聚苯胺/碳纳米管复合体的制备及其三阶非线性光学性能研究

通过原位吸附-受限生长聚合法成功制备了聚苯胺/碳纳米管(PANI/MWCNT)复合体.红外光谱和拉曼光谱证实了在碳纳米管(MWCNT)表面的包覆层为聚苯胺(PANI).紫外—可见吸收光谱表明随着MWCNT含量的增加PANI的吸收发生红移且强度提高.扫描电子显微镜和透射电子显微镜观察发现，PANI/MWCNT复合体直径为40—70nm，其中PANI的包覆层厚度约为15—20nm.利用四波混频方法测试它们的三阶非线性光学系数，结果发现PANI/MWCNT复合体的三阶非线性光学系数比纯PANI大，这说明在MWC 关键词： 碳纳米管 聚苯胺 复合体 三阶非线性光学系数     

模板法合成多壁碳纳米管复合材料

以包覆在碳纳米管表面的薄层二氧化锰作为表面再包覆聚苯胺的反应性模板合成了聚苯胺和碳的复合的多壁纳米管的结构,该复合材料在水中显示出很好的分散性．该方法还可以用来合成如聚3,4-乙撑二氧噻吩、聚吡咯、二氧化硅、无定形碳等材料与碳纳米管的复合材料.     

功能化超薄壳层隔绝银/聚邻巯基苯胺纳米粒子的简易合成（英文）

本文通过简单的一步合成法制备出了壳层隔绝的银/聚邻巯基苯胺纳米粒子。制得的邻巯基苯胺壳层符合设计要求,并且,仅通过改变加入表面活性剂十二烷基硫酸钠的量便可调控壳层厚度,所得2nm厚度的壳层均一、无针孔且具氨基功能化。鉴于银核的超强等离子共振效应,当这种具有超薄壳层的银/聚邻巯基苯胺纳米粒子作为表面增强拉曼的基底材料时,可获得极强的拉曼增强信号。     

γ射线辐射下制备聚苯胺/银纳米复合材料及其输运性质

在γ射线辐射下,采用一步法制备了聚苯胺/银复合材料,通过红外光谱、紫外-可见光光谱、X射线衍射分析表明,所制备的样品由聚苯胺和面心立方相的银组成. 反应机理研究表明,聚苯胺是通过苯胺阳离子与·OH反应生成的苯胺阳离子自由基之间的反应生成的,银是通过银Ag⁺与e^-_aq的反应生成的. 扫描电子显微镜和透射电子显微镜显示聚苯胺/银复合物呈纳米纤维和纳米颗粒的形貌,这种形貌可能是由于类似〝快速混合〞聚合反应的过程造成的. 在80～300 K,聚苯胺/银复合材料的输运行为可较好地符合变程跃迁模型,而在80 K以下,则明显地偏离变程跃迁模型.     

Fe2O3/Au/Ag磁性核壳纳米粒子的制备及其SERS研究

本文介绍了一种制备多功能磁性Fe2O3/Au/Ag纳米粒子的简捷方法, 制备的粒子直径大约在100 nm左右, 采用UV-vis和SEM对该结构进行了表征。并通过调节硝酸银的用量, 制备了一系列具有不同壳层厚度和表面结构的多重核壳纳米粒子。以苯硫酚(TP)为探针分子, 研究了不同银壳厚度的磁性纳米粒子的表面增强拉曼散射(SERS)活性。结果表明随Ag:Au比例的不断增加, 其SERS活性呈现先增大后减小的趋势, 这与表面结构的改变有关。     

石墨烯/银纳米复合材料的制备及其影响因素研究

以硝酸银、鳞片石墨为原料, 在强碱环境下, 制备得到石墨烯/银纳米复合材料, 采用X射线衍射、红外吸收光谱、透射电子显微镜、紫外可见分光光度计对所制备的石墨 烯/银纳米复合材料进行了表征.结果表明: 氧化石墨烯和银离子在强碱NaOH的作用下, 氧化石墨烯失去部分含氧官能团, 被部分还原为石墨烯(rGO), 银离子被还原为纳米银颗粒, 均匀分布在氧化石墨烯片层表面, 颗粒大小和分布受硝酸银用量、反应温度、NaOH的加入顺序及前驱物混合方式等因素影响, 在GO与Ag粒子质量比为 1:1.08时, 负载在石墨烯片层上的银纳米颗粒集中在12 nm左右. 关键词： 石墨烯/银纳米复合材料 强碱溶液     

