Epitaxial low-temperature growth of In<Subscript>0.5</Subscript>Ga<Subscript>0.5</Subscript>As films on GaAs(100) and GaAs(111)<Emphasis Type="Italic">A</Emphasis> substrates using a metamorphic buffer

A complex investigation of epitaxial In_0.5Ga_0.5As films grown on GaAs substrates with crystallographic orientations of (100) and (111)A in the standard high- and low-temperature modes has been performed. The parameters of the GaAs substrate and In_0.5Ga_0.5As film were matched using the technology of step-graded metamorphic buffer. The electrical and structural characteristics of the grown samples have been studied by the van der Pauw method, atomic force microscopy, scanning electron microscopy, and transmission/ scanning electron microscopy. The surface morphology is found to correlate with the sample growth temperature and doping with silicon. It is revealed that doping of low-temperature In_0.5Ga_0.5As layers with silicon significantly reduces both the surface roughness and highly improves the structural quality. Pores 50–100 nm in size are found in the low-temperature samples.     

Electrical and structural characteristics of metamorphic In0.38Al0.62As/In0.37Ga0.63As/In0.38Al0.62As HEMT nanoheterostructures

The influence of the metamorphic buffer design and epitaxial growth conditions on the electrical and structural characteristics of metamorphic In_0.38Al_0.62As/In_0.37Ga_0.63As/In_0.38Al_0.62As high electron mobility transistor (MHEMT) nanoheterostructures has been investigated. The samples were grown on GaAs(100) substrates by molecular beam epitaxy. The active regions of the nanoheterostructures are identical, while the metamorphic buffer In _x Al_{1 ? x} As is formed with a linear or stepwise (by Δ _x = 0.05) increase in the indium content over depth. It is found that MHEMT nanoheterostructures with a step metamorphic buffer have fewer defects and possess higher values of two-dimensional electron gas mobility at T = 77 K. The structures of the active region and metamorphic buffer have been thoroughly studied by transmission electron microscopy. It is shown that the relaxation of metamorphic buffer in the heterostructures under consideration is accompanied by the formation of structural defects of the following types: dislocations, microtwins, stacking faults, and wurtzite phase inclusions several nanometers in size.     

Crystal structure of Ga<Subscript>0.5</Subscript>In<Subscript>1.5</Subscript>Se<Subscript>3</Subscript> solid solution

A solid solution of the GaIn₃Se₆ (2Ga_0.5In_1.5Se₃) composition with a hexagonal lattice (a = 7.051(3) Å, c = 19.148(2) Å, sp. gr. P6₁, z = 6, V = 824.4332(4) ų, ρ = 5.379(2) g/cm³) has been synthesized as a result of alloying Ga, In, and Se elements with a metal ratio of 1: 3. It was established that six out of nine In atoms in the lattice are located in a trigonal bipyramid, while the other three In atoms and three Ga atoms have a tetrahedral coordination.     

Gallium vacancy ordering in Ga<Subscript>2</Subscript>Se<Subscript>3</Subscript> thin layers on Si(100), Si(111), and Si(123) substrates

Thin Ga₂Se₃ layers deposited on silicon substrates with the (100), (111), and (123) orientations are studied by transmission electron microscopy and X-ray microanalysis. Some features and regularities of the stoichiometric gallium vacancy ordering at different substrate orientations are discussed. The Ga₃Se₄(100)с(2 × 2) and Ga₂Se₃(111)(√3 × √3)-R30° ordered structures are formed on the Si(100) and Si(111) surfaces, respectively.     

Structural and electrophysical analysis of MHEMT In0.70Al0.30As/In0.75Ga0.25As nanoheterostructures with different strain distributions in metamorphic buffer

A complex structural and electrophysical analysis of MHEMT In_0.70Al_0.30As/In_0.75Ga_0.25As nanoheterostructures grown on (100)GaAs substrates using two radically new designs of metamorphic buffer (providing different internal-strain distributions) has been performed. The lattice parameters of the constant-composition layers entering the metamorphic buffer have been determined by X-ray diffraction using symmetric and asymmetric (400) and (422) reflections. It is shown that, having chosen a proper design of metamorphic buffer in nanoheterostructures on GaAs substrates, it is possible to obtain electron mobility and concentration comparable with those for nanoheterostructures on InP substrates. The compositions of smoothing layers, determined from the peaks on rocking curves, are found agree well with the process values.     

