Theoretical study of the structural properties of SiC(001)—Si-terminated surface and the formation of its STM images

We present theoretical study of structural and electronic properties of SiC(001)-p(2 × 1)-Si-terminated surface and the formation of its STM images. Ab initio calculations independently performed with the use of plane-wave and local-orbital basis have shown that the structure of this surface is built up by long symmetric silicon dimers, which agrees with the results of previous ab initio studies done by other authors. STM simulations show that the variation of the tunneling current along substrate surface very well reproduces the localization properties of occupied and unoccupied surface states (π, π*). We have found that the tensile stress applied along dimers axis causes the buckling of surface dimers and transfer of the charge between dimers atoms. This result suggests that the buckling of silicon surface dimers observed in LEED measurements might be caused by external stress. Presented at the X-th Symposium on Suface Physics, Prague, Czech Republic, July 11–15, 2005.     

Vibrational states of a cobalt dimer on the (111) and (001) copper surfaces

The results of calculations of the total (lateral and vertical) relaxation of the (001) and (111) copper surfaces in the presence of a small cluster of cobalt adatoms, local vibrational density of states and polarizations of these states are presented. The calculations were performed using the atomic interaction potentials in a tight binding approximation. An analysis of the results obtained showed that the presence of a cobalt dimer gives rise to modification of the vibrational states of the copper surface and generation of new modes localized both on the adatoms of the cluster and the surface atoms of the substrate. The revealed anisotropy of surface relaxation along [001] results in deformation of atomic bonding and splitting of the vibrational modes of the dimer. The lifetimes of the vibrational states of the dimer are found to be nearly equal for both surfaces under study, with a frequency shift being however observed. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 12, pp.73–78, December, 2008.     

Azobenzene-functionalized alkanethiols in self-assembled monolayers on gold

Self-assembled monolayers (SAMs) of 4-trifluoromethyl-azobenzene-4′-methyleneoxy-alkanethiols (CF₃– C₆H₄–N=N–C₆H₄–O–(CH₂) _n –SH on (111)-oriented poly-crystalline gold films on mica were examined by X-ray photoelectron spectroscopy (XPS) and X-ray absorption spectroscopy (XAS). The spectra are analyzed with the help of density-functional-theory calculations of the isolated molecule. Only one doublet is detected in the sulphur 2p spectra of the investigated SAMs, consistent with a thiolate bond of the molecule to the gold surface. The C 1s XP spectra and the corresponding XAS π ^* resonance exhibit a rich structure which is assigned to the carbon atoms in the different chemical surroundings. Comparing XPS binding energies of the azobenzene moiety and calculated initial-state shifts reveals comparable screening of all C 1s core holes. While the carbon 1s XPS binding energy lies below the π ^*-resonance excitation-energy, the reversed order is found comparing core ionization and neutral core excitation of the nitrogen 1s core-hole of the azo group. This surprising difference in core-hole binding energies is interpreted as site-dependent polarization screening and charge transfer among the densely packed aromatic moieties. We propose that a quenching of the optical excitation within the molecular layer is thus one major reason for the low trans to cis photo-isomerization rate of azobenzene in aromatic-aliphatic SAMs.     

Reconstruction dependence of the etching and passivation of the GaAs(001) surface

The microscopic nature of the selective interaction of iodine with an As- and Ga-stabilized GaAs(001) surface has been investigated by the photoelectron emission and ab initio calculations. The adsorption of iodine on the Ga-stabilized (4 × 2)/c(8 × 2) surface leads to the formation of the prevailing chemical bond with gallium atoms; to a significant redistribution of the electron density between the surface Ga and As atoms; and, as a result, to a decrease in their binding energy. Iodine on the As-stabilized (2 × 4)/c(2 × 8) surface forms a bond predominantly with surface arsenic atoms. Such a selective interaction of iodine with the reconstructed surfaces gives rise to the etching of the Ga-stabilized surface and the passivation of the As-stabilized surface; this explains the layer-by-layer (“digital”) etching of GaAs(001) controlled by the reconstruction transitions on this surface.     

