X-ray diffraction and photoelectron spectroscopy studies of MoO2 as catalyst for the partial oxidation of isooctane

X-ray diffraction (XRD), X-ray photoemission (XPS) as well as ultraviolet photoemission (UPS) spectroscopy experiments on MoO₂ powders were carried out to examine the bulk, the core level energies, and the electronic structure of MoO₂ samples that were employed as catalysts for the partial oxidation of isooctane. Five fresh 0.5-g MoO₂ samples were exposed for 0, 0.5, 9, 20, and 43 h to identical reforming environments and their spent samples were analyzed using the techniques mentioned above. Our results indicate the rapid appearance of an intermediate Mo phase with a binding energy of 228.5 eV and whose concentration progressively increases with time. The oxidation state for this new phase was graphically estimated to approximately +2.6 and assigned to the compound Mo₂O₃, which forms on the catalyst surface as a result of its exposure to the reforming environment. The electronic structure probed by UPS reveals two bands, one at 1.62 eV and another at 0.55 eV below the Fermi level, that decrease with the increasing time on stream. These results correlate very well with the drop in the catalytic performance of MoO₂ for the partial oxidation of isooctane and with the decline in the concentration of dioxide (Mo⁴⁺) detected not only on the catalyst surface, but also in the bulk structure, as confirmed by our XRD analysis.     

Sol-gel growth of Gd2MoO6:Eu nanocrystalline layers on SiO2 spheres (SiO2@Gd2MoO6:Eu) and their luminescent properties

SiO₂@Gd₂MoO₆:Eu³⁺ core-shell phosphors were prepared by the sol-gel process. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectra (EDS), transmission electron microscopy (TEM), photoluminescence (PL) spectra as well as kinetic decays were used to characterize the resulting SiO₂@Gd₂MoO₆:Eu³⁺ core-shell phosphors. The XRD results demonstrate that the Gd₂MoO₆:Eu³⁺ layers on the SiO₂ spheres begin to crystallize after annealing at 600 °C and the crystallinity increases with raising the annealing temperature. The obtained core-shell phosphors have a near perfect spherical shape with narrow size distribution (average size ca. 600 nm), are not agglomerated, and have a smooth surface. The thickness of the Gd₂MoO₆:Eu³⁺ shells on the SiO₂ cores could be easily tailored by varying the number of deposition cycles (50 nm for four deposition cycles). The Eu³⁺ shows a strong PL luminescence (dominated by ⁵D₀-⁷F₂ red emission at 613 nm) under the excitation of 307 nm UV light. The PL intensity of Eu³⁺ increases with increasing the annealing temperature and the number of coating cycles.     

Gas sensing properties of nanostructured MoO3 thin films prepared by spray pyrolysis

Thin films of molybdenum trioxide (MoO₃) were deposited on common glass using the chemical spray pyrolysis technique. A (NH₄)₆Mo₇O₂₄4H₂0 solution 0.1 M was used as the precursor one. The influence of substrate temperature on the crystallographic structure, surface morphology and electrical behavior of MoO₃ thin films was studied. MoO₃ can exist in two crystalline forms, the thermodynamically stable orthorhombic α-MoO₃ and the metastable monoclinic β-MoO₃ phase. XRD-spectra showed a growth of α-MoO₃ phase percentage as substrate temperature increases from 420 K up to 670 K. Films deposited in the 500–600 K range have a clearly porous surface structure of nanometer order as can be seen in SEM images. Changes up to six magnitude orders were observed in MoO₃ thin films electrical resistance when films temperature varied from 100 K up to 500 K. The sensing property of these MoO₃ films was also studied. The sensitivity was investigated in the temperature range 160 and 360 K for H₂O and CO gases, respectively. Both of them are of reducing nature. In all studied cases sensitivity decreases slowly as film temperature is raised. At room temperature the sensitivity changes from 12 up to 75% depending on substrate temperature. The sensitivity for CO gas was found to be lower than that of H₂O.     

