过渡金属元素Sc、Cr和Mn对Mg2Ge掺杂的第一性原理研究

基于密度泛函理论(DFT)的第一性原理计算,研究了过渡金属元素Sc、Cr和Mn掺杂对Mg₂Ge晶体光、电、磁性质的影响。结果表明,Sc掺杂能使Mg₂Ge的费米能级进入导带,呈n型简并半导体;Cr和Mn掺杂能使Mg₂Ge能带结构和态密度在费米能级附近产生自旋劈裂而形成净磁矩,表现为半金属磁体和稀磁半导体,体系净磁矩均来自杂质原子3d轨道电子及其诱导极化的Ge4p态和Mg2p态自旋电子。与本征Mg₂Ge相比,掺杂体系静态介电常数增大,扩展了吸收光谱,提升了近红外光波段吸收能力。     

Ni 掺杂ZnO纳米线的电子结构与磁性

采用自旋极化密度泛函理论系统研究了Ni掺杂ZnO纳米线的电子结构、磁学和光学性质.磁学性质计算结果显示六种Ni掺杂ZnO纳米线的磁性耦合体系出现了铁磁(FM)、反铁磁(AFM)和顺磁(PM)二种不同的耦合状态.能量计算结果表明Ni原子在纳米线外表面沿[0001]方向替代Zn原子时能量最低,体系的AFM耦合相对稳定,AFM体系表现出金属性.态密度计算结果显示FM耦合在费米能级附近出现了明显的自旋极化现象,发生了强烈的Ni 3d和O 2p杂化效应,掺杂产生的磁矩主要来源于Ni 3d未成对轨道电子和部分O 2p轨道电子的贡献,FM耦合表现出半金属性.另外,光学性质计算结果显示Ni掺杂ZnO纳米线的远紫外吸收峰发生了红移现象,而380 nm附近的近紫外吸收峰发生了明显的蓝移现象,在整个紫外区都表现出了优异的发光性能.以上结果表明Ni掺杂ZnO纳米线是一种很有前途的磁光电子材料.     

O2 dissociative adsorption on the Cu‐, Ag‐, and W‐doped Al(111) surfaces from DFT computation

The O₂ adsorption and dissociation on M‐doped (M = Cu, Ag, W) Al(111) surface were studied by density functional theory. The adsorption energy of adsorbate, the average binding energy and surface energy of Al surface, and the doping energy of doping atom were calculated. All the doped atoms can be stably combined with Al atoms, while being slightly embedded in the surface to a certain depth. The TOP‐type surfaces are the most stable doped surfaces for O₂ adsorption, which is related to the orbital hybridization between the adsorbate and the surface atoms, the electronegativity, and the orbital energy level of the doping atoms. Moreover, the O atoms and doping atoms contribute significantly to the density of states (DOS), especially the O‐p orbital electrons and the d orbital electrons of doping atoms. The degree of O₂ dissociation is related to the doping atoms on Al surfaces, and the doping atoms actually resist the dissociation of O₂. W atoms have the best resistance effect on the O₂ dissociation as compared with Cu and Ag atoms, especially W‐1NN surface, which has both large barrier energy and reaction energy.     

First-principles study of electronic and magnetic properties of Co(n)Mn(m) and Co(n)V(m) (m + n < or = 6) clusters

The electronic and magnetic properties of small Co(n)Mn(m) and Co(n)V(m) (m + n < or = 6) clusters are systematically studied using density functional theory. The results show that Co and V atoms prefer to aggregate in Co-Mn and Co-V clusters, respectively. Significant magnetic moment enhancement in Co-Mn clusters with Mn doping and reduction in Co-V clusters with V doping are found, consistent with experiment results for larger clusters [Phys. Rev. Lett. 2007, 98, 113401]. The results are discussed by analyzing the magnetic coupling type and local magnetic moment on each atoms. Density of states and vertical ionization potentials are calculated and show cluster size dependent behavior.     

