Cr-related centers in Gd3Ga5O12 polycrystals

The luminescence excitation spectra, emission spectra under photo- and X-ray excitation, luminescence decay kinetics and thermostimulated luminescence (TSL) of Gd₃Ga₅O₁₂ garnet (GGG) polycrystalline samples have been investigated. It was established that the spectrum of Cr³⁺ ion emission were present in all TSL peaks. The activation energies of traps that are responsible for appearance of TSL in the region 295-600 K were estimated. It is shown that delocalization of electrons from the Cr³⁺e traps leads to the appearance of thermoluminescence (TL) glow peak at 390 K. The nature of other TSL peaks is discussed. The influence of visible light on the TSL intensity of the preliminary X-ray-irradiated samples is shown.     

Temperature dependence of electroluminescence from Si-based light emitting diodes with β-FeSi2 particles active region

Electroluminescence (EL) properties of Si-based light emitting diodes with β-FeSi₂ particles active region grown by reactive deposition epitaxy are investigated. EL intensity of β-FeSi₂ particles versus excitation current densities has different behaviors at 8, 77 K and room temperature, respectively. The EL peak energy shifted from 0.81 to 0.83 eV at 77 K with the increase of current density from 1 to 70 A/cm². Temperature dependence of the peak energy can be well fitted by semi-empirical Varshni's law with the parameters of α=4.34 e-4 eV/K and β=110 K. These results indicate that the EL emission originates from the band-to-band transition with the band gap energy of 0.824 eV at 0 K.     

Photoluminescence and thermoluminescence characterization of Eu- and Dy -activated Ca3(PO4)2 phosphor

Rare-earth-doped polycrystalline Ca₃(PO₄)₂:Eu, Ca₃(PO₄)₂:Dy and Ca₃(PO₄)₂:Eu,Dy phosphors prepared by a modified solid-state synthesis has been studied for its X-ray diffraction, thermoluminescence (TL) and photoluminescence (PL) characteristics. The PL emission spectra of the phosphor suggest the presence of Eu³⁺ ion in Ca₃(PO₄)₂:Eu and Dy³⁺ ion in Ca₃(PO₄)₂:Dy lattice sites. The TL glow curve of the Ca₃(PO₄)₂:Eu compounds has a simple structure with a prominent peak at 228 °C, while Ca₃(PO₄)₂:Dy peaking at 146 and 230 °C. TL sensitivity of phosphors are compared with CaSO₄: Dy and found 1.52 and 1.20 times less in Ca₃(PO₄)₂:Eu and Ca₃(PO₄)₂:Dy phosphors, respectively. The Ca₃(PO₄)₂:Eu,Dy phosphors shows switching behavior under two different excitation wavelengths and enhancement in PL intensity of Dy³⁺ ions were reported. The paper discusses the photoluminescence and thermoluminescence behavior of Eu³⁺ and Dy³⁺ ion in Ca₃(PO₄)₂ hosts, it may be applicable to solid-state lighting as well as thermoluminescence dosimetry applications.     

Emission analysis of Dy and Pr:Bi2O3-ZnF2-B2O3-Li2O-Na2O glasses

In this paper, we present the spectral results of Dy³⁺ and Pr³⁺ (1.0 mol%) ions doped Bi₂O₃-ZnF₂-B₂O₃-Li₂O-Na₂O glasses. Measurements of X-ray diffraction (XRD), differential scanning calorimetry (DSC) profiles of these rare-earth ions doped glasses have been carried out. From the DSC thermograms, glass transition (T_g), crystallization (T_c) and melting (T_m) temperatures have been evaluated. The direct and indirect optical band gaps have been calculated based on the glasses UV absorption spectra. The emission spectrum of Dy³⁺:glass has shown two emission transitions ⁴F_7/2→⁶H_15/2 (482 nm) and ⁴F_7/2→⁶H_13/2 (576 nm) with an excitation at 390 nm wavelength and Pr³⁺:glass has shown a strong emission transition ¹D₂→³H₄ (610 nm) with an excitation at 445 nm. Upon exposure to UV radiation, Dy³⁺ and Pr³⁺ glasses have shown bright yellow and reddish colors, respectively, from their surfaces.     

