AC and DC magnetic studies of critical currents in ceramics of the Ho1−xPrxBa2Cu3O7−δ system

AC magnetic susceptibility measurements were performed for ceramics of the Ho_1−xPr_xBa₂Cu₃O_7−δ system as a function of temperature, frequency, field amplitude and static magnetic field. From the measurements, temperature dependences of intergranular critical currents and corresponding pinning energies at grain boundaries were determined for different Pr concentrations. These critical currents strongly decrease with Pr doping. They are limited by superconductor–insulator–superconductor or superconductor–normal metal–superconductor junctions and for higher Pr concentrations additionally suppressed by flux creep. Also intragranular critical current at 4.3 K was determined as a function of Pr concentration from magnetic hysteresis loops. It is a monotonically decreasing function of Pr doping.     

Statistics of avalanches in the self-organized criticality state of a Josephson junction

Magnetic flux avalanches in Josephson junctions that include superconductor-insulator-superconductor (SIS) tunnel junctions and are magnetized at temperatures lower than approximately 5 K have been studied in detail. Avalanches are of stochastic character and appear when the magnetic field penetration depth λ into a junction becomes equal to the length a of the Josephson junction with a decrease in the temperature. The statistical properties of such avalanches are presented. The size distribution of the avalanches is a power law with a negative noninteger exponent about unity, indicating the self-organized criticality state. The self-organized criticality state is not observed in Josephson junctions with a superconductor-normal metal-superconductor (SNS) junction.     

The effect of sintering temperature on the intergranular properties of Bi2223 superconductors

A systematic study of the intergranular properties of (Bi,Pb)₂Sr₂Ca₂Cu₃O_y (Bi2223) polycrystalline samples has been done using the electrical resistivity and Ac susceptibility techniques. In this project, we have prepared a series of Bi2223 samples with different sintering temperature. The XRD results show that by increasing sintering temperature up to 865 °C the Bi2212 phase fraction decrease. It was found that the Bi2212 phase on the grain boundaries is likely to play the role of weak links and consequently reduces the intergranular critical current densities. Analysis of the temperature dependence of the Ac susceptibility near the transition temperature (T_c) has been done employing Bean's Critical State Model. The observed variation of intergranular critical current densities (J_c) with temperature indicates that the weak links are changed from superconductor–normal metal–superconductor (SNS) for well-coupled sample to superconductor–insulator–superconductor (SIS) type of junctions for the sample with high Bi2212 phase fraction.     

Higher-order elastic constants of La1.84Sr0.16CuO4 high-temperature superconductor

Finite deformation theory is used to obtain the strain energy density of a tetragonal 2–1–4-type single crystal of the high-temperature superconductor La_2−xSr_xCuO₄. The complete set of second and third-order elastic constants of the high-temperature superconductor La_2−xSr_xCuO₄ (x = 0.16) is calculated by taking into account the interactions between nine nearest-neighbour atoms in the lattice and using Mie–Grüneisen interatomic potential. For the sake of comparison we have also computed the values of these constants for x = 0.13–0.20. The values of third-order elastic constants of La_2−xSr_xCuO₄ (x = 0.13–0.20) are negative and their absolute magnitudes are one order higher than those of the second-order elastic constants.     

Influence of Nd substitution on the superconducting properties of ceramics in the 2212 system Bi2−wPbwSr2−xCa1−yNdx+yCu2O8+z

In the system Bi_2−wPb_wSr_2−xCa_1−yNd_x+yCu₂O_8+z different fractions of Nd are substituted on either Sr of Ca sites in order to introduce intrinsic insulating pinning centres. It is shown that a Nd concentration around x or y = 0.2 is likewise favourable with an average Nd---Nd distance in the range of the coherence length in the a, b-plane. However, clear evidence of flux pinning is only present for charge compensation with Pb²⁺. A simultaneous substitution of the Bi-based 2212 superconductor with moderate amounts of Nd³⁺ and Pb²⁺ improves the superconducting properties by strengthening the flux pinning forces.     

Radiothermoluminescence of poly(tetra fluoroethylene) and poly(ethylene terephthalate) pretreated by xenon ions

Low-temperature (77–300 K) RadioThermoLuminescence (RTL) investigations of Poly(Tetra FluoroEthylene) (PTFE) and Poly(Ethylene TerePhthalate) (PET) foils previously treated by different flux (Φ = 10⁶–10¹¹ cm⁻²) of Xenon ions with energy 1.1 MeV/nucleon have been showed an essential ion-induced changes in RTL of the both polymers under study. In PET as well as in PTFE significant changes of RTL light yield observed at the ion flux more than 10⁹ cm⁻². Variation of RTL light yield in PTFE accompanied by appearance of new TL temperature maxima on the glow curve. An existence of correlation between observed changes of molecular mobility in ion-irradiated polymer and optical (PET) and strength (PTFE) properties have been found.     

