Optimum Quantum Yield of the Light Emission from 2 to 10 nm Hydrosilylated Silicon Quantum Dots

Optimizing the light‐emitting efficiency of silicon quantum dots (Si QDs) has been recently intensified by the demand of the practical use of Si QDs in a variety of fields such as optoelectronics, photovoltaics, and bioimaging. It is imperative that an understanding of the optimum light‐emitting efficiency of Si QDs should be obtained to guide the design of the synthesis and processing of Si QDs. Here an investigation is presented on the characteristics of the photoluminescence (PL) from hydrosilylated Si QDs in a rather broad size region (≈2–10 nm), which enables an effective mass approximation model to be developed, which can very well describe the dependence of the PL energy on the QD size for Si QDs in the whole quantum‐confinement regime, and demonstrates that an optimum PL quantum yield (QY) appears at a specific QD size for Si QDs. The optimum PL QY results from the interplay between quantum‐confinement effect and surface effect. The current work has important implications for the surface engineering of Si QDs. To optimize the light‐emission efficiency of Si QDs, the surface of Si QDs must be engineered to minimize the formation of defects such as dangling bonds at the QD surface and build an energy barrier that can effectively prevent carriers in Si QDs from tunneling out.     

Tunable and High Photoluminescence Quantum Yield from Self‐Decorated TiO2 Quantum Dots on Fluorine Doped Mesoporous TiO2 Flowers by Rapid Thermal Annealing

Herein a novel approach is reported to achieve tunable and high photoluminescence (PL) quantum yield (QY) from the self‐grown spherical TiO₂ quantum dots (QDs) on fluorine doped TiO₂ (F‐TiO₂) flowers, mesoporous in nature, synthesized by a simple solvothermal process. The strong PL emission from F‐TiO₂ QDs centered at ≈485 nm is associated with shallow and deep traps, and a record high PL QY of ≈5.76% is measured at room temperature. Size distribution and doping of F‐TiO₂ nanocrystals (NCs) are successfully tuned by simply varying the HF concentration during synthesis. During the post‐growth rapid thermal annealing (RTA) under vacuum, the arbitrary shaped F‐TiO₂ NCs transform into spherical QDs with smaller sizes and it shows dramatic enhancement (≈163 times) in the PL intensity. Electron spin resonance (ESR) and X‐ray photoelectron spectroscopy (XPS) confirm the high density of oxygen vacancy defects on the surface of TiO₂ NCs. Confocal fluorescence microscopy imaging shows bright whitish emission from the F‐TiO₂ QDs. Low temperature and time resolved PL studies reveal that the ultrafast radiative recombination in the TiO₂ QDs results in highly efficient PL emission. A highly stable, biologically inert, and highly fluorescent TiO₂ QDs/flowers without any capping agent demonstrated here is significant for emerging applications in bioimaging, energy, and environmental cleaning.     

Photoluminescence Characteristics of ZnCuInS-ZnS Core-Shell Semiconductor Nanocrystals

The photoluminescence(PL) characteristics of ZnCuInS quantum dots(QDs) with varying ZnS shell thicknesses of 0, 0.5, and 1.5 layers are investigated systemically by time-correlated single-photon counting measurements and temperature-dependent PL measurements. The results show that a ZnS shell thickness of 1.5 layers can effectively improve the PL quantum yield in one order of magnitude by depressing the surface trapping states of the core ZnCuInS QDs at room temperature. However, the PL measurements at the elevated temperature reveal that the core-shell nanocrystals remain temperature-sensitive with respect to their relatively thin shells.The temperature sensitivity of these small-sized single-layered core-shell nanocrystals may find applications as effective thermometers for the in vivo detection of biological reactions within cells.     

Mn掺杂ZnSe量子点变温发光性质研究

量子点(QD)照明器件中电流导致的焦耳热会使其工作温度高于室温,因此研究量子点的发光热稳定性十分重要。本文利用稳态光谱和时间分辨光谱研究了具有不同壳层厚度的Mn掺杂ZnSe(Mn: ZnSe)量子点的变温发光性质,温度范围是80～500 K。实验结果表明,厚壳层(6.5单层(MLs))Mn: ZnSe量子点的发光热稳定性要优于薄壳层(2.6 MLs)的量子点。从80 K升温到400 K的过程中,厚壳层Mn: ZnSe量子点的发光几乎没有发生热猝灭,发光量子效率在400 K高温下依然可以达到60%。通过对比Mn: ZnSe量子点的变温发光强度与荧光寿命,对Mn: ZnSe量子点发光热猝灭机制进行了讨论。最后,为了研究Mn: ZnSe量子点的发光热猝灭是否为本征猝灭,对具有不同壳层厚度的Mn: ZnSe量子点进行了加热-冷却循环(300-500-300 K)测试,发现厚壳层的Mn: ZnSe量子点的发光在循环中基本可逆。因此,Mn: ZnSe量子点可以适用于照明器件,即使器件中会出现不可避免的较强热效应。     

