双层光学薄膜参数的多入射角椭偏分析方法

本文讨论了多入射角椭偏测量中光学参数的误差因子以及最佳测量条件的选取.指出,当薄膜较厚时,多入射角椭偏测量可以精确确定膜系的光学常数和几何厚度,并用二例实测结果加以证实.本文的方法也适用于分析多层光学薄膜.     

光学薄膜鲁棒设计中膜系误差灵敏度控制

提出了一种基于膜系误差灵敏度控制的鲁棒膜系设计方法,建立了鲁棒膜系设计评价函数在膜层参数误差统计分布下的解析表达式,避免统计样本数目有限性造成的样本均值与总体期望的误差,以及过大数目样本造成的长的计算时间消耗,并通过宽带增透膜、中性分光膜和线性透射率滤光片等多种薄膜的鲁棒设计实验证实了其在膜层参数误差控制上的效果。结果表明:该新型鲁棒膜系设计方法具有内在的快速算法特性,其设计膜系对镀膜中的膜厚监控误差不敏感,对于高质量薄膜的重复制备和批量成品率的提高具有实用价值。     

用离子束溅射淀积的氧化物薄膜的折射率

介绍了用于波长为1550nm光通讯波分复用／解复用滤光片的离子束溅射的Ta2O5和SiO2薄膜在法里－珀罗多层膜中的折射率的实时所 方法及拟合方法及拟合结果，给出了它们的淀积时间，淀积速率和计算的光学厚度，分析了这些结果的可靠性。     

确定薄膜厚度和光学常数的一种新方法

借助于不同的色散公式,运用改进的单纯形法拟合分光光度计测得的透过率光谱曲线,来获得薄膜的光学常数和厚度。用科契公式分别对电子束蒸发的TiO2和反应磁控溅射的Si3N4,以及用德鲁特公式对电子束蒸发制备的ITO薄膜进行了测试,结果表明测得的光学常数和厚度,与已知的光学常数以及台阶仪测得的结果具有很好的一致性。这种方法不仅简便,而且不需要输入任何初始值,具有全局优化的能力,对厚度较薄的薄膜也可行。采用不同的色散公式可以获得各种不同薄膜的光学常数和厚度,这在光学薄膜、微电子和微光机电系统中具有实际的应用价值。     

Transparence and electrical properties of ZnO-based multilayer electrode

Three-layered ZnO/Ag–Ti/ZnO structures were prepared using both the sol-gel technique and DC magnetron sputtering. This study focuses on the electrical and optical properties of the ZnO/Ag–Ti/ZnO multilayers with various thicknesses of the Ag–Ti layer. The ZnO thin film prepared by the sol–gel method was dried at 300°C for 3 minutes, and a fixed thickness of 20 nm was obtained. The thickness of the Ag–Ti thin film was controlled by varying the sputtering time. The Ag–Ti layer substantially reduced the electrical resistivity of the sol–gel-sprayed ZnO thin films. The sheet resistance of the Ag–Ti layer decreased dramatically and then became steady beyond a sputtering time of 60 s. The sputtering time of Ag–Ti thin film deposition was determined to be 60 s, taking into account the optical transmittance. Consequently, the transmittance of the ZnO/Ag–Ti/ZnO multilayer films was 71% at 550 nm and 60% at 350 nm. The sheet resistance was 4.2 Ω/sq.     

规整膜系层厚允许误差的研究

提出了一种通过计算机模拟薄膜的淀积过程来计算规整膜系层厚允许误差的方法,所计算的层厚允许误差不仅取决于膜系的设计结构,还与薄膜的淀积工艺、镀膜设备的监控精度有关.实验结果表明:采用这种方法所计算出的层厚允许误差对于薄膜的实际镀制具有指导意义.     

磁控溅射制备铬薄膜的结构和光电学性质(英文)

用直流磁控溅射技术在石英基片上制备不同厚度(5nm～114nm之间)的铬膜.使用X射线衍射仪和分光光度计分别检测薄膜的结构和光学性质,利用德鲁特模型和薄膜的透射、反射光谱计算铬膜的厚度和光学常量,并采用Van der Pauw方法测量薄膜电学性质.结果表明:制备的铬薄膜为体心立方的多晶态,随着膜厚的增加,薄膜的结晶性能提高,晶粒尺寸增大;在可见光区域,当膜厚小于32nm时,随着膜厚的增加,折射率快速减小,消光系数快速增大,当膜厚大于32nm时,折射率和消光系数均缓慢减小并逐渐趋于稳定;薄膜电阻率随膜厚的增加为一次指数衰减.     

磁控溅射制备铬薄膜的结构和光电学性质

用直流磁控溅射技术在石英基片上制备不同厚度(5 nm~114 nm之间)的铬膜.使用X射线衍射仪和分光光度计分别检测薄膜的结构和光学性质,利用德鲁特模型和薄膜的透射、反射光谱计算铬膜的厚度和光学常量,并采用Van der Pauw方法测量薄膜电学性质.结果表明:制备的铬薄膜为体心立方的多晶态,随着膜厚的增加,薄膜的结晶性能提高,晶粒尺寸增大;在可见光区域,当膜厚小于32 nm时,随着膜厚的增加,折射率快速减小,消光系数快速增大,当膜厚大于32 nm时,折射率和消光系数均缓慢减小并逐渐趋于稳定;薄膜电阻率随膜厚的增加为一次指数衰减.     

