定量探究平行板电容器的电容

平行板电容器的电容是高中物理电学部分的重要演示实验.教材中的探究方案只能定性研究,且理解难度大,实验效果不明显.为解决以上问题设计了简单稳定且能定量探究平行板电容器电容决定因素的实验装置.实验装置采用单面覆铜板作为电容器极板,利用A4纸或塑料文件夹做电介质,通过实验探究得出平行板电容器电容与极板正对面积成正比,与极板间...     

相干平行板电容器对外场的动态响应

基于介观体系动态响应的自洽理论,讨论了介观相干平行板电容器的电容.结果表明相干电容器的电容对外场频率有很强的依赖关系,并且是随频率变化的复变函数.该电容随频率的变化关系呈现出一个非常有意义的特性,即电容虚部曲线有一个较尖锐的峰,它正好与电容实部的极小位置相对应,而进一步研究发现它们与该电容体系中的类等离子体激发相联系.另外,也讨论了介观电容的尺寸效应,发现当极板间距很大时,电容值和宏观的几何电容结果趋于一致.     

计及边缘效应的平行板电容器的电容计算

本文采用保角变换的方法求解计及边缘效应的平行板电容器的电容，并通过数值计算作出了Ｃ０／Ｃ与ｈ／ｄ的关系曲线，从中可以清楚地看到计及边缘效应对平行板电容器电容的影响．     

非平行板电容器电容的又一算法

应用平行板电容器电容的概念和并联电容器电容公式,给出了非平行板电容器的电容及电场分布.     

计及边缘效应的平行板电容器的电容计算

本文采用保角变换的方法求解计及边缘效尖的平行板电容器的电容，并通过数值计算作出了C0／C与h/d的关系曲线，从中可以清楚地看到计及边缘效应对平行板电容器电容的影响。     

用倍增法定量研究平行板电容器的电容量

提出来一种使用光盘成倍改变平行板电容器极板间面积和距离等参数的方法,用数字电容表测量电容,得出电容与面积与距离间的定量关系.     

非平行板电容器电容计算的修正

在计算非平行板电容器的电场和电容时,以往文献大多忽略分布在电容器外部的电荷.本文将电容器外部电荷纳入计算过程,用三种方法得到更加准确的非平行板电容器电容,较其他文献新增了修正项.     

基于平行板电容器的材料表面形貌测量仪

利用平行板电容器的原理设计了材料表面形貌测量仪,将探针与电容器下极板固连,当探针在不平整的样品表面扫描时,两极板间距发生改变而引起电容变化.通过LabVIEW编程控制平移台蛇形移动,用平行板电容器厚度测试电路测量pF量级的电容改变值.两极板初始距离为50～200μm的工作范围内,测量误差稳定在2μm.通过实时捕捉探针的坐标和极板间距的变化量,该测量仪可以绘制出三维曲面图.     

“用静电计测量平行板电容器电容与哪些因素有关”的实验分析

静电计是高中物理静电实验中常用的且非常重要的仪器,它在教材"电容器电容"一节中出现,用静电计测量已经充电的平行板电容器两极板间的电势差U,研究影响平行板电容器电容大小的因素.但是在课堂教学中,上述实验的演示效果时好时坏,主要表现在静电计指针的偏转角θ变化时大时小.为什么演示效果不稳定?怎样才能达到让人满意的实验效果呢?我们试作讨论.     

非平行板电容器电容的又一种算法

应用平行板电容器电容的概念和并联电容器电容公式,给出了非平行板电容器的电容．     

非平行板电容器电容和电场的两种计算方法之讨论

介绍求解非平行板电容器电容和电场的两种计算方法,一种是从平行板电容器的概念入手的求解方法,另一种是利用电场能量和电容器的能量公式,解出非平行板电容器的电容和电场分布.通过对上述两种方法的讨论,指出第二种方法,严格、简捷易懂,图像清晰,且颇具新意.     

超导量子器件片上皮法电容的制备及测量

片上集成电容是超导量子芯片上的核心器件，其数值一般在百飞法(fF)至皮法(pF)范围.采用常规微纳加工技术在蓝宝石基片上制备了铌-氧化硅-铝(Nb/SiO₂/Al)平行板电容.利用刻蚀工艺制备了平行板电容器的下极板Nb,利用剥离工艺制备平行板电容器的上极板Al和介电层SiO₂.室温下利用锁相放大原理和桥式电路原理测定电容大小，两种方法测定电容值基本一致，表明锁相放大原理测试pF级电容的可靠性.利用该电容与铝基约瑟夫森结组成谐振器，制备了中心频率位于4.35 GHz的约瑟夫森参量放大器.在稀释制冷机中10 mK温度下测定直流偏置谐振器的磁通-频率相位图，拟合数据获得的电容值与室温测定电容值接近，表明在mK、GHz条件下工作的片上集成电容可在室温、kHz条件下测定其数值大小.     

