角分辨飞行时间法研究GaAs(100)表面蚀刻反应动力学

采用探测室可转动的分子束实验装置,研究了氯分子束与GaAs(100)表面热反应和紫外激光诱导反应的动力学.结果表明,热反应的主要产物为GaCl~3, 其角分布可用cos^2^.^3θ函数拟合.对于紫外(355nm)激光诱导反应,由角分辨的飞行时间(TOF)法测得主要产物为GaCl等,它们的通量角分布须用双余弦加和公式(c~1cosθ+c~2cos^nθ)拟合,表示产物粒子在表面法线方向明显聚集,而且由TOF 谱求得粒子的动能在表面法线方向最大. 这种明显的聚集现象可以由激光诱导的粒子在表面附近发生碰撞效应来解释     

砷化镓半导体表面自然氧化层的X射线光电子能谱分析

用X射线光电子能谱(XPS)，测量了Ga3d和As3d光电子峰的结合能值，指认了砷化镓(GaAs)晶片表面的氧化物组成，计算了表面氧化层的厚度，定量分析了表面的化学组成；比较了几种不同的砷化镓晶片表面的差异。结果表明：砷化镓表面的自然氧化层主要由Ga2O3、As2O5、As2O3和单质As组成，表面镓砷比明显偏离理想的化学计量比，而且，氧化层的厚度随镓砷比的增大而增加；溶液处理后，砷化镓表面得到了改善。讨论了可能的机理。     

Bi3GaS5]2[Ga3Cl10]2[GaCl4]2·S8 containing heterocubane-type [Bi3GaS5]2+, star-shaped [Ga3Cl10]-, monomeric [GaCl4]- and crown-like S8

By reaction of elemental bismuth, sulfur, bismuth(III) chloride and gallium(III) chloride in the ionic liquid (BMIm)Cl (BMIm: 1-butyl-3-methylimidazolium), [Bi(3)GaS(5)](2)[Ga(3)Cl(10)](2)[GaCl(4)](2)·S(8) is obtained as red transparent crystals. According to X-ray structure analysis based on single crystals, the title compound crystallizes with triclinic lattice symmetry and is composed of heterocubane-type [Bi(3)GaS(5)](2+) cations, trimeric star-shaped [Ga(3)Cl(10)](-) anions with three (GaCl(4)) tetrahedra sharing a single central chlorine atom, monomeric [GaCl(4)](-) tetrahedra and neutral, crown-shaped S(8)-rings. Here, the heterocubane [Bi(3)GaS(5)](2+) as well as the star-shaped [Ga(3)Cl(10)](-) are observed as building units for the first time. [Bi(3)GaS(5)](2)[Ga(3)Cl(10)](2)[GaCl(4)](2)·S(8) is further characterized by X-ray powder diffraction as well as by thermogravimetry/differential thermal analysis.     

High-resolution X-ray photoelectron spectroscopy of chlorine-terminated GaAs(111)A surfaces

Oxide-terminated and Cl-terminated GaAs(111)A surfaces have been characterized in the As and Ga 3d regions by high-resolution, soft X-ray photoelectron spectroscopy. The Cl-terminated surface, formed by treatment with 6 M HCl(aq), showed no detectable As oxides or As(0) in the As 3d region. The Ga 3d spectrum of the Cl-terminated surface showed a broad, intense signal at 19.4 eV and a smaller signal at 21.7 eV. The Ga 3d peaks were fitted using three species, one representing bulk GaAs and the others representing two chemical species on the surface. The large peak was well-fitted by the bulk GaAs emission and by a second doublet, assigned to surface Ga atoms bonded to Cl, that was shifted by 0.34 eV from the bulk GaAs 3d emission. The smaller peak, shifted by 2.3 eV in binding energy relative to the bulk GaAs Ga 3d signal, is assigned to Ga(OH)3. The data confirm that wet chemical etching allows for the formation of well-defined, Cl-terminated GaAs(111)A surfaces free of detectable elemental As, that can provide a starting point for further functionalization of GaAs.     