修饰银电极上单壁碳纳米管的表面增强拉曼散射

本文采用修饰了银纳米颗粒的银电极作为基底,获得了高质量的单壁碳纳米管(SWCNTs)的表面增强拉曼散射(SERS)光谱。在1100~1500 cm-1范围内观测到了一组表征SWCNTs结构的新峰。修饰在银电极上的银纳米颗粒不仅可以保证SWCNTs在这一体系中吸附的紧密性,而且通过变面等离子体共振起到了电磁放大的作用。通过对银纳米颗粒修饰银电极表面SWCNTs的SERS光谱及其随电位变化的SERS光谱的研究,我们可以研究这一过程中的SERS机制。理论和实验结果表明,银纳米颗粒修饰银电极上单壁碳纳米管的SERS很有潜力成为一种检测单壁碳纳米管合成质量的新方法。     

碳纳米管/聚苯胺纳米复合管的制备及其微波介电特性研究

用原位乳液聚合法在碳纳米管表面包覆聚苯胺，制备出了碳纳米管/聚苯胺一维纳米复合管.复合管的直径为50—80 nm，聚苯胺包覆层的厚度为20—30 nm，聚苯胺在碳纳米管表面以层状和枝晶状两种形态生长.研究了碳纳米管/聚苯胺复合管在2—18 GHz的微波介电特性.与纯碳纳米管相比，碳纳米管/聚苯胺复合管的介电常数的实部ε′和虚部ε″在2—18 GHz随频率变化较小，在低频波段介电常数值较小，作为微波吸收剂容易实现与自由空间的阻抗匹配，而且它的介电损耗角正切(tanδ=ε″/ε′)较高，是一种很好的微波吸收剂. 关键词： 碳纳米管 聚苯胺 微波介电特性 微波吸收剂     

金/多壁碳纳米管复合材料的合成及其三阶非线性光学性质

通过化学吸附法制备了金/多壁碳纳米管复合材料.采用X射线衍射仪、透射电子显微镜和紫外可见光谱仪对复合材料进行表征,制备的金纳米颗粒平均粒径为6nm,且均匀分散在碳纳米管表面.在脉冲宽度为30ps、波长为532nm的激光光源激发下,运用Z扫描技术分别研究金/多壁碳纳米管复合材料和多壁碳纳米管的三阶非线性光学性质.实验结果表明:金/多壁碳纳米管复合材料呈现正的非线性折射效应和饱和吸收性质,其三阶非线性极化率χ(3)为1.89×10-12 esu,比多壁碳纳米管高2.6倍.     

多壁碳纳米管/聚丙烯复合材料热导率研究

用Pt细丝代替已有3ω方法中的薄膜热线,并设计了基于Labview程序的虚拟测量系统,准确、方便地测量了聚丙烯复合材料的热导率. 测量结果发现,多壁碳纳米管/丁苯橡胶/聚丙烯三元复合材料的热导率随着多壁碳纳米管/丁苯橡胶粉末含量的增加变化不大;多壁碳纳米管/聚丙烯复合材料的热导率随着多壁碳纳米管含量增加而增大;复合材料热导率远小于简单混合规则预测的结果,而与有效介质理论符合很好. 关键词： ω法')" href="#">3ω法 多壁碳纳米管 聚丙烯复合材料 热导率     

Chiral perturbation theory for fDS/FD and BBS/BB

The decay constants for D and D_s mesons, denoted f_D and f_DS respectively, are equal in the SU(3)_V limit, as are the hadronic amplitudes for and mixing. The leading SU(3)_V violating contribution to (F_DS/F_D) and to the ration of hadronic matrix elements relevant for and mixing amplitudes are calculated in chiral perturbatiion theory. We discuss the formalism needed to include both meson and anti-meson fields in the heavy quark effective theory.     

