Z-scan determination of the third-order optical nonlinearity of a triphenylmethane dye using 633 nm He–Ne laser

The third-order nonlinear optical response of a triphenylmethane dye (Acid blue 7) was studied using the Z-scan technique with a continuous-wave He–Ne laser radiation at 633 nm. The magnitude and sign of the third-order nonlinear refractive index n₂ of aqueous solution of Acid blue 7 dye were determined; the negative sign indicates a self-defocusing optical nonlinearity in the sample studied. The negative nonlinear refractive index n₂ and nonlinear absorption coefficient β were estimated to be −1.88 × 10⁻⁷ cm²/W and −3.08 × 10⁻³ cm/W, respectively, corresponding to Re(χ⁽³⁾) = −8.35 × 10⁻⁶ esu, and Im(χ⁽³⁾) = −6.88 × 10⁻⁷ esu. The experimental results show that Acid blue 7 dye have potential applications in nonlinear optics.     

The third-order optical nonlinearity of The pyrochlore phase 0.7Pb(Mg1/3Nb2/3)O3–0.3PbTiO3 thin film on quartz

The xPb(Mg_1/3Nb_2/3)O₃–(1−x)PbTiO₃ (PMNT) (with x=0.7) thin film is prepared on quartz substrates prepared using a sol–gel process. The PMNT thin film has a well-crystallized pyrochlore phase structure. The sign and magnitude of both real and imaginary parts of third-order nonlinear susceptibility χ⁽³⁾ of the thin film have been determined by the Z-scan technique performed at 800 nm with a femtosecond laser. The nonlinear refraction index coefficient γ, the nonlinear absorption coefficient β of the thin film are 1.37×10⁻¹² cm²/W and −6.73×10⁻⁸ m/W, respectively. The real and imaginary part of the third-order nonlinear susceptibility of the film are 1.06×10⁻¹⁷ and −1.65×10⁻¹⁹ m²/V², respectively. The results suggested that the nonlinearity is dominated by the refractive for the film.     

Picosecond nonlinear optical response of Ba0.5Sr0.5TiO3 thin films fabricated by pulsed laser deposition

Well-crystallized Ba_0.5Sr_0.5TiO₃ thin films with good surface morphology were prepared on MgO(1 0 0) substrates by pulsed laser deposition technique at a deposition temperature of 800 °C under the oxygen pressure of 2 × 10⁻³ Pa. X-ray diffraction and atomic force microscopy were used to characterize the films. The full width at half maximum of the (0 0 2) Ba_0.5Sr_0.5TiO₃ rocking curve and the root-mean-square surface roughness within the 5 μm × 5 μm area were 0.542° and 0.555 nm, respectively. The nonlinear optical properties of the films were determined by a single beam Z-scan method at a wavelength of 532 nm with laser duration of 55 ps. The results show that Ba_0.5Sr_0.5TiO₃ thin films exhibit a fast third-order nonlinear optical response with the nonlinear refractive index and nonlinear absorption coefficient being n₂ = 5.04 × 10⁻⁶ cm²/kW and β = 3.59 × 10⁻⁶ (m/W), respectively.     

Photo-operated two-photon absorption effects in the GeSe2–Ga2S3–PbI2 glasses

The possibility to operate the two-photon absorption (TPA) of newly synthesized GeSe₂–Ga₂S₃–PbI₂ glasses using the CO laser beam (λ=5.5 μm) as a photoinducing one has been demonstrated. As the fundamental laser beam we have used the illumination of 10.6 μm passively modulated 0.5 ns CO₂ laser with a rate repetition of about 10 Hz. We have established that the maximal photoinduced TPA is observed for the 8% doped samples (up to 14 cm/GW), which is achieved at a pump CO laser pump power density equal to about 0.6 GW/cm². The undoped PbI₂ samples show the TPA maximum at a pump power density of about 0.2 cm/GW. The minimal TPA values were observed for the samples with 5% of PbI₂. The obtained results show that these materials can be used as effective optically operated optical limiters.     

