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1.
A novel europium(III) complex, tris(dibenzoylmethanate){1-[9-hexyl-9H-carbazole]-2-(2-pyridyl)-benzimidazole}europium(III) [Eu(DBM)3(CAR-PyBM)] functionalized by a carbozole fragment, was synthesized and used as emitting material in organic electroluminescent (EL) devices. Compared with the device based on an unfunctional Eu(III) complex, [Eu(DBM)3HPyBM] (HPyBM=2-(2-pyridyl)benzimidazole), the EL performances of the device using [Eu(DBM)3(CAR-PyBM)] as an emitter was significantly enhanced due to the improvement of hole-transporting ability. The maximum efficiency and luminance of red emission achieved from the device with the configuration of ITO/N,N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4′diamine (TPD, 50 nm)/ [Eu(DBM)3(CAR-PyBM)] (30 nm)/1,3,5-tirs-(N-phenylbenzimidazol-2-yl)benzene (TPBI, 20 nm)/LiF (1.5 nm)/Al were 4.2 cd/A and 200 cd/m2, respectively.  相似文献   

2.
A new compound with intramolecular charge transfer (ICT) property—5,6-Bis-[4-(naphthalene-1-yl-phenyl-amino)-phenyl]-pyrazine-2,3-dicarbonitrile(BNPPDC) was synthesized. The new compound was strongly fluorescent in non-polar and moderately polar solvents, as well as in thin solid film. The absorption and emission maxima shifted to longer wavelength with increasing solvent polarity. The fluorescence quantum yield also increased with increasing solvent polarity from non-polar to moderately polar solvents, then decreased with further increase of solvent polarity. This indicates both “positive” and “negative” solvatokinetic effects co-existed. Using this material as hole-transporting emitter and host emitter, we fabricated two electroluminescent (EL) devices with structures of A (ITO/BNPPDC (45 nm)/1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBI) (45 nm)/Mg:Ag (200 nm) and B (ITO/N,N′-diphenyl-N,N′-bis-(3-methylphenyl) (1,1′-diphenyl)4,4′-diamine (TPD) (50 nm)/BNPPDC (20 nm)/1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene (TPBI) (45 nm)/Mg:Ag (200 nm). The devices showed green-yellow EL emission with good efficiency and high brightness. For example, the device A exhibited a high brightness of 17400 cd/m2 at a driving voltage of 11 V and a very low turn-on voltage (2.9 V), as well as a maximum luminous efficiency 3.61 cd/A. The device B showed a similar performance with a high brightness of 12650 cd/m2 at a driving voltage of 13 V and a maximum luminous efficiency 3.62 cd/A. In addition, the EL devices using BNPPDC as a host and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) as a dopant (configuration: ITO/TPD (60 nm)/BNPPDC:DCJTB (2%) (30 nm)/TPBI (35 nm)/Mg:Ag (200 nm)) showed a good performance with a brightness of 150 cd/m2 at 4.5 V, a maximum brightness of 12600 cd/m2 at 11.5 V, and a maximum luminous efficiency of 3.30 cd/A.  相似文献   

3.
We report the synthesis of pyrene derivatives as the light emissive layer for highly efficient organic electroluminescence (EL) diodes. Multilayer devices were fabricated with pyrene derivatives (ITO/NPB (50 nm)/blue material (30 nm)/BCP (10 nm)/Alq3 (30 nm)/LiF (1 nm)/Al). By using 1,1′-dipyrene (DP) and 1,4-dipyrenyl benzene (DPB), the devices produced the blue EL emissions with 1931 Commission International de L’Eclairage coordinates of (x=0.21, y=0.35) and (x=0.19, y=0.25), respectively. The device with DPB shows a maximum brightness of 42,445 cd/m2 at 400 mA/cm2 and the luminance efficiency of 8.57 cd/A and 5.18 lm/W at 20 mA/cm2.  相似文献   

