Small-signal modeling approach to 0.1-μm metamorphic HEMTs for W-band coplanar MMIC amplifier design

We present an accurate and reliable modeling method for designing the W-band (75-110 GHz) small-signal millimeter-wave monolithic integrated circuit (MMIC) amplifiers with the GaAs-based 0.1-μm metamorphic high electron-mobility transistors (MHEMTs). For this, we propose an improved process control monitoring (PCM) pattern layout for the MHEMT modeling and a small-signal equivalent circuit model of 17 elements accounting for the feedback capacitance (C_pgd) and output conductance time delay (τ_ds). The modeling technique adopts a gradient optimizer with the initial values of the extrinsic parameter set determined from the cold-FET measurement avoiding the forward gate-biasing in a frequency range of 0.5-65 GHz and the intrinsic parameter set obtained at an operating hot-FET condition in our W-band design frequency range. On the basis of the proposed small-signal equivalent circuit model, we design and fabricate 1- and 2-stage W-band MMIC amplifiers using the MHEMTs (30-μm gate width, 2 gate fingers) and a coplanar waveguide-based MMIC process. The measurements of the fabricated MMIC amplifiers show an excellent agreement with simulation data in the design frequency range.     

An Approach to Linear Scalable DH-PHEMT Model for Millimeterwave Application

This paper describes a scalable small-signal equivalent circuit for 0.25 m gatelength Double Heterojunction delta-doped PHEMTs. The scaling rules for all elements except the pad capacitances and bondwire inductances have been determined. Good agreement is obtained between simulation results and measured results for 2 times 20 m , 2 times 40 m, 2 times 60 m, 2 times 100 m gate width (number of gate fingers times unit gate width) DH PHEMT.     

Narrow gated Raman and luminescence of explosives

Narrow gated Raman spectroscopy is used to detect Raman signals of explosives, which are usually screened by their intrinsic or background luminescence. It was found that the Raman/luminescence ratio is improved by 2-10 times with gate width of 500 ps compared to the 10 ns gate. It enables in certain cases to combine the luminescence suppression by gating with higher identification ability of Raman signals achievable with green excitation.     

Transient response of infrared photoconductors: The roles of contacts and space charge

The transient response of an extrinsic photoconductor, with two implanted ohmic contacts, has been calculated by solving the full continuity equation using a variable finite difference technique. For a step function in photon flux under constant voltage bias, transient times ranging from 10^–4 to 10^–2 s have been determined for 20 to 200 m thick detectors under the low background fluxes typical of infrared astronomy. The transient response consists of a fast and a slow component, with their relative magnitudes dependent on the ratio of diffusion and drift lengths to the device length. The characteristic time for the fast component is determined, as expected, by the carrier lifetime, but a slower transient response is also present which is controlled by out-diffusion and sweep-out and the establishment of a counteracting electric field barrier. The effects of material and operating parameters have been investigated, and an analytical model is presented for estimating transient response times for any extrinsic photoconductor. Contact-limited transient response will be most limiting for operation of thin device structures under very low photon backgrounds.     

激光距离选通成像门宽对图像信噪比影响

为了解不同激光测距精度下的选通成像信噪比,本文利用外场实验系统对不同门宽条件下的图像信噪比进行了分析。首先,根据激光距离选通成像理论建立作用距离模型,初步确定系统各项参数。在此基础上,构建外场实验系统,并利用实验系统进行外场实验研究。对不同门宽条件下的图像进行分析对比,获得门宽与图像信噪比关系曲线。实验结果表明:在门宽2 μs范围内,图像信噪比≥8,图像质量满足自动识别要求,充分证明了距离选通成像系统对测距精度要求较低,完全满足实际应用需求。     

SIMPLE TECHNIQUES FOR DETERMINING THE SMALL-SIGNAL EQUIVALENT CIRCUIT OF MESFET’s

Simple techniques for determining the broadband small signal equivalent circuit (SSEC) of MESFETs are presented in this paper. The intrinsic elements are calculated using two-dimensional method from the Y parameters, which are obtained from the Fourier analysis of the device transient response to voltage-step perturbations at the drain and gate electrodes. Whereas, the parasitic external elements are determined by simple approximations used in transmission line modeling. In addition, a new technique is also proposed to determine the source and drain series resistances. A comparison of the SSEC of three different MESFETs technologies shows that the MESFETs on GaN and 4H-SiC are suitable for high power applications. The method used to determine the intrinsic elements is validated with simulated data obtained by Monte Carlo method.     