Optical constants of Tl4Ga3InSe8 layered single crystals

The optical properties of Tl₄Ga₃InSe₈ layered single crystals have been studied by means of transmission and reflection measurements in the wavelength range of 500–1100 nm. The analysis of the room temperature absorption data revealed the presence of both optical indirect and direct transitions with band gap energies of 1.94 and 2.20 eV, respectively. Transmission measurements carried out in the temperature range of 10–300 K revealed that the rate of change of the indirect band gap with temperature is γ=−4.1×10⁻⁴ eV/K. The absolute zero value of the band gap energy was obtained as E_gi(0)=2.03 eV. The dispersion of the refractive index is discussed in terms of the Wemple–DiDomenico single-effective-oscillator model. The refractive index dispersion parameters: oscillator energy, dispersion energy, oscillator strength and zero-frequency refractive index were found to be 4.10 eV, 23.17 eV, 6.21×10¹³ m⁻² and 2.58, respectively. From X-ray powder diffraction study, the parameters of monoclinic unit cell were determined.     

Defect versus nanocrystal luminescence emitted from room temperature and hot-implanted SiO2 layers

Silicon nanocrystals have been synthesized in SiO₂ matrix using Si ion implantation. Si ions were implanted into 300-nm-thick SiO₂ films grown on crystalline Si at energies of 30–55 keV, and with doses of 5×10¹⁵, 3×10¹⁶, and 1×10¹⁷ cm⁻². Implanted samples were subsequently annealed in an N₂ ambient at 500–1100°C during various periods. Photoluminescence spectra for the sample implanted with 1×10¹⁷ cm⁻² at 55 keV show that red luminescence (750 nm) related to Si-nanocrystals clearly increases with annealing temperature and time in intensity, and that weak orange luminescence (600 nm) is observed after annealing at low temperatures of 500°C and 800°C. The luminescence around 600 nm becomes very intense when a thin SiO₂ sample is implanted at a substrate temperature of 400°C with an energy of 30 keV and a low dose of 5×10¹⁵ cm⁻². It vanishes after annealing at 800°C for 30 min. We conclude that this luminescence observed around 600 nm is caused by some radiative defects formed in Si-implanted SiO₂.     

Refractive index profiles of ion implanted waveguides in thulium sodium yttrium tungstate

Planar waveguides were first formed in thulium sodium yttrium tungstate (Tm:NaY(WO₄)₂) crystals by the implantation of MeV He, P and Ni ions with certain doses at room temperature, respectively. The refractive index profiles of the three ion implanted waveguides were found different to some extent. The present data show that He⁺ ion implanted waveguides in Tm:NaY(WO₄)₂ should be the typical barrier type one, while a combination of radiation damage and radiation enhanced diffusion may be responsible for the refractive index profiles of the MeV Ni⁺ and P⁺ ion implanted waveguides in Tm:NaY(WO₄)₂.     

Population lensing effect in Cr:LiSAF probed by Z-scan technique

An experiment has been performed for measuring a nonlinear refractive index that is due to the polarizability difference Δ_P between excited (⁴T₂) and ground (⁴A₂) states in a Cr³⁺:LiSAF crystal at λ = 647 nm. The latter one is responsible for a population lensing effect which has been monitored by using the eclipsing Z-scan technique. We have performed a data analysis that allows to distinguish between thermal and population contributions to the lensing effect. We have found Δ_P = 4.6 × 10⁻²⁵ cm³ which is in a good agreement with our previous measurements with a different technique.     

空位缺陷和相变对冲击压缩下蓝宝石光学性质的影响

为了探究冲击压缩下蓝宝石光学性质的变化行为,本文采用第一性原理方法,在180 GPa的压力范围内计算了蓝宝石理想晶体和含空位点缺陷晶体的光学性质.吸收光谱数据表明,仅考虑压力和温度因素不能解释冲击消光实验的结果,而冲击诱导的氧离子空位点缺陷应该是导致该结果的一个重要原因.波长在532 nm处的折射率数据表明:1)蓝宝石的两个高压结构相变将导致其折射率明显上升;在Corundum和Rh_2O_3相区,其折射率将随冲击压力增大而降低;在CalrO_3相区,压力小于172 GPa时,其折射率随冲击压力增大而缓慢地降低,但172 GPa以上时折射率却随冲击压力增大而逐渐增大;2)空位点缺陷对折射率随冲击压力的变化规律有明显的影响.本文结果不仅有助于增强用空位点缺陷的物理机理来解释蓝宝石冲击透明性损伤现象的可靠性,而且对未来进一步的实验研究以及发展新型窗口材料有重要的参考作用.     

