Cr,Nd:YAG self-Q-switched laser with high efficiency output

The high efficient laser performance of self-Q-switched laser in the co-doped Cr⁴⁺,Nd³⁺:YAG microchip with 1.8 mm thickness was demonstrated. The slope efficiency is varied with the reflectivity of output coupler at 1064 nm, and the highest slope efficiency of 26% was obtained for 95% reflectivity of output coupler at 1064 nm. The pulse width, the single pulse energy and the pulse repetition rate for different reflectivity of the output couplers were measured, and the experimental results agree with the numerical calculations of the passively Q-switched rate equations. This can lead to develop the diode laser pumped monolithic self-Q-switched solid-state microchip lasers, especially for the intracavity frequency-doubled solid-state microchip lasers.     

Timing-jitter reduced high-repetition-rate Q-switched Nd:YVO<Subscript>4</Subscript>/Cr<Superscript>4+</Superscript>:YAG micro laser with low pump power

We report a high repetition rate Q-switched Nd:YVO₄/Cr⁴⁺:YAG micro laser with small pump power. Unwanted defects in pulse train, which are inherently large in passively Q-switched laser, was simply minimized by controlling temperature of Nd:YVO₄/Cr⁴⁺:YAG medium. When T ₀ = 90% Cr⁴⁺:YAG and R _OC = 90% output coupler were used, Q-switched Nd:YVO₄/Cr⁴⁺:YAG micro laser showed the optimum output; maximum output power of 58 mW, optical-to-optical efficiency of 9.1%, repetition rate of 1.1 MHz, and pulse width of 57 ns were achieved with 640 mW pumping. MHz-order repetition rate in Nd:YVO₄/Cr⁴⁺:YAG Q-switched laser with low pumping (<1 W) is the highest value to the best of our knowledge.     

High-peak power,passively Q-switched,composite, all-poly-crystalline ceramics Nd:YAG/Cr<Superscript>4+</Superscript>:YAG laser and generation of 532-nm green light

Output performances of passively Q-switched, composite Nd:YAG/Cr⁴⁺:YAG lasers that consisted of bonded, all-poly-crystalline ceramics Nd:YAG and Cr⁴⁺:YAG are reported. Laser pulses at 1.06 μm with 2.5-mJ energy and 1.9-MW peak power are obtained from a 1.1-at % Nd:YAG/Cr⁴⁺:YAG ceramics that was quasi-continuous-wave (quasi-CW) pumped with a diode laser. Single-pass frequency doubling with LiB₃O₅ (LBO) nonlinear crystal at room temperature yielded green laser pulses at 532 nm of 0.36-mJ energy and 0.3-MW peak power, with a conversion efficiency of 0.27.     

Diode pumped Nd:YAG laser repetitively Q-switched with Cr4+:YAG

Based on the rate equations of passively Q-switched solid state lasers, the performance of laser at a fixed pump power can be optimized through the proper choice of output coupler and the low-intensity transmission of saturable absorber. A simple expression for optimizing these two parameters is derived in this paper. We also demonstrate the performance of an efficient diode-pumpe Cr⁴⁺:YAG passively Q-switched Nd:YAG laser to generate a high-repetition-ate, high-peak power 1064 nm laser pulses, which providing pulses peak power > 10 kW with high repetition rate up to 150 kHz, and the pulse width as short as 6.8 ns.     

Sub-nanosecond passively Q-switched Yb:YAG/Cr4+:YAG sandwiched microchip laser

We report on laser-diode pumped low-threshold, and compact passively Q-switched Yb:YAG microchip lasers, with Cr⁴⁺:YAG crystals as the saturable absorbers. The laser threshold at the fundamental wavelength of 1.03 μm is as low as 0.25 W, and the slope efficiency is as high as 36.8%, and the optical-to-optical efficiency is as high as 27% for the 95% initial transmission of the Cr⁴⁺:YAG crystal. A pulse width of 1.35 ns and peak power of over 8.2 kW was obtained. Using a 5 mm thick KTP crystal as the second-harmonic generation medium, 514.7 nm green light of 155 mW power was generated. The pulse duration of 480 ps was generated at 1.03 μm by using 85% of the initial transmission of the Cr⁴⁺:YAG saturable absorber. Stable single-longitudinal-mode oscillation and wide-separated multi-longitudinal-mode oscillation due to the etalon effect of the Cr⁴⁺:YAG thin plate was achieved at different pump power levels. PACS 42.55.Sa; 42.55.Xi; 42.60.Gd     