Study of the magnetic properties of single-crystal Ba0.6K0.4BiO3

The magnetic properties of single-crystal Ba_0.6K_0.4BiO₃ were studied. The results show that this isotropic superconductor (cubic structure with T_c ≈ 32 K) exhibits irreversibility and relaxation properties similar to those observed in the layered, high temperature superconductors. For fields above 0.1 T, an irreversibility line B_irr = B_irr (0) (1 − t)ⁿ with n = 3/2 and B_irr (0) = 20 T is observed. The comparison among several superconducting systems with different anisotropies suggests that the irreversibility line is unlikely to be the melting line for the YBa₂Cu₃O_7−δ.     

A comparison of the zero bias differential resistance of Ag:Nb and Ag:Nd1.85Ce0.15CuO4−δ point contacts as a function of temperature below Tc

Point contact spectra for contacts between Ag and two different superconductors, Nb and Nd_1.85Ce_0.15CuO_4−δ, were measured as a function of temperature using a crossed wire-wedge technique (R.C. Reinertson et al., Physica B 165&166 (1990) 1615). The temperature dependence of the zero bias resistance quantitatively agrees with predictions of the theory by Blonder, Tinkham and Klapwijk (Phys. Rev. B 25 (1982) 4515) for normal:superconductor point contacts for all interface scattering barrier strengths observed in this study (Z = 0.3 to Z = 1.0). The zero bias temperature dependence of Ag:Nd_1.85Ce_0.15CuO_4−δ contacts indicates a systematically higher range of barrier strengths and contact resistances than typical Ag:Nb contacts.     

Use of capillaries in the construction of an MRI phantom for the assessment of diffusion tensor imaging: demonstration of performance

Although diffusion tensor imaging (DTI) shows great potential for the diagnosis of a variety of pathologies, no consensus for an appropriate assessment standard of DTI exists. This study examined the feasibility of using water-filled arrays of glass capillaries to construct a DTI phantom suitable for making repeated and reproducible measurements required in a quality assessment program. Three phantoms were constructed using arrays of capillaries with three inner diameters (23, 48, and 82 μm). Data were acquired using DTI protocols; the fractional anisotropy (FA), mean apparent diffusion coefficient (ADC) and principal eigenvectors of the diffusion tensors were calculated. This study demonstrated four results: (1) echo-planar images show that susceptibility within the capillary arrays does not lead to substantial differences in precessional frequency in regions containing the arrays and neither do the regions show noticeable image distortion; (2) principal eigenvectors of the diffusion tensors agree to within <10.3° of the array orientations; (3) mean FA values (0.18–0.50) and ADC values (1.40–1.93×10−³ mm²/s) within specified regions of interest are in general agreement with simulations after a simple noise correction; and (4) these array performance characteristics are observable using a typical clinical DTI protocol.     

A 110 GHz SIS receiver for radio astronomy

A 110 GHz superconductor insulator superconductor (SIS) tunnel junction receiver has been developed and used in regular astronomical observations on the 4m radio telescope at the Department of Astrophysics, Nagoya University. The SIS junction consists of a sandwich structure of Nb/AlOx/Nb, and is cooled to 4.2K with a closed cycle He-gas refrigerator. The receiver exhibits a best double side band noise temperature of 23±2 K at 110GHz. Additional measurements at 98–115 GHz indicate that the receiver has a good response over this input frequency range.     

The flux jumps in high TcBi1.7Pb0.3Sr2Ca2Cu3Oy bulk superconductor

There was giant flux jumps in high Tc Bi_1.7Pb_0.3Sr₂Ca₂Cu₃O_y bulk superconductor. The relaxation time, τ, decreased with both the increase of magnetic field and the rise of temperature. The maximum τ was about 40 min.. The average-dM/dt increased with both the increase of magnetic field and the rise of temperature. The minimum average-dM/dt was about 4.1×10⁻²G/min.. The flux jump weakened with time. It was dependent on the decrease of gradient of magnetic flux density dn/dx in the sample.     

Etch pits and tunnel barrier in chemically etched YBa2Cu3O7−δ crystals by scanning tunneling microscopy

By imaging in air the (001) surfaces of YBa₂Cu₃O_7−δ single crystals etched in dilute CH₃OH : Br₂ solution with scanning tunneling microscopy we have observed etch pits and followed their modification with time. The current-voltage characteristics of the junction are measured and described in terms of electron tunneling through a trapezoidal potential barrier of average thickness (≈ 25 Å). Such a barrier results from the passivated layer formed on the superconductor surface exposed to room air after the etching. The superconductor surface is metallic. The normalized conductance G(V) measured at room temperature is that of a metal-insulator-metal junction except at small bias. Sharp peaks assigned to local density-of-states features within 1 eV from the Fermi level are observed.     