Effect of a phase factor on the minimum time of a quantum gate

A relationship between the phase factor of a quantum gate, the layout of energy levels of its effective Hamiltonian, and the implementation time of the gate is demonstrated. By an example of the direct and inverse quantum Fourier transforms (QFT) gates for a qutrit represented by a quadrupole nucleus with spin I = 1, as well as for a system of two qubits (I = 1/2), effective Hamiltonians and minimum implementation times corresponding to different global phases are obtained. Implementation schemes are proposed for these Hamiltonians by the nuclear magnetic resonance (NMR) technique with the use of sequences of radio-frequency (RF) pulses separated by intervals of free evolution. Analytic results for the minimum times of gates are in agreement with the results obtained by numerical optimization methods. The phase considered is divided into dynamic and geometric parts.     

Free vibration analysis of a cracked beam by finite element method

In this paper, the natural frequencies and mode shapes of a cracked beam are obtained using the finite element method. An ‘overall additional flexibility matrix’, instead of the ‘local additional flexibility matrix’, is added to the flexibility matrix of the corresponding intact beam element to obtain the total flexibility matrix, and therefore the stiffness matrix. Compared with analytical results, the new stiffness matrix obtained using the overall additional flexibility matrix can give more accurate natural frequencies than those resulted from using the local additional flexibility matrix. All the elements in the overall additional flexibility matrix are computed by 128-point (1D) or (128×128)-point (2D) Gauss quadrature, and then further best fitted using the least-squares method. The explicit form best-fitted formulas agree very well with the numerical integration results, and are very convenient for use and valuable for further reference. In addition, the authors constructed a shape function that can perfectly satisfy the local flexibility conditions at the crack locations, which can give more accurate vibration modes.     

Erratum to: VCSEL-based calibration-free carbon monoxide sensor at 2.3 μm with in-line reference cell

A compact and calibration-free carbon monoxide sensor approach utilizing the wide current-tunability of 2.3 μm VCSELs is reported. A separate reference cell is avoided by filling the reference gas (methane) in the photodetector housing. By applying bandwidth optimized wide/narrow wavelength scan concept, inherent wavelength scale calibration and self-monitoring of the sensor are realized, with which the laser aging process is also under control. An efficient linear least-squares curve fit using an analytical signal model for the narrow scan spectrum is done, utilizing the knowledge of the absolute wavelength scale and also the estimated WMS modulation amplitude obtained from the wide scan. The scan width of the narrow spectrum is optimized aiming at the maximum signal to noise ratio on the determined CO concentration. These concepts are universal and can be utilized for optical sensing of other gases as well and the sensor was tested under diverse applications e.g. fire detection and combustion optimization.     

石屏井水中金属元素的分析

用原子吸收光谱法测定了云南省石屏县城用于直接点制豆腐的城内(北门、西门、南门)和城郊天然井水中Ca、Mg、Fe、Zn、Cu、Co、Cr、Ni和Cd等9种金属元素的含量,方法的相对标准偏差在0.28%—1.53%之间,回收率在97.68%—107.30%之间,分析结果满意。城中天然井水Ca和Mg含量非常高,Ca和Mg含量分别在207.83—268.50μg·mL-1和30.88—35.41μg·mL-1之间,其总硬度(以CaCO3计)在646.15—816.30μg·mL-1之间,为极硬水,西门外城郊井水中Ca含量仅为99.10μg·mL-1,Mg含量28.14μg·mL-1,都未检出Cd,其余6种金属元素在城中井水与郊外井水中的含量差别不大,且都较小;城中井水Ca、Mg含量:北门井水西门井水南门井水,井水中Ca和Mg含量在207.83、30.88μg·mL-1及其以上时,具有石膏或卤水凝固剂的作用,可直接点制豆腐;城中井水中Fe、Zn、Cu、Cr、Ni和Co含量大小为FeZnCrNiCuCo。     

液相基质中重金属元素激光诱导击穿光谱实验参数的优化

针对混合溶液中重金属元素的激光诱导击穿光谱(LIBS)测量系统,为提高测量系统的检测灵敏度,以提高混合溶液中Ca和Cr金属元素LIBS光谱线强度的信噪比为目标,对LIBS测量系统中的激光脉冲能量、液相样品流速、ICCD门宽、延时等实验参数进行了优化,得到最优化参数激光脉冲能量、样品流速、ICCD门宽、延时分别为35 m J、30 ml/min、1400 ns和2400 ns,为降低LIBS技术应用于混合溶液中痕量重金属元素的检出限提供了实验参数支撑.     

