Synthesis and optical properties of Ce-doped Y3Mg2AlSi2O12 phosphors

Y_3−xMg₂AlSi₂O₁₂:Ce_x³⁺ (x=0.015, 0.03 and 0.06) phosphors possessing garnet crystal structure were synthesized by the sol–gel combustion technique. The samples were characterized by application of powder X-ray diffraction (XRD), photoluminescence (PL) spectroscopy, thermal quenching (TQ) and scanning electron microscopy (SEM). Moreover, luminous efficacies (LE), color points and quantum efficiencies (QE) were calculated. Optical properties were studied as a function of Ce³⁺ concentration and annealing temperature. XRD analysis revealed that sintering of polycrystalline Y₃Mg₂AlSi₂O₁₂:Ce³⁺ powders at 1550 °C results in nearly single-phase garnet materials. Phosphors showed broad emission band in the range of 500–750 nm and had the maximum intensity at 600 nm, which results in strongly red-shifted phosphors compared with conventional YAG:Ce phosphors emitting at 560 nm. However, strong concentration quenching has also been observed, probably due to increased Stokes shift.     

The effects of substrate temperature on the structure, morphology and photoluminescence properties of pulsed laser deposited SrAl2O4:Eu,Dy thin films

In this study, SrAl₂O₄:Eu²⁺,Dy³⁺ thin film phosphors were deposited on Si (1 0 0) substrates using the pulsed laser deposition (PLD) technique. The films were deposited at different substrate temperatures in the range of 40-700 °C. The structure, morphology and topography of the films were determined by using X-ray diffraction (XRD), atomic force microscopy (AFM), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM). Photoluminescence (PL) data was collected in air at room temperature using a 325 nm He-Cd laser as an excitation source. The PL spectra of all the films were characterized by green phosphorescent photoluminescence at ∼530 nm. This emission was attributed to 4f⁶5d¹→4f⁷ transition of Eu²⁺. The highest PL intensity was observed from the films deposited at a substrate temperature of 400 °C. The effects of varying substrate temperature on the PL intensity were discussed.     

Sol-gel growth of Gd2MoO6:Eu nanocrystalline layers on SiO2 spheres (SiO2@Gd2MoO6:Eu) and their luminescent properties

SiO₂@Gd₂MoO₆:Eu³⁺ core-shell phosphors were prepared by the sol-gel process. X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectra (EDS), transmission electron microscopy (TEM), photoluminescence (PL) spectra as well as kinetic decays were used to characterize the resulting SiO₂@Gd₂MoO₆:Eu³⁺ core-shell phosphors. The XRD results demonstrate that the Gd₂MoO₆:Eu³⁺ layers on the SiO₂ spheres begin to crystallize after annealing at 600 °C and the crystallinity increases with raising the annealing temperature. The obtained core-shell phosphors have a near perfect spherical shape with narrow size distribution (average size ca. 600 nm), are not agglomerated, and have a smooth surface. The thickness of the Gd₂MoO₆:Eu³⁺ shells on the SiO₂ cores could be easily tailored by varying the number of deposition cycles (50 nm for four deposition cycles). The Eu³⁺ shows a strong PL luminescence (dominated by ⁵D₀-⁷F₂ red emission at 613 nm) under the excitation of 307 nm UV light. The PL intensity of Eu³⁺ increases with increasing the annealing temperature and the number of coating cycles.     

Preparation and photoluminescent properties of Ni-doped ZrO2 fibers

Ni²⁺-doped ZrO₂ precursor fibers were prepared via sol-gel technique by dry-spinning method and then heat-treated at different temperatures. The surface of the fibers is smooth with uniform diameter and no cracks have been observed by scanning electron microscopy (SEM). The emission intensity reaches a maximum value at 1 mol% Ni²⁺ because of the concentration quenching. The photoluminescence (PL) relative intensity is apparently intensifying with increasing temperature before 700 °C due to the crystallinity of the ZrO₂ lattice improvement. The PL results show that the typical emission center is at 510 nm excited at 315 nm.     