Luminescence from Si-Si1−xGex/Si1−yCy-Si structures

Near band edge photoluminescence has been obtained from Si_1−yC_y quantum well (QW) and neighboring Si_1−xGe_x/Si_1−yC_y double QW (DQW) structures. Enhanced no-phonon recombination is observed from the DQW structures and it is attributed to a breaking of the k-selection rule in the presence of the heterointerface. The luminescence persists for measurement temperatures up to 30–50 K and the intensity exhibits a quenching behavior with an activation energy equal to 8–20 meV. In electroluminescence only recombination in the Si_1−xGe_x layer has been observed from neighboring Si_1−xGe_x and Si_1−yC_y DQW structures.     

SNS与SINIS结阵制作工艺的比较

国家电压基准是基于约瑟夫森量子化效应的。传统的SIS结阵具有不能快速选择特定的台阶,相位锁定时间短的问题。I-V曲线无回滞的约瑟夫森结阵,其I-V曲线单值,电压台阶宽,解决了SIS结阵的问题。美国标准技术研究院的Hamilton提出并制作高度阻尼的可编程SNS约瑟夫森结阵电压标准;德国物理技术研究院则选择SINIS结来制作可编程约瑟夫森结阵电压基准。从结构、性能和制作方法等方面对SNS和SINIS可编程约瑟夫森结阵进行了比较。     

Effects of cation- or oxide ion-defect on conductivities of apatite-type La–Ge–O system ceramics

A series of apatite-type La–Ge–O ceramics were prepared and their cation-defect at the 4f+6h sites and oxide ion-defect at 2a site were investigated. In La_xGe₆O_12+1.5x ceramics of x=6–12, the higher conductivities were obtained in the region of apatite composition, La_x(GeO₄)₆O_1.5x−12 (x=8–9.33), and the highest conductivity was achieved for La₉(GeO₄)₆O_1.5 (x=9), where the number of cation (La³⁺) occupying the 4f+6h sites is 9 and the number of oxide ion occupying the 2a site is 1.5. The ceramics with cation- and oxide ion-defects were La_9−0.66xSr_x(GeO₄)₆O_1.5 (x=0–1), La_9−1.33xZr_x(GeO₄)₆O_1.5 (x=0–1), La_9−xSr_x(GeO₄)₆O_1.5−0.5x (x=0–3), La_9−xZr_x(GeO₄)₆O_1.5+0.5x (x=0–1), La_x(GeO₄)_3x−21(AsO₄)_27−3xO_1.5 (x=0–3), La_x(GeO₄)_33−3x(AlO₄)_3x−27O_1.5 (x=0–3), La₉(GeO₄)_6−x (AlO₄)_xO_1.5−0.5x (x=0–3), La₉(GeO₄)_6−x(AsO₄)_xO_1.5+0.5x (x=0–1), La_9.33−xSr_x(GeO₄)₆O_2−0.5x (x=0–1.2) and La_x(GeO₄)_4.5(AlO₄)_1.5O_1.5x−12.75 (x=8.8–9.83), which were prepared by the partial substitution of La³⁺and GeO₄⁴⁻of the basic apatite La₉(GeO₄)₆O_1.5 with Sr²⁺ or Zr⁴⁺ and AlO₄⁵⁻ or AsO₄³⁻. Such substitutions lowered the conductivity of La₉(GeO₄)₆O_1.5. These results were discussed by the electrostatic interaction between Sr²⁺, Zr⁴⁺, AlO₄⁵⁻ or AsO₄³⁻ and oxide ion as a conductive species.     

Effect of Cu doping in MgB2 superconductor at various processing temperatures

The effects of Cu doping in MgB₂ superconductor has been studied at different processing temperatures. The polycrystalline samples of Mg_1−xCu_xB₂ with x = 0.05 were synthesized through the in-situ solid sate reaction method in argon atmosphere at different temperature range between 800–900 °C. The samples were characterized through X-ray diffraction (XRD), Scanning Electron Microscopy (SEM) and low temperature R–T measurement techniques for the phase verification, microstructure and superconducting transition temperature, respectively. The XRD patterns of Mg_1−xCu_xB₂ (x = 0.05) do not exhibit any impurity traces of MgB₄ or MgB₆ and they show the sharp transition in the samples prepared at 850 °C. The onset transition temperature of the prepared samples is around 39 K, which is almost the same as that for the pure MgB₂. This indicates that Cu doping in MgB₂ does not affect the transition temperature. The SEM micrograph of Mg_0.95Cu_0.05B₂ has shown that the sample is dense with grain size smaller than 1 μm.     

