直流偏置电场下BaTiO3基陶瓷介电常数非线性机理的研究

采用传统固相法制备了Ba0.6Sr0.4TiO3(BST)和BaZrxTi1-xO3(x=0.25,0.3,0.35,0.4)(BZT)陶瓷,并对其在直流偏置电场下的介电常数非线性行为进行了系统、详细的研究.结果表明,基于Devonshire的宏观相变理论(phenomenological theory)提出的公式εr(app)=1/[1+αε3τ(0)E2]1/3和ε(E)=ε1-ε2 E2+ε3E4,均可定量地解释BST体系顺电相的介电常数非线性行为,其中εr(app)表示材料在电场下的介电常数,ε(0)表示不加电场即静态下材料的介电常数,α是非谐性因子,E表示电场强度,ε(E)表示材料在电场下的介电常数,ε1,ε2,ε3分别表示线性、非线性和高阶介电常数.而对于处于铁电相和居里温度附近的BST体系,则需要考虑铁电畴对介电常数非线性的贡献,这种贡献随着外加直流偏置电场强度的增大逐步减小.对于弛豫铁电体BZT体系,即使处于顺电相,也必须考虑由极性微区的冻结与合并引起的介电常数的下降,极性微区对介电常数非线性的贡献随着电场强度和温度的上升而有所下降.     

PbLa(Zr,Sn,Ti)O_3反铁电陶瓷在脉冲电场下的极化与相变行为

在实际应用中,反铁电陶瓷常处于快速变化的脉冲电场下,而传统电滞回线测量时所施加的电场变化速率较慢,并不能真实反映反铁电陶瓷实际应用时的极化和相变行为.本研究建立了反铁电陶瓷脉冲电滞回线测试平台,研究了Pb_(0.94)La_(0.04)[(Zr_(0.52)Sn_(0.48))_(0.84)Ti_(0.16)]O_3反铁电陶瓷在微秒级脉冲电场下的极化和相变行为.研究结果表明,反铁电陶瓷在微秒级脉冲电场下可以发生相变,但其极化强度降低,正向相变电场变高,反向相变电场变低,从而导致其储能特性发生了显著的变化.因此,低频电滞回线并不能真实反映反铁电陶瓷在脉冲电场下的性能,脉冲电滞回线对其应用具有更重要的参考价值.     

Pb(Zr,Sn,Ti)O_3反铁电陶瓷场诱相变性能的改进

为了获得场诱反铁电 (AFEt)—铁电 (FER)相变临界电场Ef 小、电滞ΔE小、场致应变x适当的反铁电陶瓷 ,对Pb(Zr ,Sn ,Ti)O3 采用Ba2 置换Pb2 ,同时在四方反铁电相AFEt—三方铁电FER 相界附近调节Ti/Sn比 ,来控制FER AFEt,AFEt 顺电相 (FEC)之间的相变温度TFA,TC,最终实现了对场诱相变参量 (Ef,ΔE)和反铁电工作温区 (ΔT =TC-TFA)的优化与调节 .获得了ΔE =0 85kV/mm ,Ef=1 6kV/mm ,x =0 1% - 0 2 %可用作开关致动器的新型反铁电陶瓷 .借助于X射线衍射、介电温谱、去极化电流谱、电滞回线等手段得到了这一系统AFEt/FER相界附近的温度 Ti含量相图 .     

(PbBa)(Zr,Sn,Ti)O_3反铁电/弛豫型铁电相界陶瓷的相变与介电、热释电性质

通过对(Pb087Ba01La002)(Zr06TixSn04-x)O3(004≤x≤020)固溶体的介电和偏压热释电性质的研究发现,当Ti含量004≤x≤007时,材料是反铁电四方相,而当009≤x≤020时,材料向弛豫型铁电体转化.在温度Ti含量相图中,x=009附近形成了反铁电铁电顺电三相共存点(Ttr).该点的相变温度最底;对于004≤x≤007的反铁电四方相,低温下呈现介电弛豫特征,并可被外电场诱导为亚稳铁电态,温度升高时,亚稳铁电→反铁电相变,反铁电→顺电相变引起两个热释电流峰,偏置电场下峰位和峰强均发生移动,在温度电场相图中也形成了铁电反铁电顺电三相点.从复杂化合物纳米相分离的观点和晶格动力学出发,讨论了相变与电学性能随Ti含量(x)和外电场(E)变化的物理机理. 关键词： 反铁电/弛豫型铁电相界 介电性能 偏压热释电性质 铁电-反铁电-顺电三相点     

