.4 eV; the O 1s level of CO is also shifted to higher binding energy by 1.5 eV, relative to CO/W(110) suggesting that electron transfer from CO occurs but is passed on to the underlying W. For O adsorption there is very little shift in the Cu core levels or in the O 1s level, relative to O/W(110). Thermal desorption of CO at saturation coverage from Cu/W(110) shows desorption peaks at 195, 227 and 266 K, as well as small peaks associated with CO desorption from clean W, namely a peak at 363 K and β-desorption peaks at 1080 and 1180 K. As CO coverage is decreased the 195 and 227 K peaks disappear successively; the W-like peaks remain unchanged in intensity. It is argued that the latter may be due to adsorption on bare W at domain boundaries of the Cu overlayer, while the 190–266 K peaks are associated with adsorption on Cu, but probably involve reconstruction of the Cu layer. For n = 2–8 a single but composite peak is seen, shifting from 180 to 150 K as Cu thickness increases as well as a minor peak at 278 K, which virtually vanishes on annealing the Cu deposit at 850 K. The effect of tungsten electronic structure on the behavior of adsorbates on the Cu overlayers, as well as similar effects in other snadwich systems are discussed.