含铌钽钢中硼的比色测定

用次甲基蓝比色测定某些含铌钽钢中微量硼时,常常遇到如下困难:铌钽的严重干扰;王水分解试样时氯化硼的挥发损失;某些硼化物如碳化硼、氮化硼以及铌钽的金属间硼化物等不易被王水和硫酸所分解等。为了解决这些问题,本文研究了用焦硫酸钾熔融试样,以水解方式分离铌钽,方法简单,效果较好,避免了卤化硼的挥发损失,并解决了难溶硼化物的溶样问题。本法适用于含铌钽的镍基、铁基和部分钴基合金中微量硼的测定。     

电感耦合等离子体质谱法测定碳化硼中的硼同位素丰度

以碳酸钙为熔剂高温分解,硝酸浸取、硫酸沉淀的方法处理碳化硼样品,稀释后直接进行多接收电感耦合等离子体质谱分析,对碳化硼中的硼同位素丰度进行测定。扫描电镜分析结果表明,碳化硼颗粒形状不规则,尺寸小于50μm。利用建立的方法处理样品,可实现碳化硼样品的完全溶解,回收率接近100%。对样品中10B丰度进行分析,相对标准偏差为0.023%~0.035%(n=6),测量结果与参考值在不确定度范围内保持一致,证明实验方法可行。所建立的碳化硼样品测量方法样品处理步骤简便,分析速度快,测量精度高,可作为碳化硼中硼同位素丰度的常规分析方法。     

微波消解电感耦合等离子体光谱法测定碳化硼中痕量杂质元素

1引言碳化硼(B4C)陶瓷由于具有极高的硬度、优异的耐磨性能、优良的高温稳定性和化学稳定性以及轻质等优良特性而受到人们的极大关注,已在某些领域内得到了广泛应用。研究表明碳化硼中微量乃至痕量杂质元素都会影响其性能。电感耦合等离子体原子发射光谱法(ICP-AES)分析通常要求将样品处理成溶液雾化进样分析。在常压常温下,即使使用氢氟酸、碳化硼也难于分解。熔融样品则会引入大量的熔剂,需要稀释制样,影响样品痕量元素检测,且要使样品完全分解和分析也比较困难。本实验使用微波高压消解系统消解碳化硼样品,并用ICP-AES测定了碳化硼…     

盐酸-过氧化氢封管分解法在贵金属及其合金与金属锆分析中的应用

在化学分析中的某些情况下,一个溶样方法的选择,决定了测定的成败(如铱合金分析)。为了分析试样、试剂合成或制备标准溶液而常采用的热压分解法(其中包括玻璃封管法及压力溶样器法)是贵金属分析中分解试样的重要方法之一。已有文献介绍,方法是将试样与溶剂一起密封后,在加热的条件下,溶剂蒸气压增大,从而大大提高了试样分解的效率,加快了分解速度又节省了溶剂。是分解贵金属、稀有金属、合金、矿物及有机物等试样的有效方法。     

岩矿试样分解方法的某些进展

岩矿试样要求分解方法既能使被测元素完全溶解,又尽可能兼顾干扰元素分离和避免分解时的各种沾污。因而研究岩矿试样分解方法对各种分析手段都有实际意义。叶传贤等编写了《岩矿分解方法》一书。该书收集了1976年前的国内外文献,介绍了各种熔(溶)剂对一些典型试样的分解方法。鲁道夫(谢长生等译)的分析化学分解方法手册中阐明了无机、有机和生物试样的分解方法,总结文献4000篇。蒋淑芬     

金属试样的分解

金属的化学分析,一般都在溶液状态下进行,因此,必须使金属试样完全分解,使其成为溶液状态,把被测成分转变为可供化学分析的离子或分子。试样的分解,既要保证试样中被测组分全部转入溶液,又要尽可能避免带入干扰物质。选择合理的分解方法,可以使分析手续大大地简化,分析方法的适应性、准确度显著地提高。所以,正确地选择金属试样的分解方法是获得准确分析结果的重要环节。一、分解方法及溶剂的选择试样分解的总要求应该是简易、快速。但因试样分解是一个复杂问题,必须根据以下情况,选择适当的分解方法和适宜的溶剂。     

微量金测定中的某些问题

编辑同志: 在微量金的测定中,有两个问题值得商榷。1.试样的分解目前我国普遍使用王水溶矿。在快速分析中,也有人主张用盐酸+过氧化氢、盐酸+氯酸钾、盐酸+高锰酸钾等方法。但是,有人认为用王水分解试样,金的结果有偏低现象。我们以硅酸盐试样为对象,进行了几种溶矿方法的比较试验。结果见表1。     

氢碘酸-氢氟酸溶解天青石及其在分析上的应用

天青石、硅酸盐及其它矿物试样中锶的测定多采用碱熔分解,这不但手续繁长,且引入大量盐类,不利于用原子吸收或ICP法测定。我们在绵拔邦彦工作的基础上,试验了用氢碘酸-氢氟酸分解试样,并拟定了分解条件。以人工合成试样进行实验,结果回收率达99.5—101.2%,表明分解试样完全,效果好。并且与碱熔法的测定结果作了对照,测定值基本吻合。利     