Valence band photoemission from in-situ grown GaAs(100)-c(4 × 4)

The electron structure of GaAs(100)-c(4 × 4) has been studied by means of angular-resolved photoelectron spectroscopy for photon energies (20–40) eV. The sample was prepared by molecular beam epitaxy in-situ at the BL41 beamline of the MAX I storage ring of the Max-lab in Lund. Photon energy variation helped in separating dispersing bulk features from nondispersing surface features in the energy distribution curves recorded at normal emission. Two sets of peaks were related to bulk transitions from the two topmost E(k _⊥) branches of the valence band of GaAs and one more set came from the surface state in the center of the 2D Brillouin zone. Good agreement was found between experimental bulk dispersion branches and theoretical calculations based on realistic final state dispersion. The surface state peak, hardly visible at 20 and 22 eV photon excitations, gets clearly enhanced at higher excitation energies. In contrast to earlier measurements of this kind, two major differences have been found: (i) clearly developed surface state peak just below the top of the v alence band, (ii) absence of a large peak in the electron energy distribution at around −6.5eV below the valence band top. Presented at the X-th Symposium on Suface Physics, Prague, Czech Republic, July 11–15, 2005.     

低温下Cu13团簇负载于Cu(001)表面上结构变化的分子动力学研究

应用分子动力学方法研究温度为10和50 K时具有二十面体结构的Cu13团簇以不同接触条件与Cu(001)表面结合后的结构变化,原子间的相互作用势采用Johnson的嵌入原子方法模型.通过基于原子密度分布函数的分析表明,负载团簇与表面的结合能主要受团簇与载体相接触的最低层原子数及这些原子所具有的不同几何构型影响,同时更高层的原子呈现出不同的几何结构.温度为10 K时,负载团簇的初始位置对团簇几何结构和结合能影响较大.     

Chemisorption of Fe on Au-passivated Si（001） surface

The chemisorption of one monolayer of Fe atoms on a Au-passivated Si(001) surface is studied by using the self-consistent tight-binding linear muffin-tin orbital method. The Fe adatom chemisorption on an ideal Si(001) surface is also considered for comparison. The chemisorption energy and layer projected density of states for a monolayer of Fe atoms on Au-passivated Si(001) surface are calculated and compared with that of the Fe atoms on an ideal Si(001) surface. The charge transfer is investigated. It is found that the most stable position is at the fourfold hollow site for the adsorbed Fe atoms, which might sit below the Au surface. Therefore there will be a Au－Fe mixed layer at the Fe/Au－Si(100) interface. It is found that the adsorbed Fe atoms cannot sit below the Si surface, indicating that a buffer layer of Au atoms may hinder the intermixing of Fe atoms and Si atoms at the Fe/Au－Si(001) interface effectively, which is in agreement with the experimental results.     

低温下Cu13团簇负载于Cu(001)表面上结构变化的分子动力学研究

应用分子动力学方法研究温度为10和50 K时具有二十面体结构的Cu₁₃团簇以不同接触条件与Cu（001）表面结合后的结构变化,原子间的相互作用势采用Johnson的嵌入原子方法模型.通过基于原子密度分布函数的分析表明,负载团簇与表面的结合能主要受团簇与载体相接触的最低层原子数及这些原子所具有的不同几何构型影响,同时更高层的原子呈现出不同的几何结构.温度为10 K时,负载团簇的初始位置对团簇几何结构和结合能影响较大. 关键词： 分子动力学 团簇 表面 计算机模拟     

Fe clusters on Ni and Cu: size and shape dependence of the spin moment

We present ab-initio calculations of the electronic structure of small Fe clusters (1–9 atoms) on Ni(001), Ni(111), Cu(001) and Cu(111) surfaces. Our focus is on the spin moments and their dependence on cluster size and shape. We derive a simple quantitative rule that relates the moment of each Fe atom linearly to its coordination number. Thus, for an arbitrary Fe cluster the spin moment of the cluster and of the individual Fe atoms can be readily found if the positions of the atoms are known. PACS 75.75.+a; 75.70.-i; 73.22.-f     

The invar effect and phase transitions in Cs2ZnI4 crystals

An in situ x-ray diffraction study of Cs₂ZnI₄ crystals performed in the 4.2–300 K temperature range is reported. The lattice parameter measurements have revealed three anomalies corresponding to phase transitions. The thermal expansion coefficient along the c axis was found to vanish in the region of incommensurate and commensurate modulated phases, 120–96 K (the invar effect). A possible crystallographic model relating modulated atomic displacements to the invar effect is discussed. Fiz. Tverd. Tela (St. Petersburg) 41, 137–142 (January 1999)     

Cu/N表面沉积共掺杂TiO_2光催化剂作用机理的理论研究

本文采用基于周期性密度泛函理论研究了Cu/N表面沉积共掺杂对锐钛矿相TiO2(001)面的修饰作用.计算了Cu在不同位置掺杂TiO2(101)面和(001)面的形成能,并在此基础上计算N不同位置掺杂TiO2(001)面及Cu/TiO2(001)面的形成能,通过形成能的比较获得了表面共掺杂的最优化结构.在此基础上计算了最稳定结构的能带结构及态密度,并与S单掺杂TiO2(001)面最稳定结构进行了对比.通过对结果的分析发现:Cu/N在(001)表面的沉积共掺杂有效降低了TiO2的禁带宽度,并在表面形成CuO2相,更利于提高其光催化活性.     