Propagation of random electromagnetic beams through axially nonsymmetrical optical systems

When random electromagnetic beams passing through axially nonsymmetrical ABCD optical systems, the analytical formula for the transformation of the elements of 2 × 2 cross-spectral density matrix is obtained with the help of vector integration. We derive analytical expressions of the spectral degree of polarization, the spectral degree of coherence, and the spectral density in any output plane z > 0. Some numerical calculations are illustrated relating to the electromagnetic Gaussian Schell-model beams propagating through such optical systems.     

主动中子多重性铀质量测量模拟研究

中子多重性技术常用于测量和核查核材料,尤其针对具有较厚屏蔽的对象具有不可替代的优势。钚的自发裂变率较高,可以采用被动测量方法,目前已有多款不同的测量装置。然而铀材料的自发裂变率较低只能采用主动测量方法。现有的主动井型符合计数器（AWCC）能够进行主动中子多重性测量铀材料质量,但依然存在探测效率较低,Am-Li中子源产生偶然符合大等缺点。为提高铀材料测量的效率和精度,对主动中子多重性测量方法开展深入研究非常必要。本文参考AWCC模型,利用Geant4软件对探测器和粒子的输运过程进行建模。研究了多重性移位寄存器的不同符合门宽、不同延迟时间对铀测量结果相对偏差的影响规律。计数器的最佳门宽为44 μs,门宽取值范围在计数器衰减时间的1.5倍左右合适;延迟时间大于3倍计数器衰减时间后,相对偏差显著减少。最后讨论了235U富集度变化对主动中子多重性测量结果的影响。为后续主动中子多重性铀质量测量仪器的设计提供了参考。     

Characteristics of sandwich-structured Al2O3/HfO2/Al2O3 gate dielectric films on ultra-thin silicon-on-insulator substrates

Sandwich-structure Al₂O₃/HfO₂/Al₂O₃ gate dielectric films were grown on ultra-thin silicon-on-insulator (SOI) substrates by vacuum electron beam evaporation (EB-PVD) method. AFM and TEM observations showed that the films remained amorphous even after post-annealing treatment at 950 °C with smooth surface and clean silicon interface. EDX- and XPS-analysis results revealed no silicate or silicide at the silicon interface. The equivalent oxide thickness was 3 nm and the dielectric constant was around 7.2, as determined by electrical measurements. A fixed charge density of 3 × 10¹⁰ cm⁻² and a leakage current of 5 × 10⁻⁷A/cm² at 2 V gate bias were achieved for Au/gate stack /Si/SiO₂/Si/Au MIS capacitors. Post-annealing treatment was found to effectively reduce trap density, but increase in annealing temperature did not made any significant difference in the electrical performance.     

Impurity absorption in gallium phosphide doped with zinc and oxygen

The extrinsic optical properties were investigated in homogeneous GaP crystals at room temperature. The transmission of extrinsic light is influenced by a simultaneous illumination of an additional light of different frequency. This light changes the occupancy of an impurity level. A simple theory is given, which relates this change in transmission of the extrinsic light to the optical cross sections of the impurity level. We had to use steady light because of the large relaxation time, but still obtained a resolution of 2 × 10⁻⁵ in the relative transmission change. The spectral dependence of the optical cross sections for an impurity level 0·9 eV below the conduction band were calculated. Another level approximately 1·85 eV from a band edge was also seen in these measurements, but it had complex optical properties. Both levels were seen in a direct measurement of the absorption coefficient.     