Analysis of ion implanted waveguides formed on Nd:YVO4 crystals

This work reports, for the first time to our knowledge, the formation of planar waveguides in Nd:YVO₄ by either carbon or proton implantation. The waveguides are characterised using the dark mode method and by spectroscopic studies, indicating that there is a reduction of the refractive index at the end of the ion track. Particularly, carbon implantation generates a considerable variation in the guiding region. It is shown that the waveguiding structure preserves the spectroscopic properties of the Nd³⁺ ions, thus maintaining the crystal quality.     

Accurate measurement of the refractive index of CO2, N2, He, O2, and air at 10.57 μ and T = 23 °C

The refractive index of carbon-dioxide, nitrogen, helium, oxygen and air have been measured at 23 °C temperature by means of a tunable CO₂ laser at 10.57 μm and of a differential interferometric technique. As the gas refractive index depends on the pressure P as n = 1 + _PP, the pressure coefficients _P has been measured with 5e–3 accuracy.     

Structural and optical properties of waveguides in YbVO4 crystals formed by 3.0 MeV Cu-ions implantation

We report on the structural and optical characterization of waveguides formed in YbVO₄ crystals by Cu²⁺-ion implantation with an energy of 3.0 MeV and doses of 3.0×10¹⁴-1.0×10¹⁵ ions/cm². The damage properties are determined by RBS/Channeling measurements with the help of simulation code RUMP. The m-line method is used to characterize the dark-mode spectroscopy in the planar waveguides. According to the reconstructed refractive index profile of the waveguide cross section, a numerical simulation is carried out to investigate the confinement of the light in the waveguides based on the beam propagation method.     

Structural and optical properties of thermally evaporated Bi2Te3 films

Bi₂Te₃ films were prepared by thermal evaporation technique. X-ray diffraction analysis for as-deposited and annealed films in vacuum at 150 °C were polycrystalline with rhombohedral structure. The crystallite size is found to increase as the film thickness increases and has values in the range 67–162 nm. The optical constants (the refractive index, n, and absorption index, k) were determined using transmittance and reflectance data in the spectral range 2.5–10 μm for Bi₂Te₃ films with different thicknesses (25–99.5 nm). Both n and k are independent on the film thickness in the investigated range. It was also found that Bi₂Te₃ is a high refractive index material (n has values of 4.7–8.8 in the wavelength range 2.5–10 μm). The allowed optical transitions were found to be direct optical transitions with energy gap  eV. The optical conductivities σ₁ = ƒ(hν) and σ₂ = f(hν) show distinct peaks at about 0.13 and 0.3 eV, respectively. These two peaks can be attributed to optical interband transitions.     

Third-order nonlinear optical response of Cu/Ag nanoclusters by ion implantation under 1064 nm laser excitation

The evolution of nanoclusters in sequentially ion-implanted Cu/Ag into silica glasses has been studied. The doses for implantation (×10¹⁶ ions/cm²) were 5Cu/5Ag, 5Cu/10Ag and 5Cu/15Ag, respectively. The microstructural properties of the nanoclusters are characterized by optical absorption spectra and transmission electron microscopy (TEM). Fast nonlinear optical refraction and nonlinear optical absorption coefficients were measured at 1064 nm of wavelength using Z-scan technique. Results in this project indicate that different optical nonlinearities could be selectively obtained at the near-infrared region of 1064 nm of wavelength by changing the metal ingredient percentage in silica.     

Optical nonlinearities and photo-excited carrier lifetime in CdS at 532 nm

Bound-electronic and free-carrier optical nonlinearities, and relaxation of photo-excited free carriers in CdS have been investigated by the use of a single-beam Z-scan technique at 532 nm. Under pulsed radiation of 35-ps duration with the input irradiances up to 4.8 GW/cm², the two-photon absorption coefficient, the bound-electron nonlinear refractive index, the free-carrier absorption cross-section, and the change in the refractive index per unit carrier density are determined to be 5.4±0.8 cm/GW, −(5.3±0.8)×10⁻¹³ cm²/W, (3.0±0.5)×10⁻¹⁷ cm² and −(0.8±0.1)×10⁻²¹ cm³, respectively. By using these values in the open-aperture Z-scans conducted with 7-ns laser pulses, the carrier recombination time is extracted to be 3.6±0.7 ns. The measured parameters are compared to theoretical calculations.     