Passivation of GaAs nanocrystals by chemical functionalization

The effective use of nanocrystalline semiconductors requires control of the chemical and electrical properties of their surfaces. We describe herein a chemical functionalization procedure to passivate surface states on GaAs nanocrystals. Cl-terminated GaAs nanocrystals have been produced by anisotropic etching of oxide-covered GaAs nanocrystals with 6 M HCl(aq). The Cl-terminated GaAs nanocrystals were then functionalized by reaction with hydrazine or sodium hydrosulfide. X-ray photoelectron spectroscopic measurements revealed that the surfaces of the Cl-, hydrazine-, and sulfide-treated nanocrystals were As-rich, due to significant amounts of As0. However, no As0 was observed in the photoelectron spectra after the hydrazine-terminated nanocrystals were annealed at 350 degrees C under vacuum. After the anneal, the N 1s peak of hydrazine-exposed GaAs nanocrystals shifted to 3.2 eV lower binding energy. This shift was accompanied by the appearance of a Ga 3d peak shifted 1.4 eV from the bulk value, consistent with the hypothesis that a gallium oxynitride capping layer had been formed on the nanocrystals during the annealing process. The band gap photoluminescence (PL) was weak from the Cl- and hydrazine- or sulfide-terminated nanocrystals, but the annealed nanocrystals displayed strongly enhanced band-edge PL, indicating that the surface states of GaAs nanocrystals were effectively passivated by this two-step, wet chemical treatment.     

Some chemical properties of monochlorogallane: decomposition to gallium(I) trichlorogallate(III), Ga(+)[GaCl3H](-), and other reactions

Thermal decomposition of monochlorogallane, [H2GaCl]n, at ambient temperatures releases H2 and results in the formation of gallium(I) species, including the new compound Ga[GaHCl3], which has been characterized crystallographically at 100 K (monoclinic P2(1)/n, a = 5.730(1), b = 6.787(1), c = 14.508(1) A, beta = 97.902(5) degrees ) and by its Raman spectrum. The gallane suffers symmetrical cleavage of the Ga(mu-Cl)2Ga bridge in its reaction with NMe3 but unsymmetrical cleavage, giving [H2Ga(NH3)2](+)Cl(-), in its reaction with NH3. Ethene inserts into the Ga-H bonds to form first [Et(H)GaCl]2 and then [Et2GaCl]2.     

GaAs(100)表面氧化的XPS研究

X-ray photoelectron spectroscopy（XPS）was used to study two different oxidation treatments on the GaAs（100）surface———the thermal oxidation in the air,and the ultraviolet-light oxidation in the UV-ozone. A series of properties including the oxide composition,chemical states,the surface Ga/As atomic ratio and the thickness of the oxide layer grown on GaAs surface were compared. The results indicate that the oxide composition,the surface Ga / As atomic ratio and the thickness of the oxide layer oxide on GaAs surface are different for different oxidation methods. The oxides on GaAs surface grown by thermal oxidation in the air are composed of Ga2O3,As2O5,As2O3 and elemental As;and the Ga/As atomic ratio is drifted off the stoichiometry far away. The Ga/As atomic ratio of oxide layer on GaAs surface is increases with the thickness of oxide. However,the oxides on GaAs surface grown by UV-ozone are made up of only Ga2O3 and As2O3,As2O5 and elemental As are not detected,the Ga/As atomic ratio is close to unity. The thickness of oxide layer on GaAs can be controlled by the UV exposing time. The mechanism of oxidation of GaAs is also discussed. The UV-light radiation not only causes the oxygen molecular excited forming atomic oxygen,but also induces the valence electrons of the GaAs excited from the valence band,and then the reactivity of Ga and As atom increase,and they can easily react with the excited atomic oxygen at the same reactive velocity.     

