The slow component of quartz optically stimulated luminescence

The slow component of quartz OSL displays a number of properties that clearly distinguish it from the main (‘rapidly bleachable’) part of the quartz OSL signal traditionally used for dating. These properties include an extremely high thermal stability, dose saturation level and a charge concentration dependence in both signal form and decay rate. The physical mechanism responsible for the slow component is thought at present to involve a direct donor–acceptor recombination component, possibly associated with competing pathways below, and possibly up to, the conduction band. The thermal stability and high dose saturation characteristics of the slow component suggest much potential for long-range dating exists although at present it is uncertain whether difficulties associated with partial resetting may preclude routine use of the slow component for dating sedimentary deposits. A single-aliquot additive dose method was however used to obtain an estimate of D_e from the slow component for an Egyptian quartz sample that was in broad agreement with previous estimates based on the standard multiple-aliquot additive dose method.The slow component is often small in magnitude compared to the initial portion of the quartz OSL decay. However, this is not always the case and for some samples significant inaccuracies in D_e estimation may occur when deriving ages from the initial ‘rapidly bleaching’ portion of the OSL decay if the effect of the slow component is ignored or taken to be constant.     

Modelling the thermal quenching mechanism in quartz based on time-resolved optically stimulated luminescence

This paper presents a new numerical model for thermal quenching in quartz, based on the previously suggested Mott-Seitz mechanism. In the model electrons from a dosimetric trap are raised by optical or thermal stimulation into the conduction band, followed by an electronic transition from the conduction band into an excited state of the recombination center. Subsequently electrons in this excited state undergo either a direct radiative transition into a recombination center, or a competing thermally assisted non-radiative process into the ground state of the recombination center. As the temperature of the sample is increased, more electrons are removed from the excited state via the non-radiative pathway. This reduction in the number of available electrons leads to both a decrease of the intensity of the luminescence signal and to a simultaneous decrease of the luminescence lifetime. Several simulations are carried out of time-resolved optically stimulated luminescence (TR-OSL) experiments, in which the temperature dependence of luminescence lifetimes in quartz is studied as a function of the stimulation temperature. Good quantitative agreement is found between the simulation results and new experimental data obtained using a single-aliquot procedure on a sedimentary quartz sample.     

Improving the accuracy and precision of equivalent doses determined using the optically stimulated luminescence signal from single grains of quartz

Optically stimulated luminescence (OSL) measurements of quartz are widely used to measure equivalent dose (D_e). At radiation doses above ～100 Gy, saturation of traps results in a decrease in the rate of growth of the OSL signal, and this makes calculation of D_e increasingly difficult. A series of dose recovery experiments was undertaken using single grains of quartz from Kalambo Falls, Zambia to explore saturation of single grains. When the OSL signal from many grains is averaged, the characteristic dose (D₀) is 47 Gy, typical of published values for quartz. However, D₀ for individual grains varies from ～10 to 100 Gy. Doses up to two times the average D₀ could be accurately recovered, but above this dose the D_e became increasingly underestimated. Overdispersion for this type of experiment should be zero, but was observed in all data sets; furthermore the value of overdispersion increased with D_e. An additional acceptance criterion, the Fast Ratio, is suggested for single grain OSL analysis. This criterion assesses the relative contribution of the fast component of the OSL signal. Including this as an additional acceptance criterion leads to an improved precision, with overdispersion reduced to zero, and improved accuracy in dose recovery at high doses.     

Tunneling recombination luminescence under excitation of PbWO4:Mo crystals in the defect-related absorption region

Time-resolved emission and excitation spectra and luminescence decay kinetics were studied at 150-300 K for the green emission of PbWO₄:Mo crystals. It was found that the slow (μs-ms) decay component observed under excitation in the defect-related absorption region (around 3.8-3.9 eV) arises from the G(II) emission which appears at the tunneling recombination of optically created electron and hole centers. The study of the emission decay kinetics at different temperatures and excitation intensities allowed concluding that both the monomolecular and the bimolecular tunneling recombination process can be stimulated in the mentioned energy range. The monomolecular process takes place in the isolated spatially correlated pairs of electron and hole centers produced without release of electrons into the conduction band. The bimolecular process takes place in the pairs of randomly distributed centers created at the trapping of free electrons from the conduction band. The formation of electron centers under irradiation in the defect-related absorption region was investigated by the electron spin resonance (ESR) and thermally stimulated luminescence (TSL) methods. The possibility of various photo-thermally stimulated defects creation processes, which take place with and without release of free electrons into the conduction band, was confirmed.     