Growth and spectral characterization of β-Ga2O3 single crystals

Beta gallium oxide (β-Ga₂O₃) single crystals were grown by the floating zone technique. The absorption spectra and the luminescence of the crystals were measured. The absorption spectra showed an intrinsic short cutoff edge around 260 nm with two shoulders at 270 and 300 nm. Not only the characteristic UV (395 nm), blue (471 nm) and green (559 nm) lights, but also the red (692 nm) light can be seen in the emission spectra. The deep UV light was attributed to the existing of quantum wells above the valence band and the red light was owed to the electron-hole recombination via the vicinity donors and acceptors.     

Magnetic resonances spectroscopy of nanosize particles La0.7Sr0.3MnO3

Using a co-precipitation method, perovskite-type manganese oxide La_0.7Sr_0.3MnO₃ nanoparticles (NPs) with particle size 12 nm were prepared. Detailed studies of both ⁵⁵Mn nuclear magnetic resonance and superparamagnetic resonance spectrum, completed by magnetic measurements, have been performed to obtain microscopic information on the local magnetic structure of the NP. Our results on nuclear dynamics provide direct evidence of formation of a magnetically dead layer, of the thickness ≈2 nm, at the particle surface. Temperature dependences of the magnetic resonance spectra have been measured to obtain information about complex magnetic properties of La_0.7Sr_0.3MnO₃ fine-particle ensembles. In particular, electron paramagnetic resonance spectrum at 300 K shows a relatively narrow sharp line, but as the temperature decreases to 5 K, the apparent resonance field decreases and the line width considerably increases. The low-temperature blocking of the NPs magnetic moments has been clearly observed in the electron paramagnetic resonances. The blocking temperature depends on the measuring frequency and for the ensemble of 12 nm NPs at 9.244 GHz has been evaluated as 110 K.     

Improved electron injection of OLEDs with a thin PBD layer at Alq3/Cs2CO3 interface

In this study, the effect of one oxadiazole derivative (PBD) using as an electron injection layer (EIL) at Alq₃/Cs₂CO₃ interface has been investigated. The present of PBD EIL was showed an interesting enhanced electron injection for OLEDs although the nominal electron injection barrier for PBD based OLEDs is much larger, because PBD owns an obvious higher intrinsic the Lowest Unoccupied Molecular Orbital level (2.3 eV) than that of Alq₃ (3.0 eV). For example, the current density of OLEDs at 8 V was increased from 54 mA/cm² to 168 mA/cm² when inserting a thin PBD layer (5 nm) at Alq₃/Cs₂CO₃ interface. Here the increased current is suggested associating with the changed electronic structure of PBD when it contacts with Cs₂CO₃.     

Color centers in neutron-irradiated Y3Al5O12, CAF2 and LiF single crystals

The thermal annealing behavior of the Y₃Al₅O₁₂, CaF₂ and LiF single crystals bombarded at Algiers with reactor neutrons has been monitored by optical absorption spectroscopy. The irradiation was performed at about 315 K. On heating samples after irradiation, the optical absorption bands decrease and disappear completely at 873 and 523 K in the case of Y₃Al₅O₁₂ and CaF₂, respectively. Activation energies of 1.2±0.02 and 0.9±0.2 eV are estimated for Y₃Al₅O₁₂ and CaF₂, respectively. On the other hand, the LiF crystal shows a complex annealing behavior. Here, the optical absorption spectrum presents different shapes after each annealing temperature. Four steps are distinguished and discussed on heating samples from 300 to 673 K. Above 673 K, the absorption drops by about 50%; it completely disappears at 773 K.     

Low-temperature thermoluminescence in CaGa2S4:Eu

In the last years many insulating and semiconducting materials activated with rare-earth elements were found to exhibit phosphorescence and thermoluminescence properties, and are attracting increasing interest due to the variety of application of long-lasting phosphors. In this work we studied the phosphorescence decay and thermoluminescence properties of CaGa₂S₄:Eu²⁺ as a function of temperature in the 9-325 K range. The comparison between spectra recorded as a function of time delay from the excitation pulse at different temperatures indicates that long-lasting emissions peaked at about 2.2 eV occurs at Eu²⁺ sites. Thermoluminescence glow curve is characterized by five components at 69, 98, 145, 185 and 244 K. Experimental data are discussed in the framework of generalized order of kinetic model and allow to estimate the activation energies of trapping defects. The origin of glow components at 69, 98, 145 and 244 K is correlated to trapping defects induced by Eu²⁺ doping, while the component at 185 K is attributed to a continuous distribution of defects.     

