用IR研究H~+辐照对Mo涂层的影响

在不锈钢基体上采用离子束混合技术及电子束处理方法进行Mo薄膜沉积,沉积后的试样再进行氢离子注入.分别对氢离子注入前后的样品进行500~4000波数范围内IR分析,研究了氢离子辐照前后涂层的红外光谱振动吸收峰的变化,对Mo涂层的抗氢机理进行了探讨.     

离子镀制备Cr/W混合过渡层的氢氘辐照效应研究

用双离子束镀膜方法在W基底表面制备不同厚度的Cr薄膜. 用冷场扫描电镜能谱分析仪对镀膜样品成分深度分布进行分析, 使用重离子加速器对镀膜样品进行高能、低束流的氢或氘辐照, 用扫描电镜对样品表面形貌变化进行分析, 运用粒子注入射程模拟软件SRIM对氢粒子在Cr/W双层块体中的射程进行模拟分析. 实验结果表明, 运用双离子束镀膜法能够在膜与基底的接触面区域制得Cr/W混合过渡层; 在高能、低束流的氢或氘辐照下, Cr/W混合过渡层易于使气体滞留而起泡, 双离子束制备的Cr膜层不易聚集氢或氘气体成泡.     

大块金属玻璃Al7.5Cu17.8Ni10.7Zr64的耐Ar12+离子辐照性能研究北大核心CSCD

利用能量为3 MeV的Ar12+离子辐照金属玻璃Al7.5Cu17.8Ni10.7Zr64和金属W,研究了金属玻璃的Ar离子辐照损伤,辐照剂量分别为1×1014,1×1015和1×1016 ions/cm2。XRD分析发现在不同剂量辐照下Al7.5Cu17.8Ni10.7Zr64均保持非晶为主要结构。不同剂量辐照后的金属玻璃样品表面没有明显的辐照损伤,而金属W在剂量为1×016 ions/cm2时表面出现大面积不规则的裂纹和孔洞。AFM分析显示Al7.5Cu17.8Ni10.7Zr64的表面均方根粗糙度随辐照剂量的增大而增大;辐照后金属玻璃的表面硬度略有降低,而金属W的硬度有所升高。在低于金属玻璃的玻璃化转变温度时,金属玻璃Al7.5Cu17.8Ni10.7Zr64的耐Ar12+溅射能力好于金属W。     

HL—1装置SiC涂层辐照实验的表面分析

本文应用表面分析技术研究HL-1装置中SiC涂层的等离子体辐照性能。结果表明,SiC材料应用于孔栏和壁涂层有利于减少杂质和提高等离子体品质。     

a-SiC:H薄膜的中子辐照研究

用射频（13.56MHz）反应溅射法制备了a-SiC:H 薄膜,并将制得的薄膜采用高能中子（14MeV）进行辐照。采用电阻率、Raman谱及红外光谱对薄膜的结构与特性变化规律进行了表征。分析结果表明：所得a-SiC:H薄膜中存在多余的非晶态碳。随着中子辐照剂量的增加,a-SiC:H薄膜中SP-2C=C键增加,即其中的碳存在类石墨化的趋势。中子辐照后薄膜的电阻率的略微减小现象,可用缺陷对载流子的捕获模型进行解释。     

a-SiC:H薄膜的中子辐照研究

 用射频（13.56MHz）反应溅射法制备了a-SiC:H 薄膜，并将制得的薄膜采用高能中子（14MeV）进行辐照。采用电阻率、Raman谱及红外光谱对薄膜的结构与特性变化规律进行了表征。分析结果表明：所得a-SiC:H薄膜中存在多余的非晶态碳。随着中子辐照剂量的增加，a-SiC:H薄膜中SP-2C=C键增加，即其中的碳存在类石墨化的趋势。中子辐照后薄膜的电阻率的略微减小现象，可用缺陷对载流子的捕获模型进行解释。     