Laser-diode pumped self-Q-switched microchip lasers

Optical properties of Cr,Yb:YAG, Cr,Nd:YAG crystals, and composite Yb:YAG/Cr:YAG ceramics self-Q-switched solid-state laser materials are presented. The merits of these self-Q-switched laser materials are given and the potentials of such lasers can be chosen by the applications. Cr,Yb:YAG and composite Yb:YAG/Cr:YAG ceramics self-Q-switched laser are conducted. Although several tens of kW peak power can be obtained with a monolithic microchip Cr,Yb:YAG laser, the experimental results show that the performance of this laser is limited by the absorption of Cr⁴⁺ ions at a pump wavelength of 940 nm and strong fluorescence quenching at high Cr concentration. Composite Yb:YAG/Cr:YAG ceramics are more suitable to realize high pulse energy and peak power (up to MW level) with optimized lasing and Q-switching parts. In addition, the instabilities induced by the multi-longitudinal mode competition in Cr,Nd:YAG and Cr,Yb:YAG microchip lasers are addressed. The different gain bandwidths of Yb:YAG and Nd:YAG play an important role in the instability of the output laser pulse trains. Stable laser pulses from the Cr,Yb:YAG microchip laser were obtained due to the antiphase dynamics. For the Cr,Nd:YAG microchip laser, the instability caused by the multi-longitudinal mode competition is an intrinsic property. Different transverse patterns were observed in Cr,Nd:YAG microchip lasers when a pump beam with larger diameter was used. Saturated inversion population distribution inside the gain medium plays an important role in the transverse pattern formation. Different transverse patterns were reconstructed by combining different sets of the Hermite-Gaussian modes.     

被动调QNd:YAG/Cr:YAG微晶片激光器的优化设计与实验

用数值求解速率方程的方法对被动调Q微晶片激光器进行了优化设计,并在实验中验证了这一优化效果。首先对速率方程进行数值求解,从数值求解的结果中得出了几个关键性参数,例如可饱和吸收体的初始透过率、输出镜反射率、激光器腔长、激光器腔内损耗、抽运激光光斑大小等,给出了关键性的参数对被动调QNd∶YAG/Cr∶YAG激光器的影响;然后基于数值求解的结果对微晶片激光器进行了优化设计,例如缩短激光腔长度,减小腔内损耗,选择合适的输出镜反射率、初始透过率和抽运激光光斑大小等;最后完成了两种不同参数的微晶片被动调QNd∶YAG/Cr∶YAG微晶片激光器的制作。     

Pulse symmetry and pulse duration compression in a diode-pumped doubly passively Q-switched Nd:YVO4 lasers with Cr4+:YAG and GaAs saturable absorbers

We present a simple technique to improve the symmetry of pulse emitted by doubly passively Q-switched lasers. Using both Cr⁴⁺:YAG and GaAs saturable absorbers in the same cavity, a diode-pumped doubly passively Q-switched Nd:YVO₄ laser is realized for the fist time. This laser can generate more symmetric pulse with shorter pulse width and higher peak power compared with the solely passively Q-switched laser with Cr⁴⁺:YAG saturable absorber or GaAs coupler. The pulse symmetry factor ε of such a doubly passively Q-switched laser is experimentally shown to reach 1.05. Simulations by a rate-equation model for doubly passively Q-switched laser are in close agreement with the experimental results.PACS 42.55.Xi; 42.55.Rz; 42.60.Gd     

LD side-pumped passively Q-switched Yb:YAG slab laser

A quasi-continuous wave laser diode side-pumped passively Q-switched Yb:YAG slab laser with Cr⁴⁺:YAG saturable absorber has been demonstrated in order to understand the pulse properties of Yb:YAG crystal. To our knowledge the maximum 69% extraction efficiency is achieved by the system. 44 μJ pulse energy and 1.64 KW peak power with near diffraction-limited beam quality are presented at 25 Hz repetition rate. The build-up time of the Q-giant in the passively Q-switched laser is shown.     