Electrical characterization and carrier transportation in Hf-silicate dielectrics using ALD gate stacks for 90 nm node MOSFETs

Metal-oxide-semiconductor capacitors (MOSCs) and metal-oxide-semiconductor field-effect transistors (MOSFETs) incorporating hafnium silicate (Hf-silicate) dielectrics were fabricated by using atomic layer deposition (ALD). The electrical properties of these Hf-silicate thin films with various postnitridation annealing (PNA) temperatures were then examined to find the best nitridation condition. It is found that the best conditions to achieve the lowest gate leakage current and best equivalent oxide thickness (EOT) are when PNA is performed at 800 °C in NH₃ ambient for 60 s. To understand the obtained film, carrier transportation mechanisms, the temperature dependence of the leakage current was measured from 300 K to 500 K for both gate injection and substrate injection. The result reveals that the leakage mechanisms involve Schottky emission at high temperature and low electrical field and Poole-Frenkle emission at low temperature and high electrical field. The barrier heights of poly-Si/Hf-silicate and Hf-silicate/Si interfaces extracted from Schottky emission are 1.1 eV and 1.04 eV, respectively. The interface traps per unit area, the mean density of interface traps per area and energy and the mean capture cross-section are determined about 8.1 × 10¹⁰ cm⁻², 2.7 × 10¹¹ cm⁻² eV⁻¹ and 6.4 × 10⁻¹⁵ cm⁻² using charge pumping method.     

Motional narrowing under diffusion of two spin sub-lattices in LiNaSO4

An expression for the dipolar correlation function characterizing the fluctuations of the Hamiltonian under uncorrelated diffusion of two cationic sub-lattices in a solid has been obtained. A corresponding formula, which can be used for fitting the two-step temperature dependencies of the NMR line width, has been deduced. We also considered the case of a distribution of correlation times and deduced a corresponding analytical fitting function. Elaborated expressions have been applied to the NMR line width analysis of LiNaSO₄ in the temperature range 295–788 K.     

Analytical threshold voltage model for strained silicon GAA-TFET

Tunnel field effect transistors(TFETs) are promising devices for low power applications.An analytical threshold voltage model,based on the channel surface potential and electric field obtained by solving the 2D Poisson's equation,for strained silicon gate all around TFETs is proposed.The variation of the threshold voltage with device parameters,such as the strain(Ge mole fraction x),gate oxide thickness,gate oxide permittivity,and channel length has also been investigated.The threshold voltage model is extracted using the peak transconductance method and is verified by good agreement with the results obtained from the TCAD simulation.     

Nonlinear optical rectification in asymmetric coupled quantum wells

The optical rectification (OR) in the asymmetric coupled quantum wells (ACQWs) is calculated theoretically. The dependence of the OR on the width of the right-well and the barrier is studied. The analytical expression of the optical rectification coefficient is obtained by using the compact density-matrix approach and the iterative method, and the numerical calculations are presented for a typical GaAs/Al_xGa_1 − xAs ACQW. The results obtained show that the OR efficient can reach the magnitude of 10⁻⁴ m/V in this ACQW system, which is 1-2 orders higher than that in single quantum systems. Moreover, the OR coefficient is strongly dependent on the widths of the barrier and the right-well of the ACQWs. An appropriate choice for the width of the barrier and the right-well of the ACQWs can induce a larger OR coefficient.     

周期排列的H-空气槽光学特性研究

利用电子束直写系统和反应离子束刻蚀的方法制作了周期性排列H-形空气槽.样品的参量：金膜的厚度为120 nm,石英基底的厚度0.8 mm（其中有5 nm厚的铬层）,样品是由30×30个单个H-形周期排列形成的,总体尺寸为40×40 μm2.每个H-形之间的周期为1.1 μm,H-形的臂长均为500 nm,空气槽的宽度为120 nm.然后用实验的方法测量了在近红外波段的透过曲线,在近红外波段1.6 μm处的透过率约为16.3%,用传输矩阵的方法对H-形空气槽结构进行了理论模拟,实验与理论模拟结果吻合较好.随后研究了当入射光的偏振方向与H-形结构的长轴之间的夹角分别为0°、30°、45°、60°和90°时透过曲线的变化情况.通过实验和理论表明,表面等离子体在这种特殊的结构中仍然存在,并且在光的增强透过起着决定性的作用.