Giant enhancement of photoluminescence emission in monolayer WS2by femtosecond laser irradiation

Monolayer transition metal dichalcogenides have emerged as promising mat erials for opt oelectTonic and nanophotonic devices.However,the low photoluminescence(PL)quantum yield(QY)hinders their various potential applications.Here we engineer and enhance the PL intensity of monolayer WS₂by femtosecond laser irradiation.More than two orders of magnitude enhancement of PL intensity as compared to the as-prepared sample is determined.Furthermore,the engineering time is shortened by three orders of magnitude as compared to the improvement of PL intensity by continuous-wave laser irradiation.Based on the evolution of PL spectra,we attribute the giant PL enhancement to the conversion from trion emission to exciton,as well as the improvement of the QY when exciton and trion are localized to the new-formed defects.We have created microstructures on the monolayer WS₂based on the enhancement of PL intensity,where the engineered structures can be stably stored for more than three years.This flexible approach with the feature of excellent long-term storage stability is promising for applications in information storage,display technology,and opto electronic devices.     

Effect of Spectral Overlap and Separation Distance on Exciton and Biexciton Quantum Yields and Radiative and Nonradiative Recombination Rates in Quantum Dots Near Plasmon Nanoparticles

Efficient biexciton (BX) photoluminescence (PL) from quantum dots (QDs) paves the way to the generation of entangled photons and related applications. However, the quantum yield (QY) of BX PL is much lower than that for single excitons (EX) due to efficient Auger-like recombination. In the vicinity of plasmon nanoparticles, the recombination rates of EX and BX may be affected by the Purcell effect, fluorescence quenching, and the excitation rate enhancement. Here, the effect of the plasmon resonance spectral position on the EX and BX PL is experimentally studied in two cases: when the plasmon band overlaps with the excitation wavelength and when it coincides with the QDs PL band. In the first case, the EX and BX excitation efficiencies are significantly increased but the EX QY reduced. As a result, the BX-to-EX QY ratio is higher than 1 at plasmon–exciton systems separations shorter than 40 nm. In the second case, the radiative recombination rates are enhanced by several orders of magnitude, which led to an increase in BX QY over distances of up to 90 nm. Finally, these two effects are obtained in the same hybrid structure, with the resultant increase in both excitation efficiency and QY of BX PL.     

Preparation of Highly Stable and Photoluminescent Cadmium-Free InP/GaP/ZnS Core/Shell Quantum Dots and Application to Quantitative Immunoassay

Indium phosphide (InP) quantum dots (QDs) are ideal substitutes for widely used cadmium-based QDs and have great application prospects in biological fields due to their environmentally benign properties and human safety. However, the synthesis of InP core/shell QDs with biocompatibility, high quantum yield (QY), uniform particle size, and high stability is still a challenging subject. Herein, high quality (QY up to 72%) thick shell InP/GaP/ZnS core/shell QDs (12.8 ± 1.4 nm) are synthesized using multiple injections of shell precursor and extension of shell growth time, with GaP serving as the intermediate layer and 1-octanethiol acting as the new S source. The thick shell InP/GaP/ZnS core/shell QDs still keep high QY and photostability after transfer into water. InP/GaP/ZnS core/shell QDs as fluorescence labels to establish QD-based fluorescence-linked immunosorbent assay (QD-FLISA) for quantitative detection of C-reactive protein (CRP), and a calibration curve is established between fluorescence intensity and CRP concentrations (range: 1–800 ng mL⁻¹, correlation coefficient: R² = 0.9992). The limit of detection is 2.9 ng mL⁻¹, which increases twofold compared to previously reported cadmium-free QD-based immunoassays. Thus, InP/GaP/ZnS core/shell QDs as a great promise fluorescence labeling material, provide a new route for cadmium-free sensitive and specific immunoassays in biomedical fields.     