Crystallization of 21.25Gd2O3-63.75MoO3-15B2O3 glass induced by femtosecond laser at the repetition rate of 250 kHz

We report the formation of β′-Gd₂(MoO₄)₃ (GMO) crystal on the surface of the 21.25Gd₂O₃-63.75MoO₃-15B₂O₃ glass, induced by 250 kHz, 800 nm femtosecond laser irradiation. The morphology of the modified region in the glass was clearly examined by scanning electron microscopy (SEM). By micro-Raman spectra, the laser-induced crystals were confirmed to be GMO phases and it is found that these crystals have a strong dependence on the number and power of the femtosecond laser pulses. When the irradiation laser power was 900 mW, not only the Raman peaks of GMO crystals but also some new peaks at 214 cm⁻¹, 240 cm⁻¹, 466 cm⁻¹, 664 cm⁻¹ and 994 cm⁻¹which belong to the MoO₃ crystals were observed. The possible mechanisms are proposed to explain these phenomena.     

Towards anode with low indium content as effective anode in organic solar cells

In₂O₃ thin films (100 nm thick) have been deposited by reactive evaporation of indium, in an oxygen partial atmosphere. Conductive (σ = 3.5 × 10³ S/cm) and transparent films are obtained using the following experimental conditions: oxygen partial pressure = 1 × 10⁻¹ Pa, substrate temperature = 300 °C and deposition rate = 0.02 nm/s. Layers of this In₂O₃ thick of 5 nm have been introduced in AZO/In₂O₃ and FTO/In₂O₃ multilayer anode structures. The performances of organic photovoltaic cells, based on the couple CuPc/C₆₀, are studied using the anode as parameter. In addition to these bilayers, other structures have been used as anode: AZO, FTO, AZO/In₂O₃/MoO₃, FTO/In₂O₃/MoO₃ and FTO/MoO₃. It is shown that the use of the In₂O₃ film in the bilayer structures improves significantly the cell performances. However the open circuit voltage is quite small while better efficiencies are achieved when MoO₃ is present. These results are discussed in the light of surface roughness and surface work function of the different anodes.     

Ionic liquid-assisted hydrothermal synthesis of dendrite-like NaY(MoO4)2:Tb phosphor

Micro-sized NaY(MoO₄)₂:Tb³⁺ phosphors with dendritic morphology was synthesized by a ionic liquid-assisted hydrothermal process. X-ray diffraction (XRD) indicated that the as-prepared product is pure tetragonal phase of NaY(MoO₄)₂. Field emission scanning electron microscopy (FE-SEM) images showed that the as-prepared NaY(MoO₄)₂:Tb³⁺ phosphors have dendritic morphology. The photoluminescent (PL) spectra displayed that the as-prepared NaY(MoO₄)₂:Tb³⁺ phosphors show a stronger green emission with main emission wavelength 545 nm corresponding to the ⁵D₄→⁷F₅ transition of Tb³⁺ ion, and the optimal Tb³⁺ doping concentration for obtaining maximum emission intensity was confirmed to be 10 mol%. Based on Van Uitert's and Dexter's models the electric dipole–dipole (D–D) interaction was confirmed to be responsible for the concentration quenching of ⁵D₄ fluorescence of Tb³⁺ in the NaY(MoO₄)₂:Tb³⁺ phosphors. The intrinsic radiative transition lifetime of ⁵D₄ level is found to be 0.703 ms.     

A photoelectron spectroscopic study of the carburization of MoO3

MoO₃ and Mo samples containing copper were treated with different hydrocarbon/hydrogen gas mixtures. The formation of Mo₂C was followed by X-ray photoelectron spectroscopy (XPS). Spectra taken in the Mo 3d, C 1s, O 1s, Cu 2p and Cu KLL regions demonstrated that the treatment with the hydrocarbon/hydrogen gas mixtures led to the formation of Mo₂C. From the comparison of the effects of various hydrocarbons on the XP spectra of Mo 3d we can state that the reduction of MoO₃ starts at the lowest temperature for C₂H₆/H₂ (600 K) followed by CH₄/H₂ (700 K) and C₄H₁₀/H₂ (723 K). Binding energies of Mo 3d_5/2 characteristic for Mo₂C are measured in the range of 227.7-228.0 eV. These values were attained at 900 K for CH₄/H₂, at 800 K for C₂H₆/H₂ and at 873 K for C₄H₁₀/H₂. Addition of copper to MoO₃ catalyzed its reduction and promoted the carburization process.     

