八—4—（四氢糠氧基）双酞菁钕LB膜的电子吸收光谱和扫描隧道显微镜形貌分析

测定了八－４－（四氢糠氧基）双酞菁钕在亚相水面上的π－Ａ曲线，在石英和高取向热解石墨（ＨＯＰＧ）基底上制备了它的ＬＢ膜，解释了八－４－（四氢糠氧基）双酞菁钕的ＵＶ－Ｖｉｓ谱带．并采用扫描隧道显微镜方法观察了ＬＢ膜的形貌，发现在ＨＯＰＧ上双酞菁钕分子是随机分布并有多聚体形成而在ＨＯＰＧ上修饰一层硬脂酸后可得到均匀有序单分散的双酞菁钕分布．所有结果表明大环分子垂直于基底排列     

酞菁铜（Ⅱ）衍生物的合成及其成膜性

合成了四－４－（８－喹啉氧基）酞菁铜（Ⅱ）等６种新型酞菁铜衍生物，通过元素分析、红外光谱、顺磁共振、质谱及核磁共振谱加以确认。紫外可见光谱表明它们在氯仿溶液（１０＾－５ｍｏｌ／Ｌ）中主要以单分子形式存在，配合物的氯仿溶液在亚相（水）上的π－Ａ曲线表明，它们均有明显的“气－液－固”变化过程，具有良好的形成ＬＢ膜性质。     

酞菁铜与四氰化二甲基苯醌电荷转移反应的测定

用红外光谱、紫外可见光谱、循环伏安法等研究了三（２，４－二特戊苯氧基）－８－喹啉氧基酞菁铜和２－十八烷基－７，７，８，８－四氰二基苯醌在Ｌａｎｇｍｕｉｒ－Ｂｌｏｄｇｅｔｔ（ＬＢ）膜中的电荷转移。实验结果表明，在交替和混合ＬＢ膜中，酞 菁铜和Ｃ１８－ＴＣ－ＮＱ分子之间均发生了电荷转移，其中酞菁铜为给体分子，ＴＣＮＱ为受体分子。在混合ＬＢ膜中，电葆转移程度较大。电导率测量表明荷移反应使ＬＢ膜的电导率较     

酞菁LB膜气敏性的研究进展

综述了酞菁类化合物ＬＢ膜的导电性、气敏性、气敏的检测，以及气敏机理和动力学机制。     

酞菁铜与四氰代二甲基苯醌电荷转移反应的测定

用红外光谱、紫外可见光谱、循环伏安法等研究了三．（２，４－二特戊基苯氧基）－８－喹淋氧基酞菁铜（简称酞菁铜）和２－十八烷基－７，７，８，８－四氰二甲基苯醌（简称Ｃ１８－ＴＣＮＱ）在Ｌａｎｇ－ｍｕｉｒ－Ｂｌｏｄｇｅｔｔ（ＬＢ）膜中的电荷转移。实验结果表明，在交替和混合ＬＢ膜中，酞菁铜和Ｃ１８－ＴＣ－ＮＱ分子之间均发生了电荷转移，其中酞菁铜为给体分子，ＴＣＮＱ为受体分子。在混合ＬＢ膜中，电荷转移程度较大。电导率测量表明荷移反应使ＬＢ膜的电导率较纯酞菁铜ＬＢ膜提高了３个数量级。     

八—4—(四氢糠氧基)双酞菁衍生物钕(Ⅲ)、铕(Ⅲ)的合成和LB膜的气敏性

八—４—（四氢糠氧基）双酞菁衍生物钕（Ⅲ）、铕（Ⅲ）的合成和ＬＢ膜的气敏性张引＊辛春梅王丹（吉林省教育学院化学系，长春１３００２２）梁冰洁＊＊陈文启席时权（中科院长春应用化学研究所，长春１３００２２）关键词：希土双酞菁衍生物ＬＢ膜气敏性荧光性紫外可见...     