Pb(Zr,Sn,Ti)O3反铁电陶瓷场诱相变性能的改进

为了获得场诱反铁电(AFE_t)—铁电(FE_Ｒ)相变临界电场E_{f小、电滞ΔE小、场致应变x适当的反铁电陶瓷,对Pb(Zr, Sn, Ti)O3采用Ba ^2＋置换Pb^2＋,同时在四方反铁电相AFEt—三方铁电F EＲ相界附近调节Ti/Sn比,来控制FEＲ-AFEt,AFEt关键词： Pb(Zr Sn 3基反铁电陶瓷')" href="#">Ti)O3基反铁电陶瓷 场诱相变 场致应变 掺杂改性}     

先兆型铁电体CaTiO3的第一性原理研究

在广义梯度近似 (GGA)下利用全电势线性化的缀加平面波法 (FPLAPW )计算了钛酸钙 (CaTiO3 )的电子结构 .将实验测得的晶胞体积记为V0 ,计算中所用的晶胞体积记为V .当V/V0 =1.0时 ,Ti离子位移为零相应于总能量低能态 ,钛酸钙不会发生铁电相变 .但如果其体积膨胀 10 % ,则Ti离子的位移将导致能量极小值 .这意味着在立方钛酸钙中有发生铁电相变的趋势 ,表明在钛酸钙中存在着体积诱发的铁电相变 ,即钛酸钙为先兆型铁电体 .态密度在V/V0 =1.1时 ,Tid电子和O(2 ) p电子之间存在强烈的轨道杂化 ,这种杂化是出现铁电性的必要条件 .电场梯度的结果也表明了这一点 .     

反铁电陶瓷的研究和应用

反铁电陶瓷是电子陶瓷中初露头角尚不为人们所十分熟悉的一类新型陶瓷介质.反铁电陶瓷以其新颖的电滞回线与铁电陶瓷相区别(图1).大家知道,铁电陶瓷的特点是具有很高的介电系数 ε(ε峰值可达 104),并且ε与温度t和场强E呈非线性关系,因而在制作小型高介电容和非线性电容方面广泛应用.但铁电陶瓷最大弱点是容易介电饱和,一般当场强超过0.2kV/mm时,ε随E增加而下降.铁电陶瓷介质损耗很大,且剩余极化Pr值很大,一般不宜用作储能介质.反铁电陶瓷ε值与铁电陶瓷相近,ε与t和E亦有一段强非线性关系,这是与铁电陶瓷共同之处.但反铁电陶瓷的最大优…     

低电场下LiNbO3薄膜在非晶衬底上的取向生长

报道了外加低电场和衬底温度对脉冲激光淀积法制备的LiNbO₃薄膜取向的影响.在衬底温度为600℃和外加电场为7V/cm的条件下，在石英玻璃等非晶态衬底上获得了完全(001)取向的LiNbO₃薄膜.在对具有自发极化的LiNbO₃在电场作用下成核生长机制和温度对LiNbO₃自发极化强度的影响进行分析的基础上，给出了低电场诱导铁电薄膜取向生长的物理依据. 关键词：     

时间分辨与偏振红外光谱研究电场诱导下手性反铁电液晶的翻转过程

手性反铁电液晶分子中的各个不同片段、不同基团在电场诱导下展现不同的取向与取向分布.在交变电场的作用下,分子中各个部分的翻转动力学行为也表现的不同.     

铁电单晶Pb(Mg1/3Nb2/3)O3-PbTiO3的高场致应变及其在层叠式驱动器中的应用

通过研究(1-x)Pb(Mg1/3Nb2/3)O3-xPbTiO3 (PMNT)单晶在不同方向、不同组分下高场致应变的特性,确定了〈001〉取向PMNT单晶(29%≤x≤31%)为制作层叠式驱动器的最佳组分范围,这组分的单晶具有高场致应变、低滞后而且性能较稳定的特点.研究结果表明,在保证应变曲线的线性和低滞后的前提下,将近-2kV/cm的负电场能够运用于〈001〉方向的PMNT晶体上. 40层(每片晶片尺寸为7mm×7mm×0.7mm)PMNT层叠式驱动器在电场 -1.5-10kV/cm的驱动下,可以获得38.1μm的纵向位移,负载40N的重量后,位移量减为34μm.     