Perovskite-like system (Sr,La)(Fe,Ga)O3−δ: structure and ionic transport under oxidizing conditions

The maximum solid solubility of gallium in the perovskite-type La_1−xSr_xFe_1−yGa_yO_3−δ (x=0.40–0.80; y=0–0.60) was found to vary in the approximate range y=0.25–0.45, decreasing when x increases. Crystal lattice of the perovskite phases, formed in atmospheric air, was studied by X-ray diffraction (XRD) and neutron diffraction and identified as cubic. Doping with Ga results in increasing unit cell volume, while the thermal expansion and total conductivity of (La,Sr)(Fe,Ga)O_3−δ in air decrease with gallium additions. The average thermal expansion coefficients (TECs) are in the range (11.7–16.0)×10⁻⁶ K⁻¹ at 300–800 K and (19.3–26.7)×10⁻⁶ K⁻¹ at 800–1100 K. At oxygen partial pressures close to atmospheric air, the oxygen permeation fluxes through La_1−xSr_xFe_1−yGa_yO_3−δ (x=0.7–0.8; y=0.2–0.4) membranes are determined by the bulk ambipolar conductivity; the limiting effect of the oxygen surface exchange was found negligible. Decreasing strontium and gallium concentrations leads to a greater role of the exchange processes. As for many other perovskite systems, the oxygen ionic conductivity of La_1−xSr_xFe_1−yGa_yO_3−δ increases with strontium content up to x=0.70 and decreases on further doping, probably due to association of oxygen vacancies. Incorporation of moderate amounts of gallium into the B sublattice results in increasing structural disorder, higher ionic conductivity at temperatures below 1170 K, and lower activation energy for the ionic transport.     

Realization and properties of ramp-type YBa2Cu3O7−δ/Au/Nb junctions

All-thin-film ramp type Josephson junctions between YBa₂Cu₃O_7−δ and Nb have been fabricated. This procedure allows connections between high-T_c and low-T_c superconductors at different crystal sides of the high-T_c superconductor on one chip, which is of great interest for novel phase devices. A thin Au layer is incorporated as a chemical barrier to avoid oxygen transfer from the YBa₂Cu₃O_7−δ to the Nb. Critical current densities up to 600 A/cm² are obtained at T=4.2 K, with typical R_nA values of 0.8 μΩ cm². The variation of the magnetic field dependence of the critical current with the angle between the junction barrier and the YBa₂Cu₃O_7−δ crystal axes is explained by considering a predominant d_x²−y² order parameter symmetry of the YBa₂Cu₃O_7−δ. The successful fabrication of these junctions allows the implementation of novel superconducting electronics, such as complementary Josephson circuitry or proposed qubit concepts, using the unconventional order parameter symmetry of the high-T_c superconductor.     

NIR-FT-SERS of 4″-trimethylsilylethylsulfanyl-4,4′-di(phenyleneethynylene)benzenethiol on Au nanospheres

Oligo(phenyleneethynylene) (OPE) compounds have been identified as promising molecular electronic bridges. Self-assembled monolayers of 4″-trimethylsilylethylsulfanyl-4,4′-phenyleneethynylenebenzene thiol (OPE′) on Au were characterized by surface-enhanced Raman scattering (SERS). The FT-Raman spectrum of OPE′ shows three C–S bands at 834, 1086, and 1131 cm⁻¹. From the FT-Raman to the SERS spectra, the 1086 cm⁻¹ band exhibits a 9 cm⁻¹ red shift. Chemisorption of OPE′ to the gold surface occurs via oxidative cleavage of the disulfide bond and the formation of the Au–S bond. The Au–S vibration is visible in the SERS spectra at 257 cm⁻¹. Peaks due to the S–S and S–H stretch are observed at 544 and 2519 cm⁻¹, respectively, in the FT spectrum, but are unobserved in the surface-enhanced spectra. The C–H stretching region (2700–3350 cm⁻¹) in the spectrum of neat OPE′ shows three distinct bands, whereas the SERS spectra show a single broad band. Assignments of vibrational bands were based on DFT calculations performed at the B3LYP level with good agreement between theoretical and experimental values. An average percent difference of 2.52 was obtained for the non-CH stretching frequencies.     

Measurement of the absolute oscillator strengths of gadolinium using an atomic vapor produced by electron beam heating

The absolute values of the oscillator strength ƒ were measured for the six spectral lines of Gd by means of laser absorption spectroscopy with the atomic vapor produced by electron beam heating. The ƒ values obtained for the transition are 0–17381 cm⁻¹, 215–17750 cm⁻¹, 533–17795 cm⁻¹, 999–18070 cm⁻¹, 999–17931 cm⁻¹, 1719–18070 cm⁻¹ were obtained to be 0.0036, 0.012, 0.014, 0.019, 0.0075 and 0.039, respectively. The error of ƒ values was 24% due to uncertainty of metastable states' density.