LD-pumped passively Q-switched Nd:YVO4/YVO4 laser with an Nd3+:Cr4+:YAG saturable absorber

By using a piece of codoped Nd³⁺:Cr⁴⁺:YAG crystal as a saturable absorber, a laser-diode pumped passively Q-switched Nd:YVO₄/YVO₄ laser has been realized. The maximum laser output power of 2.452 W has been obtained at the incident pump power of 8.9 W for an 8.8% transmission of the output coupler at 1064 nm, corresponding to a slope efficiency of 30%. The other output laser characteristics of the laser have also been investigated. The laser with a Nd³⁺:Cr⁴⁺:YAG saturable absorber has a lower threshold pump power and a higher slope efficiency compared to that with a similar small-signal transmission of a Cr⁴⁺:YAG saturable absorber.     

Passively Q-switched GdVO<Subscript>4</Subscript>/Nd:GdVO<Subscript>4</Subscript> laser with Cr<Superscript>4+</Superscript>:YAG saturable absorber under direct 879 nm diode pumping to the emitting level

A passively Q-switched 1.06 μm laser with Cr⁴⁺:YAG saturable absorber by direct 879 nm diode pumping grown-together composite GdVO₄/Nd:GdVO₄ crystal to the emitting level was demonstrated in this paper. The characteristics of pulsed laser were investigated by using two kinds of Cr⁴⁺:YAG crystal with the initial transmissivity of 80 and 90%, respectively. When the T ₀ = 90% Cr⁴⁺:YAG was used, an average output power of 1.59 W was achieved at an incident pump power of 10 W. The pulse width and repetition rate were 64.5 ns and 170 kHz, respectively. The thermal lens effect of laser crystal was analyzed.     

LD端面泵浦Cr4:YAG被动调Q激光器输出特性研究

对激光二极管端面泵浦Cr⁴⁺:YAG被动调QNd:YAG激光器输出特性进行了实验研究.实验研究发现,激光器输出功率及脉冲重复频率随谐振腔长度增大而增大.为解释这一实验现象,测量了泵浦光斑在激光晶体内尺寸,同时计算了激光晶体及Cr⁴⁺:YAG晶体内的基模激光光斑半径随谐振腔长度变化.分析结果表明:激光晶体内泵浦光斑尺寸远小于激光晶体内基模光斑半径,腔模间交叠效率较低;当腔长增加时,激光晶体内的基模激光光斑减小,腔模间交叠效率增加,从而导致输出功率及脉冲重复频率随腔长增加而增加;另外,Cr⁴⁺:YAG晶体内光斑半径也随谐振腔长度减小,引起Cr⁴⁺:YAG晶体漂白时间缩短,导致脉冲重复频率随腔长增加而增加.     

Passively Q-switched diode-pumped Cr:YAG/Nd:GdVO4 monolithic microchip laser

The realization of high repetition rate passively Q-switched monolithic microlaser is a challenge since a decade. To achieve this goal, we report here on the first passively Q-switched diode-pumped microchip laser based on the association of a Nd:GdVO₄ crystal and a Cr⁴⁺:YAG saturable absorber. The monolithic design consists of 1 mm long 1% doped Nd:GdVO₄ optically contacted on a 0.4 mm long Cr⁴⁺:YAG leading to a plano-plano cavity. A repetition rate as high as 85 kHz is achieved. The average output power is approximately 400 mW for 2.2 W of absorbed pump power and the pulse length is 1.1 ns.     

1.3-ns pulse,compact passively Q-switched microchip green laser by Nd:YAG/Cr<Superscript>4+</Superscript>:YAG composite crystal

In this article, a diode-end-pumped passively Q-switched extra-cavity frequency doubled micro-type green laser by Nd:YAG/Cr⁴⁺:YAG composite crystal was demonstrated. The dependence of the average out power, pulse width and pulse repetition rate on incident pump power were measured. Under the pump power of 14 W, the minimum pulse width of 1.3 ns with repetition rate of 68.0 kHz was obtained, corresponding single-pulse energy of 8.8 μJ and peak power of 6.7 kW.     