Sm-activated gadolinium molybdate: an intense red-emitting phosphor for solid-state lighting based on InGaN LEDs

Sm³⁺-activated gadolinium molybdate, Gd₂(MoO₄)₃:Sm³⁺ red-emitting phosphor was prepared by conventional solid-state method. The structure, morphology, and luminescent properties of these powder samples have been investigated by means of X-ray diffraction (XRD), scanning electron microscopy (SEM), and fluorescent spectrophotometry, respectively. The as-obtained phosphor has a monoclinic structure with single crystalline phase. Its mean particle size is about 6-8 μm with pseudo-pompon shape and large surface area, which is suitable for manufacture of white LEDs. The phosphor can be efficiently excited by incident light of 348-445 nm, well matched with the output wavelength of a near-UV InGaN-based chip, and re-emits an intense red light peaking at 650 nm. By combing this phosphor with a 405 nm-emitting InGaN chip, a red LED was fabricated, so that the applicability of this novel phosphor to white LEDs was confirmed. It is considered to be an efficient red-emitting conversion phosphor for solid-state lighting based on InGaN LEDs.     

Surface chemistry and catalytic activity of Ni/Al2O3 irradiated with high-energy electron beam

The radiation effects induced effects by electron beam (EB) treatment on the catalytic activity of Ni/γ-Al₂O₃ were studied for the carbon dioxide reforming of methane with different EB energy and absorbed radiation dose. Transmission electron microscope (TEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) were used to determine the change in structure and surface states of Ni/γ-Al₂O₃ catalyst before and after the EB treatment. Higher energy EB treatment is useful for increasing the proportion of the active sites (such as Ni⁰ and NiAl₂O₄-phase) on the surface. The increase of Ni/Al-ratio indicates that the Ni dispersion on the surface increased with the EB-treatment, resulting in an increase of the active sites, which leads to improving the catalytic activity. XPS measurement also showed a decrease of the surface carbon with EB dose. The maximum 20% increase in the conversion of CO₂/CH₄-mixture into CO/H₂ gas was observed for the catalyst treated with 2 MeV energy and 600 kGy dose of EB relative to untreated.     

Effect of temperature of annealing on optical, structural and electrochromic properties of sol-gel dip coated molybdenum oxide films

The sol-gel dip-coating method is used for the preparation of MoO₃ thin films. The 6 layered MoO₃ films were prepared and annealed at various temperatures in the range of 200-350 °C. The band gap value for MoO₃ films were calculated from optical absorption measurements and it is in the range of 3.55-3.73 eV. XRD spectrum reveals (0 2 0) is the major diffraction plane for the films prepared above 250 °C, which reveals the formation of MoO₃ in α-orthorhombic phase. The films prepared at 200 °C and 250 °C exhibits amorphous nature. The FTIR spectrum confirms the presence of Mo-O-Mo and MoO bonds. Nanorods were observed in the SEM images in the case of MoO₃ films prepared above 250 °C. The films prepared at 250 °C exhibit maximum anodic diffusion coefficient of 9.61 × 10⁻¹¹ cm²/s. The same film exhibits the change in optical transmission of 58.4% at 630 nm with the optical density of 0.80.     

Behavior of the thermal expansion coefficient of α-MoO3 as a function of the concentration of the Nd ion

We carried out a comparative study of the thermal dilatation coefficient of molybdenum trioxide with and without Nd³⁺ doping. The doped samples were obtained from a solid state reaction of MoO₃ and Nd₂O₃ in concentrations from 0.2 to 20.0 at%. The prepared samples were analyzed as a function of the temperature through X-Ray diffraction (XRD), the chemical composition of the resultant material was studied using Energy Dispersive X-ray Spectroscopy (EDS). The results of the XRD show that the MoO₃ doped with Nd in concentrations of 0.2 and 1.0% atomic grows iso-structurally with α-MoO₃. Moreover, MoO₃ doped with Nd³⁺ in concentrations of 5.0, 10.0 and 20.0% atomic exhibits the monoclinic phase Mo₉O₂₆. Finally, we determined that the values of the thermal expansion coefficient of MoO₃, doped and un-doped, differ by less than 3%.     

