增益导引锁相列阵激光器实验及波导分析

用液相外延方法制做了十五个氧化物条形半导体激光器集成在一起的耦合多条形激光器,实现了锁相工作,脉冲峰值功率为4W/plane(300ns,5kHz).在对单条形激光器的模式特性完成数值分析的基础上,运用耦合模理论,对耦合多条形激光器的波导特性进行了数值分析和计算,计算结果和实验基本一致.     

列阵半导体激光器的噪声

重点报道列阵GaAs-AlGaAs激光器相对强度噪声的测量结果,并和单元器件作了比较.实验测量包括相对强度噪声和驱动电流、调制频率以及温度的关系,并验证了在这些情况下相对强度噪声在激光器处于阈值时具有最大值的理论予言.     

外腔锁相半导体激光器列阵的稳态分析

给出了描述半导体激光器列阵(LDA)稳定状态的非线性方程组。对非线性方程组进行了分析,研究了LDA在稳态运行时的特性。分别分析了LDA在同相模运行和反相模运行时,载流子浓度、振荡频率以及光子数密度与自由运行时相比较所发生的变化。     

半导体激光器列阵的有限元分析

本文利用有限元法对四种半导体激光器列阵进行了分析,得到了超模的近场强度分布,为实现最低阶超模的均匀强度分布提供了一些可能的结构.     

机载角反射器阵列设计

 低轨目标目前流行的类半球状布阵方式的远程角偏小,测距盲区较大。对角锥棱镜进行研究分析,依据角反射器光束入射角度允许变化范围,合理分布角反射器,设计了一机载激光反射器装置,外形尺寸为119 mm×88.8 mm,共有15个角锥棱镜,底面切割成正六边形,底面边长为15.5 mm,底面对边距为26.87 mm,有效通光口径为25 mm,高为19 mm。考虑到角反射器的速差效应及其补偿要求,角锥棱镜最大角误差为5″,面形最大误差为5″。通过合理设计,比较单层角反射器,增加了入射光允许的角度范围,大大减小了低轨目标的测试盲区。     

InGaAs/GaAs应变量子阱结构在1054nm激光器中的应用

采用金属有机物化学气相淀积(MOCVD)方法生长了InGaAs/GaAs应变量子阱,通过优化生长条件和采用应变缓冲层结构获得量子阱,将该量子阱结构应用于1 054 nm激光器的制备。经测试该器件具有9 mA低阈值电流和0.4 W/A较高的单面斜率效率,在驱动电流为50 mA时测得该应变量子阱光谱半宽为1.6nm,发射波长为1 054 nm。实验表明:通过优化工艺条件和采用应变缓冲层等手段,改善了应变量子阱质量,该结果应用于1 054 nm激光器的制备,取得了较好的结果。     

半导体激光器列阵在外腔下的光谱特性

使用普通高反镜作为19个单元的半导体激光器列阵(LDA)的外腔,通过调节高反镜的位置和角度,使LDA发出的光反馈回有源层,从而压窄了输出光谱并降低了LDA的阈值电流.实验中,运行于外腔下的LDA在不同的驱动电流下的输出光谱均被压窄到了原来的1/10左右,阈值电流从7 A降到了5.5 A,并且在9 A的偏置电流下输出功率提高了2倍.     

化学氧碘激光器中的角立方反射器的研制

分别利用电子束蒸发和离子束溅射手段在单晶硅基底上制备了54.7°入射1315nm和632.8nm双波长高反射薄膜,并对两种手段所镀制薄膜地性能进行了比较;然后对离子束溅射所镀制的反射镜进行了胶合,得到了高精度的角立方反射器。最后,将所制备的角立方反射器实际用于化学氧碘激光谐振腔后,获得了近衍射极限的激光输出。     

InGaAs/GaAs/InGaP量子阱激光器的温度电压特性

研究了InGaAs/GaAs/InGaP量子阱激光器在不同温度下的电流-电压特性,并建立了一个理论模型进行描述。实验所用激光器腔长为0.3 mm,脊条宽度为3μm。实验测量得到该激光器在15～100 K的电压温度系数(dV/dT)为7.87～8.32 mV/K,在100～300 K的电压温度系数为2.93～3.17 mV/K。由理论模型计算得到该激光器在15～100 K的电压温度系数为2.56～2.75 mV/K,在100～300 K的电压温度系数为3.91～4.15 mV/K。在100～300 K,实验测量与理论模型计算得出的电压温度系数接近,理论模型能较好地模拟激光器的温度电压特性;但在15～100 K相差较大,还需要进一步完善。     

高功率梯度折射率分别限制异质结构InGaAs/AlGaAs应变双量子阱激光器

采用金属有机化合物气相淀积（ Ｍ Ｏ Ｃ Ｖ Ｄ）方法成功地研制了具有两对梯度折射率（ Ｇ Ｒ Ｉ Ｎ）异质结结构的 Ｉｎ Ｇａ Ａｓ／ Ａｌ Ｇａ Ａｓ 应变双量子阱激光器。该激光器的波长为 ９７０～９８２ ｎｍ ,室温连续工作阈值电流密度为１４０ Ａ／ｃｍ ２, 工作在０．９ Ａ 时单面连续输出光功率为５２０ ｍ Ｗ , 工作在２．０ Ａ 时, 连续输出光功率为 １．４９ Ｗ , 最高功率可达 ２．４ Ｗ 。微分量子效率高达０．８３ Ｗ ／ Ａ。     

Quantum Information Processing in a Coupled Cavity Array

We consider a one-dimensional array of L identical coupled cavities, and each cavity is doped with a two-level qubit. Experimentally, it has been developed in several varieties by the newest technology. We find that the one-qubit quantum state can be perfectly transferred through the cavity array, and the entanglement between the first two qubits can also be transferred to the last two qubits. In addition, we successfully realized the entangling gate and swap gate in the coupled cavity array.     