Stabilization of lattice period in quinary solid solutions of the <Emphasis Type="Italic">A</Emphasis><Superscript>3</Superscript><Emphasis Type="Italic">B</Emphasis><Superscript>5</Superscript> compounds

The stabilizing effect of elastic strains on the lattice period of a quinary solid solution is considered. The expression for the stabilization factor for quinary solid solutions of the A_xB_1?xC_yD_zE_1?y?z type is derived. It is shown that the stabilizing influence of the substrate sharply increases in the vicinity of the region of the chemical spinodal. The stabilization factors are calculated for the Ga_xIn_1?xP_yAs_zSb_1?y?z and A1_xGa_yIn_1?x?yP_zAs_1?z quinary solid solutions isoperiodic to InAs, GaSb, and GaAs. It is shown that in the region of thermodynamic instability the stabilization factor has negative values. The changes in the composition of the above elastically strained quinary solid solutions are analyzed with respect to the equilibrium composition. It is also shown that stabilization of the lattice period does not signify the stabilization of its composition.     

Crystal structure of the new radical cation salt (<Emphasis Type="Italic">DOET</Emphasis>)<Subscript>4</Subscript>[Fe(CN)<Subscript>5</Subscript>NO]<Subscript>1.25</Subscript>(C<Subscript>6</Subscript>H<Subscript>5</Subscript>Cl)<Subscript>0.75</Subscript>

A new radical cation salt based on 4,5-(1,4-dioxanediyl-2,3-dithio)-4′,5′-ethylenedithiotetrathiafulvalene (DOET) with the photochromic anion [Fe(CN)₅NO]^2?, namely, (DOET)₄[Fe(CN)₅ NO]_1.25(C₆H₅Cl)_0.75, is synthesized. Single crystals of this salt are studied using X-ray diffraction [a = 10.398(2) Å, b = 11.168(2) Å, c = 18.499(4) Å, α = 103.14(3)°, β = 92.80(3)°, γ = 106.02(3)°, V = 1996.3(7) ų, space group \(P\bar 1\), and Z = 1]. In the structure, radical cation layers alternate with anion layers along the c axis. The centrosymmetric dimers are formed by DOET radical cations in the donor layer with packing of the β type. Like the vast majority of DOET-based salts, the new salt possesses semiconductor properties.     

Thermally stimulated relaxation of misfit strains in Si<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Ge<Subscript>x</Subscript>/Si(100) heterostructures with different buffer layers

The regularities of the defect formation in Si_1−x Ge_x/Si heterostructures (x = 0.15 and 0.30), consisting of a low-temperature Si buffer layer and a SiGe solid solution, during their growth and subsequent annealings at temperatures 550–650°C are investigated by the methods of optical and transmission electron microscopy and X-ray diffraction. It is shown that the misfit-strain relaxation by plastic deformation under the conditions studied occurs most intensively in heterostructures with low-temperature SiGe buffer layers. The maximum degree of misfit-strain relaxation (no higher than 45%) is observed in the heterostructures with x = 0.30 after annealing at 650°C. The results obtained are explained by the effect of the nature and concentration of dislocation-nucleation centers, existing in low-temperature buffer layers, on the characteristics of the formation of a dislocation structure in the heterostructures under consideration.     

Proton-Conducting Composites Based on the Cs<Subscript>4</Subscript>(HSO<Subscript>4</Subscript>)<Subscript>3</Subscript>(H<Subscript>2</Subscript>PO<Subscript>4</Subscript>) Compound

Proton-conducting composites xCs₄(HSO₄)₃(H₂PO₄) + (1–x)AlPO₄ in the composition range x = 0.9–0.5 have been obtained. Their transport properties are studied by impedance spectroscopy. The dependences of the phase composition of the materials on the component ratio are investigated by X-ray diffraction analysis. The spatial phase distribution in the materials is analyzed using scanning electron microscopy.     