Nanofibers and nanoplatelets of MoO3 via an electrospinning technique

Polyvinyl alcohol (PVA)/ammonium molybdate composite fibers were prepared by using sol-gel processing and electrospinning technique. After calcinations of the above precursor fibers at 500 °C, MoO₃ nanofibers with a diameter of 100-150 nm were successfully obtained. MoO₃ nanoplatelets and submicron platelets were prepared by further calcinations of the MoO₃ nanofibers at 600 and 700 °C. The products were characterized by X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR) and scanning electron microscopy (SEM). A possible growth mechanism for the MoO₃ nanofibers and nanoplatelets was suggested.     

Structural, optical and electrochromic properties of Nb-doped MoO3 thin films

Niobium (Nb) doped molybdenum trioxide (MoO₃) thin films have been synthesized using spray pyrolysis deposition technique. The structural changes were observed with the help of X-ray diffraction technique. With increasing Nb concentration, the structure of MoO₃ undergoes a phase transformation from α-orthorhombic to amorphous with nano-sized grains. The thread like reticulated morphology is converted into spongy like structure at higher Nb concentration (9 at% Nb). It is seen that Nb doping can lead to significant surface morphology changes in MoO₃ films. It was found that the coloration efficiency increases with doping concentration. With increasing Nb concentration charge capacity, reversibility and electrochemical stability increases. The improvement is attributed to the amorphous structure of the doped samples that favors easy intercalation and deintercalation processes. Hence, we have successfully demonstrated formation of an adequate host for electrochromic devices with Nb (9 at%) doped MoO₃ samples.     

MoO3/Al2O3催化剂中Mo分散的正电子研究

用浸渍法制备了一系列不同Mo含量的MoO₃/Al₂O₃催化剂.测量了这些样品的正电子湮没寿命谱(PALS)与符合多普勒展宽(CDB)谱,以研究其孔洞结构以及Mo分散.正电子寿命测量结果表明,Al₂O₃载体中存在两种不同尺寸的孔洞.掺入MoO₃之后,Mo原子主要进入Al₂O₃的大孔中,使孔洞体积减小.符合多普勒展宽谱结果表明,当MoO 关键词： 3/Al₂O₃催化剂')" href="#">MoO₃/Al₂O₃催化剂 正电子湮没寿命谱 符合多普勒展宽 Mo 分散     

Microstructure and mechanical properties of alumina coatings prepared by double glow plasma technique

Low-temperature growth (600 °C) of α-Al₂O₃ coatings on the stainless steel substrate by double glow plasma technique was achieved. The compositions and microstructures of the coatings prepared at different oxygen flow rates were characterized, respectively, by X-ray diffraction (XRD), scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) spectrometry. A phenomenological mechanism for the formation of the Al₂O₃ ceramic coatings during the oxidation process was proposed on the basis of the experimental results. It was obvious that the oxygen flow rates had a great effect on the surface structure of the prepared Al₂O₃ coatings. The dense and smooth Al₂O₃ coatings were prepared at the oxygen flow rate of 15 sccm. In addition, the correlations between the mechanical properties of Al₂O₃ coating and oxygen flow rates were also discussed. The coating prepared at 15 sccm oxygen flow rate exhibited the best mechanical properties with a maximum hardness of 31 GPa and elastic modulus of 321 GPa. The corresponding critical load of scratch adherence for this sample was 47 N.     

Influence of postdeposition annealing on structural properties and electrical characteristics of thin Tm2O3 and Tm2Ti2O7 dielectrics

We describe the structural properties and electrical characteristics of thin thulium oxide (Tm₂O₃) and thulium titanium oxide (Tm₂Ti₂O₇) as gate dielectrics deposited on silicon substrates through reactive sputtering. The structural and morphological features of these films were explored by X-ray diffraction, X-ray photoelectron spectroscopy, secondary ion mass spectrometry, and atomic force microscopy, measurements. It is found that the Tm₂Ti₂O₇ film annealed at 800 °C exhibited a thinner capacitance equivalent thickness of 19.8 Å, a lower interface trap density of 8.37 × 10¹¹ eV⁻¹ cm⁻², and a smaller hysteresis voltage of ∼4 mV than the other conditions. We attribute this behavior to the Ti incorporated into the Tm₂O₃ film improving the interfacial layer and the surface roughness. This film also shows negligible degrees of charge trapping at high electric field stress.     

