In_xGa_（1－x）As缓冲层上In_yGa_（1－y）As／（Al）Ga

本文中，发现在Ｉｎ＿ｘＧａ＿(１－ｘ)Ａｓ缓冲层上非故意掺杂的ＩｎｙＧａ＿(１－ｙ)Ａｓ／（Ａｌ）ＧａＡｓ超晶格样品中存在着两个互相反向的自建电场区，一个位于样品表面，另一个位于Ｉｎ＿ｘＧａ＿(１－ｘ)Ａｓ缓冲层和超晶格界面．据此，合理地解释了样品的光伏测试结果，并对此类样品的ＭＯＣＶＤ生长工艺给予指导．     

InP基InGaAlAs/InGaAsSb应变量子阱激光器的子带跃迁计算

采用有效质量模型下的4×4 Luttinger-Kohn哈密顿量矩阵对In0.53Ga0.39Al0.08As/InxGa1-xAs0.9Sb0.1量子阱结构的能带进行了计算。求得了C1-HH1跃迁波长随In组分及阱宽的变化关系,并采用力学平衡模型计算了此应变材料体系在生长时的临界厚度。结果表明,在结构设计和材料生长中采用合适的材料组分和阱宽,在InP基InGaAlAs/InGaAsSb应变量子阱激光器中能够实现1.6～2.5 μm近中红外波段的激射波长。     

p型Ga0.47In0.53AS接触层的生长

用过冷法在632-630℃生长了掺Zn的p型Ga0.47In0.53As接触层.研究了液相中Ga组分和Zn组分对GaxIn1-xAs/InP异质结晶格失配的影响,用一次外延技术生长了GaxIn1-xAs作接触层的GaInAsP/InP双异质结.     

Computation of the strain field generated by dislocations with a position-dependent Burgers' vector distribution

A new phenomenon of strain relaxation will be presented. In a series of InxGa1-xAs graded composition buffer layers grown on well cut (001) GaAs substrates, a curvature of the epilayer lattice has been found, i.e. a tilt of the epilayer lattice orientation with respect to the substrate which varies coherently along the sample surface on the scale of several mm. The most recent data analysis performed on a buffer layer compositionally graded with a six-step profile shows also a thickness functional dependence of the curvature. The epilayer lattice curvature has been attributed to a coherent lateral distribution of the Burgers' vectors. An analytical model has been developed in the framework of the continuum elasticity theory to compute the related strain field. The results show small but unexpected contributions to the parallel strain.     

Al_xIn_(1-x)As电子结构和光学性质的第一性原理研究

基于密度泛函理论,对各组分Al_xIn_(1-x)As(x为0～1)的晶体结构,电子结构和光学性质进行了第一性原理计算.结果显示,随Al组分x增加,Al_xIn_(1-x)As晶体各键长将缩短,键角发生变化,晶胞体积也将减小,晶格常数的变化符合Vegard定律.另外,随着Al组分x的增加,Al_xIn_(1-x)As的禁带宽度变宽,且能带有从直接带隙结构转变为间接带隙结构的趋势.具有较高In组分的Al_xIn_(1-x)As晶体在可见光区域中的光吸收能力更强,光谱响应范围更大.     

四元合金GaxIn1-xAs1-ySby的禁带宽度与组分关系的计

GalnAsSb是直接带隙、窄禁带的半导体材料,其波长范围为0. 87-12μm,粗盖了2-4 m, 3-5μm和8-12μm三个重要的红外应用波段,可制作室温下工作的红外光电器件,在光纤通信、环境监测、资源勘探、空间技术及军事等方面有广泛的应用前景.     

Electrical measurement of the direct spin hall effect in Fe/InxGa(1-x)As heterostructures

We report on an all-electrical measurement of the spin Hall effect in epitaxial Fe/InxGa(1-x)As heterostructures with n-type (Si) channel doping and highly doped Schottky tunnel barriers. A transverse spin current generated by an ordinary charge current flowing in the InxGa(1-x)As is detected by measuring the spin accumulation at the edges of the channel. The spin accumulation is identified through the observation of a Hanle effect in the voltage measured by pairs of ferromagnetic Hall contacts. We investigate the bias and temperature dependence of the resulting Hanle signal and determine the skew and side-jump contributions to the total spin Hall conductivity.     

MOCVD生长InxGa1-xN合金微观结构和光学特性

利用发光光谱、X射线衍射(XRD)、原子力显微(AFM)等实验方法对MOCVD生长的InxGa1-xN合金进行了研究。原子力显微图样表明样品表面出现纳米尺度为微岛状结构。样品PL和PLE谱表明,其主要吸收峰位于波长为365,474nm,发光峰的位置位于波长为545,493nm处,其中545nm发光峰半高宽较493nm发光峰宽,这两个峰分别起源于In(Ga)N浸润层和InGaN层发光,浸润层局域化激子和岛状微观结构弛豫特性是产生发光峰Stokes移动的重要原因。     

在(100)GaAs衬底上低温液相外延晶格匹配的In1-xGaxAs1-yPy层及其特性研究

介绍一种低温液相外延技术,可在650℃在GaAs衬底上生长晶格匹配和组份可重复的In1-xGaxAs1-yPy层。给出对外延层进行场发射扫描电镜观察、电子探针、X光双晶衍射、俄歇电子谱和光荧光测量得到的结果。结果表明外延层具有平坦的异质结界面和良好的晶体特性。同时研究了异质结界面的粗糙度和组份梯度变化区域的宽度和晶格失配率的关系。     

