Initial Processes of Sulfur Adsorption on Si（100） Surface

The adsorption of one monolayer S atoms on ideal Si（100） surface is studied by using the self-consistent tight binding linear muffon-tin orbital method. Energies of adsorption systems ors atoms on different sites are calculated. It is found that the adsorbed S atoms are more favorable on B1 site （bridge site） with a distance 0.131 nm above the Si surface. The .S, Si mixed layer might exist at S/Si（100） interface. The layer projected density of states are calculated and compared with that of the clean surface. The charge transfers are also investigated.     

Chemisorption of Au on Si（001） surface

The chemisorption of one monolayer of Au atoms on an ideal Si(001) surface is studied by using the self-consistent tight binding linear muffin-tin orbital method. Energies of the adsorption system of a Au atom on different sites are calculated. It is found that the most stable position is A site (top site) for the adsorbed Au atoms above the Si(001) surface. It is possible for the adsorbed Au atoms to sit below the Si(001) surface at the B_1 site(bridge site), resulting in a Au－Si mixed layer. This is in agreement with the experiment results. The layer projected density of states is calculated and compared with that of the clean surface. The charge transfer is also investigated.     

Chemisorption of Fe on Au-passivated Si（001） surface

The chemisorption of one monolayer of Fe atoms on a Au-passivated Si(001) surface is studied by using the self-consistent tight-binding linear muffin-tin orbital method. The Fe adatom chemisorption on an ideal Si(001) surface is also considered for comparison. The chemisorption energy and layer projected density of states for a monolayer of Fe atoms on Au-passivated Si(001) surface are calculated and compared with that of the Fe atoms on an ideal Si(001) surface. The charge transfer is investigated. It is found that the most stable position is at the fourfold hollow site for the adsorbed Fe atoms, which might sit below the Au surface. Therefore there will be a Au－Fe mixed layer at the Fe/Au－Si(100) interface. It is found that the adsorbed Fe atoms cannot sit below the Si surface, indicating that a buffer layer of Au atoms may hinder the intermixing of Fe atoms and Si atoms at the Fe/Au－Si(001) interface effectively, which is in agreement with the experimental results.     

Dissociative Chemisorption of an H2（v,j） Molecule on Rigid Ni （100） Surface： Dependence on Surface Topologies and Initial Rovibrational States of the Molecules

The H2(v,j) Ni(100) collision system has been studied to understand the effects of the surface sites and initial rovibrational states of the molecule on molecule-surface interactions, by a quasiclassical molecular dynamic simulation method. Dissociative adsorption of an H2 molecule on the rigid Ni(100) surface is investigated at topologically different three sites of the surface. Interaction between the molecule and Ni surface was described by a London-Eyring-Polani-Sato (LEPS) potential. Dissociative chemisorption probabilities of the H2(v, j) molecule on various sites of the surface are presented as a function of the translation energies between 0.001-1.0eV. The probabilities obtained at each collision site have unique behaviour. At lower collision energies, indirect processes enhance the reactivity, effects of the rotational excitations and impact sites on the reactivity are more pronounced. The results are compared with the available studies. The physical mechanisms underlying the results and quantum effects are discussed.     

Influence of Interface Charge on Electrical Properties of ZnO／Si Heterojunction

The capacitance-voltage and current-voltage properties of the samples before and after annealing are investigated at 300 K and 195K. It is found that the interface charge plays an important role for the heterojunction properties. After annealing, the samples exhibit typical junction properties. The heterojunction shows a built-in potential 0.62eV consistent with the theoretical result 0.67eV. However, the sample exhibits more complex behaviour before annealing. The experimental results can be explained by heterojunction theory when, introducing interface charge, which suggests that the annealing can reduce interface charge and can improve the junction properties of the samples.     

Adsorption and Reaction of CO on （100） Surface of SrTiO3 by Density Function Theory Calculation

Adsorption and reaction of CO on two possible terminations of SrTiO3 （100） surface are investigated by the first-principles calculation of plane wave ultrasoft pseudopotentiai based on the density function theory. The adsorption energy, Mulliken population analysis, density of states （DOS） and electronic density difference of CO on SrTiO3 （100） surface, which have never been investigated before as far as we know are performed. The calculated results reveal that the Ti-CO orientation is the most stable configuration and the adsorption energy （0.449eV） is quite small. CO molecules adsorb weakly on the SrTiO3 （100） surface, there is predominantly electrostatic attraction between CO and the surface rather than a chemical bonding mechanism.     