Magnetism in nanometer-thick TiOx/Co/TiOx/TiN/Si multilayered structures

Most studies on Co-doped TiO₂ system were focused on thin films grown by MBE-based methods. In this work we report the ferromagnetism of nanometer-thick-layered TiO₂/Co/TiO₂/TiN film grown on Si substrate by conventional magnetron sputtering. For the growth of TiO₂ on silicon, a non-oxide thermally stable material, TiN, was introduced to prevent Ti penetration into the Si substrate. Structural, magnetic, and transport measurements respectively by Raman, SQUID and Hall effect show that our samples are n-type semiconductors and exchange bias effect due to exchange coupling between Co and interfacial CoO. For the rapid vacuum annealed specimen, we found an enhanced loss and a Perminvar-type constricted hysteresis loop, which attributed to pinning of domain walls due to an induced anisotropy by the pair ordering in the metallic alloy of Co-Ti-Si.     

Electrical property of HfOxNy-HfO2-HfOxNy sandwich-stack films

The effects of HfO_xN_y on the electrical property of HfO_xN_y-HfO₂-HfO_xN_y sandwich-stack (signed as SS) films were investigated. Excellent electrical performances were achieved in SS films, with a high dielectric constant of 16 and a low leakage current of ∼2 × 10⁻⁸ A/cm² at 1 MV/cm. Schottky (SK) emission and Frenkel-Poole (PF) emission are found to be the dominant mechanisms for the current conduction behavior. After a long time stress, the flat-band voltage shift in the SS film is much smaller than that in a pure HfO_xN_y film indicating fewer charge traps existed in the SS film. Based on the experiments, the new SS structure is more favorable for the improvement of electrical performances than a pure HfO_xN_y or HfO₂ structure.     

Electronic and magnetic structures of V-doped zinc blende Zn1-xVxNyO1-y and Zn1-xVxPyO1-y

Electronic and magnetic structures of zinc blende ZnO doped with V impurities are studied by first-principles calculations based on the Korringa-Kohn-Rostoker (KKR) method combined with the coherent potential approximation (CPA).Calculations for the substitution of O by N or P are performed and the magnetic moment is found to be sensitive to the N or P content.Furthermore,the system exhibits a half-metallic band structure accompanied by the broadening of vanadium bands.The mechanism responsible for ferromagnetism is also discussed and the stability of the ferromagnetic state compared with that of the paramagnetic state is systematically investigated by calculating the total energy difference between them by using supercell method.     

Near-infrared bands of S2: 3Πgi-3Σu+ system

Vibrational and rotational analyses of the near-infrared bands of S₂ lying in the region 7440–8085 Å are reported. They form a new band system involving a ${}^3\text{Π}{}_{\mathrm{gi}}\text{-}{}^3\text{Σ}{}_{\mathrm{u}}{}^{\mathrm{+}}$ transition and arise from the same initial ³Π_gi state of the ³Π_gi-³Δ_ui band system reported earlier. The analyses of the bands of this system due to the isotopic molecules ³²S³⁴S and ³⁴S₂ are also reported.     

Different temperature dependence of carrier transport properties between AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures

The temperature dependence of carrier transport properties of AlxGa1-xN/InyGa1-yN/GaN and AlxGa1-xN/GaN heterostructures has been investigated.It is shown that the Hall mobility in Al0.25Ga0.75N/In0.03Ga0.97N/GaN heterostructures is higher than that in Al0.25Ga0.75N/GaN heterostructures at temperatures above 500 K,even the mobility in the former is much lower than that in the latter at 300 K.More importantly,the electron sheet density in Al0.25Ga0.75N/In0.03Ga0.97N/GaN heterostructures decreases slightly,whereas the electron sheet density in Al0.25Ga0.75N/GaN heterostructures gradually increases with increasing temperature above 500 K.It is believed that an electron depletion layer is formed due to the negative polarization charges at the InyGa1-yN/GaN heterointerface induced by the compressive strain in the InyGa1-yN channel,which e-ectively suppresses the parallel conductivity originating from the thermal excitation in the underlying GaN layer at high temperatures.     