Luminescence,Plasmonic, and Magnetic Properties of Doped Semiconductor Nanocrystals

Introducing a few atoms of impurities or dopants in semiconductor nanocrystals can drastically alter the existing properties or even introduce new properties. For example, mid-gap states created by doping tremendously affect photocatalytic activities and surface controlled redox reactions, generate new emission centers, show thermometric optical switching, make FRET donors by enhancing the excited state lifetime, and also create localized surface plasmon resonance induced low energy absorption. In addition, researchers have more recently started focusing their attention on doped nanocrystals as an important and alternative material for solar energy conversion to meet the current demand for renewable energy. Moreover, the electrical and magnetic properties of the host are also strongly altered on doping. These beneficial dopant-induced changes suggest that doped nanocrystals with proper selections of dopant–host pairs may be helpful for generating designer materials for a wide range of current technological needs. How properties relate to the doping of a variety of semiconductor nanocrystals are summarized in this Review.     

g-C3N4碳位掺杂电学及光学性质的分析

使用第一性原理研究了C位掺杂的g-C₃N₄的电学性质和光学性质,掺杂原子为B、P、S. g-C₃N₄有C1位和C2 位两种对称位碳原子,其中在C1 位上的掺杂易于C2 位,掺杂体系也较C2 位稳定. 相比于磷和硫在g-C₃N₄上的掺杂,硼掺杂最易于进行. 掺杂后体系的晶体结构之间差别较大,这与掺杂原子的大小以及电负性有关. 由轨道布居分布可知,掺杂后的硼、磷、硫原子价电子发生了变化,表明掺杂原子发生了杂化,与相邻原子以强的共价键相连. 掺杂原子与被取代的碳原子之间的价电子差异导致了能带的增加. 在原来的体系中,掺杂后的体系出现了一条新的能带,因此导致实际带隙下降,表明了掺杂后的体系导电性能增强. 对纯g-C₃N₄及掺杂g-C₃N₄的光学性质分析表明,g-C₃N₄的光学吸收主要在紫外光区,掺杂磷和硫后对g-C₃N₄的光吸收波长范围无改变,掺杂硼后的g-C₃N₄光吸收不再局限于紫外光区,而且延伸至可见光区和红外光区,并在红外光区有很强的吸收,表明g-C₃N₄掺杂硼后能大大地提高光催化效率. 电子能量损失光谱和光导率谱以及介电常数都佐证了上述观点.     

Continuation calculations of boron- (aluminum-, titanium-, and nickel-) doped La13 clusters

In this work, we have calculated boron-, aluminum-, titanium-, and nickel-doped La13 clusters by DMOL method based on the density-functional theory. Two doping modes are employed: surface and center doping. The boron, aluminum, and nickel atoms prefer to occupy the surface sites while the titanium atom prefers to occupy the center site. The doped La13 clusters with these four kinds of atoms have lower binding energy than pure La13 clusters. The icosahedral isomers are of lower binding energy than cubotahedral and decahedral isomers for La12B(-1), La12Al(-1), and La12Ni, while doping makes the cubotahedral La12Ti stable with a binding energy a little lower than icosahedral La12Ti. There are electronic shell effects in icosahedral La12B(-1) and La12Al(-1). The icosahedral La12B(-1) is promising to be formed during the doped process experimentally. Furthermore, we have also discussed the distorted structures of center doping by bond lengths, density of states, and charge transfers.     

过渡金属掺杂SnO2的电子结构与磁性

采用密度泛函理论及赝势平面波方法, 对未掺杂SnO2以及过渡金属V、Cr、Mn掺杂SnO2的超原胞体系进行了几何优化, 计算了晶格常数、电子结构与磁学性质. 结果表明, 6.25%与12.5%两种掺杂浓度时, 体系的电子自旋和磁学性质没有发生很大的变化; 相对于未掺杂SnO2, 过渡金属掺杂后SnO2中O原子有向过渡金属移动的趋势, 并使得O与掺杂金属之间键长变短; 在V和Cr掺杂后, SnO2具有半金属性质, 而Mn掺杂SnO2没有发现上述性质. 6.25%与12.5%的杂质浓度对自旋和磁矩影响不大, 掺杂产生的磁矩主要来自于过渡金属3d电子态, 且磁矩的大小与过渡金属的电子排布有关. V、Cr、Mn掺杂SnO2后的总磁矩分别为0.94μB、2.02μB、3.00μB. 磁矩主要来源于过渡金属3d轨道的自旋极化, 当O原子出现负磁矩的时候, 还有很小一部分磁矩来源于临近过渡金属的Sn原子.     

