四波混频与瑞利散射场的干涉现象

介绍在半导体量子阱的飞秒激光四波混频实验中观测到的新的干涉现象.分析表明,实验曲线中的相干振荡来自样品的瑞利散射与四波混频信号的干涉.运用此干涉模型进行了理论模拟,所得结果与实验符合得很好,并由此较准确地得到了介质的退相时间为44 fs. 关键词： 量子阱 四波混频 瑞利散射     

时间分辨简并四波混频中的量子拍频效应

本文严格处理了准简并二能级系统中时间分辨简并四波混频问题。指出在这种简并四波混频中同样可能存在量子拍频效应。分析了这种量子拍频效应的产生条件和特点。讨论了可能的应用。 关键词：     

GaAs/AlGaAs多量子阱中载流子动力学的实验研究

利用瞬态光栅激光光谱技术测量了(110)方向生长的本征GaAs/AlGaAs多量子阱的双极扩散系数.室温下,光激发的载流子浓度n_ex=3.4×10¹⁰/cm²时,测得双极扩散系数D_a=13.0 cm²/s,载流子的寿命τ_R=1.9 ns.改变光激发的载流子浓度(n_{ex关键词： 瞬态光栅 量子阱 空穴输运}     

充气毛细管中飞秒激光四波混频的理论描述

建立了一个描写充气毛细管中飞秒激光四波混频过程的理论框架.在 这个理论框架的基础上，对最近得到的充气毛细管中飞秒激光四波混频过程的信号强度气 压实验曲线给出了初步的理论说明．发现考虑走离效应和相调制效应对充气毛细管中飞秒激 光四波混频过程有重要的作用．同时还发现在一定的条件下，考虑直接的三次谐波过程对实 验曲线的影响是必要的. 关键词： 四波混频 飞秒激光 充气毛细管     

掺杂对称性对(110)晶向生长GaAs/AlGaAs量子阱中电子自旋弛豫动力学的影响

采用时间分辨圆偏振光抽运-探测光谱,测量了(110)晶向生长的近似对称和完全非对称掺杂GaAs/AlGaAs量子阱中的电子自旋弛豫,发现两种量子阱材料中的电子自旋弛豫时间随载流子浓度的增大均呈现出先增大后减小的趋势,且近似对称掺杂GaAs量子阱中的电子自旋弛豫时间明显大于完全非对称掺杂量子阱.分析表明,在(110)晶向生长的GaAs量子阱中并非只有通常认为的Bir-Aronov-Pikus(BAP)机理起作用,在低载流子浓度区域,两种量子阱中D′yakonov-Perel′(DP)机理起主导作用,高载流子浓度区域BAP机理和DP机理都起作用,完全非对称掺杂的量子阱中DP机理强于近似对称掺杂量子阱.     

AlGaAs/GaAs多量子阱结构中受激载流子的飞秒弛豫特性

本文介绍采用飞秒饱和吸收测量技术研究Al_xGa_(1-x)As/GaAs多量子阱结构中受激载流子的超快弛豫特性.当激发光子能量大于样品势垒层能带隙时,受激产生于势垒层和势阱层连续态中的载流子分别在130和30fs时间内离开受激态,弛豫至准平衡态.势垒中的载流子被捕至势阱束缚态的情况主要发生于热载流子的冷却和复合过程的皮秒级时间内.     

量子阱中电子自旋注入及弛豫的飞秒光谱研究

采用飞秒脉冲的饱和吸收光谱方法研究了GaAs/AlGaAs多量子阱中电子自旋的注入和 弛豫特性，测得电子自旋极化弛豫时间为80±10ps.说明了电子自旋 轨道耦合相互作用引 起局域磁场的随机化，是导致电子的自旋极化弛豫的主要机理. 关键词： 自旋电子学 半导体量子阱 飞秒激光光谱 自旋 轨道耦合     