Aqueous phase-synthesized small CdSe quantum dots: adsorption layer structure and strong band-edge and surface trap emission

We synthesized, in aqueous solution at room temperature, small water-soluble CdSe quantum dots (QDs) with strong photoluminescence (PL) and then correlated the PL with their adsorption layer structure. For synthesizing the QDs, their initial synthesis condition was controlled to form small Cd-containing species capable of passivating dangling bonds on the CdSe core surface. Each CdSe QD (d ~ 2.5 nm) consisted of a CdSe core (d ~ 2.1 nm), a cysteine (cys)-ligand shell, and an adsorption layer composed of Cd–cys complexes (mainly CdL(-H)⁻, cys ≡ H₂L), cys (as L²⁻), Cd(OH)₂, and CdO _x (x ≥ 1). Our CdSe QDs showed strong blue band-edge PL as well as strong green surface trap PL. Their PL quantum yield (QY) of ~18% was unexpectedly high, considering their extremely small core size and their absence of any wide-bandgap inorganic shell. We attributed the QY to their adsorption layer species. The small weakly charged Cd–cys complex and the small neutral cadmium oxides in the adsorption layer could relatively readily diffuse into the unprotected surface sites on the core. These wide-bandgap species coalesced selectively on the unprotected surface sites with minimal spatial disturbance to the preexisting surface Cd-ligand coordination, and passivated them effectively. These decreased nonradiative recombination of the excitons significantly and thus led to the unexpectedly high QYs.     

Identification of surface states in PbS quantum dots by temperature dependent photoluminescence

We report the type and nature of the surface states in PbS quantum dots grown in poly vinyl alcohol by the colloidal technique. Mercaptoethanol (C₂H₅OSH) capping and the molar ratio of Pb:S were used as parameters to understand the origin of the surface state related photoluminescence. From absorption and photoluminescence measurements, it was observed that increasing Lead concentration resulted in bigger nanoparticles with broad size distribution. However, the increase in sulfur concentration helped in the formation of smaller nanoparticles with narrow size distribution. Passivation studies also revealed that the origin of the bands below 1.1 eV was sulfur related. Thus these experiments indicated that sulfur played an important role, not only in size selectivity, but also in controlling defects in PbS quantum structures. Temperature dependent PL studies on different samples with various Pb:S molar ratios and with mercaptoethanol treated gave an insight into the nature of the surface states. Based on these results, we explain the origin of the surface states and proposed a model for different PL bands. The observed temperature-dependent trends of PL intensity (decreasing in Pb:S::1:1, increasing in S terminated and anomalous behavior in samples with excess of Pb) is attributed to the dominant mid-gap states and the results are consistent with carrier redistribution and recombination statistics involved in the quantum structures.     

Sonoelectrochemical synthesis of water-soluble CdTe quantum dots

A facile and fast one-pot method has been developed for the synthesis of CdTe quantum dots (QDs) in aqueous phase by a sonoelectrochemical route without the protection of N₂. The morphology, structure and composition of the as-prepared products were investigated by high resolution transmission electron microscopy (HRTEM), X-ray diffraction (XRD) and energy dispersive X-ray spectrometer (EDS). The influences of current intensity, current pulse width, and reaction temperature on the photoluminescence (PL) and quantum yield (QY) of the products were studied. The experimental results showed that the water-soluble CdTe QDs with high PL qualities can be conveniently synthesized without precursor preparation and N₂ protection, and the PL emission wavelength and QY can be effectively controlled by adjusting some parameters. This method can be expected to prepare other QDs as promising building blocks in solar cell, photocatalysis and sensors.     

Pressure-dependent photoluminescence of CdSe/ZnS quantum dots: Critical point of different pressure regimes

High pressure condition can alter and control the electronic structure of semiconductor quantum dots, and therefore provides novel insight for designing optoelectronic devices. Here we report the pressure-dependent photoluminescence (PL) of CdSe/ZnS core/shell quantum dots (QD) in different pressure regimes. The center of the PL spectrum has blue-shift when hydrostatic pressure increases, due to the increasing bulk modulus. However, the shifting rate becomes lower in the higher pressure regime, i.e. above the critical pressure point, mainly due to the interaction between QDs. Accordingly, the lifetimes of PL drop in the low pressure regime, due to the increased pressure-induced trapping states, then increase above the critical pressure point, indicating the interaction between dots likewise. The observed critical pressures for both cases are consistent with each other, and strongly depend on the QD concentration, which forcefully support the aforementioned interaction model.     

Multicolor Light‐Emitting Diodes with MoS2 Quantum Dots

Molybdenum disulfide (MoS₂) quantum dots (QDs) are known for their excitation‐wavelength‐dependent photoluminescent (PL) properties. However, the mechanism of this phenomenon is still unclear. Here, small size MoS₂ QDs with a narrow size distribution are synthesized. Based on the decay study and PL dynamics, a reasonable radiation model is presented to understand the special PL properties, i.e., the carrier recombination in the localized surface defect states generated the PL. Accordingly, this optical property is used to fabricate multicolor light‐emitting devices with the same MoS₂ QDs. The emission color covers the full visible spectrum from blue to red, only by adjusting the thickness of the down‐conversion QD layers.     