4.
A very stable and blue luminescent complex Zn(bbp)Cl2 (bbp: 2,6-bis(benzimidazolyl)pyridine) was synthesized. X-ray crystal structural analysis for the complex revealed that there are intermolecular π?π interactions in the solid state. The fluorescence properties for this complex were studied. The similar devices with the structure of [ITO/CuPc(31 nm)/NPB(80 nm)/[Zn(bbp)Cl2] (or L) (85 nm)/LiF15/Al] were constructed to investigate their electroluminescent performance. Both the complex and the ligand can be fabricated as blue-emitting materials. The complex shows emission peak at 555 nm, electroluminescent efficiency 0.017 cd A−1 and turn-on voltage 7 V, compared to 470 nm, 0.036 cd A−1 and 9 V for the ligand.  相似文献   

5.
A series of rare earth ternary compounds of Tb1−xEux(TTA)3Dipy (HTTA=thenoyltrifluoroacetone, Dipy=2,2′-dipyridyl) have been synthesized, and the characteristics of the compounds have been performed by DTA-TG, IR, UV and fluorescence spectroscopy. Photoluminescence measurements indicated that the complexes of Eu(III) emit strong red luminescence under UV radiation. IR spectra suggest that complexes have been successfully synthesized, and TG curves indicate that the complexes are stable up to a temperature of about 220 °C. The Eu complex was blended with poly(N-vinylcarbazole) (PVK) and spin coated into films, and electroluminescence devices with the structure of Indium Tin Oxide (ITO)/PVK:Tb1−xEux(TTA)3Dipy/BCP(2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline)/aluminum quinoline (AlQ)/Al were fabricated, the luminescence of Eu3+ complexes enhances after doping with Tb3+. Therefore, it may be an effective method to improve the EL intensity of the lanthanide complex.  相似文献   

6.
An efficient cathode NaCl/Ca/Al used to improve the performance of organic light-emitting devices (OLEDs) was reported. Standard N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′ biphenyl 4,4′-dimaine (NPB)/tris-(8-hydroxyquinoline) aluminum (Alq3) devices with NaCl/Ca/Al cathode showed dramatically enhanced electroluminescent (EL) efficiency. A power efficiency of 4.6 lm/W was obtained for OLEDs with 2 nm of NaCl and 10 nm of Ca, which is much higher than 2.0 lm/W, 3.1 lm/W, 2.1 lm/W and 3.6 lm/W in devices using, respectively, the LiF (1 nm)/Al, LiF (1 nm)/Ca (10 nm)/Al, Ca (10 nm)/Al and NaCl (2 nm)/Al cathodes. The investigation of the electron injection in electron-only devices indicates that the utilization of the NaCl/Ca/Al cathode substantially enhances the electron injection current, which in case of OLEDs leads to the improvement of the brightness and efficiency.  相似文献   

7.
Schiff bases N,N′-o-phenylenebis (salicylideneimine) (H2L1), N,N′-p-phenylenebis (salicylideneimine) (H2L2) and their corresponding boron complexes (BF2)2L1, (BF2)2L2 were synthesized, respectively. The two boron complexes have been characterized by 1H NMR, mass spectrometry and elemental analysis, while the luminescent properties of them were investigated with UV-VIS spectroscopy and photoluminescence spectroscopy. Then the three-layer devices [ITO/NPB (60 nm)/(BF2)2L1 (50 nm)/Alq3 (20 nm)/LiF (1 nm)/Al (200 nm)] (device I) and [ITO/NPB (60 nm)/(BF2)2L2 (50 nm)/Alq3 (20 nm)/LiF (1 nm)/Al (200 nm)] (device II) were fabricated by vacuum deposition. These two devices both exhibited blue green emission at 500 nm, but showed different luminances and efficiencies.  相似文献   

8.
Stable white electroluminescence (EL) has been achieved from organic LED, in which an ultrathin 4-(dicyanomethylene)-2-methyl-6-(p-dimethyl-aminostyryl)-4H-pyran (DCM) dye layer has been inserted in between two 2-methyl-8-hydroxyquinolinolatolithium [LiMeq] emitter layer and by optimizing the position of the DCM dye layer from the α-NPD/LiMeq interface. Electroluminescence spectra, current-voltage-luminescence (I-V-L) characteristics of the devices have been studied by changing the position of the dye layer. As the distance of DCM layer from α-NPD/LiMeq interface is increased, the intensity of host emission enhances rapidly. Introduction of thin layer of DCM in emissive layer increases the turn on voltage. The best Commission International de L’ Eclairage (CIE) coordinates i.e. (0.32, 0.33) were obtained with device structure ITO/α-NPD(30 nm) /LiMeq(10 nm)/DCM(1 nm)/LiMeq(25 nm)/BCP(6 nm)/Alq3(28 nm)/LiF(1 nm)/Al(100 nm). The EL spectrum covers the whole visible spectra range 400-700 nm. The color rendering index (CRI) for our best white light (Device 4) is 47.4. The device shows very good color stability in terms of CIE coordinates with voltages. The maximum luminescence 1240 cd/m−2 has been achieved at 19 V.  相似文献   