Thermoluminescence studies on Cu-doped Li2B4O7 single crystals

Lithium tetraborate (Li₂B₄O₇) is a tissue equivalent material and single crystals of this material doped with Cu are promising for dosimetric applications. In the present study highly transparent single crystals of lithium tetraborate (Li₂B₄O₇) doped with Cu (0.5 wt%) have been grown using the Czochralski technique. The Li₂B₄O₇:Cu crystals were studied using photoluminescence, X-ray diffraction (XRD), UV-vis transmission, time resolved fluorescence and thermoluminescence (TL) techniques. The TL readout of Li₂B₄O₇:Cu crystals showed two well-defined glow peaks at 402 K (peak-1) and 513 K (peak-2) for a 4 K/s heating rate. While the low temperature TL peak-1 fades completely within 24 h at room temperatures, the main dosimetric peak-2 remains the same. The TL sensitivity of the grown single crystal is found to be 3.3 times that of a conventional TL phosphor, TLD-100. The Li₂B₄O₇:Cu crystals showed a linear TL dose-response in the range from 1 mGy to 1 kGy. The TL analysis using a variable dose method revealed first order kinetics for both the peaks. Trap depth and frequency factor for peak-1 were found to be 0.81 eV and 5.2×10⁹ s⁻¹, whereas for peak-2 the values were 1.7 eV and 1.7×10¹⁶ s⁻¹, respectively.     

ESR spectra of Eu centers in defect Ga2S3 single crystals

In this paper, the author presents the results of measurements of the low-temperature and angular dependences of the ESR spectra of Eu²⁺ centers in defect Ga₂S₃ single crystals in the temperature range 8–29 K and for 0–180° orientations of the static magnetic field. The electron structure of impurity ¹⁵¹Eu atoms in Ga₂S₃:Eu single crystals has been studied by using the ESR method at different doping proportions of Eu atoms. Ga₂S₃ single crystals were grown from the melt using the Bridgman method. The Eu concentration was determined by atomic absorption analysis and X–ray fluorescence analysis (XRFA). By investigation on the ESR spectra, the author has first determined the values of charge states for Eu, which have turned out to be a Eu²⁺(4f⁷) ion with spin S=7/2, g=4.18±0.02 and concentration of the states of Eu N=6.3×10¹⁴ cm⁻³.     

Interference of resonance luminescence of exciton polaritons in CuGaS2 crystals

The nonmodulated and wavelength-modulated reflection spectra of CuGaS₂ crystals for the polarization EIIc of 10 K are studied. The states n = 1, 2 and 3 of the excitons Γ₄ (A-excitons) and n = 1, n = 2 of B- and C-excitons are found. The nonmodulated absorption spectra for the polarization E⊥c at 10 K have been studied. The states n = 1, 2 and 3 of Γ₅ excitons are found. The main parameters of the A (Γ₄, Γ₅) and B, C exciton series at the energies of the longitudinal and transverse excitons Γ₄ for the states n = 1 and n = 2, the effective masses of electrons and holes are determined. The photoluminescence peaks were observed at n = 3 and n = 4 of the excitons Γ₅ in the luminescence spectra excited by the line 4880 Å of Ar⁺ laser. In the luminescence spectra the interference is found.     

Irregular Ceand defect-related luminescence in YAlO3 single crystal

Using the methods of time-resolved and steady-state luminescence spectroscopies, the luminescence and defects creation processes were studied at 4.2-300 K under excitation in the 3.0-10.5 eV energy range for an YAlO₃:Ce crystal with very low concentration of Ce³⁺ ions. The results were compared with those obtained at the study of YAlO₃:Ce crystals with large Ce³⁺ content coming from the same technological laboratory. Three irregular Ce³⁺ centers were found and two intrinsic defect luminescence centers related to the cation and oxygen vacancies were evidenced. The origin and structure of luminescence centers are discussed.     