Optical transitions and carrier dynamics in self-organized InAs quantum dots grown on In0.52Al0.48As/InP(0 0 1)

Optical transitions in self-organized InAs quantum dots (QDs) grown on In_0.52Al_0.48As layer lattice matched to InP(0 0 1) substrate, have been studied by continuous wave (cw) photoluminescence (PL) and time-resolved PL. The dependence of the PL transition on excitation power and photoluminescence excitation measurements clearly shows that the multi-component cw-PL spectrum is related to emission coming from ground and related excited states of QDs with heights varying by monolayer fluctuations. While decay times measured by time-resolved PL are in the nanosecond range for the ground states, shorter decay times related to relaxation of carriers down directly to the ground state are determined for the excited states.     

Synthesis and Characterization of CdS/CISe Quantum Dots with Core–Shell Structure

Quantum dots have received great interest due to their excellent optoelectronic properties. However, the surface defects of quantum dots affect the carrier transport and ultimately reduce the photovoltaic efficiency. In this paper, a core–shell quantum dot by hot-injection method is prepared to grow a narrow-band semiconductor layer (CuInSe₂ (CISe) quantumdot) on the surface of a broad-band core material (cadmium sulfide (CdS) nanocrystal). The composition, structure, optical properties, and decay lifetime of CdS/CISe core–shells are investigated in more detail by X-ray diffraction (XRD), transmission electron microscopy (TEM), photoluminescence (PL), UV–vis spectrophotometry, and fluorescence spectroscopy. The CdS/CISe core–shell structure has a broadened absorption range and still shows CISe-related quantum effects. The increased size of the core–shell and the smaller specific surface area of the CISe shell layer lead to a lower carrier complexation chance, which improves the carrier lifetime.     

Efficient Quantum Dot Light-Emitting Diodes Based on Well-Type Thick-Shell CdxZn1−xS/CdSe/CdyZn1−yS Quantum Dots

Device grade quantum dots (QDs) require QDs ensembles to retain their original superior optical properties as in solution. QDs with thick shells are proven effective in suppressing the inter-dot interaction and preserving the emission properties for QDs solids. However, lattice strain–induced defects may form as the shell grows thicker, resulting in a notable photoluminescence quenching. Herein, a well-type Cd_xZn_1−xS/CdSe/Cd_yZn_1−yS QDs is proposed, where ternary alloys CdZnS are adopted to match the lattice parameter of intermediate CdSe by separately adjusting the x and y parameters. The resultant thick-shell Cd_0.5Zn_0.5S/CdSe/Cd_0.73Zn_0.27S QDs reveal nonblinking properties with a high PL QY of 99% in solution and 87% in film. The optimized quantum dot light-emitting diodes (QLEDs) exhibit a luminance of 31547.5 cd m⁻² at the external quantum efficiency maximum of 21.2% under a bias of 4.0 V. The shell thickness shows great impact on the degradation of the devices. The T₅₀ lifetime of the QLEDs with 11.2 nm QDs reaches 251 493 h, which is much higher than that of 6.5 and 8.4 nm QDs counterparts. The performances of the well-type thick-shell QLEDs are comparable to state-of-the-art devices, suggesting that this type of QDs is a promising candidate for efficient optoelectronic devices.     

Re-charging the luminescence states in CdSe/ZnS quantum dots at the conjugation to Osteopontin antibodies

The paper presents the original study of photoluminescence (PL) and Raman scattering spectra of core–shell CdSe/ZnS quantum dots (QDs) covered by the amine-derivatized polyethylene glycol (PEG) with luminescence interface states. First commercially available CdSe/ZnS QDs with emission at 640 nm (1.94 eV) covered by PEG polymer have been studied in nonconjugated states. PL spectra of nonconjugated QDs are characterized by a superposition of PL bands related to exciton emission in a CdSe core and to the hot electron–hole recombination via high energy luminescence states. The study of high energy PL bands in QDs at different temperatures has shown that these PL bands are related to luminescence interface states at the CdSe/ZnS or ZnS/polymer interface. Then CdSe/ZnS QDs have been conjugated with biomolecules—the Osteopontin antibodies. It is revealed that the PL spectrum of bioconjugated QDs changed essentially with decreasing hot electron–hole recombination flow via luminescence interface states. It is shown that the QD bioconjugation process to Osteopontin antibodies is complex and includes the covalent and electrostatic interactions between them. The variation of PL spectra due to the bioconjugation is explained on the basis of electrostatic interaction between the QDs and biomolecule dipoles that stimulates re-charging QD interface states. The study of Raman scattering of bioconjugated CdSe/ZnS QDs has confirmed that the antibody molecules have the electric dipoles. It is shown that CdSe/ZnS QDs with luminescence interface states are promising for the study of bioconjugation effects with specific antibodies and can be a powerful technique in biology and medicine.     