稀土Eu(Ⅲ)双酞菁衍生物LB膜的荧光性

合成了八－４－（四氢糠氧基）酞菁铕（Ⅲ）,通过元素分析、红外光谱、质谱和紫外－可见光谱加以确认。测定了配合物的ＩＩ－Ａ曲线,证明它有很好的成膜性,Ｚ型沉积形成的ＬＢ膜材料有很强的荧光响应,随着ＬＢ膜厚度的增加,荧光性增强。掺杂邻菲咯啉形成的混合ＬＢ膜,其荧光性比纯膜强。但不是邻菲咯啉加入的量越多荧光性越强。配合物：邻菲咯啉＝１：１０时（摩尔比）,有最好的荧光行为。用电子光谱对ＬＢ膜的结构进行了表征     

含光功能基团聚合物LB膜的研究进展

本文在简要介绍含光功能基团聚合物ＬＢ膜之后，详细回顾了功能化ＬＢ膜体系光物理过程的研究，总结了含非线性光学基团聚合物ＬＢ膜的研究现状。最后，简要介绍了它们的应用前景。     

聚甲基丙烯酸甲酯单分子膜的原子力学显微镜研究

报道了利用原子力显微镜（ＡＦＭ）技术对聚甲基丙烯酸甲酯（ＰＭＭＡ）单分子膜进行分子结构水平的观察研究．由ＡＰＭ图像中得到的ＰＭＭＡ单体所占面积与用π－Ａ曲线中换算出液面上ＰＭＭＡＬａｕｇｍｕｉｒ膜中单体的面积符合得很好．从ＡＦＭ图像中可见ＰＭＭＡＬＢ膜中ＰＭＭＡ的线型碳链是与档板（ｂａｒｒｉｅｒ）平行的紧密排列，与ＬＢ提膜方向相垂直．并由此对ＰＭＭＡＬＢ膜的形成过程进行分析．此外，还观察到了在Ｓｉ基底上ＰＭＭＡ直链的卷绕伸直排列形态，初步分析了其形成原因．     

纯Y型硬脂酸铅LB膜的制备及结构表征

纯Ｙ型硬脂酸铅ＬＢ膜的制备及结构表征陈海燕，彭笑刚，于连香，周勇亮，姜月顺，李铁津（吉林大学化学系，长春，１３００２３）徐跃，高忠民，魏诠（吉林大学测试中心）关键词硬脂酸铅，ＬＢ膜转移，硫化铅单层膜在脂肪酸盐ＬＢ膜的沉积过程中，存在由Ｙ型向Ｘ型沉积的...     

Molecular patterning with a two-dimensional network polymer LB film 2: Drawing patterns by an electron beam

Electron beam lithography was investigated using a cross-linkable polymer Langmuir–Blodgett (LB) film. Cross-linking reaction occurs in the LB film with electron beam irradiation as well as UV light irradiation and the irradiated LB film becomes insoluble in the organic solvents to form a two-dimensional network in the LB film. The sensitivity and contrast of the cross-linkable polymer LB film are 3 μC cm^-2 and 0.64, respectively. The limiting resolution of patterning is 0.2 μm line-and-space. The electron beam lithography using the cross-linkable polymer LB film is applicable to the future nanotechnology.     

Synthesis and Structure of PEDOT Prepared through a Modified LB Film Method

Adopting LB film method, an arachidic acid (AA)/PEDOT multilayer LB film and polymerized EDOT monomers in hydrophilic group of LB were chosen to prepare the arachidic acid (AA)/PEDOT multilayer LB film. UV-Vis, FT-IR and XPS analyses implied that EDOT was effectively polymerized in film, and thus PEDOT conducting polymer was produced. Analyses of XRR and SIMS indicated that the film had a well-arranged lamella structure, and further research showed that polymerization of EDOT in AA film destroyed the orderliness of the original LB film. This phenomenon could be related to the destructive effect of polymerization on the layered structure. We used four-point probe and semiconductor instrument to study the conductivity property of the film, and observed that the conductivity of AA/PEDOT film had sudden changes with the changes of processing time in an effective conduction network, which was caused by "permeability" in conducting channel of multilayer film. The test results also indicated that the conductivity of AA/PEDOT film was obviously better than that of spin-coating PEDOT/PSS or ODA-SA/PEDOT-PSS film due to the higher π structure of PEDOT structure and ordered film structure.     