9.
Efficient white organic light-emitting diodes (WOLEDs) are fabricated with a thin layer of 9,10-bis (2-naphthyl) anthracene (ADN) doped with Rubrene as the source of white emission. A device with the structure of ITO/NPB (70 nm)/ADN: 0.5% Rubrene (30 nm)/Alq3 (50 nm)/MgAg shows a maximum current efficiency of 3.7 cd/A, with the CIE coordinates of x=0.33, y=0.43. The EL spectrum of the devices and the CIE coordinates remains almost the same when the voltage is increased from 10 to 15 V and the current efficiency remains quite stable with the current density increased from 20 to 250 mA/cm2.  相似文献   

10.
A Cu(I) complex, [Cu(Dppp)(DPEphos)]BF4 (Dppp=2,3-diphenyl-pyrazino[2,3-f][1,10]phenanthroline, DPEphos=Bis[2-(diphenylphosphino)phenyl]ether), is synthesized and used as the dopant in bright electrophosphorescent devices with the general structure ITO/m-MTDATA (30 nm)/NPB (20 nm)/CBP: ×wt% [Cu(Dppp)(DPEphos)]BF4 (30 nm)/Bphen (20 nm)/Alq3 (20 nm)/LiF (0.8 nm)/ Al (200 nm). These devices exhibit a maximum brightness of 4483 cd/m2 and a peak efficiency of 3.4 cd/A. Compared with previously reported similar devices based on Cu(I) complexes, the brightness of the devices presented in this article is the best. Meanwhile, 2% [Cu(Dppp)(DPEphos)]BF4-based devices exhibit white light-emitting properties with CIE coordinates of (0.32. 0.35) at 10 V.  相似文献   

11.
Tunable coherent VUV radiation from 115.8 to 116.9 nm has been produced by non-linear four-wave sum frequency mixing in a xenon-argon mixture. 116.5 nm light generated by this means has been used as the first step in a three color, doubly resonant ionization scheme for Kr. In the process of validating the system the xenon refractive index per atom (STP) at 116.5 nm has been determined to be (n(Xe) − 1)/NXe = −6.8(±0.8) × 10−23 cm3.  相似文献   

12.
Blue organic light-emitting devices based on wide bandgap host material, 2-(t-butyl)-9, 10-di-(2-naphthyl) anthracene (TBADN), blue fluorescent styrylamine dopant, p-bis(p-N,N-diphenyl-amino-styryl)benzene (DSA-Ph) have been realized by using molybdenum oxide (MoO3) as a buffer layer and 4,7-diphenyl-1,10-phenanthroline (BPhen) as the ETL. The typical device structure used was glass substrate/ITO/MoO3 (5 nm)/NPB (30 nm)/[TBADN: DSA-Ph (3 wt%)](35 nm)/BPhen (12 nm)/LiF (0.8 nm)/Al (100 nm). It was found that the MoO3∥BPhen-based device shows the lowest driving voltage and highest power efficiency among the referenced devices. At the current density of 20 mA/cm2, its driving voltage and power efficiency are 5.4 V and 4.7 Lm/W, respectively, which is independently reduced 46%, and improved 74% compared with those the m-MTDATA∥Alq3 is based on, respectively. The J-V curves of ‘hole-only’ devices reveal that a small hole injection barrier between MoO3∥NPB leads to a strong hole injection, resulting low driving voltage and high power efficiency. The results strongly indicate that carrier injection ability and balance shows a key significance in OLED performance.  相似文献   