Coexistence of the relaxor-like and ferroelectric behavior in K1-xLixTaO3

ABSTRACT

The results of low-temperature linear and nonlinear susceptibilities, polarization measurements and the dc electric field dependence of the dielectric properties of the lithium-doped potassium tantalate K_1-xLi_xTaO₃, x = 0.034 (KLT-3.4%Li) solid solution are presented. The coexistence of the relaxor-like and ferroelectric behavior and different mechanisms leading to either of them are discussed. The observed ferroelectric phase transition is of the first-order type with temperature hysteresis. This transition is due to the off-center motions of Ta ions in the octahedral environment of oxygen ions. Clusters of Li⁺ ions produce a relaxor-like behavior and random electric field. This field reduces the depolarization field and allows off-center motions of Ta ions and an appearance of spontaneous polarization.     

Time relaxation of permittivity in [(CH3)2NH2]3CuCl5 crystal under external electric field

Continuation of our previous studies connected with dielectric properties of tris-dimethylammoniumpentachlorocuprate crystal [(CH₃)₂NH₂]₃CuCl₅ crystal under the influence of electric field are presented in this article. We studied the time dependence of the permittivity under the influence of electric field at constant temperatures above T _c. In experiment, slow but significant decrease of permittivity was observed, which can be described with two main relaxation processes. The observed dielectric behavior can be related to the coexistence of phases and slow transition to ferroelectric one through long-time metastable states connected with the presence of incommensurate phase in the studied crystal. The coexistence of phases and slow transition was confirmed from the appearance of induced polarization under external electric field, measured as depolarization current.     

The ferroelectric field effect on the two-dimensional electron gas at LaAlO3/SrTiO3 (001) interface: Insights from first principle simulations

We perform first-principles calculations to explore the possibility of tuning the two-dimensional electron gas at the LaAlO₃/SrTiO₃ (001) interface through BaTiO₃ substrate. A metal-to-insulator transition is found at the interface as the polarization of BaTiO₃ reverses. Through the potential analysis of the LaAlO₃/SrTiO₃/BaTiO₃ superstructure, we find that the intrinsic electric field of LaAlO₃ is significantly suppressed as the polarization points away from the LaAlO₃/SrTiO₃ interface, while it is enhanced with the polarization pointing to the interface. The ferroelectric field control of the intrinsic electric field, and therefore the electronic reconstructions at the interface, originating from the screening of polarization charges, opens the way to the development of novel nanoscale electronic devices.     

Influence of cycling electric polarization on multiferroic behaviors in heterostructural films composed of ferroelectric and ferromagnetic oxides

The CoFe₂O₄/Pb(Zr_0.52Ti_0.48)O₃ bilayer films were prepared by a sol–gel process, and the influence of cycling electric polarization on the multiferroic behaviors of the bilayer films was studied. The ferroelectric polarization hysteresis loops under various choices of magnetic bias were measured by an integrating current method. The results showed that after undergoing cycling electric polarization the ferroelectric polarization of the bilayer films enhanced and the suppression of ferroelectric polarization by external magnetic bias remarkably weakened. Based on the measurements of activation energy and leakage current, we confirmed that the oxygen vacancy migration in the bilayer films occurred during cycling electric polarization. Furthermore, we analyzed the mechanism of the influence of cycling electric polarization on the multiferroic behaviors of the bilayer films and attributed it to the oxygen vacancy migration, which could cause a part of ferroelectric domains to be unpinned from the oxygen vacancies and become more active under electric field and magnetic bias.     

Temperature-dependent ferroelectric and dielectric properties of Bi3.25La0.75Ti3O12 thin films

To investigate temperature-dependent ferroelectric and dielectric properties of ferroelectric films, Bi_3.25La_0.75Ti₃O₁₂ (BLT) thin films were prepared on Pt-coated silicon substrates by pulsed laser deposition. The ferroelectric and dielectric behaviors have been studied in a wide temperature range from 80 K to room temperature. The saturated polarization (P_sat) decreases with decreasing temperature and decreasing electric field, whereas remnant polarization (P_r) shows a more complex temperature dependence. These results, which can be well explained based on a temperature-dependent charged defects-domain wall interaction model, might be helpful for further understanding the domain switching behavior. Based on these results, an alternative way to investigate temperature-dependent ferroelectric fatigue is proposed and experimentally carried out. The measured fatigue rate is found to be linearly dependent on temperature, consistent with the report on Pb(Zr,Ti)O₃ films. Temperature-dependent dielectric measurements of the films further confirm the above explanation.     