Quantum Information Processing in a Coupled Cavity Array

We consider a one-dimensional array of L identical coupled cavities, and each cavity is doped with a two-level qubit. Experimentally, it has been developed in several varieties by the newest technology. We find that the one-qubit quantum state can be perfectly transferred through the cavity array, and the entanglement between the first two qubits can also be transferred to the last two qubits. In addition, we successfully realized the entangling gate and swap gate in the coupled cavity array.     

Reflection of Surface Plasmon Polaritons by a Corner Reflector of Negative Index Materials

A novel type of corner reflector for the reflection of surface plasmon polariton (SPP) is proposed. The reflector consists of two layers of compensatory media whose permittivity and permeability take opposite signs to that of the corresponding layer of the SP waveguide. By rigorously solving Maxwell's equations, the reflected SPP is proved to exist. The transverse wave vector of the reflected SPP is always antiparallel to that of the incident SPP and no phase retardation is introduced.     

Integrated Electro-Absorption Modulation DFB Laser Based Optical True Time-Delay Feeder for X-Band Phased Array Antennas

A 4-bit optical true-time-delay feeder incorporating an integrated electro-absorption modulation distributed feedback (DFB) laser for X-band phased array antennas is demonstrated. The integrated electro-absorption modulation DFB laser is an attractive device that provides a very compact, low-cost solution for optical true-time-delay systems. The variable delay line is constructed by cascaded magneto-optic switches, which have fast switching speed. The integrated electro-absorption modulation DFB laser system shows high signal-to-noise ratio up to 58dB, and the transmission performance of the system is relatively good and accredited.     

Quantum Information Processing in An Array of Fiber Coupled Cavities

We consider a fiber coupled cavity array. Each cavity is doped with a single two-level atom. By treating the atom-cavity systems as combined polaritonic qubits, we can transform it into a polaritonic qubit-qubit array in thedispersive regime. We show that the four fiber coupled cavity open chain and ring can both generate the four qubit W state and cluster state, and can both transfer one and two qubit arbitrary states. We also discuss the dynamical behaviors of the four fiber coupled cavity array with unequal couplings.     

新型液晶光学相控阵的特性研究

将液晶作为平板光波导的上包层,构建了液晶光学相控阵器件.根据Frank-Oseen液晶连续体弹性形变理论与光栅衍射理论,研究分析了基于这种新型结构下液晶光学相控阵的传输特性,输出衍射特性和其它性能特性.研究结果表明,器件的传输电控相位延迟可以实现更大的光程差;阵列电极周期数目、电极宽度、电极间隔宽度等结构参量对器件的输出衍射光束的光强分布和半峰值全宽度影响很大,同时光束扫描的可行性得到论证;器件的响应时间提高了一个数量级,且其色散性能获得改善.为以后研制新型液晶光学相控阵提供了理论基础与技术设计依据.     

InP基InGaAlAs/InGaAsSb应变量子阱激光器的子带跃迁计算

采用有效质量模型下的4×4 Luttinger-Kohn哈密顿量矩阵对In0.53Ga0.39Al0.08As/InxGa1-xAs0.9Sb0.1量子阱结构的能带进行了计算。求得了C1-HH1跃迁波长随In组分及阱宽的变化关系,并采用力学平衡模型计算了此应变材料体系在生长时的临界厚度。结果表明,在结构设计和材料生长中采用合适的材料组分和阱宽,在InP基InGaAlAs/InGaAsSb应变量子阱激光器中能够实现1.6～2.5 μm近中红外波段的激射波长。     

星地激光通信中分布式接收阵列的特性研究

星地激光通信中,发射机对准误差及大气湍流会引起接收信号衰落,对带前置光放大的阵列接收机,分析了分布式接收阵列的抗衰落性能。研究表明,分布式接收阵列对发射机对准误差引起的衰落具有一定抑制作用,阵列中各子接收孔径之间的距离可根据发射机对准误差及湍流的强弱进行优化设计。与传统式阵列相比,分布式阵列可以采用更窄的发射光束宽度,降低对发射功率的要求。分布式阵列的另一个重要特性还在于:当实际发射机对准误差标准差大于设计值时,通过调整阵列各子接收孔径之间的距离,可以在很大程度上降低发射机对准误差引起的功率损失。     

Thermal- and Spectral-Characteristics of High-Power Quasi-Continuous Wave 940-nm InGaAs Diode Laser Arrays

Experimental results of the thermal and spectral characteristics of a monolithic stack of high power quasicontinuous wave 940-nm InGaAs linear laser diode arrays have been evaluated. Thermal resistance as the most important thermal parameter characterizing a high-power laser diode package was obtained using the temperature rise measured directly by a thermo-camera. A new simple and convenient technique to measure a spectral transition of the emission from laser diode arrays is proposed. Spectral chirping due to the transient thermal power dissipated during the laser pulse was observed as a time-evolution of the spectral profile; it gave a comprehensible image of the chirping behavior. Comparing the temperature rise in the diode junction with the thermal simulation, it was determined that the thermal shift of central wavelength dλ/dT was 0.21 nm/°C. Detailed performances were identified for pumping a Yb³⁺ doped crystalline laser, and it was verified that the laser diode arrays were satisfactory to meet pumping source requirements for coupling to Yb³⁺ absorption linewidth.