Estimating the parameters of traps in quartz by the variable energy of stimulation optically stimulated luminescence (VES-OSL) method

Optical-cross section that is a trap parameter estimated from the measurements of optically stimulated luminescence (OSL) is not a uniquely determined physical quantity. It depends not only on temperature and the energy of stimulation light but also, in the simplest case, on the optical depth of trap, the frequency of vibration mode and on the Huang-Rhys factor, i.e. the average number of phonons involved in the process of optical excitation of electrons from trap to conduction band. Conventional OSL measurement techniques do not enable to determine directly these parameters but they could be estimated by applying the variable energy of stimulation optically stimulated luminescence (VES-OSL) method. Recently it was put in to practice and the first VES-OSL curves were presented. In this study the outcomes of VES-OSL experiments are presented together with the first attempt of direct estimating the optical depth of traps active in OSL process in quartz.     

Effect of various alkaline-earth metal oxides on the broadband infrared luminescence from bismuth-doped silicate glasses

We report on the effect of various alkaline-earth metal oxides on the broadband infrared luminescence covering 1000-1600 nm wavelength region from bismuth-doped silicate glasses. The full width at half maximum (FWHM) of the infrared luminescence and the fluorescent lifetime is more than 200 nm and 400 μs, respectively. The fluorescent intensity decreases with increasing basicity of host glasses. Besides the broadband infrared luminescence, luminescence centered at 640 nm was also observed, which should be ascribed to Bi²⁺ rather than to the familiar Bi³⁺. We suggest that the infrared luminescence should be assigned to the transition of BiO molecules dispersed in the host glasses.     

Femtosecond optical second harmonic generation by metal clusters: The influence of inhomogeneous line broadening on the dephasing time of surface plasmon excitation

Received: 4 December 1998     

The response of thermally and optically stimulated luminescence from Al2O3:C to high-energy heavy charged particles

The thermoluminescence (TL) and optically stimulated luminescence (OSL) response of Al₂O₃ dosimeters to high-energy heavy charged particles (HCP) has been studied using the heavy ion medical accelarator at Chiba, Japan. The samples were Al₂O₃ single-crystal chips, of the type usually known as TLD-500, and Luxel^TM dosimeters (Al₂O₃:C powder in plastic) from Landauer Inc. The samples were exposed to ⁴He (150 MeV/u), ¹²C (400 MeV/u), ²⁸Si (490 MeV/u) and ⁵⁶Fe (500 MeV/u) ions, with linear energy transfer values covering the range from 2.26 to 189 keV/μm in water and doses from 1 to 100 mGy (to water). A ⁹⁰Sr/⁹⁰Y beta source, calibrated against a ⁶⁰Co secondary standard, was used for calibration purposes. For OSL, we used both continuous-wave OSL measurements (CW-OSL, using green light stimulation at 525 nm) and pulsed OSL measurements (POSL, using 532 nm stimulation from a Nd:YAG Q-switched laser). The efficiencies (η_HCP,γ) of the different HCPs at producing OSL or TL were observed to depend not only upon the linear energy transfer (LET) of the HCP, but also upon the sample type (single crystal chip or Luxel^TM) and the luminescence method used to define the signal—i.e. TL, CW-OSL initial intensity, CW-OSL total area, or POSL. Observed changes in shape of the decay curve lead to potential methods for extracting LET information of unknown radiation fields. A discussion of the results is given, including the potential use of OSL from Al₂O₃ in the areas of space radiation dosimetry and radiation oncology.     

Influence of ordering change on the optical and thermal properties of inflation polyethylene films

Changes of thermal diffusivity inside femtosecond laser-structured volumes as small as few percent were reliably determined (with standard deviation less than 1%) with miniaturized sensors. An increase of thermal diffusivity of a crystalline high-density polyethylene (HDPE) inflation films by 10-20% from the measured (1.16 ± 0.01) × 10⁻⁷ m² s⁻¹ value in regions not structured by femtosecond laser pulses is considerably larger than that of non-crystalline polymers, 0-3%. The origin of the change of thermal diffusivity are interplay between the laser induced disordering, voids’ formation, compaction, and changes in molecular orientation. It is shown that laser structuring can be used to modify thermal and optical properties. The birefringence and infrared spectroscopy with thermal imaging of CH₂ vibrations are confirming inter-relation between structural, optical, and thermal properties of the laser-structured crystalline HDPE inflation films. Birefringence modulation as high as Δn ∼ ± 1 × 10⁻³ is achieved with grating structures.     