Density Functional Calculation of the 0.5ML-Terminated Allyl Mercaptan/Si（100）-（2 × 1） Surface

The structural and electronic properties of the 0.5 ML-terminated allyl mercaptan （ALM）/Si（IO0）-（2 x 1） surface are studied using the density functional method. The calculated absorption energy of the ALM molecule on the 0.5 ML-terminated ALM/Si（IO0）-（2 x 1） surface is 3.36eV, implying that adsorption is strongly favorable. The electronic structure calculations show that the ALM/Si（IO0）-（2 x 1）, the clean Si（100）-（2 x 1）, and the fully-terminated H/Si（IO0）-（2 ~ 1） surfaces have the nature of an indirect band gap semiconductor. The highest occupied molecular orbital is dominated by the ALM, confirming the mechanism proposed by Hossain for its chain reaction.     

Multiple—Scattering of Near—Edge x—ray Absorption Fine Structure of Sulphur—Passivated InP（100） Surface

We use the multiple-scattering cluster method to calculated the sulphur 1s near-edge x-ray absorption fine structure (NEXAFS) of S-passivated InP(100) surface.The physical origins of the resonances in the NEXAFS have been unveiled.It is shown that the most important resonance is attributed to the photoelectron scattering between the central sulphur and the nearest indium atoms.The studies show that two S-S dimers with the bond lengths of 2.05A and 3.05A coexist in the surface,meanwhile the bridge and antibridge site adsorption of single S could not be ruled out.We support the scanning tunnelling microscopy result that the S-passivated InP(100) surface exhibits significant discorder.     

Initial Processes of Hydrogen Adsorption on Si(100) Surface

The adsorption of one monolayer H atoms on an ideal Si(100) surface is studied by using the self-consistent tight binding linear muffin-tin orbital method. Energies of adsorption systems of H atoms on different sites are calculated.It is found that the adsorbed H atoms are more favorable on B1 site (bridge site) with a distance 0.056 nm above the Si surface. There does not exist reaction barrier at the Si surface. The layer projected density states are calculated and compared with those of the clean surface. The charge transfers are also investigated.     

Initial Processes of Sulfur Adsorption on Si(100) Surface

The adsorption of one monolayer S atoms on ideal Si(100) surface is studied by using the self-consistent tight binding linear muffin-tin orbital method. Energies of adsorption systems of S atoms on different sites are calculated.It is found that the adsorbed S atoms are more favorable on B1 site (bridge site) with a distance 0.131 nm above the Si surface. The S, Si mixed layer might exist at S/Si(100) interface. The layer projected density of states are calculated and compared with that of the clean surface. The charge transfers are also investigated.     

Adsorption of Fe on GaAs(100) Surface

The adsorption of one monolayer Fe atoms on an ideal GaAs (100) surface is studied by using the self-consistent tight-binding linear muffin-tin orbital method. The Fe adatom chemisorption on Ga- and As-terminatedsurface are considered separately. A monolayer of S atoms is used to saturate the dangling bonds on one of the supercellsurfaces. Energies of adsorption systems of an Fe atom on different sites are calculated, and the charge transfers areinvestigated. It is found that Fe-As interaction is stronger than Fe-Ga interaction and Fe atoms prefer to be adsorbed onthe As-terminated surface. It is possible for the adsorbed Fe atoms to sit below the As-terminated surface resulting inan Fe-Ga-As mixed layer. The layer projected density states are calculated and compared with that of the clean surface.     

洁净和氧吸附的Cu(100)表面重构的理论研究

在密度泛函理论下,计算了清洁和吸附氧原子的Cu(100)表面的驰豫和优势吸附构型。结果表明,氧原子在金属表面采用四重穴位时,具有最大的结合能,顶位吸附时结合能最小,桥位吸附时结合能居间。这一计算结果与实验报道一致。各种密度泛函方法的比较后,发现采用mPW1PW91密度泛函和LanL2dz赝势基组,能够准确给出与实验相符的计算结果。平板模型计算的分态密度图显示,在吸附过程中出现d轨道向Fermi能级移动并越过Fermi能级,而O原子的p轨道能级远离Fermi能级,表明有电子从铜原子的d轨道转移到氧原子的2p轨道,簇模型和平板模型的布居分析显示表面氧带有约0.65～0.7 e的负电荷。研究表明,采用适当的基组和泛函方法,即使采用簇模型来模拟表面,也可以获得与实验比较吻合的计算结果。     

碳吸附于Fe（100）表面的第一性原理研究

本文采用自旋极化密度泛函理论计算了清洁Fe（100）表面及C吸附于Fe（100）表面三种结构: p(2×2)、c(2×2)及p(2×1)。清洁Fe(001)表面只有弛豫,没有重构。吸附C原子的Fe表面体系,最稳定位置为四重空位,空位吸附的C原子实际上与Fe成五重键,这与实验相符。通过对c(2×2)表面结构的电子态密度计算,发现C原子的s、p态与表面Fe原子的d、p及s态都有不同程度的相互作用,成键的主要作用为C2p态与Fe3dx2-y2、3dxy 态的杂化。