Role of Al or Eu on thermoluminescence of Al- and/or Eu-doped SiO2 crystals

Although SiO₂ crystals have been used in electroluminescence devices and thermoluminescence (TL) dosimeters, the emission mechanism of TL has not yet been clearly explained. Recently, as we could get amorphous and highly pure SiO₂ prepared by the sol-gel method, we have investigated the TL emission mechanism using Al³⁺- and/or Eu³⁺-doped SiO₂ crystalline samples prepared by the heat-treatment under much lower temperature that the melting point of SiO₂. The TL spectrum of the Eu³⁺-doped sample displayed several peaks, including two main peaks due to the electron transitions from ⁵D₂ to ⁷F₅ (ca. 570 nm) and from ⁵D₀ to ⁷F₂ (ca. 610 nm). As doping concentration increased, all the peak intensities reduced from maximum values except that due to the electron transition from ⁵D₀ to ⁷F₂. These observations are thought to result from a cross-relaxation process due to the lack of inversion symmetry at the Eu³⁺ site.     

Exciton photoluminescence, photoconductivity and absorption in GaSe0.9Te0.1 alloy crystals

The photoluminescence, photoconductivity and absorption in GaSe_0.9Te_0.1 alloy crystals have been investigated as a function of temperature and external electric field. It has been observed that the exciton peaks shift to lower energy in GaSe_0.9Te_0.1 alloy crystals compared to GaSe crystals. The long wavelength tails of interband photoluminescence, photoconductivity and absorption spectra are determined by the free exciton states and show an Urbach-Martienssen-type dependence to the photon energy. The maxima of the extrinsic photoluminescence and photoconductivity spectra were found to be determined by the acceptor centers with an energy of E_A=E_V+0.19 eV formed by the polytypism and defects complexes that include Se and Te anions.     

Origin of green luminescence in PbWO4 crystals

Characteristics of two green emission bands, G(I) and G(II), and their origin were investigated within 0.4-300 K under photoexcitation in the 3.4-6.0 eV energy range for undoped and Mo⁶⁺-, Mo⁶⁺ , Y³⁺-, Mo⁶⁺, Nb⁵⁺-, Mo⁶⁺, Ce³⁺-, Cr⁶⁺-, La³⁺-, Ba²⁺- and Cd²⁺-doped PbWO₄ crystals with different concentrations of impurity and intrinsic defects, grown by different methods and annealed at different conditions. The G(I) emission band, observed at low temperatures, located around 2.3-2.4 eV and excited around 3.9 eV, is usually a superposition of many closely positioned bands. The G(I) emission of undoped crystals is assumed to arise from the WO₄²⁻ groups located in the crystal regions of lead-deficient structure. In Mo⁶⁺-doped crystals, this emission arises mainly from the MoO₄²⁻ groups themselves. The G(II) emission band located at 2.5 eV is observed only in the crystals, containing the isolated oxygen vacancies — WO₃ groups. This emission appears at T>160 K under excitation around 4.07 eV as a result of the photo-thermally stimulated disintegration of localized exciton states and subsequent recombination of the produced electron and hole centres near WO₃ groups. The G(II) emission accompanies also thermally stimulated recombination processes in PbWO₄ crystals above 150 K. Mainly the G(II) emission is responsible for the slow decay of the green luminescence in PbWO₄ crystals.     

Characteristic properties of Y2SiO5:Ce thin films grown with PLD

Three different gases (nitrogen (N₂), oxygen (O₂) and argon (Ar)) were used as background gases during the growth of pulsed laser deposition (PLD) Y₂SiO₅:Ce thin films. A Krypton fluoride laser (KrF), 248 nm was used for the PLD of the films on silicon (Si) (1 0 0) substrates. The effect of the background gases on the surface morphology, crystal growth and luminescent properties were investigated. All the experimental parameters, the gas pressure (455 mT), the substrate temperature (600 °C), the pulse frequency (8 Hz), the number of pulses (4000) and the laser fluence (1.6±0.2) J/cm² were kept constant. The only parameter that was changed during the deposition was the ambient gas species. The surface morphology and average particle sizes were monitored with scanning electron microscopy (SEM) and atomic force microscopy (AFM). X-ray diffraction (XRD) and Auger electron spectroscopy (AES) were used to determine the crystal structure and composition, respectively. Cathodo- (CL) and photoluminescence (PL) were used to measure the luminescent intensities for the different phosphor thin films. The nature of the particles, ablated on the substrate, is related to the collisions between the ejected particles and the ambient gas particles. The CL and PL intensities also depend on the particle sizes. A 144 h (coulomb dose of 1.4×10⁴ C cm⁻²) electron degradation study on the thin films ablated in the Ar gas environment resulted in a decrease in the main CL intensity peak at 440 nm and to the development of a new very broad luminescent peak spectra ranging from 400 to 850 nm due to the growth of a SiO₂ layer on the surface.     