Diode-end-pumped passively Q-switched 1319 nm Nd:YAG ceramic laser with a V<Superscript>3+</Superscript>:YAG saturable absorber

The performance of a LD-end-pumped passively Q-switched Nd:YAG ceramic laser at 1319 nm with a V³⁺:YAG saturable absorber was demonstrated for the first time to the best of our knowledge. The average output power of 1.8 W was obtained under the pump power of 23.7 W, corresponding to the optical conversion efficiency of 7.8% and slope efficiency of 9%. The minimum pulse width was 128 ns with the pulse repetition rate of 230 kHz, which was attained with a T = 2.8% output coupler at the pump power of 23.7 W.     

Single diode-pumped, 1.7 ns microchip laser by Nd:YAG/Cr<Superscript>4+</Superscript>:YAG composite crystal

A single diode-pumped passively Q-switched composite Nd:YAG/Cr⁴⁺:YAG laser, which cavity mirrors were deposited directly onto the crystal, was demonstrated in this paper. At the incident power of 2.75 W, the maximum average output power of 365 mW and the shortest pulse width of 1.7 ns were obtained, corresponding the repetition rate of 14.6 kHz. The single-pulse energy and the peak power were estimated to be 25 μJ and 14 kW, respectively. The corresponding optical-optical conversion efficiency was 13.3%.     

2 ns-pulse, compact and reliable microchip lasers by Nd:YAG/Cr4+ YAG composite crystal

A compact diode-end-pumped passively Q-switched composite Nd:YAG/Cr⁴⁺:YAG laser was demonstrated in this paper. At the incident pump power of 11.8 W, the shortest pulse width of 2.05 ns was obtained, corresponding to average output power of 1.15 W and repetition rate of 17.1 kHz. The single-pulse energy and peak power were estimated to be 67.3 μJ and 32.8 kW, respectively.     

Passively Q-switched intracavity frequency-doubled Nd:LuVO<Subscript>4</Subscript>/LBO green laser with a Cr<Superscript>4+</Superscript>:YAG saturable absorber

This work presents experimental results concerning a passively Q-switched intracavity frequencydoubled Nd:LuVO₄/LBO green laser with a Cr⁴⁺:YAG saturable absorber operated at the wavelength of 0.53 μm. A maximal output power of 1.28 W was obtained at a pump power of 16.34 W, and peak power, pulse width as well as repetition frequency were 1.48 kW, 41 ns and 21 kHz, respectively.     

Passively Q-switched Nd:YAG ceramic laser towards large pulse energy and short pulse width

A large pulse energy and high peak power passively Q-switched ceramic neodymium-doped yttrium aluminum garnet (Nd:YAG) laser has been demonstrated with Cr⁴⁺:YAG crystals as the saturable absorbers. By employing a continuous wave (CW) laser-diode (LD) as the pump source, as high as 11.3 W CW output power of 1064 nm was obtained under the pump power of 21.6 W, with an optical conversion efficiency of 52.3%. Inserting different initial transmissions Cr⁴⁺:YAG as saturable absorbers, under the incident pump power of 15.6 W, the largest pulse energy, shortest pulse width, and highest peak power are measured to be 188 μJ, 3.16 ns, and 59.5 kW, respectively. As we has known, this is the best passively Q-switched results ever reported by Nd:YAG ceramic material.     

Diode-pumped passively Q-switched YAG/Yb:YAG laser with Cr4+:YAG as a saturable absorber

We design an efficient passively Q-switched laser using a composite YAG/Yb:YAG crystal as the laser gain medium and a Cr⁴⁺:YAG crystal as a saturable absorber. We obtain an average output power of 1.81 W in 1030 nm laser at an absorbed pump power of 4.8 W, corresponding to an optical-to-optical efficiency of 37.7% and a slope efficiency of 47.3%. The pulsed laser has a repetition rate of about 28.6 kHz and a pulse width of 15.8 ns, with the highest peak power of 4 kW. In addition, using a LBO as the intracavity frequency doubler, we obtain a maximum power of 246 mW in 515 nm pulsed laser at an absorbed pump power of 3.8 W.