Fabrication of polymer Langmuir-Blodgett films containing regioregular poly(3-hexylthiophene) for application to field-effect transistor

Semiconducting thin films consisting of regioregular poly(3-hexylthiophene) (RR-PHT) and poly(N-dodecylacrylamide) (pDDA) were constructed by the Langmuir-Blodgett (LB) technique. A mixture of RR-PHT and pDDA spread from a chloroform solution on a water surface forms a stable monolayer, which can be transferred onto solid substrates by the LB method, yielding a well-defined polymer LB film. Surface morphology studies of the LB film indicate that the RR-PHT is dispersed uniformly throughout the surface. The polymer thin film was chemically doped by contacting with FeCl3 acetonitrile solution, and a conductivity of 5.6 S/cm was achieved. Further, the LB film was utilized as the semiconducting film in the field-effect transistor (FET), and mobilities of 2.2 x 10(-4) and 4.4 x 10(-4) cm2 V(-1) s(-1) were obtained by analyzing the saturated and linear regions of the current-voltage characteristic, respectively.     

Fabrication of electrochemical transistor based on pi-conjugate polymer Langmuir-Blodgett film

We fabricated an efficient organic electrochemical transistor (OECT) composed of polymer Langmuir-Blodgett (LB) film. The pi-conjugated polymer LB film, which was constructed from a poly(N-dodecylacrylamide) (pDDA) and poly(3-hexylthiophene) (PHT) mixture, was used as a conduction channel layer to connect source and drain electrodes. The mixed-polymer LB film was characterized using UV-vis spectroscopy, X-ray diffraction (XRD), atomic force microscopy (AFM), and cyclic voltammetry. Subsequent UV spectra measurements, XRD measurements, and AFM measurements show that PHT forms a crystalline lamellar domain in the layered structure of pDDA. The OECT included 10 layers of the mixed-polymer LB film as the conduction channel layer. The OECT showed an on/off ratio of 1.1x10(4) and mobility of 7.5x10(-2) cm2 V(-1) s(-1) at low gate (VG=-1.2 V) and source-drain voltages (VDS=-0.5 V). Moreover, the necessary charge to operate the OECT was 1.1x10(-9) mol of e(-1) cm(-2), which was 2 orders smaller than the value reported using a similar device structure. The relatively high on/off ratio and low charge consumption suggest that this OECT, which is fabricated from pi-conjugated polymer LB films, is applicable to macroelectronic devices.     

含偶氮生色团的“倒浮萍”聚合物LB膜及其可逆光信息存储特性

含偶氮苯功能基团的聚合物在光电子器件研制中具有诱人的应用前景．Wendorff[1]利用偶氮液晶聚合物首次实现可逆的光学信息存储后，利用偶氮苯分子的激光诱导二向色性和双折射效应实现可逆光学信息存储引起人们极大的兴趣．与传统的利用偶氮苯的顺反异构体实现信息存储的方式相比，这种信息存储方式由于偶氯苯分子始终处于热力学稳定的反式构象，因而具有突出的长期稳定性，具有更广阔的应用前景[1,2]．本工作设计合成了以含有给受体的偶氮苯分子为接枝侧链的两亲性聚合物，并研究了其成膜特性与可逆光信息存储特性．1实验部分两亲性聚合物…     

Study on Conductivity Properties of PEDOT Prepared through a Modified LB Film Method

Adopting LB film method, an arachidic acid (AA)/PEDOT multilayer LB film was chosen, and polymerized EDOT monomers in hydrophilic group of LB to prepare arachidic acid (AA)/PEDOT multilayer LB film. UV‐Vis, FT‐IR and XPS analyses implied that EDOT was effectively polymerized in film, and thus PEDOT conducting polymer was produced. Analyses of XRR and SIMS indicated that film had a well‐arranged lamella structure, and further research showed that polymerization of EDOT in AA film destroyed the orderliness of the original LB film. This phenomenon could be related to the destructive effect of polymerization on layered structure. We used four‐point probe and semiconductor instrument to study the conductivity property of the film, and observed that the conductivity of AA/PEDOT film had sudden changes with the processing time of changes in effective conduction network. That was caused by "permeability" in conducting channel of multilayer film. The test results also indicated that the conductivity of AA/PEDOT film was obviously better than that of spin‐coating PEDOT/PSS film or that of ODA‐SA/PEDOT‐PSS film, which was due to the higher π structure of PEDOT structure and ordered film structure.     