13.
The efficiencies of red organic light-emitting diode (OLED) using tris-(8-hydroxy-quinoline)aluminum (Alq3) as host and 4-(dicyanomethylene)-2-t-butyl-6-(1,1,7,7-tetramethyljulolidyl-9-enyl)-4H-pyran (DCJTB) as dopant were greatly increased by adding a small amount (0.3 wt%) of Ir compound, iridium(III) bis(3-(2-benzothiazolyl)-7-(diethylamino)-2H-1-benzopyran-2-onato-N′,C4) (acetyl acetonate) (Ir(C6)2(acac)), as a sensitizer. The device has a sandwiched structure of indium tin oxide (ITO)/4,4′,4″-tris(N-(2-naphthyl)-N-phenyl-amino)triphenylamine (T-NATA) (40 nm)/N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl-4,4′ diamine (NPB) (40 nm)/Alq3:DCJTB (0.7 wt%):Ir(C6)2(acac) (0.3 wt%) (40 nm)/Alq3 (40 nm)/LiF (1 nm)/Al (120 nm). It can be seen that the current efficiencies of this device remained almost (13.8±1) cd/A from 0.1 to 20,000 cd/m2 and the Commission International d’Eclairage (CIE) coordinates at (0.60, 0.37) in the range of wide brightness. The significant improvement was attributed to the sensitization effect of the doped Ir(C6)2(acac), thus the energy of singlet and triplet excitons is simultaneously transferred to the DCJTB.  相似文献   

14.
With a blue distyrylarylene derivative, 4,4′-bis(2,2-di(2-methoxyphenyl)ethenyl)-1,1′-biphenyl (CBS) as emitting material, double-layer and triple-layer electroluminescent (EL) devices were fabricated. For the device using tris-(1-phenyl-3-methyl-4-isobutyryl-5-pyrozolone)-bis(triphenyl phosphine oxide) terbium (Tb(PMIP)3(TPPO)2) as the electron-transporting layer, blue EL emission with a maximum luminance of 253 cd/m2 was achieved at 19 V. The difference of Tb(PMIP)3(TPPO)2 and tris(8-hydroxyquinolinate)aluminum (AlQ) as the electron-transporting materials in these devices were compared and discussed.  相似文献   

15.
This study presents a new design that uses a combination of a graded hole transport layer (GH) structure and a gradually doped emissive layer (GE) structure as a double graded (DG) structure to improve the electrical and optical performance of white organic light-emitting diodes (WOLEDs). The proposed structure is ITO/m-MTDATA (15 nm)/NPB (15 nm)/NPB: 25% BAlq (15 nm)/NPB: 50% BAlq (15 nm)/BAlq: 0.5% Rubrene (10 nm)/BAlq: 1% Rubrene (10 nm)/BAlq: 1.5% Rubrene (10 nm)/Alq3 (20 nm)/LiF (0.5 nm)/Al (200 nm). (m-MTDATA: 4,4′,4″ -tris(3-methylphenylphenylamino)triphenylamine; NPB: N,N′-diphenyl-N,N′-bis(1-naphthyl-phenyl)-(1,1′-biphenyl)-4,4′-diamine; BAlq: aluminum (III) bis(2-methyl-8-quinolinato) 4-phenylphenolate; Rubrene: 5,6,11,12-tetraphenylnaphthacene; Alq3: tris-(8-hydroxyquinoline) aluminum). By using this structure, the best performance of the WOLED is obtained at a luminous efficiency at 11.8 cd/A and the turn-on voltage of 100 cd/m2 at 4.6 V. The DG structure can eliminate the discrete interface, and degrade surplus holes, the electron-hole pairs are efficiently injected and balanced recombination in the emissive layer, thus the spectra are unchanged under various drive currents and quenching effects can be significantly suppressed. Those advantages can enhance efficiency and are immune to drive current density variations.  相似文献   

16.
A p-ZnO:N/n-GaN:Si structure heterojunction light-emitting diode (LED) is fabricated on c-plane sapphire by full metal organic chemical vapor deposition (MOCVD) technique. The p-type layer with hole concentration of 8.94×1016 cm−3 is composed of nitrogen-doped ZnO using NH3 as the doping source with subsequent annealing in N2O plasma ambient. Silicon-doped GaN film with electron concentration of 1.15×1018 cm−3 is used as the n-type layer. Desirable rectifying behavior is observed from the current-voltage (I-V) curve of the device. The forward turn on voltage is about 4 V and the reverse breakdown voltage is more than 7 V. A distinct ultraviolet (UV) electroluminescence (EL) with a dominant emission peak centered at 390 nm is detected at room temperature from the heterojunction structure under forward bias conditions. The origins of the EL emissions are discussed in comparison with the photoluminescence (PL) spectra.  相似文献   

