超短脉冲简并四波混频时间分辨研究

研究了简并以混频的时间分辨曲线，数值模拟了由延迟时间引起的两种不同光栅的时间分辨曲线以及曲线的约化半宽度与约化弛豫时间ｔｒ／ｔｐ的变化关系。     

飞秒激光在双折射微结构光纤中模式控制的四波混频效应的实验研究

利用飞秒激光脉冲在长度为10cm，包层具有大空气比的双折射微结构光纤中通过高阶模相位 匹配的四波混频获得了波长可调谐的反斯托克斯波.实验中脉冲宽度为35fs，中心波长820nm ，单脉冲能量4nJ的飞秒激光脉冲耦合到长轴直径为5μm，短轴为46μm的双折射微结构光 纤中.在高阶模传输情况下，通过调制耦合光的偏振方向，获得了具有不同中心波长的反斯 托克斯波.通过对比分析，讨论了输入光的偏振态对双折射微结构光纤中高阶模式下四波混 频效应的影响情况.理论计算分析很好的解释了实验结果. 关键词： 微结构光纤 飞秒脉冲激光 四波混频     

瑞利型非简并四波混频:一种研究超快过程的新方法

文章提出了用瑞利型非简并四波混频来研究物质的超快过程，与传统的时间领域技术不同，瑞利型非简并四波混频是一种频率领域的光谱学方法，它的时间分辨率与激光的脉冲宽度无关。     

非对称量子阱中的二阶非线性光学极化率

本文主要研究了一个特殊非对称量子阱中的二阶非线性光学极化率,并且利用量子力学中的密度矩阵算符理论和迭代方法导出了二次谐波极化率的解析表达式.最后,以典型的GaAs/AlGaAs非对称量子阱为例作了数值计算.数值结果表明,较大的二次谐波极化率与系统的非对称性有关,系统的非对称性越大,二次谐波极化率越大.     

强飞秒激光烧蚀石英玻璃的超快时间分辨光学诊断

采用超快时间分辨的光学诊断技术对飞秒激光脉冲烧蚀石英玻璃的动态过程进行了实验研究.首先,对烧蚀过程中石英玻璃外部的物质喷射进行了数字全息记录,获得了不同延迟时间下探测光的二维相位差分布图,并由此推断出了喷射物的成分和结构.此外,对石英玻璃内部的现象进行了时间分辨阴影图记录,从阴影图中观察到了石英玻璃内部的两个应力波的演化过程.这两个应力波与目标靶外部的两次物质喷射相关. 关键词： 脉冲数字全息 飞秒激光烧蚀 超快时间分辨 应力波     

微结构光纤次芯中的四波混频过程

利用Ti:sapphire飞秒激光脉冲在微结构光纤包层的次芯中通过参量四波混频效应获得480—550nm的反斯托克斯波,转换效率可高达28%. 通过改变输入光的偏振方向可以调节反斯托克斯波的中心波长. 理论模拟了飞秒激光在次芯中的模式特性和色散特性,较好地解释了实验结果. 关键词： 微结构光纤 飞秒激光脉冲 参量四波混频过程     

自旋密度光栅和本征GaAs量子阱中的电子自旋双极扩散

为研究空穴对自旋极化电子扩散的影响,提出用自旋密度光栅方法来观察电子自旋扩散过程。由飞秒激光在本征GaAs多量子阱中激发产生瞬态自旋光栅和瞬态自旋密度光栅,并用于研究电子自旋扩散和电子自旋双极扩散。实验测得自旋双极扩散系数Das ＝25.4 cm 2/s,低于自旋扩散系数Ds ＝113.0 cm 2/s,表明自旋密度光栅中电子自旋扩散受到空穴的显著影响。     

时间分辨电子显微镜的可行性研究

文章从理论上分析了飞秒激光与金属阴极的相互作用过程.将飞秒激光与金属阴极产生的超短电子脉冲作为电子源,提出了一种具有时间分辨能力的电子显微镜(TREM)的概念设计.文章作者详细地研究了这种电子显微镜的可行性,并讨论了超短电子脉冲的传输和控制问题.     

充气毛细管中飞秒激光四波混频的理论描述

建立了一个描写充气毛细管中飞秒激光四波混频过程的理论框架.在 这个理论框架的基础上，对最近得到的充气毛细管中飞秒激光四波混频过程的信号强度气 压实验曲线给出了初步的理论说明．发现考虑走离效应和相调制效应对充气毛细管中飞秒激 光四波混频过程有重要的作用．同时还发现在一定的条件下，考虑直接的三次谐波过程对实 验曲线的影响是必要的. 关键词： 四波混频 飞秒激光 充气毛细管     