110keV质子辐照温控涂层性能变化的XPS分析

实验研究了注量在1.0×10¹¹—1.0×10¹⁶p/cm²范围依次变化时110keV质子辐照引起的温控涂层热光性能的变化,并使用XPS谱仪分析了辐照样品化学态的变化. 实验结果表明,质子注量不高于1.0×10¹⁴p/cm²时,同种材料的温控涂层样品的相对光反射率变化很小,同时同种材料样品的表面化学结构如化学位移和元素的比例变化很小.当注量高于1.0×10¹⁴p/cm²时, 样品的相对光反射率变化明显,样品表面的原子化学结构变化大, 化学位移明显增加, 元素比例变化显著,所有样品表面的C元素比例明显增大而O元素比例明显减小.一定注量的低能质子辐照能够使某些低太阳吸收率α_s的温控涂层的太阳吸收率变得更低, 具有改善热光性能的效果.质子辐照之后温控涂层样品表面化学结构的变化与样品的物理性能的变化存在直接的关联.     

H+4, H+5和H+7团簇离子的测量和确认

报告了H+4, H+5, H+7等团簇离子的测量结果. 确认可以由H+3与一个或多个H和H2相互作用形成较大的H+4, H+5, H+7等团簇离子.     

12C6+离子束辐照黄花蒿干种子当代生物学效应

利用12C6+重离子束对黄花蒿干种子辐照后,利用发芽率、根长、下胚轴长和株高4个指标研究不同剂量12C6+离子束辐照对黄花蒿的生物学效应。结果表明,随着辐照剂量的增加,黄花蒿的存活率和根长都呈现逐渐降低的趋势,而下胚轴长先上升后下降,株高总体呈现下降的趋势,但在60和90 Gy同时存在矮化与增高的植株。利用SRAP （sequence related amplified polymorphism）技术对辐照后M1代的黄花蒿植株进行研究,结果表明对照组和处理组之间的差异体现为特异性条带的变化。综合分析表明,12C6+的重离子辐照黄花蒿干种子可以产生显著的当代损伤效应,同时引起植物DNA的多态性变化。     

PIIID复合强化处理轴承钢表面TiN膜层的XPS表征

用等离子体浸没离子注入与沉积(PIIID)复合强化新技术在AISI52100轴承钢基体表面成功合成了硬而耐磨的氮化钛薄膜。膜层表面的化学组成和相结构分别用X射线衍射(XRD)和X射线光电子能谱(XPS)表征;膜层表面的原子力显微镜(AFM)形貌显示出TiN膜结晶完整,结构致密均匀。XRD测试结果表明,TiN在(200)晶面衍射峰最强,具有择优取向。Ti(2p)的XPS谱峰泰勒拟合分析揭示出,Ti(2p_1/2)峰和Ti_2p3/2峰均有双峰出现,表明氮化物中的Ti至少存在不同的化学状态;N(1s)的XPS谱峰在396.51, 397.22和399.01 eV附近出现了三个分峰,分别对应于TiNO_y,TiN和N—N键中的氮原子。结合O(1s)的XPS结果,证实膜层中除生成有稳定的TiN相外,还有少量钛的氧化物和未参与反应的单质氮。整个膜层是由TiN,TiO₂,Ti—O—N化合物和少量单质氮组成的复合体系。     

The effects of xenon ion irradiation on the photoluminesce behavior of poly(p-cresolformaldeyde)/diazonaphtoquinone thin films