Effects of annealing temperature on YAG:Ce synthesized by spray-drying method

In this report, YAG:Ce phosphors were synthesized by spray-drying method. The effects of annealing temperature on crystal structure, morphology and photoluminescence property (PL) of as-prepared samples were investigated by X-ray diffraction (XRD), scanning electron microscopy (SEM) and spectrofluorometer, respectively. The XRD patterns showed all the samples are in consistence with a single garnet phase, and the location of strongest peak shifts to smaller angle with increasing the annealing temperature. The SEM micrographs revealed the sample annealed at 1200 °C appears to be a spherical polycrystalline aggregate; as the samples were annealed at 1300?1400 °C, spherical grains obviously grow up; but the sample annealed at over 1400 °C forms an irregular bulk. The emission spectra of samples indicated the PL of samples annealed at 1200?1400 °C improve with increasing the annealing temperature because of the diffusion of Si⁴⁺ ions; whereas the PL of sample annealed at the temperature over 1400 °C decreases likely resulting from inflection effects of multiangular shape of grains. Therefore, the samples annealed at 1400 °C are suitable for gaining phosphor with high brightness and good morphology.     

Luminescence properties of Y3Al5O12:Ce nanoceramics

Comparative analysis of the luminescent properties of Y₃Al₅O₁₂:Ce (YAG:Ce) transparent optical ceramics (OС) with those of single crystal (SC) and single crystalline film (SCF) analogues has been performed under excitation by pulsed synchrotron radiation in the fundamental absorption range of YAG host. It has been shown that the properties of YAG:Ce OC are closer to the properties of the SCF counterpart, where Y_Al antisite defects are completely absent, rather than to the properties of SC of this garnet with large concentration of Y_Al antisite defects. At the same time, the luminescence spectra of YAG:Ce OC show weak emission bands in the 200-470 nm range related to Y_Al antisite defects and charged oxygen vacancies (F⁺ and F centers). YAG:Ce ОС also possesses significantly larger contribution of slow components in the Ce³⁺ luminescence decay under high-energy excitation in comparison with SC and SCF of this garnet due to the involvement of antisite defects, charged oxygen vacancies as well as boundaries of grains in the energy transfer processes from the host to the Ce³⁺ ions.     

Synthesis and photoluminescence of CeO2:Eu phosphor powders

The crystalline structure and photoluminescence (PL) properties of europium-doped cerium dioxide synthesized by the solid-state reaction method were analyzed. CeO₂:Eu³⁺ phosphor powders exhibit the pure cubic fluorite phase up to 10 mol% doping concentration of Eu³⁺. With indirect excitation of CeO₂ host at 373 nm, the PL intensity quickly increases with increasing Eu³⁺ concentration, up to about 1 mol%, and then decreases indicating the concentration quenching. While with direct excitation (467 nm), much more stronger PL emissions, especially the electric dipole emission ⁵D₀-⁷F₂ at 612 nm, are observed and no concentration quenching occurs up to 10 mol% doping concentration of Eu³⁺. The nature of this behavior and the cause of the concentration quenching were discussed.     

Eu activated M6AlP5O20 (M=Sr/Ba/Mg) novel red phosphors

Eu³⁺ activated M₆AlP₅O₂₀ (where M=Sr/Ba/Mg) phosphors prepared by combustion synthesis and the completion of the synthesis was confirm by XRD (X-ray diffraction) patterns. The surface morphology studied by scanning electron microscopy (SEM) and photoluminescence (PL) properties has been reported in this paper. The Eu³⁺ PL emission spectrum was observed in M₆AlP₅O₂₀ phosphors (where M=Sr/Ba/Mg) at 592 (orange) and 618 nm (red) region, the spectrum due to ⁵D₀→⁷F₁ and ⁵D₀→⁷F₂ transitions at mercury free excitation, respectively. Its considerable emission intensity under 350 nm excitations makes it possible candidate materials as red component of tricolor luminescence materials and for near ultra violet light emitting diode (n-UVLED) phosphors.     