Characterization of wet‐etched GaAs (100) surfaces

To enable the use of GaAs‐based devices as chemical sensors, their surfaces must be chemically modified. Reproducible adsorption of molecules in the liquid phase on the GaAs surfaces requires controlled etching procedures. Several analytical methods were applied, including Fourier transform infrared spectroscopy (FTIRS) in attenuated total reflection and multiple internal reflection mode (ATR/MIR), high‐resolution electron energy loss spectroscopy (HREELS), X‐ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM) for the analysis of GaAs (100) samples treated with different wet‐etching procedures. The assignment of the different features due to surface oxides present in the vibrational and XPS spectra was made by comparison with those of powdered oxides (Ga₂O₃, As₂O₃ and As₂O₅). The etching procedures here described, namely, those using low concentration HF solutions, substantially decrease the amount of arsenic oxides and aliphatic contaminants present in the GaAs (100) surfaces and completely remove gallium oxides. The mean thickness of the surface oxide layer drops from 1.6 nm in the raw sample to 0.1 nm after etching. However, in presence of light, water dissolution of arsenic oxides is enhanced, and oxidized species of gallium cover the surface. Copyright © 2005 John Wiley & Sons, Ltd.     

Mass spectrometric studies on the decomposition of trialkylgallium on gaas surfaces

The thermal decomposition of trimethylgallium [(CH₃)₃Ga] and triethylgallium [(C₂H₅)₃Ga] on gallium arsenide (GaAs) surfaces was studied under an ultra-high vacuum using mass spectrometry. It was observed that the decomposition process of (CH₃)₃Ga and (C₂H₅)₃Ga depends on the arsenic coverage of the substrate surface. On a (100)-oriented surface, increasing the arsenic coverage basically enhances the decomposition of (CH₃)₃Ga and (C₂H₅)₃Ga to gallium atoms above 350 and 300°C, respectively. The decomposition of (CH₃)₃Ga proceeds by emitting CH₃ radicals. On a surface with low arsenic coverage, the decomposition of (CH₃)₃Ga is imperfect and fewer than three methyl groups of alkylgallium are desorbed. On a (111)B-oriented surface, however, an increase in the surface arsenic coverage suppresses the decomposition of alkylgallium, which is different from the case for a (100) surface.     

Dichlorogallane (HGaCl(2))(2): its molecular structure and synthetic potential

Dichlorogallane (HGaCl(2))(2) is readily prepared from gallium trichloride and triethylsilane in quantitative yield. Its crystal structure has been determined by single crystal X-ray diffraction. In the chlorine-bridged dimers of crystallographically imposed C(2h) symmetry, the terminal hydrogen atoms are in trans positions. In the reaction with 2 equiv of triethylphosphine, the mononuclear complex (Et(3)P)GaHCl(2) is formed. Thermal decomposition of (HGaCl(2))(2) affords hydrogen gas and quantitative yields of "GaCl(2)" as mixed-valent Ga[GaCl(4)]. Treatment of this product with triethylphosphine gives the symmetrical, Ga-Ga-bonded gallium(II) complex [GaCl(2)(PEt(3))](2) with an ethane-type structure and with the phosphine ligands in a single-trans conformation. The corresponding [GaBr(2)(PEt(3))](2) complex is prepared from Ga[GaBr(4)] and has an analogous structure. (Et(3)P)GaCl(3) has been synthesized and structurally characterized as a reference compound.     

The influence of bond flexibility and molecular size on the chemically selective bonding of In2O and Ga2O on GaAs(001)-c(2 x 8)/(2 x 4)

The surface structures formed upon deposition of In2O and Ga2O by molecular beam epitaxy onto the arsenic-rich GaAs(001)-c(2 x 8)/(2 x 4) surface have been studied using scanning tunneling microscopy and density functional theory. In2O initially bonds, with indium atoms bonding to second layer gallium atoms within the trough, and proceeds to insert into or between first layer arsenic dimer pairs. In contrast, Ga2O only inserts into or between arsenic dimer pairs due to chemical site constraints. The calculated energy needed to bend a Ga2O molecule approximately 70 degrees, so that it can fit into an arsenic dimer pair, is 0.6 eV less than that required for In2O. The greater flexibility of the Ga2O molecule causes its insertion site to be 0.77 eV more exothermic than the In2O insertion site. This result shows that although trends in the periodic table can be used to predict some surface reactions, small changes in atomic size can play a significant role in the chemistry of gas/surface reactions through the indirect effects of bond angle flexibility and bond length stiffness.     