In the present paper, we investigate the origin of photoluminescence (PL) and the changes in the optical properties: refractive index and absorption coefficient, in poly(p-cresolformaldeyde) and diazonaphtoquinone thin films irradiated with Xe ions. Films 400 nm thick have been irradiated with 800 keV Xe²⁺ ions in a fluence range from 10¹³ to 6 × 10¹⁵ Xe cm⁻². The structural modifications were followed by the techniques of nuclear reaction analysis, elastic recoil detection analysis, Rutherford backscattering, Fourier transform infrared and Raman spectroscopies. The PL behavior was characterised with 488 nm excitation wavelength. The pristine films show emission with maxima of the main bands located at 635, 720 and 830 nm. For fluences up to 10¹⁴ Xe cm⁻², the photoluminescence intensity increases with the irradiation fluence. The chain mobility lowering, characterized by the crosslinked structure, explains this behavior in organic systems. Other possible contribution for increasing of PL intensity, at these fluences, is the presence of oxygen trapped in the polymer chains by the dangling bonds. At intermediate and higher fluences, the photoluminescence starts to decrease. At fluences higher than 10¹⁴ Xe cm⁻², irreversible changes of the organic structure occur and they are characterized by large losses of oxygen and hydrogen, transforming the material into amorphous carbon films. The loss of photoluminescent behavior is associated with the light absorption characteristics of the amorphous carbon structure. This conclusion is supported by the observed increase of the refractive indexes and absorption coefficients, obtained in the infrared region, as well as by the Raman results. Also, the effect of irradiation modifying the refractive index in the infrared region suggests the application of these films as waveguide in this region of wavelength.     

Pulsed laser deposition of tungsten and tungsten oxide thin films with tailored structure at the nano- and mesoscale

Nanostructured thin films synthesized by assembling atoms or clusters present a structure characterized by a modulation at the nanoscale and by a large effective area, which can be exploited for the tailoring of specific structural or electronic properties. These systems are appealing for functional applications, e.g. in sensing and catalysis. We have investigated the deposition of tungsten and tungsten oxide thin films with a wide range of morphologies by exploiting nanosecond pulsed laser deposition (PLD) in an inert background atmosphere (He, Ar and Kr). We show that the non-dimensional ratio of the target-to-substrate distance to the time integrated visible plume length, which depends on the gas mass and pressure and on the substrate position, permits to select morphologies ranging from a compact structure with a density similar to bulk, to a film with an open, low density foam-like mesostructure and a high fraction of voids.     

Phase formation by ion beam mixing in the Ti/Si multilayer system

The irradiation effect of 350 MeV Au⁺ ions on Ti/Si multilayers has been studied using Rutherford backscattering spectroscopy, X-ray reflectivity (XRR) and grazing incidence X-ray diffraction (GIXRD). Intermixing effects have been studied as a function of fluences of 0.46 × 10¹⁴, 1.82 × 10¹⁴ and 4.62 × 10¹⁴ cm⁻². Rutherford backscattering spectra (RBS) confirm mixing at the interface. X-ray reflectivity patterns show damage at the interfaces with the absence of a continuous fringe pattern at high fluence doses in comparison to the pristine interface. Mixing leads to titanium di-silicide (TiSi₂) phase formation as a shown by grazing incidence X-ray diffraction patterns. The observed intermixing is attributed to energy deposited by the incident ions in the electronic system of the target. Swift heavy ion irradiation induced intermixing increases with fluence.     

Application of XPS spectral subtraction and multivariate analysis for the characterization of Ar ion beam modified polyimide surfaces

This paper presents results of a detailed X-ray photoelectron spectroscopy (XPS) characterization of complex changes at a polyimide surface resulting from Ar⁺ ion beam modification. The changes in chemical composition in the surface layer lead to formation of a layer that can act as an alignment layer for liquid crystals. The goal of this paper is to report on the result of a combination of spectral subtraction and multivariate analysis for analysis of XPS spectra. Principal component analysis (PCA), applied to curve-fitting results of difference spectra and multivariate curve resolution (MCR), applied to raw spectra, provided consistent results, and allowed for extraction of chemical anisotropy, defining factor in the ion beam (IB) alignment mechanism. This study demonstrated that more detailed chemical information about complex systems can be obtained through application of multivariate analysis to XPS spectra and curve-fits. Further, this approach can be effectively used in the characterization of various complex materials to link chemical structure to their properties.     