长寿命吸收过程对超快动力学过程测量的影响

使用飞秒时间分辨抽运-探测透射光谱技术,实验研究了GaAs体材料中光激发载流子的超快弛豫动力学的波长依赖.在相同的光激发载流子浓度和抽运/探测比时,发现760 nm和780 nm两中心波长处的瞬态透射变化延迟扫描信号出现负的和振荡的信号.与模拟计算结果对比,判定该实验瞬态信号是错误的.分析探测器输出波形,发现是由于反相波形导致的,而引起反相波形的原因在于样品中存在长寿命的吸收过程.指出通过提高探测器上的抽运/探测比能够矫正反相波形,从而获得正确的瞬态透射变化动力学.提高探测器上的抽运/探测比与目前的应尽量减小抽运光对探测器的散射贡献的观点是对立的.文章的研究结果对应用抽运-探测时间分辨光谱技术正确地测量超快瞬态动力学过程具有重要的参考价值. 关键词： 时间分辨抽运-探测透射光谱 饱和吸收 吸收增强 GaAs体材料     

四波混频光谱术

本文介绍我们用四波混频研究光与物质相互作用方面取得的新进展．其中包括拉曼增强非简并四波混频，用时间延迟方法区分分子取向栅及热栅，多能级吸收带的非相干光时间延迟四波混频，激光感生螺旋结构及用时间分辨简并四波混频研究原子的碰撞线宽变窄效应．     

飞秒激光在双折射微结构光纤中模式控制的四波混频效应的实验研究

利用飞秒激光脉冲在长度为10cm，包层具有大空气比的双折射微结构光纤中通过高阶模相位 匹配的四波混频获得了波长可调谐的反斯托克斯波.实验中脉冲宽度为35fs，中心波长820nm ，单脉冲能量4nJ的飞秒激光脉冲耦合到长轴直径为5μm，短轴为46μm的双折射微结构光 纤中.在高阶模传输情况下，通过调制耦合光的偏振方向，获得了具有不同中心波长的反斯 托克斯波.通过对比分析，讨论了输入光的偏振态对双折射微结构光纤中高阶模式下四波混 频效应的影响情况.理论计算分析很好的解释了实验结果. 关键词： 微结构光纤 飞秒脉冲激光 四波混频     

Acoustic phonon dephasing in shallow GaAs/Ga Al As single quantum wells

The intermediate dimensionality regime is studied on a set of shallow GaAs/Ga Al As single quantum wells. Such heterostructures exhibit 2D strong excitonic electroabsorption together with near 3D fast transport properties. We report dephasing time measurements of the heavy-hole exciton and we show that the acoustic phonon contribution decreases with to a value in good agreement with theoretical predictions for GaAs bulk.     

加偏置电场的抛物量子阱中的电光效应

本文利用密度矩阵方法得到了加偏置电场的抛物量子阱中电光效应的解析表达式,并以典型的GaAs抛物量子阱为例进行了数值计算研究结果表明,电光效应随偏置电场和抛物势频率的增大而增强,同时也表明GaAs量子阱中的电光效应比体GaAs中的要强一个数量级以上。     

Spin-polarization dependent carrier recombination dynamics and spin relaxation mechanism in asymmetrically doped (110) n-GaAs quantum wells

Carrier recombination and electron spin relaxation dynamics in asymmetric n-doped (110) GaAs/AlGaAs quantum wells are investigated with time-resolved pump-probe spectroscopy. The experiment results reveal that the measured carrier recombination time depends strongly on the polarization of pump pulse. With the same pump photon flux densities, the recombination time of spin-polarized carriers is always longer than that of the spin-balanced carriers except at low pump photon flux densities, this anomaly originates from the polarization-sensitive nonlinear absorption effect. Differing from the traditional views, in the low carrier density regime, the D'yakonov–Perel' (DP) mechanism can be more important than the Bir–Aronov–Pikus (BAP) mechanism, since the DP mechanism takes effect, the spin relaxation time in (110) GaAs QWs is shortened obviously via asymmetric doping.     

Symmetry and spin dephasing in (110)-grown quantum wells

Symmetry and spin dephasing in (110)-grown GaAs quantum wells (QWs) are investigated applying magnetic field induced photogalvanic effect and time-resolved Kerr rotation. We show that magnetic field induced photogalvanic effect provides a tool to probe the symmetry of (110)-grown quantum wells. The photocurrent is only observed for asymmetric structures but vanishes for symmetric QWs. Applying Kerr rotation we prove that in the latter case the spin relaxation time is maximal; therefore, these structures set the upper limit of spin dephasing in GaAs QWs. We also demonstrate that structure inversion asymmetry can be controllably tuned to zero by variation of delta-doping layer positions.     