High-pressure synthesis and magnetic properties of Bi<Subscript>0.5</Subscript>D<Subscript>0.5</Subscript>MnO<Subscript>3</Subscript> (<Emphasis Type="Italic">D</Emphasis> = Pb,Ba) solid solutions

Perovskites Bi_0.5D_0.5MnO₃(D = Pb, Ba) were prepared under high pressure (4 GPa) at 1200–1300°C. According to the X-ray diffraction data, crystalline Bi_0.5Pb_0.5MnO₃ has a tetragonal unit cell with the parameters a = 3.940 Å and c = 3.800 Å, whereas Bi_0.5Ba_0.5MnO₃ crystals are cubic with a = 3.940 Å. It is concluded from magnetic studies that lead-containing manganite is an antiferromagnet with T_N = 120 K, whereas Bi_0.5Ba_0.5MnO₃ is a spin glass with spin-freezing temperature T _f = 38 K. Both compounds are decomposed upon heating in air at temperatures above 500°C. With the use of synthesis in air, Bi_0.5Ca_{0.5 ? x}D _x MnO₃ solid solutions with x as high as 0.25 were obtained.     

Synthesis and Electrical Properties of a Fluorite-Like Nd<Subscript>5</Subscript>Mo<Subscript>3</Subscript>O<Subscript>16</Subscript> Compound with Partial Substitution of Molybdenum by Tungsten,Niobium, or Vanadium

The phase formation of Nd₅Mo_{3 – x}W _x O_16.5, Nd₅Mo_{3 – x}Nb _x O_{16.5 – х/2}, and Nd₅Mo_{3 – x}V _x O_{16.5 – х/2} solid solutions based on a fluorite-like Nd₅Mo₃O_16.5 compound (mixed conductor with interstitial oxygen conductivity) has been studied. The electrical conductivity of doped compounds obeys the Arrhenius law and, at a low impurity content, is as high as 0.03–0.08 S/cm at 800°C. Substitution of Mo⁶⁺ cations by V⁵⁺ and Nb⁵⁺ cations reduces the interstitial oxygen content, which causes a decrease in the solid-solution electrical conductivity by 1–2 orders of magnitude and a decrease in the cubic unit-cell parameter. A wide diffuse anomaly with a maximum of about 1500–4000 has been observed in the temperature dependence of the permittivity for all single-crystal and polycrystalline samples in the range of 300–900°C.     

Synthesis,physical properties,and atomic structure of niobium-doped RbTiOPO<Subscript>4</Subscript> crystals

Single crystals of solid solutions Rb_1?xTi_1?xNb_xOPO₄(RTP: Nb) were grown and the temperature dependences of their dielectric and nonlinear optical properties and electric conductivity were studied. The maximum possible niobium content in these crystals is close to x = 0.1. The niobium impurities decelerate growth of {100} faces, and crystals take a plate-like habit. With increasing doping level, ferroelectric phase transitions diffuse and their temperature decreases. A specific feature of the dielectric properties of RTP: Nb crystals is the appearance of a broad relaxation maximum ε₃₃ in the temperature range 200–600°C caused by the formation of vacancies in the rubidium cation sublattice. The intensity of second-harmonic generation under laser irradiation decreases with increasing niobium content. The atomic structure of a crystal with x = 0.01 is studied and it is established that niobium substitutes for titanium only in Ti(1) positions.     

The Changes of Thermal,Dielectric, and Optical Properties at Insertion of Small Concentrations of Ammonium to K<Subscript>3</Subscript>H(SO<Subscript>4</Subscript>)<Subscript>2</Subscript> Crystals

The structure of (K_1–x(NH₄)_x)₃H(SO₄)₂ crystals with a low ammonium concentration and the behavior of their thermal, optical, and dielectric properties in a temperature range of 275–500 K have been investigated to clarify the influence of doping on the phase transition kinetics. An examination of unit-cell parameters of (K_{1 – x}(NH₄)_x)₃H(SO₄)₂ single crystals has confirmed the existence of a superprotonic phase transition at a temperature of ≈450K. The conducting properties of single-crystal and polycrystalline samples have been studied.     