17.
A white light-emitting device has been fabricated with a structure of ITO/m-MTDATA (45 nm)/NPB (10 nm)/DPVBi (8 nm)/DPVBi:DCJTB 0.5% (15 nm)/BPhen (x nm)/Alq3 [(55−x) nm]/LiF (1 nm)/Al, with x=0, 4, and 7. BPhen was used as the hole-blocking layer. This results in a mixture of lights from DPVBi molecules (blue-light) and DCJTB (yellow-light) molecules, producing white light emission. The chromaticity can be readily adjusted by only varying the thickness of the BPhen layer. The CIE coordinates of the device are largely insensitive to the driving voltages. When the thickness of BPhen is 7 nm, the device exhibits peak efficiency of 6.87 cd/A (3.59 lm/W) at the applied voltage of 6 V, the maximum external quantum efficiency ηext=2.07% corresponding to 6.18 cd/A, and the maximum brightness is 18494 cd/m2 at 15 V.  相似文献   

18.
A novel europium complex Eu(TTA)3(CPPO)2 (1) (TTA=thenoyltrifluoroacetone, CPPO=9-[4-(diphenyl-phosphinoyl)-phenyl]-9H-carbazole) based on the phosphine oxide ligand with bipolar structure was used to fabricate double-layer devices. The strong hole injection and transport ability of 1 was proved. The luminance of 414 cd m−2 was achieved with the device configuration ITO/Eu(TTA)3(CPPO)2(40 nm)/BCP (30 nm)/Mg:Ag (BCP = 2, 9-dimethyl-4, 7-diphenyl-1, 10-phenanthroline), which is favorable among double-layer organic light emitting devices based on small molecular Eu3+ complexes. The maximum current efficiency of 2.44 cd A−1 and external quantum efficiency of 1.55% demonstrate the potential application of 1 as a promising candidate for high-efficiency, simple-structure and pure red-emitting devices.  相似文献   

19.
Organic device with structure of indium tin oxide (ITO)/1,3,5-tris-(3-methylphenylphenylamino)triphenylamine (m-MTDATA)/2-tert-butyl-9,10-di-beta-naphthylanthracene (TBADN)/2,9-dimethyl-4,7-diphenyl-1,10-phenan-throline (BCP)/LiF/Al, was fabricated, which show high efficient white electroluminescence (EL) or photovoltaic (PV) properties when it was driven by direct current (DC) bias or illuminated by ultraviolet (UV) light. Under a DC bias, the device shows efficient white EL emission. A maximum luminous efficiency of 1.1 lm/W was obtained at 8 V, which corresponds the Commission International de L’Eclairage coordinates (CIE) of (x = 0.298, y = 0.365). When the bias was increased to 12 V, the device shows bright white emission with the maximum brightness of 4300 cd/m2, corresponding CIE coordinates of (x = 0.262, y = 0.280). When the diode was irradiated by a 365 nm UV-light (4 mW/cm2), the open-circuit voltage (Voc) of 1.2 V, short-circuit (Isc) of 0.065 mA/cm2, fill factor (FF) of 0.24 and power conversion efficiency of 0.47% have been determined, respectively. The generation mechanisms of white light and PV of the bi-functional diode were discussed as well.  相似文献   

20.
Organic light-emitting diodes (OLEDs) have been fabricated which consist of N,N′-diphenyl-N,N′-bis(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine) (TPD), 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline (BCP), and tris(8-hydroxyquinoline) aluminum (Alq3). Four emission peaks located at about 401 nm, 425 nm, 452 nm and 480 nm have been obtained in the electroluminescence (EL) spectra of these devices. The former two emissions originate from the exciton emission of TPD molecular. The last two emissions could be attributed to local (LOC) exiplex emission and charge transfer (CT) exiplex emission at the interface between TPD and BCP layers, respectively.  相似文献   

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