Temperature-dependent photoluminescence of CuInS2 quantum dots

Temperature-dependent photoluminescence (PL) spectroscopy of CuInS₂ core and CuInS₂/ZnS core–shell quantum dots (QDs) was studied for understanding the influence of a ZnS shell on the PL mechanism. The PL quantum yield and lifetime of CuInS₂ core QDs were significantly enhanced after the QD surface was coated with the ZnS shell. The temperature dependences of the PL energy, linewidth, and intensity for the core and core–shell QDs were studied in the temperature range from 92 to 287 K. The temperature-dependent shifts of 98 meV and 35 meV for the PL energies of the QDs were much larger than those of the excitons in their bulk semiconductors. It was surprisingly found that the core and core–shell QDs exhibited a similar temperature dependence of the PL intensity. The PL in the CuInS₂/ZnS core–shell QDs was suggested to originate from recombination of many kinds of defect-related emission centers in the interior of the cores.     

Synthesis of CdTe quantum dots using a heterogeneous process at low temperature and their optical and structural properties

Luminescent CdTe quantum dots (QDots) have been synthesized through a low-temperature process employing a heterogeneous reaction between cadmium acetate and tri-n-octyl phosphine tellurium (TOPTe) in the presence of tri-n-octyl phosphine oxide (TOPO). UV-visible absorption spectra revealed that monodispersed CdTe QDots were synthesized at 70 °C for 240 min. The as-synthesized CdTe QDots exhibited photoluminescence (PL) with a narrow spectral distribution (FWHM41 nm). Highly luminescent CdTe QDots with PL quantum yield (QY) up to 33% were size selected from the ensemble. X-ray and electron diffraction measurements revealed that CdTe crystallized in a wurtzite-type structure at 70 °C. High-resolution transmission electron microscopic measurements revealed that the CdTe particles were of regular spherical morphology with an average diameter of 2.8 nm. The present experiment demonstrates, in addition to an advantage in green chemistry, that a low-temperature process allows an extended period of time for crystallization that is useful for synthesizing defect-free QDots with higher PL QY. PACS 81.07.-b; 81.20.-n; 81.07.Ta; 78.67.-n; 61.46.+w     

Theoretical study of quantum-confined band-edge shifts and radiative lifetimes in oxidized Si(001) quantum films: comparison with experiment for Si/SiO2 quantum wells

The electronic structure and radiative lifetimes of Si(001) quantum films terminated by SiO₄ tetrahedra, which simulate Si/SiO₂ quantum wells (QWs), are calculated by the extended Hückel-type non-orthogonal tight-binding method. It is found that calculated band-gap widenings and radiative lifetimes account for band-edge shifts and photoluminescence (PL) peak shifts and lifetimes measured in amorphous-Si/SiO₂ QWs, suggesting that quantum confinement effects on the extended band-edge states in the amorphous-Si layer are responsible for the observed results. However, it is shown that band-edge shifts and PL energies and lifetimes observed in crystalline-Si/SiO₂ QWs cannot be reproduced properly by the interface model proposed in this study, implying that further studies are needed on the atomic structure of the crystalline-Si/SiO₂ interface.     

Size‐Dependent Structural and Optical Characteristics of Glucose‐Derived Graphene Quantum Dots

It is of scientific importance to obtain graphene quantum dots (GQDs) with narrow‐size distribution in order to unveil their size‐dependent structural and optical properties, thereby further to explore the energy band diagram of GQDs. Here, a soft‐template microwave‐assisted hydrothermal method to prepare GQDs with diameters less than 5 nm ± 0.55 nm is reported. The size‐dependent photoluminescence (PL) quantum yield (QY) decay lifetime and electron energy loss spectroscopy (EELS) of the GQDs are studied systematically. The QY of the GQDs with an average diameter of 2 nm is the highest (15%) among all the samples investigated and the QY decreases with increasing diameter of the GQDs. The size‐dependence of the PL decay lifetime is also observed. The result suggests that spatial confinement effects related to radiative relaxation play an important role in the size‐dependent decay lifetime. A realistic energy band diagram of the GQDs is deduced from the experimental results.