Highly amorphous PbO2 as an electrode in hybrid electrochemical capacitors

This paper presents a synthesis and characterizes highly amorphous lead dioxide and its use in hybrid electrochemical capacitor C/PbO₂. Highly amorphous lead dioxide with a small amount of β-PbO₂ was synthesized by galvanostatic deposition from acetate solution. The hybrid supercapacitor was constructed with PbO₂ as the positive electrode whereas activated carbon as the negative electrode. The morphology of materials was examined by scanning electron microscopy and their structure was characterized by means of an X-ray diffraction technique. The electrochemical performance of hybrid electrochemical capacitor with synthesized PbO₂ was studied by cyclic voltammetry, galvanostatic charge/discharge and electrochemical impedance spectroscopy. To indicate that the amorphous form of lead dioxide was predominant, results were compared to highly crystalline β-PbO₂. The hybrid electrochemical capacitor with synthesized material exhibits a much greater specific capacitance, higher specific energy and power than the highly crystalline one. The specific capacitance values obtained for the supercapacitor rose more than twice in favour of amorphous PbO₂. Also, long cycling did not influence any of the electrochemical properties of this hybrid electrochemical capacitor, which makes it an interesting energy storage device.     

Modeling and calculation of the capacitance of a planar capacitor containing a ferroelectric thin film

The capacitance of a two-layer planar capacitor containing a thin layer of SrTiO₃ is calculated by conformal mapping using the partial capacitanc e method. Simple formulas are obtained for approximation calculation of the capacitances of individual components of a planar structure, and their limits of applicability are determined. A relation for the capacitance of a planar capacitor is derived which takes account of the size effect in a ferroelectric film within the context of the partial capacitance method. The calculated result is compared with the experimentally measured capacitance. Zh. Tekh. Fiz. 69, 1–7 (April 1999)     

Forced vibrations of a rectangular plate with non-uniform thickness

The dependence on frequency of the maximum deflection and surface stresses of a simply supported rectangular plate subjected to a uniformly distributed sinusoidal excitation is discussed and simple formulae are proposed for estimating the deflection and surface stresses. The thickness of the plate varies linearly in one direction parallel to a side of the plate.     

Design and fabrication of a carbon-nanotube-based capacitor patterned on an Archimedean spiral

To achieve the maximum area utilization ratio for a parallel electrode capacitor, an Archimedean spiral was used to design the capacitor pattern. Multi-walled vertically aligned carbon nanotubes (VACNTs) were used for the capacitor electrodes because of their metallic properties and their endurance toward various chemical reagents. In contrast to the parallel plate capacitor, the total capacitance was formed by parallel connections of all unit cells of the individual VACNT capacitors, so that a relatively higher capacitance was obtained. This design can provide a new approach to fill diverse dielectrics into a spiral capacitor to obtain different capacitances for various applications.     

Electromechanical coupling factor of capacitive micromachined ultrasonic transducers

Recently, a linear, analytical distributed model for capacitive micromachined ultrasonic transducers (CMUTs) was presented, and an electromechanical equivalent circuit based on the theory reported was used to describe the behavior of the transducer [IEEE Trans. Ultrason. Ferroelectr. Freq. Control 49, 159-168 (2002)]. The distributed model is applied here to calculate the dynamic coupling factor k(w) of a lossless CMUT, based on a definition that involves the energies stored in a dynamic vibration cycle, and the results are compared with those obtained with a lumped model. A strong discrepancy is found between the two models as the bias voltage increases. The lumped model predicts an increasing dynamic k factor up to unity, whereas the distributed model predicts a more realistic saturation of this parameter to values substantially lower. It is demonstrated that the maximum value of k(w), corresponding to an operating point close to the diaphragm collapse, is 0.4 for a CMUT single cell with a circular membrane diaphragm and no parasitic capacitance (0.36 for a cell with a circular plate diaphragm). This means that the dynamic coupling factor of a CMUT is comparable to that of a piezoceramic plate oscillating in the thickness mode. Parasitic capacitance decreases the value of k(w), because it does not contribute to the energy conversion. The effective coupling factor k(eff) is also investigated, showing that this parameter coincides with k(w) within the lumped model approximation, but a quite different result is obtained if a computation is made with the more accurate distributed model. As a consequence, k(eff), which can be measured from the transducer electrical impedance, does not give a reliable value of the actual dynamic coupling factor.     

聚苯胺在电化学电容器中的应用

采用化学氧化聚和法制备了聚苯胺电极材料,所制备的聚苯胺具有高于420F/g的法拉第赝电容和良好的电化学特性.分别采用聚苯胺作为正极材料,高比容量活性碳作为负极,38%硫酸作为电解液制备了复合型电化学电容器.复合型电容器工作电压达到1.4V,最大电容器比容量达到57F/g,最大比能量达到15.5Wh/kg.电容器200mA/cm2放电条件下真实功率达到2.8W/g,峰值比功率达到20.4W/g.循环工作寿命超过1000次.     

Memory characteristics of platinum nanoparticle-embedded MOS capacitors

The capacitance characteristics of platinum nanoparticle (NP)-embedded metal–oxide–semiconductor (MOS) capacitors with gate Al₂O₃ layers are studied in this work. The capacitance versus voltage (C–V) curves obtained for a representative MOS capacitor exhibit flat-band voltage shifts, demonstrating the presence of charge storages in the platinum NPs. The counterclockwise hysteresis and flat-band voltage shift, observed from the C–V curves imply that electrons are stored in a floating gate layer consisting of the platinum NPs present between the tunneling and control oxide layers in the MOS capacitor and that these stored electrons originate from the Si substrate. Moreover, the charge remains versus time curve for the platinum NP-embedded MOS capacitor is investigated in this work.