Synthesis and characterization of an air-stable gallium hydride, [t-Bu(H)Ga(mu-NEt(2))](2), and related chloride derivatives

The synthesis of [t-Bu(H)Ga(mu-NEt(2))](2) (1) was accomplished by the addition of 4 t-BuLi to [Cl(2)Ga(mu-NEt(2))](2). Evidence suggests that two tert-butyl groups are lost as isobutylene and result in Ga-H bond formation. The gallium hydride 1 is remarkably stable toward ambient air, oxygen, photolysis, and moderate heating; however, in CHCl(3) the hydride is replaced by chloride, producing [t-Bu(Cl)Ga(mu-NEt(2))](2) (2). Compound 1 may also be synthesized by sequential tert-butyl additions to [Cl(2)Ga(mu-NEt(2))](2). A singly substituted tert-butyl dimer, t-Bu(Cl)Ga(mu-NEt(2))(2)GaCl(2) (3), was also isolated, and interconversions between 1, 2, and 3 are described. Compound 1 was tested for utility in the chemical vapor deposition of GaN and produced gallium-rich films at low temperatures (<250 degrees C) with limited nitrogen incorporation due to facile Et(2)NH elimination.     

Wet chemical functionalization of III-V semiconductor surfaces: alkylation of gallium arsenide and gallium nitride by a Grignard reaction sequence

Crystalline gallium arsenide (GaAs) (111)A and gallium nitride (GaN) (0001) surfaces have been functionalized with alkyl groups via a sequential wet chemical chlorine activation, Grignard reaction process. For GaAs(111)A, etching in HCl in diethyl ether effected both oxide removal and surface-bound Cl. X-ray photoelectron (XP) spectra demonstrated selective surface chlorination after exposure to 2 M HCl in diethyl ether for freshly etched GaAs(111)A but not GaAs(111)B surfaces. GaN(0001) surfaces exposed to PCl(5) in chlorobenzene showed reproducible XP spectroscopic evidence for Cl-termination. The Cl-activated GaAs(111)A and GaN(0001) surfaces were both reactive toward alkyl Grignard reagents, with pronounced decreases in detectable Cl signal as measured by XP spectroscopy. Sessile contact angle measurements between water and GaAs(111)A interfaces after various levels of treatment showed that GaAs(111)A surfaces became significantly more hydrophobic following reaction with C(n)H(2n-1)MgCl (n = 1, 2, 4, 8, 14, 18). High-resolution As 3d XP spectra taken at various times during prolonged direct exposure to ambient lab air indicated that the resistance of GaAs(111)A to surface oxidation was greatly enhanced after reaction with Grignard reagents. GaAs(111)A surfaces terminated with C(18)H(37) groups were also used in Schottky heterojunctions with Hg. These heterojunctions exhibited better stability over repeated cycling than heterojunctions based on GaAs(111)A modified with C(18)H(37)S groups. Raman spectra were separately collected that suggested electronic passivation by surficial Ga-C bonds at GaAs(111)A. Specifically, GaAs(111)A surfaces reacted with alkyl Grignard reagents exhibited Raman signatures comparable to those of samples treated with 10% Na(2)S in tert-butanol. For GaN(0001), high-resolution C 1s spectra exhibited the characteristic low binding energy shoulder demonstrative of surface Ga-C bonds following reaction with CH(3)MgCl. In addition, 4-fluorophenyl groups were attached and detected after reaction with C(6)H(4)FMgBr, further confirming the susceptibility of Cl-terminated GaN(0001) to surface alkylation. However, the measured hydrophobicities of alkyl-terminated GaAs(111)A and GaN(0001) were markedly distinct, indicating differences in the resultant surface layers. The results presented here, in conjunction with previous studies on GaP, show that atop Ga atoms at these crystallographically related surfaces can be deliberately functionalized and protected through Ga-C surface bonds that do not involve thiol/sulfide chemistry or gas-phase pretreatments.     

氮化镓生长系统中源区反应的热力学分析和实验研究

本文报道化学气相淀积法生长GaN薄膜材料的Ga-HCl-NH₃载气体系的源区反应热力学分析和实验研究结果.     