Influence of electron localization on the spin dephasing anisotropy in bias GaAs/AlGaAs coupled quantum wells

JETP Letters - Electron spin dephasing anisotropy is studied in GaAs/AlGaAs coupled quantum wells by means of a timeresolved Kerr rotation technique. It is found that the spin dephasing rate is...     

Few-cycle THz spectroscopy of nanostructures

Optically excited plasma oscillations in n-doped GaAs epilayers emit intense THz pulses. Using a THz-pump and THz-probe technique we observe the response of the intersubband polarization in semiconductor quantum structures. THz Cross-correlation measurements of modulation doped semiconductor quantum structures allow to determine the absorption, the dispersion, and the dephasing times of the quantized electrons.     

Injection, intersubband relaxation and recombination in GaAs multiple quantum wells

Results of continuous excitation, time-delayed and time-resolved cathodoluminescence experiments on undoped and Be-doped GaAs multiple quantum wells of thickness 5–11 nm are reported for temperatures 5–300 K and excitation intensities 1–10³ W/cm². Comparison is made with similar investigations of bulk epitaxial GaAs layers. Increasing structural localisation of the carriers is identified to lead to a qualitative change of the type of recombination. Increasingly faster radiative excitonic recombination leads to a bypass of impurity and trap capture processes in undoped as well as in doped material, at low temperatures as well as at room temperature. Despite the exponential character of excitonic decay, the luminescence transients are found to be very complex due to an interplay of intersubband scattering and recombination processes and time-dependent carrier temperature. Transients are analysed in detail, excitonic lifetimes and intersubband scattering times are derived. It is argued that both the lifetime reduction in quantum wells and the novel process of recombination heating lead to a strongly increased quasiequilibrium temperature of excited carriers in the wells as compared to bulk material. Injection of carriers from 18 nm GaAlAs barriers to GaAs wells is found to occur in less than 10^-12 s without loss.     

Photoinduced High-Density Phase of Exciton-Polariton Masses and their Coherent Propagation at Stacking Fault Interface in BiI 3

Photoinduced high-density phase of exciton-polariton masses excited at a two-dimensional stacking fault interface in BiI 3 has been studied by observing the degenerate four-wave-mixing (DFWM) signals. It was found that the increase in the dephasing rate due to exciton-exciton collisions is suppressed above a threshold excitation density. Above such density, a coherently propagating component of the exciton masses was detected on the space-resolved DFWM signals obtained by applying the spatially isolated two-spot excitation with a picosecond laser. In this scheme the off-diagonal element of the density matrix of the excitons at the one exciting laser spot propagates to the other, bringing about nonlinear polarization to yield the DFWM light. Time evolution of the space-resolved DFWM signals reveals evidently the macroscopic expansion of the exciton-polariton masses in a photoinduced condensed phase. Energy splitting of the DFWM spectra obtained with a narrow-band laser shows a repulsive interaction between the excitons.     

加偏置电场的双曲线量子阱中的光整流效应

用量子力学中密度矩阵算符理论导出了加偏置电场的双曲线量子阱中光整流系数的解析表达式.并以典型的GaAs双曲线量子阱为例进行了数值计算。研究结果表明,该势阱中的光整流系数与势阱的形状和偏置电场的强度有关。通过调节势阱参量a以及外加偏置电场,在该势阱中可获得一个大的光整流系数.     

Coherent spin dynamics of different density high mobility two-dimensional electron gas in a GaAs quantum well

We have addressed the dependence of quasi-two-dimensional electron spin dephasing time on the electron gas density in a 17-nm GaAs quantum well using the time-resolved magneto-optical Kerr effect. A superlinear increase in the electron dephasing time with decreasing electron density has been found. The degree of electron spin relaxation anisotropy has been measured and the dependence of spin-orbit splitting on electron gas density has been determined.