Passive magnetic shielded spin polarized electron source with optical electron polarimeter

A new GaAs(100) spin polarized electron source with an optical polarimeter, which is employed in the field of polarized electron and gas atom collision, is presented in detail. The apparatus is passive-magnetic-shielded by a box and a cylinder made of nickel--iron--molybdenum soft magnetic alloy without Helmholtz coil arrangement. And a uniformly distributed residual magnetic field of less than 5×10^-7,T is obtained near the collision area. The spin polarized electron beam is transmitted and focused onto collision point from photocathode by a set of electron optics with more than 25% transmission 95cm distance through an 1mm diameter aperture. Construction and operation of the apparatus, such as vacuum and magnetic shielding system, photocathode, laser optics, electron optics and polarimeter are discussed. The polarization of the spin polarized electron beam is determined to be 30.8\pm3.5% measured with a He optical polarimeter.     

Optical spin orientation of a single manganese atom in a quantum dot

The magnetic state of a single magnetic atom (Mn) embedded in an individual semiconductor quantum dot is optically probed using micro-spectroscopy. A high degree of spin polarization can be achieved for an individual Mn atom localized in a quantum dot using quasi-resonant or fully-resonant optical excitation at zero magnetic field. Optically created spin polarized carriers generate an energy splitting of the Mn spin and enable magnetic moment orientation controlled by the photon helicity and energy. The dynamics and the magnetic field dependence of the optical pumping mechanism shows that the spin lifetime of an isolated Mn atom at zero magnetic field is controlled by a magnetic anisotropy induced by the built-in strain in the quantum dots. The Mn spin distribution prepared by optical pumping is fully conserved for a few microseconds. This opens the way to full optical control of the spin state of an individual magnetic atom in a solid state environment.     

Optical manipulation of a single Mn spin in a CdTe quantum dot

In this paper we demonstrate optical writing of information on the spin state of a single Mn ion embedded in a CdTe/ZnTe quantum dot. As a tool for Mn spin orientation we use a spin-conserving transfer of excitation between two coupled quantum dots, one of them containing the Mn ion. Excitons created by circularly polarized light act on the Mn ion via the sp–d exchange interaction and orient its spin. The magnetic field of 1 T strongly enhances the orientation efficiency due to suppression of fast Mn spin relaxation mechanisms. Dynamics of the Mn spin under polarized excitation was measured in a time-resolved experiment, in which the intensity and polarization of excitation were modulated. Observed dynamics of the Mn spin can be described with a simple rate equation model.     

Knight-field-enabled nuclear spin polarization in single quantum dots

We demonstrate dynamical nuclear-spin polarization in the absence of an external magnetic field by resonant circularly polarized optical excitation of a single electron or hole charged quantum dot. Optical pumping of the electron spin induces an effective inhomogeneous magnetic (Knight) field that determines the direction along which nuclear spins could polarize and enables nuclear-spin cooling by suppressing depolarization induced by nuclear dipole-dipole interactions. Our experiments constitute a first step towards a quantum measurement of the Overhauser field.     

Generating spin currents in semiconductors with the spin Hall effect

We investigate electrically induced spin currents generated by the spin Hall effect in GaAs structures that distinguish edge effects from spin transport. Using Kerr rotation microscopy to image the spin polarization, we demonstrate that the observed spin accumulation is due to a transverse bulk electron spin current, which can drive spin polarization nearly 40 microns into a region in which there is minimal electric field. Using a model that incorporates the effects of spin drift, we determine the transverse spin drift velocity from the magnetic field dependence of the spin polarization.     

Demonstration of electrical spin injection into a semiconductor using a semimagnetic spin aligner

Spin injection into semiconductors has been a field of growing interest during recent years, because of the large possibilities in basic physics and for device applications that a controlled manipulation of the electrons spin would enable. However, it has proven very difficult to realize such a spin injector experimentally. Here we demonstrate electrical spin injection and detection in a GaAs/AlGaAs p-i-n diode using a semimagnetic II–VI semiconductor (Zn_{1 − x − y}Be_xMn_ySe) as a spin aligner. The degree of circular polarization of the electroluminescence from the diode is related to the spin polarization of the conduction electrons. Thus, it may be used as a detector for injected spin-polarized carriers. Our experimental results indicate a spin polarization of the injected electrons of up to 90% and are reproduced for several samples. The degree of optical polarization depends strongly on the Mn concentration and the thickness of the spin aligner. Electroluminescence from a reference sample without spin aligner as well as photoluminescence after unpolarized excitation in the spin aligner sample show only the intrinsic polarization in an external magnetic field due to the GaAs bandstructure. We can thus exclude side effects from Faraday effect or magnetic circular dichroism in the semimagnetic layer as the origin of the observed circularly polarized electroluminescence.     