Synthesis and VUV spectral properties of nanoscaled Zn2SiO4:Mn green phosphor

Nanoscaled Zn₂SiO₄:Mn²⁺ green phosphor with regular and uniform morphology was synthesized by hydrothermal method at a low temperature of 140 °C. The structure and morphology of the phosphor was characterized by X-ray diffraction (XRD) and transmission electron microscopy (TEM). The effects of the hydrothermal temperature and the time on the crystallite structure and the vacuum ultraviolet (VUV) photoluminescence (PL) properties were evaluated. The as-synthesized nanoscaled Zn₂SiO₄:Mn²⁺ phosphor exhibited intensive broad emission around 523 nm, which was attributed to the ⁴T₁→⁶A₁ transition of Mn²⁺. The PL intensity increased along with the increasing hydrothermal temperature and time. The heat-treated phosphors exhibited higher PL intensity than the corresponding samples prepared using the conventional solid-state reaction.     

纳米YAG∶Ce3+, Mn+(Mn+=Ca2+, Gd3+)荧光粉的结构与发光性能

当前商用白光LED器件中YAG∶Ce3+荧光粉的单一黄光发射,导致其缺乏红光限制了器件的应用和发展,在YAG∶Ce3+中掺杂其他离子是解决该问题的有效途径之一。采用溶胶凝胶法制备了系列单掺Ce3+,Ca2+和Gd3+的YAG纳米荧光粉。研究了离子掺杂量对荧光粉的物相、结构、形貌、粒度、发光性能及量子效率的影响,分析了发光机理。结果表明：制备的纳米荧光粉粒径为100～200 nm。Ce3+和Gd3+掺杂时均得到YAG纯相,但晶体结构膨胀,晶面衍射峰向小角度方向移动。样品结晶度随Ce3+和Ca2+(<0.025 mol)掺杂量增大变化不明显,随Gd3+则呈现逐步降低趋势。三种离子掺杂量增大时,Ce3+的晶格能上升,5d能级晶体场劈裂加剧;Gd系列荧光粉激发和发射光谱随掺杂量的增大发生红移,Ce和Ca系列则因掺杂量小表现不明显。荧光粉发光强度随Ce3+掺杂量上升先增大后减小,最佳掺杂量为0.06 mol;随Gd3+掺杂量增加逐步降低;随Ca2+掺杂量增大则急剧下降,0.03 mol掺杂量时荧光强度几乎为零,YAG晶体结构破坏,生成YAM和YAP相。研究的开展,将对后续纳米YAG荧光粉及其相关功能材料的进一步开发使用提供一定的理论依据和实践参考。     

Synthesis and characterization of novel red emitting nanocrystal Gd6WO12:Eu phosphors

Novel nanosized Gd₆WO₁₂:Eu³⁺ phosphors were synthesized via a co-precipitation reaction. The crystal structure and morphology of the phosphors were characterized by using X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM). It was found that the resultant powders show a regular and sphere-like shape with average particle size of 60 nm. Intrinsic red emission originating from Eu³⁺ was observed while excited at the W⁶⁺→O²⁻ and Eu³⁺→O²⁻ charge transfer bands or f-f absorption bands. The color coordinates of the phosphors were calculated to be x=0.625, y=0.375. The concentration dependence of the luminescence was studied, and optimum doping concentration for obtaining maximum emitting intensity was confirmed to be around 12 mol%. It was also found that the electric dipole-dipole interaction plays an important role for quenching luminescence of Eu³⁺.     

Solution-combustion synthesis of Tb-doped Y3Al5O12 nanoparticles

Nano-sized YAG:Tb powder phosphors were prepared by a solution-combustion method, using the general inorganic salts as starting materials. The X-ray diffraction (XRD) measurements showed that the precursor can be well-crystallized at 900 °C. As-prepared particles have sizes mostly in the range between 30 and 100 nm as obtained by scanning electron microscope (SEM) and transition electron microscope (TEM). Selected area electron diffraction (SAED) patterns proved that the larger particles are monocrystalline. The effects of annealing temperature and Tb-doping concentration on the luminescence intensity were studied.     

Luminescence in trivalent rare earth activated Sr4Al2O7 phosphor

In this paper we report the combustion synthesis of trivalent rare-earth (RE³⁺ = Dy, Eu and Ce) activated Sr₄Al₂O₇ phosphor. The prepared phosphors were characterized by the X-ray powder diffraction (XRD) and photoluminescence (PL) techniques. Photoluminescence emission peaks of Sr₄Al₂O₇:Dy³⁺ phosphor at 474 nm and 578 nm in the blue and yellow region of the spectrum. The prepared Eu³⁺ doped phosphors were excited by 395 nm then we found that the characteristics emission of europium ions at 615 nm (⁵D₀?⁷F₂) and 592 nm (⁵D₀?⁷F₁). Photoluminescence (PL) peaks situated at wavelengths of 363 and 378 nm in the UV region under excitation at around 326 nm in the Sr₄Al₂O₇:Ce³⁺ phosphor.     