Synchrotron radiation-stimulated photochemical reaction and its application to semiconductor processes

Recent results are reviewed on synchrotron radiation (SR)-excited photochemical reaction studies aimed at applications to semiconductor processes. Valence or core electronic excitations induced by SR irradiation and ensuing chemical reactions are classified and characterized by rate equations. Unique material selectivity in etching has been found. SiO₂ has been found to evaporate by SR irradiation and this phenomenon can be applied to the low-temperature surface cleaning of silicon. In the epitaxial growth of Silicon by ultrahighvacuum chemical vapor deposition using Si₂H₆, SR irradiation significantly lowers growth temperature beyond the low-temperature limit of thermal reaction. Lowering of the operating temperature by SR irradiation is especially effective in applications to the atomic layer epitaxial growth of silicon. The layer-by-layer process has been successfully demonstrated, confirming self-limiting adsorption of SiH₂Cl₂ and ensuring surface reactivation by SR irradiation.     

Synchrotron-induced photoemission of GaAs electrodes after electrochemical treatment in aqueous electrolytes

Electrochemically-induced oxidation and reduction reactions of UHV-cleaved GaAs(110) surfaces have been studied after emersion under potential control using high resolution synchrotron-induced photoelectron spectroscopy. High quality spectra of the As and Ga core 3d lines and the valence band region have been obtained. The spectra of the anodic oxide show strong emission of bulk-like Ga(2)O(3) and some As(2)O(3) with the admixture of suboxides and hydroxides. Ga(2)O(3) and As(2)O(3) are cathodically reduced leaving the GaAs surface covered mostly with elemental As, some As-H and remnants of Ga-suboxides and -hydroxides.     

Preparation, characterization, and structural systematics of diphosphane and diarsane complexes of gallium(III) halides

The diphosphane o-C6H4(PMe2)2 reacts with GaX3 (X = Cl, Br, or I) in a 1:1 molar ratio in dry toluene to give trans-[GaX2{o-C6H4(PMe2)2}2][GaX4], the cations of which contain the first examples of six-coordinate gallium in a phosphane complex. The use of a 1:2 ligand/GaCl3 ratio produced [GaCl2{o-C6H4(PMe2)2}][GaCl4], containing a pseudotetrahedral cation, and similar pseudotetrahedral [GaX2{o-C6H4(PPh2)2}][GaX4] complexes are the only products isolated with the bulkier o-C6H4(PPh2)2. On the other hand, Et2P(CH2)2PEt2, which has a flexible aliphatic backbone, formed [(X3Ga)2{mu-Et2P(CH2)2PEt2}], in which the ligand bridges two pseudotetrahedral gallium centers. The diarsane, o-C6H4(AsMe2)2, formed [GaX2{o-C6H4(AsMe2)2}][GaX4], also containing pseudotetrahedral cations, and in marked contrast to the diphosphane analogue, no six-coordinate complexes form; a very rare example where these two much studied ligands behave differently towards a common metal acceptor. The complexes [(I3Ga)2{mu-Ph2As(CH2)2AsPh2}] and [GaX3(AsMe3)] are also described. The X-ray structures of trans-[GaX2{o-C6H4(PMe2)2}2][GaX4] (X = Cl, Br or I), [GaCl2{o-C6H4(PPh2)2}][GaCl4], [GaX2{o-C6H4(AsMe2)2}][GaX4] (X = Cl or I), [(I3Ga)2{mu-Ph2As(CH2)2AsPh2}], and [GaX3(AsMe3)] (X = Cl, Br or I) are reported, and the structural trends are discussed. The solution behavior of the complexes has been explored using a combination of 31P{1H} and 71Ga NMR spectroscopy.     