Crystal-structure refinement of Sr<Subscript>3</Subscript>Ga<Subscript>2</Subscript>Ge<Subscript>4</Subscript>O<Subscript>14</Subscript>

The accurate X-ray diffraction study of a Sr₃Ga₂Ge₄O₁₄ crystal was performed based on two X-ray diffraction data sets collected on a diffractometer equipped with a CCD area detector (a = 8.2776(2), c = 5.0415(1) Å, sp. gr. P321, Z = 1, R/wR = 0.78/0.69%, 3645 independent reflections). The structure of Sr₃Ga₂Ge₄O₁₄ is characterized by the presence of two mixed cation sites, which is accompanied by the anharmonic motion not only of cations, but also of two oxygen atoms in general positions. The structures and electromechanical characteristics of Sr₃Ga₂Ge₄O₁₄ and Sr₃TaGa₃Si₂O₁₄ were compared. The Sr₃Ga₂Ge₄O₁₄ structure is characterized by a larger elongation of the Sr polyhedron along the a axis and, simultaneously, by the smaller unit-cell parameter a compared with Sr₃TaGa₃Si₂O₁₄, which correlates with the ratio of the piezoelectric coefficients d ₁₁. The absence of thermally stable directions in the crystals of Sr₃Ga₂Ge₄O₁₄ and Sr₃TaGa₃Si₂O₁₄ is consistent with the absence of the anomalous temperature dependence of the dielectric constant ?₃₃.     

Growth and structure of La<Subscript>3</Subscript>Zr<Subscript>0.5</Subscript>Ga<Subscript>5</Subscript>Si<Subscript>0.5</Subscript>O<Subscript>14</Subscript> crystals

The complete X-ray structure determination of Czochralski grown La₃Zr_0.5Ga₅Si_0.5O₁₄ single crystals with the Ca₃Ga₂Ge₄O₁₄ structure is performed (sp. gr. P321, a = 8.226(1) Å, c = 5.1374(6) Å, Z = 1, Mo K_α1 radiation, 1920 crystallographically independent reflections, R = 0.0166, R_w = 0.0192). The absolute structure is determined. It is shown that possible transition of some of La atoms (～1.2%) from the 3e to 6g position may give rise to the formation of structural defects.     

Metamorphic growth of tensile strained GaInP on GaAs substrate

Optical and structural properties of tensile strained graded Ga_xIn_1−xP buffers grown on GaAs substrate have been studied by photoluminescence, X-ray diffraction, atomic force microscopy, and scanning electron microscopy measurements. The Ga composition in the graded buffer layers was varied from x=0.51 (lattice matched to GaAs) to x=0.66 (1% lattice mismatch to GaAs). The optimal growth temperature for the graded buffer layer was found to be about 80–100 °C lower than that for the lattice matched GaInP growth. The photoluminescence intensity and surface smoothness of the Ga_0.66In_0.34P layer grown on top of the graded buffer were strongly enhanced by temperature optimization. The relaxation of tensile GaInP was found to be highly anisotropic. A 1.5 μm thick graded buffer led to a 92% average relaxation and a room temperature photoluminescence peak wavelength of 596 nm.     

Phase transitions in compounds with the Ca<Subscript>3</Subscript>Ga<Subscript>2</Subscript>Ge<Subscript>4</Subscript>O<Subscript>14</Subscript> structure