Preparation and luminescent properties of phosphor MGd2(MoO4)4: Eu (M=Ca, Sr and Ba)

Intense red emitting phosphors MGd₂(MoO₄)₄: Eu³⁺ (M=Ca, Sr and Ba) have been synthesized by the simple sol-gel technique. The formation processes and the phase impurity of phosphors are characterized by thermogravimetry-differential thermal analysis (TG-DTA) and power X-ray diffraction (XRD). The narrower size distribution and the regular shape of the phosphor particles are also measured by Field emission scanning electronic microscopy (FE-SEM). Photo-luminescent properties of the phosphors are performed at room temperature. Their excitation spectra present strong absorption at 395 nm near-UV light and 465 nm blue light, which match well with commercial LED chips. The phosphors exhibit satisfactory and excellent red light dominated by 616 nm and their photoluminescence intensity is about 3-4 times stronger than that of phosphor YAG under the 465 nm excitation. In addition, the optimal concentrations of Eu³⁺ for phosphors MGd₂(MoO₄)₄ (M=Ca, Sr and Ba) have also been determined.     

Eu/Tb ions co-doped white light luminescence Y2O3 phosphors

Y₂O₃:Eu³⁺, Tb³⁺ phosphors with white emission are prepared with different doping concentration of Eu³⁺ and Tb³⁺ ions and synthesizing temperatures from 750 to 950 °C by the co-precipitation method. The resulted phosphors were characterized by X-ray diffraction (XRD) and photoluminescence (PL) spectroscopy. The results of XRD indicate that the crystallinity of the synthesized samples increases with enhancing the firing temperature. The photoluminescence spectra indicate the Eu³⁺ and Tb³⁺ co-doped Y₂O₃ phosphors show five main emission peaks: three at 590, 611 and 629 nm originate from Eu³⁺ and two at 481 and 541 nm originate from Tb³⁺, under excitation of 250-320 nm irradition. The white light luminescence color could be changed by varying the excitation wavelength. Different concentrations of Eu³⁺ and Tb³⁺ ions were induced into the Y₂O₃ lattice and the energy transfer from Tb³⁺→Eu³⁺ ions in these phosphors was found. The Commission International de l’Eclairage (CIE) chromaticity shows that the Y₂O₃:Eu³⁺, Tb³⁺ phosphors can obtain an intense white emission.     

Ionic liquid-assisted hydrothermal synthesis of dendrite-like NaY(MoO4)2:Tb phosphor

Micro-sized NaY(MoO₄)₂:Tb³⁺ phosphors with dendritic morphology was synthesized by a ionic liquid-assisted hydrothermal process. X-ray diffraction (XRD) indicated that the as-prepared product is pure tetragonal phase of NaY(MoO₄)₂. Field emission scanning electron microscopy (FE-SEM) images showed that the as-prepared NaY(MoO₄)₂:Tb³⁺ phosphors have dendritic morphology. The photoluminescent (PL) spectra displayed that the as-prepared NaY(MoO₄)₂:Tb³⁺ phosphors show a stronger green emission with main emission wavelength 545 nm corresponding to the ⁵D₄→⁷F₅ transition of Tb³⁺ ion, and the optimal Tb³⁺ doping concentration for obtaining maximum emission intensity was confirmed to be 10 mol%. Based on Van Uitert's and Dexter's models the electric dipole–dipole (D–D) interaction was confirmed to be responsible for the concentration quenching of ⁵D₄ fluorescence of Tb³⁺ in the NaY(MoO₄)₂:Tb³⁺ phosphors. The intrinsic radiative transition lifetime of ⁵D₄ level is found to be 0.703 ms.     