Convenient synthesis of aluminum and gallium phosphonate cages

The reactions of AlCl 3.6H 2O and GaCl 3 with 2-pyridylphosphonic acid (2PypoH 2) and 4-pyridylphosphonic acid (4PypoH 2) afford cyclic aluminum and gallium phosphonate structures of [(2PypoH) 4Al 4(OH 2) 12]Cl 8.6H 2O ( 1), [(4PypoH) 4Al 4(OH 2) 12]Cl 8.11H 2O ( 2), [(2PypoH) 4Al 4(OH 2) 12](NO 3) 8.7H 2O ( 3), [(2PypoH) 2(2Pypo) 4Ga 8Cl 12(OH 2) 4(thf) 2](GaCl 4) 2..8thf ( 4), and [(2PypoH) 2(2Pypo) 4Ga 8Cl 12(OH 2) 4(thf) 2](NO 3) 2.9thf ( 5). Structures 1- 3 feature four aluminum atoms bridged by oxygen atoms from the phosphonate moiety and show structural resemblance to the secondary building units found in zeolites and aluminum phosphates. The gallium complexes, 4 and 5, have eight gallium atoms bridged by phosphonate moieties with two GaCl 4 (-) counterions present in 4 and nitrate ions in 5. The cage structures 1- 3 are interlinked by strong hydrogen bonds, forming polymeric chains that, for aluminum, are thermally robust. Exchange of the phosphonic acid for the more flexible 4PyCH 2PO 3H 2 afforded a coordination polymer with a 1:1 Ga:P ratio, {[(4PyCH 2PO 3H)Ga(OH 2) 3](NO 3) 2.0.5H 2O} x ( 6). Complexes 1- 6 were characterized by single-crystal X-ray diffraction, NMR, and mass spectrometry and studied by TGA.     

A redox series of gallium(III) complexes: ligand-based two-electron oxidation affords a gallium-thiolate complex

We have prepared a series of gallium(III) complexes of the redox active iminopyridine ligand (IP). Reaction of GaCl(3) with iminopyridine ligand (IP) in the presence of either two or four equivalents of sodium metal resulted in the formation of deep green (IP(-))(2)GaCl (1), or deep purple [(DME)(3)Na][(IP(2-))(2)Ga] (2a), respectively. Complex 1 is paramagnetic with a room temperature magnetic moment of 2.3 μ(B) which falls to 0.5 μ(B) at 5 K. These observations indicate that two ligand radicals comprise a triplet at room temperature which becomes a singlet due to antiferromagnetic coupling at low temperature. Complex 2 is diamagnetic. Cyclic voltammograms recorded on 0.3 M Bu(4)NPF(6) THF solutions of [Na(THF)(6)][(IP(2-))(2)Ga](-) (2b) indicate that oxidation of 2b occurs in two two-electron steps at -1.31 V and -0.54 V vs. SCE. The observation of two-electron redox events indicates that electronic coupling through the gallium(III) center is minimal and that the two IP ligand on 2b are oxidized concurrently. Oxidation of 2 with one equivalent of MeS-SMe afforded the two-electron oxidized product (IP(-))(2)Ga(SMe) (3). This complex has an electronic structure analogous to 1. Accordingly, both 1 and 3 are deep green in color and magnetic susceptibility measurements performed on 3 confirm the triplet character of the complex at room temperature. Electron paramagnetic resonance experiments on 1 and 3 display a quartet signal at g = 2.0 which confirmed the triplet nature of the compounds, and a half field signal consistent with the integer spin state.     

Photoluminescence from Bi(5)(GaCl(4))(3) molecular crystal

Bi(5)(GaCl(4))(3) sample has been synthesized through the oxidation of Bi metal by gallium chloride (GaCl(3)) salt. Powder X-ray diffraction as well as micro-Raman scattering results revealed that, in addition to crystalline Bi(5)(GaCl(4))(3) in the product, an amorphous phase containing [GaCl(4)](-) and [Ga(2)Cl(7)](-) units also exists. The thorough comparison of steady-state and time-resolved photoluminescent behaviors between the Bi(5)(GaCl(4))(3) product and Bi(5)(AlCl(4))(3) crystal leads us to conclude that Bi(5)(3+) is the dominant emitter in the product, which gives rise to the ultrabroad emission ranging from 1 to 2.7 μm. Detailed quantum chemistry calculation helps us assign the observed excitations to some electronic transitions of the Bi(5)(3+) polycation, especially at shorter wavelengths. It is believed that our work shown here is not only helpful to solve the confusions on the luminescent origin of bismuth in other material systems, but also serves to develop novel broadband tunable laser materials.