The study on optically stimulated luminescence dosimeter based on the SrS：Eu,Sm and CaS：Eu,Sm

With the increasing use of nuclear energy, there is a need for a wider range of efficient dosimeters for radiation detection and assessment. There has been a tremendous growth in the development of radiation detectors and devices in the past few decades. In recent years, the development of new materials for radiation dosimetry has progressed significantly. Alkaline earth sulfides （AES） have been known for a long time as excellent and versatile phosphor materials. In the present investigation, a number of phosphor samples such as mono-, binary and ternary sulfides of alkaline earths （II^a-VI^b） have been prepared and their TL properties have been studied with respect to exposure （x-ray） response and fading. In this paper, some results on SrS：Eu, Sm and CaS：Eu, Sm phosphors are presented. A type of novel OSL dosimeter is described. The dosimeter takes advantage of the characteristics of charge trapping materials SrS：Eu, Sm and CaS：Eu, Sm that exhibit optically stimulated luminescence （OSL）. The measuring range of the dosimeter is from 0.01 to 1000 Gy. The OSL dosimeters provide capability for remote monitoring radiation locations which are difficult to access and hazardous. This equipment is relatively simple, small in size and has low power consumption. The device is suitable for space radiation dose exploration. In addition, it also can be used in IC and other radiation occasions and has good prospects.     

液芯光纤中溶液吸收和荧光的性质对CS2受激拉曼散射阈值的影响

利用液芯光纤技术研究了不同浓度的β-Carotene的CS2溶液的吸收与荧光的特性对CS2的一、二阶Stokes谱线阈值的影响.实验发现随溶液浓度(10-8-10-6 mol/L)增加,CS2的一阶Stokes谱线的激发阈值相对变高;并且与纯CCS2芯液的受激拉曼散射相比较,在低抽运能量激发下,就观察到CS2的二阶Stokes谱线.这主要是由于在CS2的受激拉曼谱线产生的过程中,β-Carotene的CS2溶液的吸收和荧光共同影响了CS2的一、二阶Stokes谱线的阈值.我们进行了理论上的拟合与分析,其结果与实验符合很好.     

Influence of size effect and sputtering conditions on the crystallinity and optical properties of ZnO thin films

The effects of the thickness variation, substrate type and annealing on the crystallinity parameters, luminescent and optical properties of the zinc oxide (ZnO) thin films were reported. The thin films were deposited on the glass and the amorphous quartz substrates by the standard RF-magnetron sputtering method using ZnO targets in the argon atmosphere. It has been found that the films deposited on the glass substrate manifest a clear size effect. Both the structural and the optical parameters show clearly minima on their thickness dependences. It has been shown that annealing of the comparatively thick ZnO films leads to increase of the crystallite sizes that are followed by a considerable rise of the cathodoluminescence intensity. The corresponding model of the crystallite growth is proposed.     

The influence of substrate temperature and annealing on the properties of pulsed laser-deposited YIG films on fused quartz substrate

Yttrium iron garnet (YIG) thin films were deposited on fused quartz substrate at different substrate temperatures (T_s) varying from room temperature (RT) to 850 °C using pulsed laser deposition (PLD) technique. All the films in the as-deposited state were X-ray amorphous and non-magnetic at RT. The film deposited at RT after annealing at temperatures T_a?700 °C showed both X-ray peaks and the magnetic order. The films deposited at higher T_s (500–850 °C) and then annealed at 700 °C resulted in better-quality films with higher 4πM_s value. The highest value of magnetization was for the sample deposited at 850 °C and annealed at 700 °C, which is 68% of the bulk 4πM_s value.     

Photo-magneto-electric effect in semi-insulating GaAs: carrier lifetimes and influence of the defect structure

We report the investigation of the Photo-Magneto-Electric effect (PME) in semi-insulating Liquid-Encapsulated (LEC-) grown GaAs crystals, using both intrinsic and impurity excitation. The role of the majority and minority carriers on the conductivity phenomena was evaluated and the lifetimes of electrons and holes were determined depending on excitation conditions. Anomalously high PME voltages, reaching in some cases some volts, were measured, which demonstrate a sharp drop in the temperature region 320–360K. The observed changes are discussed supposing that the influence of the non-homogeneous defect structure of the samples is essential.     