Features of the structure and properties of β-FeSi<Subscript>2</Subscript> nanofilms and a β-FeSi<Subscript>2</Subscript>/Si interface

The electronic, geometric, and magnetic structure of nanofilms of the β phase of iron disilicide FeSi₂ with the (001), (100), and (010) surfaces have been simulated through density functional calculations. A substantial reconstruction of the (001) surface terminated with silicon atoms has been observed, which was accompanied by an increase in the surface symmetry and appearance of “squares” of silicon atoms. Analysis of the electron density of states (DOS) and spin DOS projected on the contributions of layers of atoms (LSDOS) indicates that all plates have metallic properties. The main contribution near the Fermi level comes from the surface iron layers and it decreases rapidly with an increase in the distance from the surface of the plate. Analysis of the calculated effective magnetic moments of atoms shows that the surface layers in the plates have a significant magnetic moment, in particular, iron layers on the (001) surface (1.89 μ_B/atom). The moments of atoms decrease rapidly with an increase in their distance from the surface. The electron and geometric regions of a (001)Si/FeSi₂ interface have been studied. Analysis of the LSDOS shows that the surface conducting state mainly determined by the contribution from the near-surface silicide layers is implemented in this region. The possibility of the formation of the perfect and sharp Si/FeSi₂ interface has been demonstrated.     

Optical bistability of a thin layer of a substance with quasiresonance polarizability components

Optical-bistability conditions for a thin (smaller than the wavelength of the acting laser radiation) surface layer of resonance atoms are calculated with allowance for the influence of the polarizing fields of transitions adjacent to the resonance one and allowed in the electrodipole approximation on the transmissivity of the medium of the layer. It is noted that the change in the threshold bistability characteristics is due to the influence of the self-modulation broadening of the line of the laser field occurring in the thin resonancepolarized layer on the effective level of its absorption. Institute of Applied Optics, National Academy of Sciences of Belarus, 11, Byalynitskii-Birulya Str., Mogilev, 212793, Belarus. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 66, No. 5, pp. 661–665, September–October, 1999.     

Measurements of total cross sections for positron-K and-Rb scattering

A modification of the apparatus that we have been using to measure absolute total cross sections (Q _T′s) for positron and electron scattering by alkali metal atoms has enabled us to more easily obtainQ _T′s at low energies (<10 eV). Our positron-K and-RbQ _T measurements now extend from 1 to 98 eV and we have made the correspondingQ _T measurements for electrons in the same system using the same technique (a beam transmission technique). Our measured positron-K and-RbQ _T values show a peak in the vicinity of 6 eV and decrease substantially as the positron energy is reduced below 6 eV, in sharp contrast to the results obtained in recent 5-state close-coupling approximation calculations. At higher energies (above 10 eV), we have found that the same calculations are in quite good agreement with our measured positron-K and-RbQ _T′s. Our measurements of the correspondingQ _T′s for electrons below 10 eV do not show a peak, but rather continue to increase as the energy is decreased.     

Influence of the Stark effect on multiphoton ionization of atoms when the dynamic polarizability depends strongly on the laser frequency

The influence of the Stark effect on multiphoton ionization of Ba atoms under conditions when the dynamic polarizability depends strongly on the frequency of the laser radiation is investigated. It is found that for some electric field strengths ε of the laser radiation this effect gives rise to resonance peaks in the Ba⁺ ion yield as a function of the laser radiation frequency at frequencies corresponding to single-photon transitions between the excited states. These frequencies can differ substantially from the frequencies corresponding to the conventional multiphoton excitation of these states from the ground states of the atoms. Peaks in the ion yield as a function of ε behave differently from the conventional Stark effect—their position on the frequency scale does not depend strongly on ε. The conditions under which such an induced resonance structure appears are determined. Zh. éksp. Teor. Fiz. 113, 499–512 (February 1998)     

Differential elastic cross-sections of excited exotic hydrogen atoms

Differential cross-sections for the elastic scattering of excited exotic hydrogen atoms by hydrogenic atoms are calculated for the first time. The calculations are performed for exotic atoms (μ a,π a; a=p,d,t) in the states with the principal quantum numbers n=2-10 at relative motion energies E=0.001-15 eV and at scattering angles ϑ =0–180^00B0;. This revised version was published online in August 2006 with corrections to the Cover Date.     

