Diode-pumped regenerative Yb:SrF<Subscript>2</Subscript> amplifier

We report what we believe to be the first Yb:SrF₂ regenerative femtosecond amplifier. The regenerative amplifier produces 325-fs pulses at 100-Hz repetition rate with an energy before compression of 1.4 mJ. The interest of Yb:SrF₂ in such regenerative amplifiers and its complementarity to its well-known isotype Yb:CaF₂ is also discussed.     

Phosphorescence of CaF<Subscript>2</Subscript>-Dy crystals

The decay kinetics of phosphorescence excited by x-rays in a CaF₂-Dy crystal is investigated. It is found that localized charge carriers recombine through tunneling. The conclusion is drawn that, in the initial stages of x-ray irradiation, the accumulation of charge carriers occurs in pairs. This process is caused by the formation of excimer-like molecular states during excitation of the crystal.     

Additive coloring of CaF<Subscript>2</Subscript> optical ceramic

The specificity of additive coloring of CaF₂ optical ceramic (formation of color centers in it and photothermochemical transformation of these centers in colored ceramic samples) has been considered. Under the same coloring conditions, this process occurs more slowly in ceramics rather than in crystals; at the same time, the limiting concentration of color centers that can be introduced into ceramics is much higher. The photothermochemical transformations of color centers in crystals and ceramics, which occur under illumination at different wavelengths and upon heating, have been studied. The specific features of introduction of color centers into ceramic and their transformation under illumination and heating are likely to be related to the mass twinning of ceramic grains.     

Comparative spectroscopic and laser properties of Yb<Superscript>3+</Superscript>-doped CaF<Subscript>2</Subscript>, SrF<Subscript>2</Subscript> and BaF<Subscript>2</Subscript> single crystals

We present the spectroscopic properties and room-temperature cw tunable laser operation of Yb³⁺-doped CaF₂, SrF₂ and BaF₂ single crystals grown and studied in the same conditions. Emission cross sections, lifetimes, laser thresholds, laser slope efficiencies and laser wavelength tuning ranges are compared. It appears that Yb³⁺-doped BaF₂ might be more promising for diode-pumped high power laser operation. PACS 42.55.Rz; 42.70.Hj     

Laser performance of Yb:GdCa<Subscript>4</Subscript>O(BO<Subscript>3</Subscript>)<Subscript>3</Subscript> compared to Yb:KGd(WO<Subscript>4</Subscript>)<Subscript>2</Subscript> under diode-bar pumping

A study of Yb:GdCOB under diode-bar pumping has been performed and the results are compared, experimentally and theoretically, with Yb:KGW in the same cavity. An output power of 7.3 W and a slope efficiency of 57.4% were obtained. Self-frequency-doubling experiments are also discussed.     

CW and tunable laser operation of Yb<Superscript>3+</Superscript> doped CaF<Subscript>2</Subscript>

We present the spectroscopic properties and room temperature of a cw tunable laser operation with Yb³⁺ doped CaF₂ single crystals grown in our laboratory. A laser slope efficiency of 50% with respect to the absorbed 920 nm pump power was obtained, and the laser wavelength could be tuned between 1000 and 1060 nm. PACS 42.55R; 42.70An erratum to this article can be found at     

Characterization of the nonlinear refractive index of the laser crystal Yb:KGd(WO<Subscript>4</Subscript>)<Subscript>2</Subscript>

We present results of the characterization of the nonlinear refractive index of the laser crystal Yb:KGd(WO₄)₂ using a z-scan technique over the 800–1600 nm wavelength range. Based on our experimental and theoretical results we conclude that Yb:KGW crystal is a good candidate for efficient Kerr-lens mode locking. PACS 42.65.An; 42.65.Hw; 42.55.Rz; 42.65.Re     

Analysis of the oscillation intensity of RHEED specular reflection during the MBE growth of CaF<Subscript>2</Subscript>/Si/CaF<Subscript>2</Subscript> structures

The results of analysis of the oscillation intensity of RHEED specular reflection during the MBE growth of CaF₂/Si(111) structures in a wide temperature range from 100 to 600°С are presented. It is shown that the preliminary formation of a 2D Si buffer layer provides the two-dimensional growth of CaF₂ layers. Possible reasons which for the disruption of 2D growth at high substrate temperatures are discussed.     