The response of thermally and optically stimulated luminescence from Al2O3:C to high-energy heavy charged particles

The thermoluminescence (TL) and optically stimulated luminescence (OSL) response of Al₂O₃ dosimeters to high-energy heavy charged particles (HCP) has been studied using the heavy ion medical accelarator at Chiba, Japan. The samples were Al₂O₃ single-crystal chips, of the type usually known as TLD-500, and Luxel^TM dosimeters (Al₂O₃:C powder in plastic) from Landauer Inc. The samples were exposed to ⁴He (150 MeV/u), ¹²C (400 MeV/u), ²⁸Si (490 MeV/u) and ⁵⁶Fe (500 MeV/u) ions, with linear energy transfer values covering the range from 2.26 to 189 keV/μm in water and doses from 1 to 100 mGy (to water). A ⁹⁰Sr/⁹⁰Y beta source, calibrated against a ⁶⁰Co secondary standard, was used for calibration purposes. For OSL, we used both continuous-wave OSL measurements (CW-OSL, using green light stimulation at 525 nm) and pulsed OSL measurements (POSL, using 532 nm stimulation from a Nd:YAG Q-switched laser). The efficiencies (η_HCP,γ) of the different HCPs at producing OSL or TL were observed to depend not only upon the linear energy transfer (LET) of the HCP, but also upon the sample type (single crystal chip or Luxel^TM) and the luminescence method used to define the signal—i.e. TL, CW-OSL initial intensity, CW-OSL total area, or POSL. Observed changes in shape of the decay curve lead to potential methods for extracting LET information of unknown radiation fields. A discussion of the results is given, including the potential use of OSL from Al₂O₃ in the areas of space radiation dosimetry and radiation oncology.     

液芯光纤中溶液吸收和荧光的性质对CS2受激拉曼散射阈值的影响

利用液芯光纤技术研究了不同浓度的β-Carotene的CS₂溶液的吸收与荧光的特性对CS₂的一、二阶Stokes谱线阈值的影响.实验发现随溶液浓度(10^-8—10^-6 mol/L)增加，CS₂的一阶Stokes谱线的激发阈值相对变高；并且与纯CS₂芯液的受激拉曼散射相比较，在低抽运能量激发下，就观察到CS₂的二阶Stokes谱线.这主要是由于在CS₂的受激拉曼谱线产生的过程中，β-Carotene的CS₂溶液的吸收和荧光共同影响了CS₂的一、二阶Stokes谱线的阈值.我们进行了理论上的拟合与分析，其结果与实验符合很好. 关键词： 2受激拉曼散射阈值')" href="#">CS₂受激拉曼散射阈值 液芯光纤 吸收与荧光     

Effects of 60Co gamma-ray irradiation on the optical properties of natural and synthetic quartz from 85 to 300 K

Optical absorption and luminescence measurements have been made between 85 and 300 K on natural and synthetic quartz during and after ⁶⁰Co gamma-ray irradiation. Absorption vs. dose curves can be resolved into the sum of a saturating exponential and a linear component. At 85 K the slope of the linear component is small, while at 300 K the linear term dominates the growth curves. The coloring induced by irradiation at 85 K decreased in a complex manner during anneal at a linear rate to 300 K. During this annealing process multiple-peak thermoluminescent (TL) glow curves were observed and recorded. The TL emission spectra are described accurately by single Gaussian-shaped bands, whereas the gamma-ray induced luminescence is comprised of several poorly resolved bands. All recorded TL glow curves are characterized by a set of four first order glow peaks between 150 and 220 K. The temperature dependence of radioluminescence intensity is described by a classical model in which a temperature-independent radiative transition competes with a thermally activated non-radiative process.     

The influence of ligands on the preparation and optical properties of water-soluble CdTe quantum dots

In a systematic investigation has been found that ligands play an important role in both the water-phase preparation and optical properties of CdTe quantum dots. Experiments were performed using three typical thioalkyl acids as ligands, namely mercaptoacetic acid (MAA), l-cysteine (Cys) and reduced glutathione (GSH). The growth rate and size-distribution of CdTe quantum dots (QDs) are shown to depend on the type of ligands. A proper choice of ligand enables to make lager nanocrystals with narrower size-distribution. The effects of pH (buffer solution), illumination, heating and cations on the spectroscopic properties of CdTe QDs for the three ligands are reported. In addition, three same-size CdTe QDs were individually characterized by micellar electrokinetic capillary electrophoresis with laser-induced fluorescent detection, which proved their monodisperse size-distribution and different electric charge distribution on the surface for each of the three different type of QDs.     

The influence of cation additives on the NIR luminescence intensity of Er3+-doped borate glasses

Er3+-doped 25BaO-(25-x)SiO2-xAl2O3-25B2O3 transparent glasses are prepared with x = 0,12.5 and 25 by a solid-state reaction.The Er-related NIR luminescence intensity,which corresponds to the transition of 4I15/2-4I13/2,is obviously altered with different silicon/aluminum ratios.The Judd-Ofelt parameters of the Er3+ ions are adopted to explain the intensity change in the NIR fluorescence,and the Raman scattering intensity versus the amount of Al and/or Si components are discussed.The spectra of the three samples are quite similar in the peak positions,but different in intensity.The maximal phonon density of state for the samples is calculated from the Raman spectra and is correlated to the NIR luminescence efficiency.