In-plane magnetic field-induced spin polarization and transition to insulating behavior in two-dimensional hole systems

Using a novel technique, we make quantitative measurements of the spin polarization of dilute [ (3.4-6.8)x10(10) cm(-2)] GaAs (311)A two-dimensional holes as a function of an in-plane magnetic field. As the field is increased the system gradually becomes spin polarized, with the degree of spin polarization depending on the orientation of the field relative to the crystal axes. Moreover, the behavior of the system turns from metallic to insulating before it is fully spin polarized. The minority-spin population at the transition is approximately 8x10(9) cm(-2), close to the density below which the system makes a transition to an insulating state in the absence of a magnetic field.     

Optimised adiabatic fast passage spin flipping for He neutron spin filters

We describe here a method of performing adiabatic fast passage (AFP) spin flipping of polarized ³He used as a neutron spin filter (NSF) to polarize neutron beams. By reversing the spin states of the ³He nuclei the polarization of a neutron beam can be efficiently reversed allowing for the transmission of a neutron beam polarized in either spin state. Using an amplitude modulated frequency sweep lasting 500 ms we can spin flip a polarized ³He neutron spin filter with only 1.8×10⁻⁵ loss in ³He polarization. The small magnetic fields (10-15 G) used to house neutron spin filters mean the ³He resonant frequencies are low enough to be generated using a computer with a digital I/O card. The versatility of this systems allows AFP to be performed on any beamline or in any laboratory using ³He neutron spin filters and polarization losses can be minimised by adjusting sweep parameters.     

Nuclear spin nanomagnet in an optically excited quantum dot

Linearly polarized light tuned slightly below the optical transition of the negatively charged exciton (trion) in a single quantum dot causes the spontaneous nuclear spin polarization (self-polarization) at a level close to 100%. The effective magnetic field of spin-polarized nuclei shifts the optical transition energy close to resonance with photon energy. The resonantly enhanced Overhauser effect sustains the stability of the nuclear self-polarization even in the absence of spin polarization of the quantum dot electron. As a result the optically selected single quantum dot represents a tiny magnet with the ferromagnetic ordering of nuclear spins-the nuclear spin nanomagnet.     

Optical out-of-plane spin polarization and charge conductivities in spin-orbit-coupled systems in the presence of an in-plane magnetic field

Out-of-plane spin and charge responses to the terahertz field for a clean two-dimensional electron gas with a Rashba spin-orbit interaction in the presence of an in-plane magnetic field are studied. We show that the characteristic optical spectral behavior is remarkably different from that of the system in the absence of in-plane magnetic fields. It is found that the optical spin polarization normal to the plane is nonzero even for this clean system, in sharp contrast to the static case. Due to the combined effect of spin-orbit coupling and in-plane magnetic field, both diagonal and off-diagonal components of optical charge conductivity tensor are nonvanishing. It is indicated that one can control the spin polarization and the optical current by adjusting the optical frequency. In addition, the out-of-plane spin polarization and conductivities strongly rely on the direction of the external magnetic field. Nevertheless, they meet different angle-dependent relations. This dynamical out-of-plane spin polarization could be measured by the time-resolved Kerr rotation technique.     

Optical spin injection and spin lifetime in Ge heterostructures

We demonstrate optical orientation in Ge/SiGe quantum wells and study their spin properties. The ultrafast electron transfer from the center of the Brillouin zone to its edge allows us to achieve high spin polarizations and to resolve the spin dynamics of holes and electrons. The circular polarization degree of the direct gap photoluminescence exceeds the theoretical bulk limit, yielding ～37% and ～85% for transitions with heavy and light holes states, respectively. The spin lifetime of holes at the top of the valence band is estimated to be ～0.5 ps and it is governed by transitions between light and heavy hole states. Electrons at the bottom of the conduction band, on the other hand, have a spin lifetime that exceeds 5?ns below 150?K. Theoretical analysis of the spin relaxation indicates that phonon-induced intervalley scattering dictates the spin lifetime of electrons.     

Electron spin polarization in field emission: Calculation of the effects due to external fields

In field emission experiments with spin polarized electrons a magnetic field is superposed on the electric emission field to define the preferred spin direction. The motion of the polarization vector in these fields was calculated for rays emanating from individual points of the emitter by integrating the equation of motion and taking into account relativistic terms. There is a slight shift of the polarization vector from its initial direction. If the initial polarization is aligned with the magnetic field and the emission tip is sufficiently well centred in the magnetic field, the tilting of the polarization vector for a beam of electrons starting not too far from the tip apex is less than 10°.     

Electron spin transition solution applicable to an ensemble of isolated electrons.

An electron spin aligned with a static magnetic field changes its orientation when subjected to a time-varying magnetic field which is directed perpendicular to the static magnetic field. This well-known phenomenon is readily calculated when the time-varying magnetic field is circularly polarized; however, the evolution of the spin-state wavefunctions becomes much more difficult to calculate when the time-varying magnetic field is linearly polarized. For linear polarization and isolated spins, an analytic solution has been derived for the dynamical spin-state wavefunctions. Part of the solution procedure relies on an expansion using a small parameter, which is the ratio of the amplitude of the time-varying magnetic field to the static magnetic field. To verify the validity of the expansion technique, a numerical solution of the basic equations is compared to the analytic solution. Results are found to agree to better than 10% for exact resonance and better than 5% in general.     