Characterization of optical waveguide in Nd: LuVO4 crystals by triple-energy oxygen ion implantation

We report on the optical planar waveguide formation and modal characterization in Nd:LuVO₄ crystals by triple-energy O³⁺-ion implantation at energies of 2.4, 3.0, and 3.6 MeV and doses of 1.4, 1.4, and 3.1×10¹⁴ ions/cm², respectively. The prism-coupling method is used to investigate the dark-mode property at a wavelength of 633 nm. The refractive index profiles of the waveguide are reconstructed by the reflectivity calculation method (RCM). The modal analysis shows that the fields of TE modes are well restricted in the guiding region, which indicates the formation of non-leaky waveguide in the crystal.     

Enhanced luminescence from transparent Ni-doped MgO–Al2O3–SiO2 glass ceramics by Ga2O3 addition

Transparent Ni²⁺-doped MgO–Al₂O₃–SiO₂ glass ceramics without and with Ga₂O₃ were synthetized. The precipitation of spinel nanocrystals, which was identified as solid solutions in the glass ceramics, could be favored by Ga₂O₃ addition and their sizes were about 7.6 nm in diameter. The luminescent intensity of the Ni²⁺-doped glass ceramics was largely enhanced by Ga₂O₃ addition which could mainly be caused by increasing of Ni²⁺ in the octahedral sites and the reduction of the mean frequency of phonon density of states in the spinel nanocrystals of solid solutions. The full width at half maximum (FWHM) of emissions for the glass ceramics with different Ga₂O₃ content was all more than 200 nm. The emission lifetime increased with the Ga₂O₃ content and the longest lifetime is about 250 μs. The Ni²⁺-doped transparent glass ceramics with Ga₂O₃ addition have potential application as broadband optical amplifier and laser materials.     

Structural and optical properties of pulsed laser deposited SrBi2Nb2O9 thin films

SrBi₂Nb₂O₉ (SBN) thin films were prepared on fused quartz substrates at room temperature by pulsed laser deposition. The influence of deposition parameters such as target-to-substrate distance, oxygen pressure and annealing temperature on film crystallization behavior was investigated by X-ray diffraction. Results indicated that the films grown at the optimum processing conditions have polycrystalline structure with a single layered perovskite phase. The optical transmittance of the films prepared at various oxygen pressures was measured in the wavelength range 200–900 nm using UV–vis spectrophotometer. The results showed that there is a red shift in the optical absorption edge with a rise in the oxygen pressure. Refractive index as a function of wavelength and optical band gap of the films were determined from the optical transmittance spectra. The results indicated that the refractive index increases with increasing oxygen pressure at the same incident light wavelength, while the band gap reduces from 4.13 to 3.88 eV. It may be attributed to an increase in packing density and grain size, and decrease in oxygen defects.     

紫外波段SiO2/Si3N4介质膜分布式布拉格反射镜的制备与研究

采用光学传递矩阵方法设计了紫外波段SiO₂/Si₃N₄介质膜分布式布拉格反射镜, 并利用等离子体增强化学气相沉积技术在蓝宝石(0001)衬底上制备了SiO₂/Si₃N₄介质膜分布式布拉格反射镜. 光反射测试表明, 样品反射谱的峰值波长仅与理论模拟谱线相差10 nm, 并随着反射镜周期数的增加而蓝移. 由于SiO₂与Si₃N₄具有相对较大的折射率比, 因而制备的周期数为13的样品反射谱的峰值反射率就已大于99%. 样品反射谱的中心波长为333 nm, 谱峰的半高宽为58 nm. 样品截面的扫描电子显微镜和表面的原子力显微镜测量结果表明, 样品反射谱的中心波长蓝移是由子层的层厚和界面粗糙度的变化引起的. X射线反射谱表明,子层界面过渡层对于反射率的影响较小, 并且SiO₂膜的质量比Si₃N₄差, 也是造成反射率低于理论值的原因之一.     

Comparison of gold and silver dispersion laws suitable for FDTD simulations

We report optical planar waveguide formation and modal characterization in β-BaB₂O₄ crystals by Cu²⁺-ion implantation at an energy of 3.0 MeV and doses of ∼ 10¹⁴ ions/cm². The prism-coupling method was used to investigate the dark-mode property at wavelengths of 633 nm and 1539 nm. The refractive-index profile of the waveguide was reconstructed by an effective refractive index method. The modal analysis indicates that the fields of TM modes can be well restricted in the guiding region, which means the formation of a non-leaky waveguide in the crystal. The results show that the β-BaB₂O₄ waveguides may be used in the application of high efficiency frequency conversion. PACS 61.80.Jh; 42.70.Mp; 42.65.Wi