Diode-pumped Yb:Y<Subscript>2</Subscript>SiO<Subscript>5</Subscript>-LiB<Subscript>3</Subscript>O<Subscript>5</Subscript> cyan laser at 501.7 nm

We describe the output performances of the 928 nm ⁴ F _3/2 → ⁴ I _9/2 transition in Nd:CLNGG under diode-laser pumping. An end-pumped Nd:CLNGG crystal yielded 1.3 W of continuous-wave output power for 17.8 W of absorbed pump power. The slope efficiency with respect to the absorbed pump power was 11.2%. Furthermore, with 17.8 W of diode pump power and the frequency-doubling crystal LiB₃O₅ (LBO), a maximum output power of 260 mW in the blue spectral range at 464 nm has been achieved. The blue output power stability over 4 h is better than 3.2%.     

Diode-pumped high-efficiency passively Q-switched Yb:CaYAlO<Subscript>4</Subscript> laser

We experimentally demonstrated a high-efficiency passively Q-switched Yb:CaYAlO₄ (Yb:CYA) laser based on a semiconductor-saturable absorber mirror (SESAM), and the output characteristics of the laser including the average output power, repetition frequency, pulse duration, pulse energy and pulse peak power were investigated by adopting output mirrors with different transmittances. When the transmittance of the output mirror was 5% and the pump power was set at about 7.76 W, a maximum average output power of as high as 2.480 W was achieved with a slope efficiency and light-to-light efficiency of the Q-switched Yb:CYA laser of up to 37.1% and 31.2%, respectively.     

A high-stability medium based on CaF<Subscript>2</Subscript>:Na crystals with colloidal color centers: I. Photothermochemical conversion of colloidal color centers in CaF<Subscript>2</Subscript>:Na crystals

Photothermochemical conversion of simple color centers (which include from one to four anionic vacancies) and highly aggregated ones in additively colored crystals of calcium fluoride doped by sodium is studied. The annealing of crystals with a low sodium content in a reducing atmosphere (additive coloration) leads to the predominant formation of simple color centers, which convert into highly aggregated centers under the joint action of heating and irradiation in absorption bands of simple centers. The irradiation of highly aggregated centers into their absorption bands and simultaneous heating causes these centers to convert into simple centers. The additive coloration of crystals with a relatively high sodium content leads to the predominant formation of highly aggregated centers. The heating of these crystals along with the irradiation in absorption bands of highly aggregated centers causes these centers to convert into simple centers. The formation of different color centers in the course of additive coloration of crystals with different impurity content and different results of photothermochemical conversion of centers in these crystals are connected with the dual action of impurities. Anion vacancies, which compensate the charge of the impurity alkali metal, facilitate the aggregation of color centers. At the same time, the alkali impurity stabilizes simple color centers.     

Femtosecond laser plasma in CaF<Subscript>2</Subscript> crystal microchannel and effective generation of characteristic X-ray radiation

The dependence of the characteristic X-ray radiation yield from CaF₂ crystal on the formed microchannel depth under highly intensive (I ∼ 3 × 10¹⁵ W/cm²) laser pulses with different contrast was obtained. The maximum of the characteristic X-ray radiation yield at these experimental conditions corresponded to the microchannel depth of 30–50 μm. The efficiency of the laser radiation conversion to the characteristic X-ray radiation increased from 6 × 10⁻⁸ for the surface up to 10⁻⁷ in the microchannel. The dependence of the characteristic X-ray radiation yield on the viewing angle showed that the source of X-ray radiation was located near the surface inside the microchannel.     

Self-assembling of Ge quantum dots in the CaF<Subscript>2</Subscript>/Ge/CaF<Subscript>2</Subscript>/Si heteroepitaxial system and the development of tunnel-resonance diode on its basis

A CaF₂/Ge/CaF₂/Si(111) heteroepitaxial structure with Ge quantum dots was grown by molecular-beam epitaxy. A negative differential conductivity and conductivity oscillations caused by resonant hole tunneling were observed at room temperature. The energy spacing between the levels in quantum dots, as determined from the oscillation period, is 40–50 meV depending on the Ge dot size.     