贵金属分析中热压分解法的应用

一般来说,贵金属试样的分解比其它常见金属困难。在应用的几种分解方法中,酸溶法一般只能分解银、金、钯、铂及其矿物;所有贵金属试样虽然都可用碱、硫酸氢盐或过氧化物等熔融分解,但将引入大量盐类及坩埚腐蚀带来的杂质;干法氯化能分解贵金属及矿物,但氯化装置复杂,不适于大批试样分     

锂—硅粉末合金中高含量硅的测定

锂-硅粉末合金中锂、硅的重量配比要求较严,所以准确测定硅含量非常重要。过去,采用水解法分解试样,以重量法测定硅,这种方法反应异常剧烈,操作危险,且分析步骤繁琐。我们经试验拟定了水蒸气氧化分解试样,以差示分光光度法测定高含量硅。方法简便,溶样十分安全,适用于锂-硅粉末合金中含量高达50%硅的测定。实际试样分析获良好结果。     

碳化硼纳米线的制备和结构

以碳纳米管为模板，通过加热碳纳米管与硼粉的混合物，获得了笔直的硼碳纳米线.对纳米线的结构和成分进行研究，结果表明纳米线主要为B4C纳米线.在部分B4C纳米线的端部存在Ni颗粒，这些端部具有Ni颗粒的纳米线构成了纳米磁针.讨论了B4C纳米线的生长机制，B4C纳米线的生长主要为硼原子在碳纳米管中扩散并发生化学反应，使得碳纳米管晶格结构发生重组，形成B4C纳米线.反应后，硼原子部分取代了碳纳米管中碳原子，修补了碳纳米管中的晶格缺陷，获得了形态笔直的B4C纳米线.     

Influence of carbon content on physicomechanical characteristics of boron carbide

Temperature and amplitude dependences of dynamic shear modulus (SM) and of internal friction (IF) have been measured on boron carbide samples with different carbon content. The samples were investigated at frequencies of torsion oscillations from 0.5 to 5 Hz and at amplitudes of oscillatory deformation from 5×10⁻⁶ to 1×10⁻² at temperatures from 80 to 1000 K. It was shown that absolute values of SM, of critical amplitudes of oscillatory deformation and of shear elastic limit decreased with the decrease of carbon content in the samples. Simultaneously, activation energy of the intensive relaxation-type IF in the vicinity of 450-470 K was also decreased. Cyclic deformation at 1000 K provided additional decrease to physicomechanical characteristics while at annealing in vacuum at the temperatures of 1273 and 1773 K these structure-sensitive properties significantly increased. The observed changes of physicomechanical characteristics were attributed to possible changes of inter-atomic forces in the structure of boron carbide samples.     

The morphology of ceramic phases in BxC-SiC-Si infiltrated composites

The present communication is concerned with the effect of the carbon source on the morphology of reaction bonded boron carbide (B₄C). Molten silicon reacts strongly and rapidly with free carbon to form large, faceted, regular polygon-shaped SiC particles, usually embedded in residual silicon pools. In the absence of free carbon, the formation of SiC relies on carbon that originates from within the boron carbide particles. Examination of the reaction bonded boron carbide revealed a core-rim microstructure consisting of boron carbide particles surrounded by secondary boron carbide containing some dissolved silicon. This microstructure is generated as the outcome of a dissolution-precipitation process. In the course of the infiltration process molten Si dissolves some boron carbide until its saturation with B and C. Subsequently, precipitation of secondary boron carbide enriched with boron and silicon takes place. In parallel, elongated, strongly twinned, faceted SiC particles are generated by rapid growth along preferred crystallographic directions. This sequence of events is supported by X-ray diffraction and microcompositional analysis and well accounted for by the thermodynamic analysis of the ternary B-C-Si system.     

The effect of the sintering atmosphere on the densification of B4C ceramics

Densification of boron carbide during sintering may be improved by a two-stage process, namely heating to 2000°C under vacuum and sintering at 2190°C under argon. This sintering regime allows achieving a relative density of the ceramic bodies fabricated from a fine powder higher than 95%. The nitrogen treatment of the boron carbide phase at 1900°C leads to the formation of the BN phase and precipitation of graphite. Vacuum treatment of these samples at 2000°C leads to decomposition of the boron nitride phase. The liberated free boron may again react with graphite to form in situ boron carbide particles. The experimental investigations of the sintering behavior of the boron carbide phase under various atmospheres supported the thermodynamic predictions regarding the phase transformation. No evidence, however, was found for enhanced sintering under a nitrogen atmosphere.     