Polymer-surfactant layered heterostructures by electropolymerization of phenosafranine in Langmuir-Blodgett films

Langmuir-Blodgett (LB) films of the water-soluble dye phenosafranine (PS) have been prepared by its adsorption from aqueous dye solution to an arachidic acid (AA) monolayer at the air-water interface. Atomic force microscopy (AFM) images of the LB films revealed the effect of change in pH of deposition on the degree of complexation of AA with the PS dye. Well-defined circular islands and holes were observed which disappeared with the increase in pH. Polarized absorption studies indicated that the dye molecules are oriented uniaxially with their long axis titled at a constant angle to the surface normal of the LB film. Within the restricted geometry of the LB film, the PS dye was electropolymerized to form a two-dimensional film of poly(phenosafranine) sandwiched between arachidic acid layers. The film was characterized by IR spectroscopy, cyclic voltammetry, and AFM. X-ray diffraction studies reveal the presence of a layer structure in the AA-PS LB film before and after polymerization. The polymer film showed highly anisotropic electrical conductivity of ca. 10 orders of magnitude. This indicates the formation of two-dimensional polyPS layers between arachidic acid layers resulting in a layered heterostructure film having alternate conducting and insulating regions. Also, the conductivity of the polyPS prepared from LB film was found to be approximately 2.5 times higher than the conductivity of polyPS prepared by solution polymerization method.     

倒浮萍聚合物ES-3LB膜掠角反射-吸收红外光谱的研究

用傅里叶变换红外掠角反射-吸收光谱技术对ES-3LB膜的取向和相变行为进行了详细的研究.结果表明,在金表面上制备的ES-3LB膜中烷基链基本垂直于基面.相转变行为的研究表明,ES-3LB膜有3个相变点,分别在65,105和140℃.第一个相变过程表现为LB膜从一种有序状态到另一种有序状态的转变;第二个相变过程表现为LB膜中烷基链的有序-无序转变;第三个相变过程是LB膜的层状结构坍塌转变为各向同性熔融体的过程.     

Photoelectrical properties of Langmuir–Blodgett films of poly(methyl phenylsilane)s

Langmuir–Blodgett (LB) films were prepared from poly(methylphenylsilane) bearing electron acceptor π-conjugated substituents. The small limiting area (0.078 nm²) per one repeating unit of polysilane (PSi) in monomolecular film and the large thickness of the film (6 nm) suggest that the polymer chains are not fully spread on water surface. The electrical and photoelectrical properties of Al/LB film/Au sandwich cells containing various numbers of the polysilane layers were studied. Holes were transported from the Al electrode through the LB film to the Au electrode when the light was absorbed by the polysilane. The highest photovoltaic effect occurred in the first monolayer of polysilane at the Al contact. The cell resistivity and the photovoltage were decreased by parallel conductance of defects in the films consisting of small numbers of PSi layers.     

Surface enhanced fluorescence and Raman imaging of Langmuir-Blodgett azopolymer films

The spectroscopic properties and surface-enhanced spectra of Langmuir-Blodgett (LB) films of methacrylic homopolymer (HPDR13) are presented. It is shown that LB film displays strong fluorescence attributed to the spatial restrictions imposed by its structure. The emission is observed in conjunction with photoisomerization, a process clearly demonstrated by the formation of surface-relief gratings in the LB film [C.R. Mendon?a et al., Macromolecules 32 (1999) 1493]. Surface-enhanced Raman scattering (SERS), Surface-enhanced resonance Raman scattering (SERRS) and surface-enhanced fluorescence (SEF) were observed for LB films of HPDR13 deposited onto silver island films. SERS measurements were also carried out on a sample fabricated with one monolayer LB film deposited onto silver islands followed by one overlayer of silver (LB sandwiched between two layers of silver islands). The polymer interacts very weakly with the metal surface (physisorption), and the enhancement effect is determined by the local electric field enhancement. The strong SERS and SERRS signals were suitable for micro-Raman imaging. Line, area mapping and global images of the LB monolayer on silver island are reported. The transfer ratio in the fabrication of the LB suggests a homogeneous coating of the silver islands, thereby the chemical images show the variation of the SERS intensity due to surface enhancement.