量子点量子阱中的三阶非线性光学特性的研究

利用紧致密度矩阵近似方法，研究了一个特殊量子点量子阱中的三阶非线性光学特性(三次谐波产生)，得到了量子点量子阱系统的三次谐波产生系数的解析表达式，而且考虑了量子点量子阱系统中的两种电子束缚态-壳层阱内与阱外两种束缚态。对CdS/HgS构成的典型的量子点量子阱进行了数值计算，得到了10^-15(m／v)^2量级的三次谐波产生系数，并且绘出了三次谐波产生系数作为量子点量子阱的尺寸和泵浦光子能量的函数曲线，最后对曲线的特征及其形成的原因进行了解析。     

AlGaAs/GaAs多量子阱结构中受激载流子的飞秒弛豫特性

本文介绍采用飞秒饱和吸收测量技术研究Al_xGa_(1-x)As/GaAs多量子阱结构中受激载流子的超快弛豫特性.当激发光子能量大于样品势垒层能带隙时,受激产生于势垒层和势阱层连续态中的载流子分别在130和30fs时间内离开受激态,弛豫至准平衡态.势垒中的载流子被捕至势阱束缚态的情况主要发生于热载流子的冷却和复合过程的皮秒级时间内.     

Quantum measurement and pure dephasing

The prerequisite of quantum measurement is a transformation of an initially off-diagonal density matrix _ρmα;nβ describing an interacting measured object and measuring device into a diagonal density matrix _{ρmα;mαδmnδαβ} . The latter density matrix describes a proper mixture of states having definitem-values. On the other hand, the irreversible relaxation (towards the thermodynamic equilibrium) is also characterized by transformation of an initially off-diagonal matrix into a diagonal one. It has been shown that the process of irreversible relaxation can be used to perform quantum measurement, provided the duration Δt of the measurement is much larger thanT ₂, the phase relaxation time, and much smaller thanT ₁, the population relaxation time:T ₂ ≪ Δt ≪T ₁. Agedanken experiment describing this kind of measurement is provided. Aπ/2-pulse transforms an initials _z = −1/2 state into superposition ofs _z = ±1/2 states. The irreversible relaxation leads to the proper mixture ofs _z = 1/2 ands _z = −1/2 state. Results of the measurements are verified by the second electromagnetic pulse.     

Beat structure in spectrally resolved four-wave mixing under crosslinear polarization in GaAs quantum wells

The polarization dependence of beat structure in spectrally resolved four-wave mixing was investigated on 50 Å GaAs multiple quantum wells. Under crosslinear polarization we observed a beating structure at higher energy region of the main spectral peak due to biexciton–exciton transition. The beat has a period of 0.95 ps and is constructive at delay time T=0 ps, which suggests the corresponding double Feynman diagrams to be of the same type. By shortening the central wavelength of the sub-ps laser, we observed the distinctive peak corresponding to the beat period. Even in GaAs system, which is generally believed to have a small biexcitonic effect, there are two effective 2-exciton states with well-defined energies which are required to describe the third-order optical nonlinearly.     

Anomalous dephasing of two-dimensional electrons in an AlGaAs/GaAs parabolic quantum well structure

Magnetoconductivity measurements are performed on a parabolic quantum well structure. The weak localization effect is observed at a low magnetic field for both single-subband and double-subband occupation regimes. Applying weak-localization theory, we have extracted the dephasing rate. The extracted dephasing rate increases with increasing conductivity in the small-energy-transfer regime and shows a similar trend as the electron density is increased in the large-energy-transfer regime. This is in conflict with Fermi-liquid theory, and cannot be attributed to electron–phonon scattering.     

The polarization sensitivity of optical absorption in tensile strained GaAs/InAlAs double quantum wells

The electric field dependence of the polarization sensitivity of optical absorption in tensile-strained GaAs/InAlAs double quantum wells (DQWs) was investigated theoretically. The coupling effects and electric-field-induced change of eigenstates in various DQW structures were analysed within the framework of the Bastard envelope function approximation using the transfer matrix method (TMM). The absorption coefficient was calculated with excitonic effects included. The simulation results show that it is possible to change the polarization characteristics in the DQW structures by adjusting the applied electric field.     

Gate control of dynamic nuclear polarization in GaAs quantum wells

Gate control of dynamic nuclear polarization under optical orientation is demonstrated in a Schottky-gated n-GaAs/AlGaAs (110) quantum well by time-resolved Kerr rotation measurements. Spin relaxation of electrons due to mechanisms other than the hyperfine interaction is effectively suppressed as the donor induced background electron density is reduced from metallic to insulating regimes. Subsequent accumulation of photoexcited electron spins dramatically enhances dynamic nuclear polarization at low magnetic field, allowing us to tune nuclear spin polarization by external gate voltages.     

Acoustic phonon dephasing in shallow GaAs/Ga Al As single quantum wells

The intermediate dimensionality regime is studied on a set of shallow GaAs/Ga Al As single quantum wells. Such heterostructures exhibit 2D strong excitonic electroabsorption together with near 3D fast transport properties. We report dephasing time measurements of the heavy-hole exciton and we show that the acoustic phonon contribution decreases with to a value in good agreement with theoretical predictions for GaAs bulk.