Thermoluminescence and photoluminescence of LiNaSO4:Eu irradiated with 24 and 48 MeV Li ion beam

Thermoluminescence (TL) of LiNaSO₄:Eu phosphor, irradiated with 24 and 48 MeV ⁷Li ions at different fluences in the range 5×10⁹-1×10¹² ion/cm², has been studied. The samples from the same batch were also exposed to γ-rays from a Cs¹³⁷ source for comparative studies. The TL glow curves of the materials, irradiated with ⁷Li ions, have similar structures to that of γ-irradiated sample. They have a simple structure with a prominent peak at 412 K along with small one at around 481 K. The intensity ratios of 412-481 K peaks have been observed to increase with fluence increasing, while that of γ-irradiated sample shows a reverse trend. This could be attributed to the changes in the recombination center populations due to ⁷Li ions, that have been implanted inside the matrix of LiNaSO₄:Eu, during irradiation and might also act as a source for new trapping and luminescent centers. The implantation has been confirmed by TRIM calculations. The penetration depths (where the ion comes to rest) are found to be 145 and 463 μm corresponding to 24 and 48 MeV ion beam energies, respectively, which are less than the thickness of the sample chips (∼800 μm). The efficiencies of LiNaSO₄:Eu to 24 and 48 MeV ⁷Li ions measured relative to γ-rays of Cs¹³⁷ are found to be 0.007 and 0.024, respectively. Theoretical analysis of the glow curves of the samples irradiated by ⁷Li ions and γ-rays were done by glow curve deconvolution method to determine trapping parameters of various peaks. The experimentally observed linearity/sublinearity has been discussed in the frame of track interaction model. Photoluminescence studies in the ⁷Li ions irradiated and un-irradiated samples show that europium ions have incorporated in the host in their divalent (emission at 440 nm) as well as trivalent (emissions at 594, 615 and 700 nm) forms. The intensities of the emission bands of these ions have been observed to increase with fluence increasing.     

EPR studies of linewidth anomalies at phase transitions in [N(C2H5)4]2MnCl4

We have studied [N(C₂H₅)₄]₂MnCl₄ crystal by X-band CW EPR spectra in the temperature range 170-300 K. The angular dependences of linewidth ΔH were measured and described in the light of a double-layer system (2D) with exchange interactions. Two temperature anomalies of linewidth ΔH were found at T₁=225 K and T₂=192 K on cooling. Different behaviors of ΔH anomalies recorded for an external magnetic field parallel and perpendicular to the ab crystallographic plane indicate ordering/disordering of MnCl₄ groups in this plane and their displacement along the c-axis which occurs in the temperature of about 225 K.     

Luminescence of undoped β-Ga2O3 single crystals excited by picosecond X-ray and sub-picosecond UV pulses

Undoped β-Ga₂O₃ single crystals were grown using the floating zone technique under a pressure of 2 atm oxygen. Luminescence spectra of the crystals were measured with steady-state X-ray (<15 keV) and UV (258 nm, 4.8 eV) sources. The X-ray excitation produced a spectrum with a peak at 390 nm (3.2 eV) whereas the UV excited spectrum had a peak at 430 nm (2.9 eV). The luminescence rise and decay were also examined by using picosecond X-ray and sub-picosecond UV pulses. It was found that the X-ray pulse excitation gave a slower rise and a faster decay of the luminescence compared with the UV pulse excitation. These results suggest that X-ray excitation generates high energy electrons, building up luminescent states until those electrons lose their kinetic energies, giving rise to the formation of local hot spots in the gallium oxide crystals.