Possible structural changes described by the group-subgroup relationships in the Ca₃Ga₂Ge₄O₁₄-type structure (sp. gr. P321) are considered. The most probable phase transitions seem to be those accompanied by lowering of the symmetry to the maximal non-isomorphic subgroups P3 and C2. It is shown that only destructive phase transitions accompanied by symmetry rise up to the minimal non-isomorphic supergroups for the given structure type can take place. The change of the trigonal symmetry to monoclinic is revealed in La₃SbZn₃Ge₂O₁₄, whose crystal structure is refined as a derivative structure of the Ca₃Ga₂Ge₄O₁₄ structure type within the sp. gr. A2 (C2). At ～250°C, La₃SbZn₃Ge₂O₁₄ undergoes a reversible phase transition accompanied by symmetry rise, A2 ? P321. Similar phase transitions, P321 ? A2, are also observed in La₃Nb_0.5Ga_5.5O₁₄ and La₃Ta_0.5Ga_5.5O₁₄ under the hydrostatic pressures 12.4(3) and 11.7(3) GPa, respectively. The mechanisms of compression and phase transition are based on the anisotropic compressibility of a layer structure. With the attainment of the critical stress level in the structure, the elevated compressibility in the (ab) plane gives rise to a phase transition accompanied by the loss of the threefold axis. Attempts to reveal low-temperature phase transitions in a number of representatives of the langasite family have failed.     

Synthesis and electrical properties of Aurivillius phases in the Bi<Subscript>2</Subscript>MoO<Subscript>6</Subscript>-Bi<Subscript>2</Subscript>VO<Subscript>5.5</Subscript> system

To search for new oxygen conductive phases, a series of Bi₂V_{1 ? x} Mo_xO_{5.5 + x/2} ceramic samples have been synthesized in which the extreme compositions Bi₂VO_5.5 (x = 0) and Bi₂MoO₆ (x = 1) are single-layer Aurivillius phases having ferroelectric properties and high ionic oxide conductivity. It is established that single-layer Aurivillius phases exist in the composition ranges 0 ≤ x ≤ 0.1 and 0.9 ≤ x ≤ 1. Additional phases with BiVO₄ and Bi₆Mo₂O₁₅ structures are found in the range 0.2 ≤ x ≤ 0.8. The presence of molybdenum stabilizes the orthorhombic β-Bi₂VO_5.5 phase at room temperature. The conductivity of solid solutions based on Bi₂VO_5.5 differs only slightly from that of pure bismuth vanadate. Conductivity of solid solutions based on Bi₂MoO₆ is half an order of magnitude higher than that of pure bismuth molybdate.     

X-ray diagnostics of P-HEMT AlGaAs/InGaAs/GaAs structures

The structural characteristics of the P-HEMT AlGaAs/InGaAs/GaAs heterostructure have been studied by high-resolution X-ray diffractometry. The parameters of the heterostructure layers were determined by simultaneous analysis of the X-ray reflection curves for the (004) and (113) crystallographic planes. Interface diffusion has been established for the In_yGa_1?yAs quantum well and the Al_xGa_1?x As spacer layer, which are characterized by reconstructed profiles of the lattice parameter distribution and anisotropic distribution of random displacements in the layer plane and in the perpendicular direction.     

Molecular structure of [(C<Subscript>5</Subscript>H<Subscript>5</Subscript>)<Subscript>2</Subscript>(C<Subscript>5</Subscript>H<Subscript>4</Subscript>CH<Subscript>3</Subscript>)(C<Subscript>4</Subscript>H<Subscript>8</Subscript>O)Sm]

The mixed tris-cyclopentadienyl tetrahydrofuranato samarium complex bis-(cyclopentadienyl) methylcyclopentadienyl tetrahydrofuranato samarium (I) was synthesized by reaction of (C₅H₅)₂SmCl with methyl cyclopentadienyl sodium in THF. [(C₅H₅)₂(C₅H₄CH₃)(C₄H₈O)Sm] (I) was characterized by elemental analyses—IR spectra and MS spectra. The structure of [(C₅H₅)₂(C₅H₄CH₃)(C₄H₈O)Sm] (I), which has two slightly different independent molecules per asymmetric unit, has been elucidated through complete X-ray analysis. The crystals are monoclinic, with a = 12.791(3) Å, b = 10.467(2) Å, c = 26.108(5) Å, β = 98.22(2)°, and space group Cc, R = 0.0381 for 2103 observed-reflection with I ≥ 3σ(I).