Radiation Resistance of Yb:LaSc<Subscript>3</Subscript>(BO<Subscript>3</Subscript>)<Subscript>4</Subscript> and Yb:LuYSiO<Subscript>5</Subscript> Laser Crystals

The optical transmission (OT) spectra of Yb:LaSc₃(BO₃)₄ and Yb:LuYSiO₅ laser crystals have been analyzed before and after irradiation from a ⁶⁰Co source with doses up to 45 Mrad. The OT spectra of the Yb:LuYSiO₅ crystal are found to be the same (within the measurement error) before and after irradiation. The irradiation of the 10 at.%Yb:LaSc₃(BO₃)₄ crystal significantly changes its OT spectra in a wide spectral range (330 to 700 nm). A 975-nm laser based on a previously irradiated 4 at.%Yb:LuYSiO₅ crystal has exhibited a differential efficiency of 23% under diode pumping. The up-conversion luminescence spectra in the visible range of the crystals under study have been explained.     

Supersensitive electronic transition in impurity Nd-Nd nanoclusters in CaF<Subscript>2</Subscript> crystal

A comparison of the theoretical calculations with the results of experiments on high-resolution laser spectroscopy made it possible to reveal the fine structure that arises in the supersensitive ⁴I_9/2? ⁴G_5/2 transition as a result of a strong coherent interaction in the Nd³⁺ ion pair in the CaF₂ crystal and construct the level splitting diagram for the ground and excited states of impurity Nd-Nd nanoclusters.     

Power scaling of a continuous-wave and passively Q-switched Yb:KLu(WO<Subscript>4</Subscript>)<Subscript>2</Subscript> laser end-pumped by a high-power diode

The power scaling capacity of a diode end-pumped Yb:KLu(WO₄)₂ laser, operating in the continuous-wave (cw) and passively Q-switched regimes, has been investigated. A cw output power of 11.5 W was achieved with an optical-to-optical efficiency of 41% with respect to the incident pump power, while the slope efficiency amounts to 60%. The passively Q-switchedoperation yielded an average output power of 4.3 W at the fundamental wavelength of 1031.7 nm, and 1.15 W of Raman radiation at 1139.3 nm. The total slope efficiency for Q-switched operation was 40%. The highest pulse energy, duration, and peak power were 170 μJ, 2.2 ns, and 77.3 kW for the fundamental radiation, and 51 μJ, 2.3 ns, and 22.2 kW for the Raman radiation. PACS 42.55.Rz; 42.55.Xi; 42.55.Ye     

Effect of an electron beam on CaF<Subscript>2</Subscript> and BaF<Subscript>2</Subscript> epitaxial layers on Si

Atomically smooth CaF₂ and BaF₂ layers have been sequentially grown on Si(111) substrates by molecular beam epitaxy. Pore macrodefects have been revealed at the points of the action of an electron beam from a diffractometer when analyzing the crystal structure of the surface during the growth with the subsequent observation using atomic force microscopy. The formation of these macrodefects is associated with the decomposition of fluorides by high-energy electrons, which is accompanied by the desorption of fluorine and the drift current of positive ions from the electron charge drains.     

Study of the features of BaF<Subscript>2</Subscript> heteroepitaxy on CaF<Subscript>2</Subscript>/Si(100) layers obtained in the high-temperature growth mode

The surface morphology of BaF₂ epitaxial films grown by MBE (molecular beam epitaxy) in various modes on the surface of CaF₂/Si(100) is investigated by AFM. The CaF₂ layers on Si(100) are obtained in the high-temperature growth mode (Т _S = 750°C). It is shown that the epitaxy of BaF2 at a temperature of 600°C at the initial stage of growth leads to the formation of defects such as perforations in the epitaxial film, while epitaxy at a temperature of 750°C provides a defect-free film with a surface morphology suitable for the subsequent growth of semiconductors of IV–VI type and solid solutions based on them.