Hysteresis phenomena in the course of polarization evolution in a sinusoidal electric field in lead magnesium niobate crystals

The processes of polarization evolution in single crystals of the PbMg_1/3Nb_2/3O₃ model ferroelectric relaxor in a sinusoidal electric field are investigated at temperatures near and above the temperature T _d 0 of destruction of the induced ferroelectric state upon heating in zero electric field. The polarization switching current loops are measured in the ac electric field applied along the 〈111〉 and 〈110〉 pseudocubic directions. The electroluminescence intensity loops are obtained under the combined action of ac and dc electric fields applied along the 〈100〉 direction. In a certain temperature range above T _d 0 and the freezing temperature T _f in lead magnesium niobate, there are electric current anomalies, that correspond to the dynamic formation and subsequent destruction of the ferroelectric macroregions throughout each half-cycle of the ac electric field. The measurements of electroluminescence hysteresis loops demonstrate that the observed depolarization delay (related to the ac electric field amplitude) increases with an increase in the dc electric field and decreases as the ac field amplitude increases. The nature of the observed phenomena is discussed.     

Phonon modes in KH2PO3-type crystals

New infrared reflectivity spectroscopic measurements for polarization of the electric field perpendicular to the ferroelectric axis of KDP in its ferroelectric phase at 7K, are presented and discussed. The optical mode parameters of modes belonging to B₁ and B₂ symmetry are deduced from the experimental infrared reflectivity, together with the fractional number of dipoles pointing in the + c direction.     

Effect of electric-field-assisted thermal treatment on the strain and ferroelectric properties of (100)-oriented ferroelectric Pb(Zr0.52Ti0.48)O3 thin films

Ferroelectric Pb(Zr_0.52Ti_0.48)O₃ thin films were deposited on the Pt/Ti/SiO₂/Si substrate by a sol-gel method. As a direct electric field was applied on the films during thermal treatment, strain behavior and ferroelectric properties have been investigated. X-ray diffraction patterns show that great tensile strain exists nearby the interface of the 250 nm thin film while thermal treatment assisted with direct electric field can obviously relax it. The analysis of hysteresis loops indicates that the remnant polarization increases with the thermal treatment time. These results suggest that electric-field-assisted thermal treatment is an effective way to reduce films' tensile strain through the local plastic deformation in Pt layer and enhance the remnant polarization.     

Effects of oxygen partial pressure on the ferroelectric properties of pulsed laser deposited Ba0.8Sr0.2TiO3 thin films

The Ba_0.8Sr_0.2TiO₃ thin films were grown on the Pt–Si substrate at 700 °C by using a pulsed laser deposition technique at different oxygen partial pressure (PO₂) in the range of 1–20 Pa and their properties were investigated. It is observed that the PO₂ during the deposition plays an important role on the tetragonal distortion ratio, surface morphology, dielectric permittivity, ferroelectric polarization, switching response, and leakage currents of the films. With an increase in PO₂, the in-plane strain for the BST films changes from tensile to compressive. The films grown at 7.5 Pa show the optimum dielectric and ferroelectric properties and also exhibit the good polarization stability. It is assumed that a reasonable compressive strain, increasing the ionic displacement, and thus promotes the in-plane polarization in the field direction, could improve the dielectric permittivity. The butterfly features of the capacitance–voltage (C–V) characteristics and the bell shape curve in polarization current were attributed to the domain reversal process. The effect of pulse amplitude on the polarization reversal behavior of the BST films grown at PO₂ of 7.5 Pa was studied. The peak value of the polarization current shows exponential dependence on the electric field.     

Room temperature ferroelectricity of tetragonally strained SrTiO3 thin films on single crystal Rh substrates

Epitaxial SrTiO₃ thin films were deposited on single crystalline Rh substrates by pulsed laser deposition. The tetragonally stained structure of the SrTiO₃ thin films with a c/a ratio of 1.04 was confirmed by x-ray diffraction experiments. The SrTiO₃ thin films exhibited good ferroelectric properties with a high remanent polarization (2P_r) of 8 μC/cm² and a canonical ferroelectric piezoresponse hysteresis loop at room temperature. We estimated a high activation electric field of about 6.4 MV/cm for domain wall creeping. This activation electric field is higher than that of typical ferroelectric materials such as PbTiO₃.