相变记录介质GaSb薄膜的光学性质、微观结构及其记录性质

本文系统地研究了热致相变对射频磁控溅射的GaSb薄膜光学性质和微观结构的影响.发现在270℃左右具有连续无序网络结构的非晶GaSb薄膜发生相变,转变为具有立方晶系的多晶薄膜,其晶格常数为α_0=0.6095nm,相变后薄膜的吸收减小,GaSb薄膜的光能隙由0.7eV升高为0.94eV.用精密四探针法测量了GaSb薄膜电阻随温度变化的过程.给出了GaSb薄膜的一次写入记录特性,研究了光致晶化记录畴的微结构.     

Optical parameters of epitaxial GaN thin film on Si substrate from the reflection spectrum

A method has been proposed for determining the optical properties of a thin film layer on absorbing substrates. The film optical parameters such as thickness, refractive index, absorption coefficient, extinction coefficient and the optical energy gap of an absorbing film are retrieved from the interference fringes of the reflection spectrum at normal incidence. The envelopes of the maxima of the spectrum E_M and of the minima E_m are introduced in analytical forms to find the reflectance amplitudes at the interfaces and approximate values of the thin film refractive index. Then, the interference orders and film thickness are calculated to get accurate values of the needed optical parameters. There are no complex fitting procedures or assumed theoretical refractive index dispersion relations. The method is applied to calculate the optical properties of an epitaxial gallium nitride thin film on a silicon (1 1 1) substrate. Good agreement between our results and the published data are obtained.     

Direct Monitoring of Thickness and Refractive Index of Optical Thin Film Deposited on Fiber End-face

We propose a system for depositing thin films on waveguides which enables low-temperature deposition and precise control of the refractive index and film thickness. It is composed of a conventional ion-beam sputtering (IBS) system and a new system for directly monitoring film characteristics during deposition. We controlled refractive indices over a wide range from 1.52 to 1.97 by moving the sputtering targets (SiO₂ and Si₃N₄) in the IBS system. The refractive index or film thickness was in-situ monitored by observing the optical power reflected from the end-face of a monitoring fiber set in the deposition chamber. Antireflection coating films were successfully deposited on a fiber end-face and a laser diode chip facet with low reflectivity from 0.05 to 0.07%. This deposition system is attractive for constructing highly functional optical devices for future photonic networks.     

The effects of post-thermal annealing on the optical parameters of indium-doped ZnO thin films

Indium-doped ZnO thin films are deposited on quartz glass slides by RF magnetron sputtering at ambient temper- ature. The as-deposited films are annealed at different temperatures from 400 C to 800 C in air for 1 h. Transmittance spectra are used to determine the optical parameters and the thicknesses of the films before and after annealing using a nonlinear programming method, and the effects of the annealing temperatures on the optical parameters and the thickness are investigated. The optical band gap is determined from the absorption coefficient. The calculated results show that the film thickness and optical parameters both increase first and then decrease with increasing annealing temperature from 400 C to 800 C. The band gap of the as-deposited ZnO:In thin film is 3.28 eV, and it decreases to 3.17 eV after annealing at 400 C. Then the band gap increases from 3.17 eV to 3.23 eV with increasing annealing temperature from 400 C to 800 C.     

Thin film stress measurement by instrumented optical fibre displacement sensor

Residual stress can adversely affect the mechanical, electronic, optical and magnetic properties of thin films. This work describes a simple stress measurement instrument based on the bending beam method together with a sensitive non-contact fibre optical displacement sensor. The fibre optical displacement sensor is interfaced to a computer and a Labview programme enables film stress to be determined from changes in the radius of curvature of the film-substrate system. The stress measurement instrument was tested for two different kinds of thin film, hard amorphous carbon nitride (CN) and soft copper (Cu) films on silicon substrates deposited by RF magnetron sputtering. Residual stress developed in 500 nm thick CN thin films deposited at substrate temperatures in the range 50-550 °C was examined and it was found that stress in CN films decreased from 0.83 to 0.44 GPa compressive with increase of substrate temperature. Residual stress was found to be tensile (121 MPa) for Cu films of thickness 1500 nm deposited at room temperature.     