Characterization of Y2O3 gate dielectric on n-GaAs substrates

Physical and electrical properties of sputtered deposited Y₂O₃ films on NH₄OH treated n-GaAs substrate are investigated. The as-deposited films and interfacial layer formation have been analyzed by using X-ray photoelectron spectroscopy (XPS) and secondary ion mass spectroscopy (SIMS). It is found that directly deposited Y₂O₃ on n-GaAs exhibits excellent electrical properties with low frequency dispersion (<5%), hysteresis voltage (0.24 V), and interface trap density (3 × 10¹² eV⁻¹ cm⁻²). The results show that the deposition of Y₂O₃ on n-GaAs can be an effective way to improve the interface quality by the suppression on native oxides formation, especially arsenic oxide which causes Fermi level pinning at high-k/GaAs interface. The Al/Y₂O₃/n-GaAs stack with an equivalent oxide thickness (EOT) of 2.1 nm shows a leakage current density of 3.6 × 10⁻⁶ A cm⁻² at a V_FB of 1 V. While the low-field leakage current conduction mechanism has been found to be dominated by the Schottky emission, Poole-Frenkel emission takes over at high electric fields. The energy band alignment of Y₂O₃ films on n-GaAs substrate is extracted from detailed XPS measurements. The valence and conduction band offsets at Y₂O₃/n-GaAs interfaces are found to be 2.14 and 2.21 eV, respectively.     

Study of molybdenum coordination state and crystallization behavior in MoO3-La2O3-B2O3 glasses by Raman spectroscopy

The ternary MoO₃-La₂O₃-B₂O₃ glasses containing a large amount of MoO₃ (10-50 mol%) are prepared, and their structure and crystallization behavior are examined from the Raman scattering spectrum measurements and X-ray diffraction analyses. It is found that the glass transition and crystallization temperatures and the thermal stability against crystallization decrease with increasing MoO₃ content. It is suggested that the main coordination state of Mo⁶⁺ ions in the glasses is isolated (MoO₄)²⁻ tetrahedral units giving strong Raman bands at 830-860 and 930 cm⁻¹. It is found that the crystalline phases in the crystallized glasses are mainly LaMoBO₆ and LaB₃O₆, and the main crystallization mechanism in MoO₃-La₂O₃-B₂O₃ glasses is surface crystallization. LaMoBO₆ crystals are found to give strong Raman bands at 810-830 and ∼910 cm⁻¹.     

Spectroscopic study on thermal reaction and desorption of sulfur/Rh(1 0 0) induced by oxygen-containing molecules

The surface reaction and desorption of sulfur on Rh(1 0 0) induced by O₂ and H₂O are investigated with X-ray photoelectron spectroscopy (XPS) technique. The Rh(1 0 0) sample covered with atomic sulfur is prepared by means of the exposure to H₂S gas, and subsequently the sample is annealed under O₂ or H₂O atmosphere. The XPS results show that atomic sulfur adsorbed on Rh(1 0 0) reacts with O₂ and desorbs from the surface at 473 K or more. On the other hand, atomic sulfur can not be removed from Rh(1 0 0) surface by H₂O at any temperature.     

The effect of heat treatment on the performance of the Ni/(Zr-Sm oxide) catalysts for carbon dioxide methanation

The active catalysts for methane formation from the gas mixture of CO₂ + 4H₂ with almost 100% methane selectivity were prepared by reduction of the oxide mixture of NiO and ZrO₂ prepared by calcination of aqueous ZrO₂ sol with Sm(NO₃)₃ and Ni(NO₃)₂. The 50 at%Ni-50 at%(Zr-Sm oxide) catalyst consisting of 50 at%Ni-50 at%(Zr + Sm) with Zr/Sm = 5 calcined at 650 or 800 °C showed the highest activity for methanation. The active catalysts were Ni supported on tetragonal ZrO₂, and the activity for methanation increased by an increase in inclusion of Sm³⁺ ions substituting Zr⁴⁺ ions in the tetragonal ZrO₂ lattice as a result of an increase in calcination temperature. However, the increase in calcination temperature decreased BET surface area, metal dispersion and hydrogen uptake due to grain growth. Thus, the optimum calcination temperature existed.