Ni(111)表面C原子吸附的密度泛函研究

基于密度泛函理论的第一性原理计算,对过渡金属Ni晶体与Ni (111)表面的结构和电子性质进行了研究, 并探讨了单个C原子在过渡金属Ni (111)表面的吸附以及两个C原子在Ni(111)表面的共吸附. 能带和态密度计算表明, Ni晶体及Ni (111)表面在费米面处均存在显著的电子自旋极化. 通过比较Ni (111)表面各位点的吸附能,发现单个C原子在该表面最稳定的吸附位置为第二层Ni原子上方所在的六角密排洞位, 吸附的第二个C原子与它形成碳二聚物时最稳定吸附位为第三层Ni原子上方所在的面心立方洞位. 电荷分析表明,共吸附时从每个C原子上各有1.566e电荷转移至相邻的Ni原子, 与单个C原子吸附时C与Ni原子间的电荷转移量(1.68e)相当. 计算发现两个C原子共吸附时在六角密排洞位和面心立方洞位的磁矩分别为0.059μ_B和 0.060μ_B,其值略大于单个C原子吸附时所具有的磁矩(0.017μ_B).     

Electron energy-loss spectroscopy in the low-loss region as a characterization tool of electrode materials

Energy losses below 100 eV are by far less exploited than higher losses in electron energy-loss spectroscopy. Two new examples are given to illustrate the characterization possibilities offered by spectra in this energy range. Typical materials that could be used as electrodes in electrochemical cells were chosen as application cases. Through the use of calculations based on density functional theory, we first demonstrate that the first peak present at the lithium K edge in Li _x TiP₄ can give access to the precise localisation of inserted Li atoms in the f.c.c. structure. In particular, different tetrahedral sites could be differentiated according to their distance to the Ti site. Secondly, calculations of valence electron energy-loss spectra of perovskite materials indicate that a characteristic peak for regular perovskite (Pm m space group) exists in the 10–15 eV range. The high sensitivity of this peak to the distortion of the octahedron arrangements is also demonstrated. Paper presented at the 11th EuroConference on the Science and Technology of Ionics, Batz-sur-Mer, Sept. 9–15, 2007.     

Determination of the polarization of deuterium atoms following optical orientation

The redistribution of the electronic polarization in deuterium atoms is analyzed theoretically and the various polarization moments are shown to influence the magnetic resonance signal of deuterium. The analysis gives expressions that relate the amplitudes of the magnetic resonance signals for various Zeemann sublevels of the D atom to the electronic and nuclear polarizations of these atoms and their nuclear alignment. Experimental data on the optical orientation and spin exchange in a D-Cs mixture are used to determine the electronic and nuclear orientation and nuclear alignment of the D atoms, which are found to be 〈S _z〉=0.1, 〈I _z〉=0.27, and 〈Q _zz=0.027. Zh. Tekh. Fiz. 67, 22–26 (January 1997)     

Electromagnetically induced transparency in Λ-system involving D 2 line of Rb atoms confined in sub-micron columns

The effect of electromagnetically induced transparency (EIT) in a Λ-system formed by rubidium atoms contained in thin (10–60 μm) and extremely thin (0.3–5 μm) cells was studied experimentally. It was found that parameters of the EIT resonance degrade slowly in the case where the frequency of the coupling laser is in resonance with the D ₂ transition of rubidium, which enabled the registration of the EIT resonance in a record thin cell with a thickness of L = 390 nm. The specific features of EIT in extremely thin cells reveal themselves when the coupling laser has a frequency detuning Δ from the atomic transition. In this case, the width of the EIT resonance rapidly increases upon an increase in Δ at fixed L (an opposite effect takes place in centimeter-scale cells). It is shown that the width of the EIT resonance is inversely proportional to L in the case of fixed large detuning Δ. The nearly tenfold broadening of the EIT resonance for large values of detuning Δ is caused by the influence of atomic collisions with cell windows on dephasing rate of coherence. The expressions that allow the estimation of the EIT-resonance width for various values of detuning Δ and small values of thickness L are found.