射频磁控反应溅射氮氧化硅薄膜的研究

利用SiOxNy薄膜光学常数随化学计量比连续变化的特性,给出了制备折射率连续可调的SiOxNy薄膜的实验条件。用磁控反应溅射法制备了不同氮氧比的SiOxNy薄膜。研究了不同气流比率条件下薄膜光学常数、化学成分及溅射速率等的变化。用UV-VIS光谱仪测试了透射率曲线,利用改进的单纯型法拟合透射率曲线计算得到了折射率和消光系数。测试了红外傅立叶光谱(FTIR)曲线和X光光电子能谱(XPS)分析了薄膜成分的变化。实验表明薄膜特性与N2／O2流量比率密切相关,通过控制总压和改变气体流量比可控制SiOxNy薄膜的折射率n从1．92到1．46连续变化,应用Wemple-DiDomenico模型计算出光子带隙在6．5eV到5eV之间单调变化。     

Ellipsometry of precision optical surfaces and mirror coatings

The possibility of testing a surface damaged layer and the cleaning quality of precision optical surfaces using the monochromatic ellipsometry method is discussed. The results of ellipsometric measurements of the thickness homogeneity of nanofilms deposited by the ion-beam sputtering method are analyzed. The results of calculations of the film thicknesses and parameters of surface layers performed by solving an inverse ellipsometric problem are presented. The results of measurements of the thickness of thin films by the profilometric and ellipsometric methods are compared.     

氧化铟锡薄膜的椭偏光谱研究

用溅射法在Si片上制备了厚度为140nm的氧化铟锡(ITO)薄膜。X射线衍射研究表明所制备的薄膜为多晶结构。在1.5~4.5eV范围内对ITO薄膜进行了椭偏测量。分别用德鲁德-洛伦茨谐振子(Drude Lorenz oscillators)模型、层进模型结合有效介质近似模型对椭偏参量ψ、Δ进行了拟合,得到ITO薄膜的折射指数n的变化范围在1.8~2.6之间,可见光范围内消光系数k接近于零,在350nm波长附近开始明显变化,且随着波长的减小k迅速增加。计算得到直接和间接光学带隙分别是3.8eV和4.2eV。并在1.5~4.5eV段给出一套较为可靠的、具有实用价值的ITO介电常量和光学常量。     

La0.825Sr0.175MnO3薄膜自旋输运特性研究

本文通过固相反应方法制备了具有钙钛矿结构的稀土掺杂锰氧化物La0.875Sr0.125MnO3(LSMO)块材,并用磁控溅射方法在LaAlO3衬底上生长了厚度为50nm的单晶薄膜.X射线衍射仪分别对LSMO块材和薄膜材料进行分析,表明薄膜和衬底具有相同的钙钛矿结构;通过研究该薄膜光诱导效应和磁场下输运行为,发现其输运性质明显改变,表明外场改变体系的电子自旋输运特性,引起双交换作用减弱和增强,分别导致电阻率的增加和减小.     

基于反射和透射光谱的氢化非晶硅薄膜厚度及光学常量计算

采用紫外-可见透射光谱仪测量了对靶磁控溅射沉积法制备的氢化非晶硅（a-Si:H）薄膜的透射光谱和反射光谱.利用T/(1-R)方法来确定薄膜的吸收系数,进而得到薄膜的消光系数|通过拟合薄膜透射光谱干涉极大值和极小值的包络线来确定薄膜折射率和厚度的初始值,并利用干涉极值公式进一步优化薄膜的厚度值和折射率|利用柯西公式对得到的薄膜折射率进行拟合,给出了a-Si:H薄膜的色散关系曲线.为了验证该方法确定的薄膜厚度和光学常量的可靠性,将理论计算得到的透射光谱与实验数据进行了比较,结果显示两条曲线基本重合,可见这是确定a-Si:H薄膜厚度及光学常量的一种有效方法.     

离子束溅射沉积不同厚度铜膜的光学常数研究

利用Lambda-900分光光度计对离子束溅射沉积不同厚度Cu膜测定的反射率和透射率,运用哈德雷方程,并考虑基片后表面的影响,对离子束溅射沉积的Cu膜光学常数进行了计算。结果表明,在同一波长情况下,膜厚小于100 nm的纳米Cu膜光学常数随膜厚变化明显;膜厚大于100 nm后,Cu膜的光学常数趋于一定值。Cu膜不连续时的光学常数与连续膜时的光学常数随波长变化规律不同;不同厚度的连续膜的光学常数随波长变化规律相同,但大小随膜厚变化而变化。     

Si掺杂Ag基超分辨薄膜读出性能研究

超分辨薄膜是一种能够实现突破光学衍射极限的功能薄膜,它在超分辨近场光存储技术中起到至关重要的作用。采用磁控溅射共溅的方式制备了Ag掺杂一定量Si的超分辨复合薄膜,测试了其作为掩膜层的超分辨光盘读出性能,并获得了最佳的薄膜制备条件,即当Ag溅射功率为55 W,Si为95 W,溅射时间为80s,薄膜厚度为39nm时,超分辨光盘的读出信号载噪比(CNR)最高为28dB。用X射线光电子能谱测量了上述薄膜的组成,用扫描电子显微镜观察了薄膜微区形貌,并用椭圆偏振光谱仪测量了薄膜的光学常数和厚度。超分辨复合薄膜的读出机理可以用Ag的散射型机理解释。光盘在持续读出10万次以后读出信号基本没有下降。