Some physical properties of compacted specimens of highly dispersed boron carbide and boron suboxide

Structure, shear modulus and internal friction (IF) of compacted specimens of boron carbide and boron suboxide have been investigated. Microtwins and stacking faults were observed along the {100} plane systems of polycrystalline specimens of boron carbide. Electrical conductivity of the specimens was that of p-type. Concentration of holes varied from 10¹⁷ to 10¹⁹ cm⁻³. The IF was measured in the temperature range 80-300 K. It was shown that the IF of boron carbide and that of boron suboxide were characterized with a set of similar relaxation processes. Mechanisms of the relaxation processes in boron carbide and boron suboxide are discussed in terms of the Hasiguti model of interaction between dislocations and point defects.     

Boron carbide-copper infiltrated cermets

Porous boron carbide preforms, prepared with and without excess carbon, were infiltrated with a Cu-Si alloy. Contrary to unalloyed copper, the Cu-Si alloy wets and infiltrates the porous preforms. A thermodynamic analysis of the B-C-Cu-Si system indicated that a Si content of the alloy above 15 at% leads to the formation of SiC. At higher Si content, the composition of boron carbide in contact with the melt also changes towards higher boron content. Metallographic examination validated these conclusions. The SiC compound forms preferentially around the free carbon particles in preforms containing excess carbon, and also in the vicinity of carbide that did not contain any excess carbon. Eventually, SiC, a product of the reaction between the carbide and the melt, forms a continuous barrier that impedes completion of the reaction and accounts for the limited increase of hardness as a result of lengthy heat treatments.     

Borides and vitreous compounds sintered as high-energy fuels

Boron was chosen as fuel in view of its excellent thermodynamic values for combustion, as compared to traditional fuels. The problem of the boron in combustion is the formation of a surface layer of oxide, which delays the ignition process, reducing the performance of the rocket engine. This paper presents a high-energy fuel for rocket engines. It is composed of sintered boron (borides and carbides and vitreous compounds) with a reducing chemical agent. Borides and boron carbide were prepared since the combustion heat of the latter is similar to that of the amorphous boron (in: K.K. Kuo (Ed.), Boron-Based Solid Propellant and Solid Fuel, Vol. 427, CRC Press, Boca Raton, FL, 1993). Several chemical reducing elements were used, such as aluminum, magnesium, and coke. As the raw material for boron, different compounds were used: amorphous boron, boric acid and boron oxide.     

Some properties of single-crystal boron carbide

Large and high-quality floating zone grown single crystals of boron carbide of the composition B_∼4.3C corresponding to the carbon-rich limit B_4.3C of the homogeneity range, were presented by Leithe-Jasper and Tanaka at the ISBB’99 in Dinard for the first time. Such crystals now allow determining the physical properties of this refractory semiconductor free from the influence of impurities or coarse structural imperfections. Some solid-state properties of these single crystals like electronic transport properties, IR optical absorption spectrum, IR reflectivity spectrum, FT-Raman spectrum, and Knoop hardness are presented and discussed with respect to the properties of less perfect boron carbide previously determined. Outstanding properties are the hardness exceeding that of technical boron carbide by 14% (∥c) and 24% (⊥c) respectively, and the high optical absorption at energies below the absorption edge and the reflectivity strongly increasing towards low frequencies suggesting a destinctly higher contribution of free carriers.     

Synthesis of boron suboxide (B6O) with ball milled boron oxide (B2O3) under lower pressure and temperature

Boron reacted with ball milled boron oxide under pressures between 1 and 5 GPa and at temperatures between 1300 and 1700 °C to afford boron suboxide (B₆O). Icosahedral B₆O grains with diameters ranging from 100 nm to 1.3 μm were prepared. The factors that affect the synthesis of B₆O are investigated. The best sample with crystal size up to 1.3 μm is obtained at 2 GPa and 1400 °C for 6 h. The indentation experiment gave an average Vickers hardness of 32.3 GPa for bulk B₆O sample, which is consistent with previous reports. Bulk B₆O sample exhibits oxidation resistance in air up to 1000 °C and mild oxidation in the temperatures of 1000-1200 °C, which is more oxidation resistant than diamond. It is possible that B₆O could be used as a substitute for diamond in industry because of its relatively mild synthesis conditions, high thermal stability and high hardness.     

Compacts of Boron-Doped Synthetic Diamond: Lowering of Synthesis Temperature and Its Effect on the Doping Level and Electrochemical Behavior

Substituting of metal (Co, Ni) borides for boron carbide in the boron carbide–graphite growth system for the process of diamond growth in the region of diamond thermodynamic stability allowed lowering the synthesis temperature for the electrodes of this new electrode material―boron-doped diamond compacts―significantly (by ~1000°C) without any deterioration of their electrochemical properties. On the other hand, using of amorphous boron with finer grain as compared with the boron carbide, mixed with graphite, results in a marked increase of the electrodes’ electrochemical efficiency, due to increase in their roughness after the chemical removing of boron-containing inclusions from their surfaces. Thus obtained compact electrodes have wide potential window and low background current in supporting electrolytes, they are well reproducible. Special features of their electrochemical impedance spectroscopy are similar to those of the recently studied compacts synthesized on the basis of boron carbide.