Spin-glass-like behavior in ZnxCryAlzSe4

The magnetic and electrical properties of the Al-doped polycrystalline spinels Zn_xCr_yAl_zSe₄ (0.13≤z≤0.55) with the antiferromagnetic (AFM) order and semiconducting behavior were investigated. A complex antiferromagnetic structure below a Néel temperature T_N≈23 K for the samples with z up to 0.4 contrasting with the strong ferromagnetic (FM) interactions evidenced by a large positive Curie-Weiss temperature θ_CW decreasing from 62.2 K for z=0.13 to 37.5 K for z=0.55 was observed. Detailed investigations revealed a divergence between the zero-field-cooling (ZFC) and field-cooling (FC) susceptibilities at temperature less than T_N suggesting bond frustration due to competing ferromagnetic and antiferromagnetic exchange interactions in the compositional range 0.13≤z≤0.4. Meanwhile, for z=0.55 a spin-glass-like behavior of cluster type with randomly oriented magnetic moments is observed as the ZFC-FC splitting goes up to the freezing temperature T_f=11.5 K and the critical fields connected both with a transformation of the antiferromagnetic spin spiral via conical magnetic structure into ferromagnetic phase disappear.     

The decay process 11ΛB → π− + 11C

The branching ratios are calculated for ¹¹_ΛB decay to the ¹¹C ground and excited states below 8 MeV for two possible spin values of ¹¹_ΛB. It is found that the decay rate to the ¹¹C^★ state at E^★ = 6.48 MeV is comparable in magnitude to that leading to the ¹¹C ground state if $\text{J(}{}^{11}{}_{\mathrm{\Lambda }}\text{B}\text{) =}\text{5}\text{2}$ is assumed. This result, unlike the branching ratios calculated for the $\text{J(}{}^{11}{}_{\mathrm{\Lambda }}\text{B}\text{) =}\text{7}\text{2}$ case, is in accord with experiment and lends support to the assumption that $\text{J =}\text{5}\text{2}$ holds for ¹¹_ΛB. The necessity of the reinterpretation of some of the so-called ¹³_ΛC events in terms of ${}^{11}{}_{\mathrm{\Lambda }}\text{B}\text{→ π}{}^{\mathrm{?}}\text{+}{}^{11}\text{C}{}^1$ is indicated.     

The decay processes Λ8Li → π− + 8Be1 (∼ 17 MeV)

The branching ratio is calculated for _Λ⁸Li decay to the (2⁺) ⁸Be¹ states near 17 MeV, using intermediate coupling wave functions for _Λ⁸Li and for the relevant ⁸Be¹ states. It is pointed out that this ratio is sensitive primarily to a mixing angle ? in the _Λ⁸Li wave function. Within one standard deviation, the data allow two ranges (+0.05 to +0.25 rad and +1.10 to +1.25 rad) for the value of ?. The further requirement that there also be acceptable agreement between the angular distribution expected for the subsequent ${}^8\text{Be}{}^1\text{(? 17}\text{MeV → 2}{}^4\text{He}$ decay and the data, shifts these allowed ranges for ?, to (+0.13 to 0.40) rad and (+0.9 to +1.2) rad. It is predicted that the dominant transition should be to ⁸Be¹ (16.6 MeV), as is observed to be the case, rather than to ⁸Be¹ (16.9 MeV). The interpretation of these values for ? is discussed in some detail and their implications for intermediate coupling shell-model calculations of Λ-hypernuclear wave functions are considered.     

The 5T2g → 5Eg absorption in MgO: Fe2+

At helium temperatures two sharp lines at 9350 and 9510 cm^?1 have been observed for the first tune on the low-energy side of the broad double-peaked absorption corresponding to the ${}^5\text{T}{}_{\mathrm{2g}}\text{→}{}^5\text{E}{}_{\mathrm{g}}$ transition in Fe²⁺ at the octahedral site in MgO. The lower energy line has a half width of 4 cm^?1; Zeeman measurements show that it is of magnetic dipole origin. The Zeeman spectra are consistent with those expected for a pure electronic transition from the (⁵T_2g)T_2g ground state to the ⁵E_g excited state. The second line, with a halfwidth of ~ 35 cm^?1, a vibrational sideband.