Effects of high-energy ion-beam irradiation on structural and optical properties of (Mg0.95Co0.05)TiO3 thin films

We report the structural and optical properties of high-energy ion-beam irradiated Co-doped magnesium titanate thin films. (Mg_0.95Co_0.05)TiO₃ (MCT) thin films were deposited on quartz substrates using radio frequency magnetron sputtering. Subsequently, the films were annealed for crystallinity and were irradiated with 100?MeV Ag ions by varying the ion fluence. The X-ray diffraction patterns of the films before and after the irradiation were refined using the Rietveld refinement and the variations in the lattice parameters were correlated with the ion fluence. Although, annealing of thin films results in an enhancement in refractive index and optical bandgap, the ion fluence induces significant changes in the refractive index and optical bandgap. Atomic force microscopy is employed to study the surface morphology of the films. The impact of ion fluence on structural and optical properties of MCT thin films has been investigated.     

离子束清洗在激光薄膜中的应用

介绍了在激光薄膜中End Hall型离子源离子束清洗的应用。通过实验验证了基片的二次污染和离子束的清洗效果,观测了离子束清洗前后基片的表面形貌变化。研究了用离子束清洗基片时对薄膜抗激光损伤阈值的作用。分析了用离子束清洗基片时其基片表面的性质,如清洁度、表面能、接触角、表面形貌的变化机理。指出了杂质微粒的去除和附着力的增加是如何使薄膜抗激光损伤阈值显著提高的。     

Swift heavy ion beam mixing at V/Si interface

Vanadium silicides are of increasing interest because of applications in high temperature superconductivity and in microelectronics as contact materials due to their good electrical conductivity. In the present work ion beam induced mixing at Si/V/Si interface has been investigated using 120 MeV Au ions at 1 × 10¹³ to 1 × 10¹⁴ ions/cm² fluence at room temperature. V/Si interface was characterized by Grazing Incidence X-Ray Diffraction (GIXRD), Atomic Force Microscopy (AFM), Rutherford Backscattering Spectrometry (RBS) and Cross-sectional Transmission Electron Microscopy (XTEM) techniques before and after irradiation. It was found that the atomic mixing width increases with ion fluence. GIXRD and RBS investigations confirm the formation of V₆Si₅ silicide phase at the interface at the highest ion irradiation dose.     

Characterization of hydrogenated amorphous carbon thin films by end-Hall ion beam deposition

Pure hydrogenated amorphous carbon (α-C:H) and nitrogen doped hydrogenated amorphous carbon (α-C:H:N) thin films were prepared using end-Hall (EH) ion beam deposition with a beam energy ranging from 24 eV to 48 eV. The composition, microstructure and mechanical properties of the films were characterized by Fourier transform infrared spectroscopy (FTIR), X-ray photoelectron spectroscopy (XPS), Raman spectroscopy, scanning probe microscopy (SPM), and nano-scratch tests. The films are uniform and smooth with root mean square roughness values of 0.5-0.8 nm for α-C:H and 0.35 nm for α-C:H:N films. When the ion energy was increased from 24 eV to 48 eV, the fraction of sp³ bonding in the α-C:H films increased from 36% to 55%, the hardness increased from 8 GPa to 12.5 GPa, and the Young's modulus increased from 100 GPa to 130 GPa. In the α-C:H:N films, N/C atomic ratio, the hardness and Young's modulus of the α-C:H:N films are, 0.087, 15 and 145 GPa, respectively. The results indicate that both higher ion energy and a small amount of N doping improve the mechanical properties of the films. The results have demonstrated that smooth and uniform α-C:H and α-C:H:N films with large area and reasonably high hardness and Young's modulus can be synthesized by EH ion source.     

Formation of biaxial texture in metal films by selective ion beam etching

The formation of in-plane texture via ion bombardment of uniaxially textured metal films was investigated. In particular, selective grain Ar ion beam etching of uniaxially textured (0 0 1) Ni was used to achieve in-plane aligned Ni grains. Unlike conventional ion beam assisted deposition, the ion beam irradiates the uniaxially textured film surface with no impinging deposition flux. The initial uniaxial texture is established via surface energy minimization with no ion irradiation. Within this sequential texturing method, in-plane grain alignment is driven by selective etching and grain overgrowth. Biaxial texture was achieved for ion beam irradiation at elevated temperature.