基于密度泛函理论分析团簇ConMoS(n=1~5)电子性质、光学性质及磁性

为了从理论层面深入探究团簇Co_nMoS （n=1~5）的电子性质、光学性质及磁性,弄清其内在关联,依据拓扑学原理和密度泛函理论,在B3LYP/def2-TZVP量子化学水平和多个自旋多重度下对该团簇进行结构优化并分析。结果表明：团簇Co_nMoS共有21种稳定构型;通过对NPA （自然布居分析,natural population analysis）电荷、静电势、亲电指数、电离势、光学电负性和折射率等分析得出,金属原子有高概率失去电子,非金属原子相对更容易得到电子,团簇Co₅MoS中的构型5a在最稳定构型中有高的得失电子能力、反应活性和折射率,Co和Mo原子易发生亲核反应,S原子易发生亲电反应;对该团簇自旋布居数、原子磁矩、轨道磁矩和态密度分析发现,该团簇磁性主要由Co原子的d轨道提供,且团簇Co₃MoS表现出了比其它尺寸团簇更为稳定和优异的磁性。最终得出团簇Co₃MoS在磁性方面有较好的表现且构型5a在活性和光学领域有一定的潜力。     

Electronic and magnetic properties of manganese and iron-doped Ga(n)As(n) nanocages (n=7-12)

The electronic and magnetic properties of Mn- or Fe-doped Ga(n)As(n) (n=7-12) nanocages were studied using gradient-corrected density-functional theory considering doping at substitutional, endohedral, and exohedral sites. When doped with one atom, the most energetically favorable site gradually moves from surface (n=7-11) to interior (n=12) sites for the Mn atom, while the most preferred doping site of the Fe atom alternates between the surface (n=7,9,11) and interior (n=8,10,12) sites. All of the ground-state structures of Mn@Ga(n)As(n) have the atomlike magnetic moment of 5mu(B), while the total magnetic moments of the most stable Fe@Ga(n)As(n) cages for each size are about 2mu(B) except for the 4mu(B) magnetic moment of Fe@Ga(12)As(12). Charge transfer and hybridization between the 4s and 3d states of Mn or Fe and the 4s and 4p states of As were found. The antiferromagnetic (AFM) state of Mn(2)@Ga(n)As(n) is more energetically favorable than the ferromagnetic (FM) state. However, for Fe(2)@Ga(n)As(n) the FM state is more stable than the AFM state. The local magnetic moments of Mn and Fe atoms in the Ga(n)As(n) cages are about 4mu(B) and 3mu(B) in the FM and AFM states, respectively. For both Mn and Fe bidoping, the most energetically favorable doping sites of the transition metal atoms are located on the surface of the Ga(n)As(n) cages. The computed magnetic moments of the doped Fe and Mn atoms agree excellently with the theoretical and experimental values in the Fe(Mn)GaAs interface as well as (Ga, Mn)As dilute magnetic semiconductors.     

基于密度泛函理论分析团簇ConMoS(n=1~5)电子性质、光学性质及磁性

为了从理论层面深入探究团簇 Co_nMoS(n=1~5)的电子性质、光学性质及磁性,弄清其内在关联,依据拓扑学原理和密度泛函理论,在B3LYP/def2-TZVP量子化学水平和多个自旋多重度下对该团簇进行结构优化并分析。结果表明：团簇ConMoS共有21种稳定构型;通过对NPA(自然布居分析,natural population analysis)电荷、静电势、亲电指数、电离势、光学电负性和折射率等分析得出,金属原子有高概率失去电子,非金属原子相对更容易得到电子,团簇Co₅MoS中的构型5a在最稳定构型中有高的得失电子能力、反应活性和折射率,Co和Mo原子易发生亲核反应,S原子易发生亲电反应;对该团簇自旋布居数、原子磁矩、轨道磁矩和态密度分析发现,该团簇磁性主要由Co原子的d轨道提供,且团簇Co₃MoS表现出了比其它尺寸团簇更为稳定和优异的磁性。最终得出团簇Co₃MoS在磁性方面有较好的表现且构型5a在活性和光学领域有一定的潜力。     

Magnetic ordering and metal‐atom site preference in tetragonal CrMnAs: Electronic correlation effects

The electronic and magnetic structures of tetragonal, Cu₂Sb‐type CrMnAs were examined using density functional theory. To obtain reasonable agreement with reported atomic and low‐temperature magnetic ordering in this compound, the intra‐atomic electron–electron correlation in term of Hubbard U on Mn atoms are necessary. Using GGA + U, calculations identify four low‐energy antiferromagnetically ordered structures, all of which adopt a magnetic unit cell that contains the same direct Cr Cr and Cr Mn magnetic interaction, as well as the same indirect Mn⋅⋅⋅Mn magnetic interaction across the Cr planes. One of these low‐energy configurations corresponds to the reported case. Effective exchange parameters for metal–metal contacts obtained from SPRKKR calculations indicate both direct and indirect exchange couplings play important roles in tetragonal CrMnAs. © 2018 Wiley Periodicals, Inc.     