Current-induced spin polarization in strained semiconductors

The polarization of conduction electron spins due to an electrical current is observed in strained nonmagnetic semiconductors using static and time-resolved Faraday rotation. The density, lifetime, and orientation rate of the electrically polarized spins are characterized by a combination of optical and electrical methods. In addition, the dynamics of the current-induced spins are investigated by utilizing electrical pulses generated from a photoconductive switch. These results demonstrate the possibility of a spin source for semiconductor spintronic devices without the use of magnetic materials.     

Spin polarization of two-dimensional electron system in different Laughlin states and around filling factor

The spin configuration of the ground state of a two-dimensional electron system is investigated for different FQHE states from an analysis of circular polarization of time-resolved luminescence. The method clearly distinguishes between fully spin polarized, partially spin polarized and spin unpolarized FQHE ground states. We demonstrate that FQHE states which are spin unpolarized or partially polarized at low magnetic fields become fully spin polarized at high fields. Temperature dependence of the spin polarization reveals a nonmonotonic behavior at . At and the electron system is found to be fully spin polarized. This result does not indicate the existence of any skyrmionic excitations in high magnetic field limit. However, at the observed spin depolarization of electron system at and becomes broader for lower magnetic fields, so that full spin polarization remains only in a small vicinity of . Such a behavior could be considered as a precursor of skirmionic depolarization, which would dominate for smaller ratios between Zeeman and Coulomb energies.We demonstrate that the spin polarization of 2D-electron system at and can be strongly affected by hyperfine interaction between electrons and optically spin-oriented nuclears. This result is due to the fact that hyperfine interaction can both enhance and suppress effective Zeeman splitting in fixed external magnetic field.     

一种可用于极化~3He实验的新型磁场系统

原子核自旋极化的~3He气体已被深入研究并广泛用于各种科学实验.在过去的极化~3He实验中,为了减小磁场梯度对纵向弛豫时间的影响,通常会建造大尺寸的亥姆霍兹线圈来提供所需均匀度的主磁场环境.本文通过计算得到了新的六正方形线圈系统,可以为极化~3He实验提供小型高均匀性的磁场装置.其中线圈系√统内部超过30%的区域磁场梯度满足(|▽B_x|~2+|▽B_y|~2)/B_0 10~(-4)cm~(-1),这一均匀区域比例超过了现在所有用于极化~3He实验的线圈装置.对于其他需要大均匀区域磁场环境的研究实验,新的六线圈系统也具有很好的应用价值.     

Optical spin orientation of excitons in GaSe under longitudinal magnetic field

The degree of circular polarization of the free-exciton luminescence line has been measured in GaSe excited by circularly polarized light at 4.2 K under longitudinal magnetic field. The result shows that the spin relaxation time of exciton is field-dependent but the spin memory before reaching the exciton ground state is almost unaffected by the applied longitudinal magnetic field.     

Energy behavior of spin electron cyclotron wave in a spin polarized plasma

In degenerate quantum plasma the energy behavior of electrostatic modes propagating perpendicular to the external magnetic field is studied by employing the separated spin evolution quantum hydrodynamic (SSE-QHD) model. This model reveals that spin electron cyclotron wave (SECW) appears additionally with the upper hybrid wave (UHW). In case of SECW, the curves for the energy flow speed at different levels of spin polarization effect flip over at a particular value of wave number. The spin polarization effect enhances the energy flow speed before this value of wave number and then suppresses it afterward. The energy flow speed is enhanced by spin polarization effect in the entire range of wave number for the propagation of UHW. The Bohm potential effect drastically increases the energy flow speed at high wave number domain in both the waves. This study may find its applications to understand the energy behavior inspin polarized solid state plasmas     

Current and strain-induced spin polarization in InGaN/GaN superlattices

The lateral current-induced spin polarization in InGaN/GaN superlattices (SLs) without an applied magnetic field is reported. The fact that the sign of the nonequilibrium spin changes as the current reverses and is opposite for the two edges provides a clear signature for the spin Hall effect. In addition, it is discovered that the spin Hall effect can be strongly manipulated by the internal strains. A theoretical work has also been developed to understand the observed strain-induced spin polarization. Our result paves an alternative way for the generation of spin polarized current.     

Photoelectron spin polarization via the relativistic augmented-plane-wave method

A method for calculating the spin polarization of photoelectrons excited by circularly polarized light in solids is proposed. The matrix elements of the electron-photon interaction Hamiltonian are obtained with the relativistic augmented-plane-wave method by Loucks. The degree of the spin polarization can be calculated using these matrix elements which represent optical transitions taking into account the spin states.