Green Emitting Cerium Doped CaS Whiskers Grown by Solid State Diffusion Method

Undoped and cerium doped Calcium sulfide (CaS) phosphors were synthesized using solid state diffusion method. The X-ray diffraction pattern revealed that both undoped and doped CaS crystallites have cubic structure with average crystallite size varying from 20 to 30 nm. Scanning electron micrographs indicated that Ce doped CaS phosphors were composed of whiskers with different dimensions and orientations. The optical properties of undoped and Ce doped particles were characterized using Photoluminescence (PL) and UV-Vis absorption spectroscopy. The PL emission spectrum of cerium doped CaS phosphors for an excitation wavelength 465 nm showed a main peak at 500 nm and a shoulder peak at 556 nm due to 5d?→?4f transition in Ce³⁺ ions. The variation of PL intensity with cerium concentration was investigated and the maximum PL intensity was obtained for a doping concentration of 3 wt.%. The optical band gap of the samples was estimated from the diffuse reflectance spectrum and was found to increase with increase in cerium concentration. The enhanced optical properties of these phosphors can be exploited in various optoelectronic devices including displays and bioimaging techniques.     

Photoluminescence properties of powder and pulsed laser-deposited PbS nanoparticles in SiO2

Thin films of lead sulfide (PbS) nanoparticles embedded in an amorphous silica (SiO₂) host were grown on Si(1 0 0) substrates at different temperatures by the pulsed laser deposition (PLD) technique. Surface morphology and photoluminescence (PL) properties of samples were analyzed with scanning electron microscopy (SEM) and a 458 nm Ar⁺ laser, respectively. The PL data show a blue-shift from the normal emission at ∼3200 nm in PbS bulk to ∼560-700 nm in nanoparticulate PbS powders and thin films. Furthermore, the PL emission of the films was red-shifted from that of the powders at ∼560 to ∼660 nm. The blue-shifting of the emission wavelengths from 3200 to ∼560-700 nm is attributed to quantum confinement of charge carriers in the restricted volume of nanoparticles, while the red-shift between powders and thin-film PbS nanoparticles is speculated to be due to an increase in the defect concentration. The red-shift increased slightly with an increase in deposition temperature, which suggests that there has been a relative growth in particle sizes during the PLD of the films at higher temperatures. Generally, the PL emission of the powders was more intense than that of the films, although the intensity of some of the films was improved marginally by post-deposition annealing at 400 °C. This paper compares the PL properties of powder and pulsed laser-deposited thin films of PbS nanoparticles and the effects of deposition temperatures.     

Crystal structure and photoluminescence of (Y1−xCex)2Si3O3N4

Oxonitridosilicate phosphors with compositions of (Y_1−xCe_x)₂Si₃O₃N₄ (x=0−0.2) have been synthesized by solid state reaction method. The structures and photoluminescence properties have been investigated. Ce³⁺ ions have substituted for Y³⁺ ions in the lattice. The emission and excitation spectra of these phosphors show the characteristic photoluminescence spectra of Ce³⁺ ions. Based on the analyses of the diffuse reflection spectra and the PL spectra, a systematic energy diagram of Ce³⁺ ion in the forbidden band of sample with x=0.02 is given. The best doping Ce content in these phosphors is ∼2 mol%. The quenching temperature is ∼405 K for the 2 mol% Ce content sample. The luminescence decay properties were investigated. The primary studies indicate that these phosphors are potential candidates for application in three-phosphor-converted white LEDs.     

Luminescence of KCaSO4Cl:X, Y (X=Eu or Ce; Y=Dy or Mn) halosulfate material

Polycrystalline KCaSO₄Cl:Eu, Dy, KCaSO₄Cl:Ce, Dy and KCaSO₄Cl:Ce, Mn phosphors prepared by a solid state diffusion method have been studied for its photoluminescence (PL) characteristics. The presence of two overlapping bands at around 400 and 450 nm in the PL emission spectra of the phosphor suggests the presence of Eu²⁺ in the host compound occupying two different lattice sites. The effects of co-doping on the photoluminescence (PL) characteristics of KCaSO₄Cl:Eu or Ce phosphors have been studied. The decrease in peak intensity of the phosphor on co-doping it with Dy gives an insight into the emission mechanism of the phosphors, which involves energy transfer from Eu²⁺→Dy³⁺, Ce³⁺→Dy³⁺ and Ce³⁺→Mn²⁺.