Cr、Sn、Co掺杂对层状二维材料MoSi2N4的电子和光学性能的影响(英文)

基于新合成的二维材料MoSi₂N₄(MSN),我们建立了一系列MSN的掺杂模型进行了第一原理计算。首先,我们计算了本征MSN的电子特性,包括其能带结构和态密度。然后我们研究了Cr、Sn和Co掺杂对MSN的电子和光学性质的影响。结果表明,在3种掺杂体系中,Co掺杂体系表现出最低的形成能,这表明Co掺杂体系是最稳定的。通过带隙计算表明,尽管3种掺杂模型都降低了MSN的固有带隙,但却表现出3种不同的电子特性。态密度图也显示,Cr和Co掺杂体系都在导带底(CBM)和价带顶(VBM)附近产生局部尖峰。此外,光学性质的计算中表明,掺杂后体系的光学性质也得到了改善。     

Structural,electronic, and magnetic properties of 3d transition metal doped GaN nanosheet: A first‐principles study

We have performed the first‐principles calculations on the structural, electronic, and magnetic properties of 3d transition‐metal? (Cr, Mn, Fe, Co, and Ni) atoms doped 2D GaN nanosheet. The results show that 3d TM atom substituting one Ga leads to a structural reconstruction around the 3d TM impurity compared to the pristine GaN nanosheet. The doping of TM atom can induce magnetic moments, which are mainly located on the 3d TM atom and its nearest‐neighbor N atoms. It is found that Mn‐ and Ni‐doped GaN nanosheet with 100% spin polarization characters seem to be good candidates for spintronic applications. When two Ga atoms are substituted by two TM dopants, the ferromagnetic (FM) ordering becomes energetically more favorable for Cr‐, Mn‐, and Ni‐doped GaN nanosheet with different distances of two TM atoms. On the contrary, the antiferromagnetic (AFM) ordering is energetically more favorable for Fe‐doped GaN nanosheet. In addition, our GGA + U calculations show the similar results with GGA calculations. © 2016 Wiley Periodicals, Inc.     

Structural,Electronic and Tunable Magnetic Properties of Transition Metal Doped Rh<Subscript>8</Subscript> Cluster from First Principles Calculation

The configurations, electronic and magnetic properties of the Rh₇M (M?=?3d, 4d transition metal) are systematically investigated within the framework of the generalized gradient approximation density-functional theory (DFT-GGA). The results indicated that the ground state structures of Rh₇M (M?=?3d) clusters prefer to a bicapped octahedron configuration, while the Rh₇M (M?=?4d) clusters present a different degree of geometry reconstruction relative to the perfect cubic structure of Rh₈ cluster. In most cases, the doped clusters show relatively higher stability, indicating that impurity atoms could stabilize the pure Rh₈ cluster; the Rh₇M (M?=?3d, 4d) have smaller frontier orbital energy gaps in comparison to the host. The magnetic moments of Rh₇M (M?=?3d, 4d) exhibit a tunable magnetism with range from 3μ_B to 13μ_B and the Fe atom doping enhances the magnetic moment of mixed cluster.     

Density Functional Theory Study on Electronic and Magnetic Properties of Mn-doped (MgO)n (n=2-10) Clusters

We study the geometries, stabilities, electronic and magnetic properties of (MgO)_n (n=2-10) clusters doped with a single Mn atom using the density functional theory with the gener-alized gradient approximation. The optimized geometries show that the impurity Mn atom prefers to replace the Mg atom which has low coordination number in all the lowest-energy MnMg_n-1O_n (n=2-10) structures. The stability analysis clearly represents that the aver-age binding energies of the doped clusters are larger than those of the corresponding pure (MgO)_n clusters. Maximum peaks of the second order energy differences are observed for MnMg_n-1O_n clusters at n=6, 9, implying that these clusters exhibit higher stability than their neighboring clusters. In addition, all the Mn-doped Mg clusters exhibit high total magnetic moments with the exception of MnMgO₂ which has 3.00 μB. Their magnetic be-havior is attributed to the impurity Mn atom, the charge transfer modes, and the size of MnMg_n-1O_n clusters.     

Theoretical study of the geometric and electronic structure of neutral and anionic doped silver clusters, Ag5X with X = Sc, Ti, V, Cr, Mn, Fe, Co, and Ni

Density functional theory (DFT) has been applied to investigate the low-lying electronic states of neutral and anionic transition metal doped silver clusters Ag₅X^0,− with X = Sc, Ti, V, Cr, Mn, Fe, Co, and Ni using the B3LYP functional with the Stuttgart SDD basis sets. The structural features, frontier orbital energy gaps (HOMO and LUMO), vertical detachment energies, and vertical and adiabatic electronic affinities are evaluated. For all doped silver clusters, both in neutral and anionic states, two-dimensional and three-dimensional low-energy isomers are found to coexist. For neutral clusters, dopant Sc, Ti, V, and Mn atoms largely decrease the frontier orbital energy gaps, while they are markedly increased by Sc and Fe atoms in the anionic clusters. A completely quenched dopant magnetic moment is found in Ag₅Sc, while high spin magnetic moments are located on the other dopant atoms in Ag₅X^0,−.     

The calculated magnetic and optical properties of (Mn,N) Co-doped ZnS

Based on the density functional pseudo-potential method, the density of states, the magnetic and the optical properties of the Mn-doped and (Mn,N) co-doped ZnS are calculated. The calculation results indicate that (Mn,N) co-doping can realize more effective p-type doping than Mn-doped does. Both Mn-doping and (Mn,N) co-doping exhibit spin polarization states, which can realize 100% spin polarization of the carrier injection by transfer of effective masses. Compared with that of pure ZnS, the optical absorption edges of both Mn-doped and (Mn,N) co-doped ZnS make red shifts. The peak value of the reflection coefficient increases and the main reflection peaks move to the lower energy after doping. Meanwhile, the location of peaks move toward the direction of lower energy which corresponds to the sharp decline of reflection spectrum.     

First-Principles Study of Magnetism in Transition Metal Doped Na0.5Bi0.5TiO3 System

The origins of magnetism in transition-metal doped Na_0.5Bi_0.5TiO₃ system are investigated by ab initio calculations. The calculated results indicate that a transition-metal atom substitution for a Ti atom produces magnetic moments, which are due to the spin-polarization of transition-metal 3d electrons. The characteristics of exchange coupling are also calculated, which shows that in Cr-/Mn-/Fe-/Co-doped Na_0.5Bi_0.5TiO₃ system, the antiferromagnetic coupling is favorable. The results can successfully explain the experimental phenomenon that, in Mn-/Fe-doped Na_0.5Bi_0.5TiO₃ system, the ferromagnetism disappears at low temperature and the paramagnetic component becomes stronger with the increase of doping concentration of Mn/Fe/Co ions. Unexpectedly, we find the Na_0.5Bi_0.5Ti_0.67V_0.33iO₃ system with ferromagnetic coupling is favorable and produces a magnetic moment of 2.00 μB, which indicates that low temperature ferromagnetism materials could be made by introducing V atoms in Na_0.5Bi_0.5TiO₃. This may be a new way to produce low temperature multiferroic materials.     

Electronic and magnetic properties of all 3d transition‐metal‐doped ZnO monolayers

Stable geometries, electronic structures, and magnetic properties of the ZnO monolayer doped with 3d transition‐metal (TM) (Sc, Ti, V, Cr, Mn, Fe, Co, Ni, and Cu) atoms substituting the cation Zn have been investigated using first‐principles pseudopotential plane wave method within density functional theory (DFT). It is found that these nine atomic species can be effectively doped in the ZnO monolayer with formation energies ranging from ?6.319 to ?0.132 eV. Furthermore, electronic structures and magnetic properties of ZnO monolayer can be modified by such doping. The results show that the doping of Cr, Mn, Fe, Co, Ni, and Cu atoms can induce magnetization, while no magnetism is observed when Sc, Ti, and V atoms are doped into the ZnO monolayer. The magnetic moment is mainly due to the strong p–d mixing of O and TM (Cr, Mn, Fe, Co, Ni, and Cu) orbitals. These results are potentially useful for spintronic applications and the development of magnetic nanostructures. © 2013 Wiley Periodicals, Inc.