Dependence of third-order nonlinear susceptibility on strain induced piezoelectric field in InxGa1-xN/GaN quantum well

The third-order susceptibility of InxGa1-xN/GaN quantum well (QW) has been investigated by taking into account the strain-induced piezoelectric (PZ) field, and the effective-mass SchrSdinger equation is solved numerically. It is shovn that the third-order susceptibility for third harmonic generation (THG)of InxGa1-x,N/GaN QW is related to indium content in QW and the intensity of the PZ field. The characteristics ofX(3)THG(-3ω,(3) ω, ω,ω) as the function of the wavelength of incident beam, well width and indium content, have been analyzed.     

GaAs/Al_xGa_(1-x)As多量子阱外延结构及其LP-MOCVD生长工艺研究

在低压金属有机化学气相沉积生长工艺中,对用于制作850nm垂直腔面发射激光器件的GaAs/Al_xGa_(1-x)As多量子阱外延结构的生长温度、反应室压力、总载气流量以及生长速度等主要工艺参量进行优化,并进行了完整外延结构的生长.实验结果表明:在700℃条件下,得到多种组分的GaAs/Al_xGa_(1-x)As多量子阱结构,通过光致发光谱对比测试得到的最佳组分x为0.24,同时得到良好的表面形貌,最终确定的最佳生长速度为0.34~0.511nm/s.     

基于GaAs/AlxGa1-xAs多量子阱光子晶体的窄带滤波器

讨论了利用GaAs/AlxGa1-xAs多量子阱构成的一维光子晶体实现窄带滤波的原理.研究了外加电场下GaAs/AlxGa1-xAs多量子阱的激子吸收所导致的反常色散行为.研究发现,在反常色散材料的共振频率附近,存在一个较强色散且吸收很小的区域,该区域内的色散可以在PCs的带隙中产生一个窄的通频带,其对应的最大透过率约为0.73,全固态滤光器的带宽约为4.9 nm,并可利用外加电场进行调谐,这将为设计一种全新的固态滤波器提供指导.     

MOCVD外延生长AlGaAs组份的在线监测

利用反射各向异性谱( RAS)和反射谱在线监测了AlxGa1-xAs样品的金属有机化合物汽相淀积(MOCVD)外延生长过程.通过在线监测得到的RAS和反射谱可以敏感地反映出AlxGa1-xAs外延层组份发生的变化,从而优化外延生长工艺.实验表明,反射谱中的振荡周期可以在线计算组份和生长速率,利用反射谱中的振荡的第一个最...     

MOCVD制备InxGa1－xN/GaN MQWs的温度依赖性

利用方势阱模型对In_xGa_1－xN/GaN MQWs结构的光特性进行了量子力学定性理论分析.并在MO源流量恒定条件下，在570℃～640℃范围内进行了不同生长温度的多量子阱制备实验，对In_xGa_1－xN制备过程中的In组份掺入效率的温度依赖关系进行研究.通过对制备样品的PL谱测量分析，得到了587℃～600℃的In组份最佳掺入温度区间.     

InxGa1-xN/InyGa1-yN多量子阱结构 发光特性的测量与分析

利用MOCVD方法在蓝宝石衬底上生长了In_xGa_1-xN/In_yGa_1-yN多量子阱结构外延层,并用变温光致发光(PL)光谱、选择激发光谱以及激发(PLE)光谱等手段研究了该结构的量子效率、多峰效应的起源以及峰位随温度变化等信息。变温PL光谱的结果表明:在温度从30 K变化到300 K时,其峰值强度只下降了1.36倍且发光波长发生了蓝移。通过选择激发光谱证明了其发光峰位的独立性。PLE结果表明了GaN和势垒层的Stokes位移很小,但是In_xGa_1-xN阱层的Stokes位移变化很大。同时,提出了一种可同时获得多个吸收边的数据处理方法。     

双异质结AlxGa1-xAs/GaAs发光管中与氧有关能级的测量

用DLTS和单次脉冲瞬态电容技术研究了液相外延生长的双异质结AlxGa1-xAs/GaAs发光管,掺Si的n-Al0.05Ga0.95As有源层中的深能级。着重分析了一个与氧有关的电子陷阱,其发射激活能为EC-ED=0.29eV。我们发现该电子陷阱随正向注入脉冲宽度tp的增加DLTS峰向低温移动,即在确定的温度下发射率随tp的增加而增加。用DLTS首次测得该能级的俘获瞬态谱,发现俘获峰随反向撤空脉冲宽度tR的增加向低温端移动,即在确定的温度下俘获率随tR的增加而增加,并且俘获激活能从△Eσ=0.28eV变化到0.26eV,用位形坐标图讨论了引起变化的原因。     

Fermi-edge singularities in AlxGa1-xAs quantum wells: extrinsic versus many-body scattering processes

A Fano resonance mechanism is evidenced to control the formation of optical Fermi-edge singularities in multisubband systems such as remotely doped AlxGa1-xAs heterostructures. Using Fano parameters, we probe the physical nature of the interaction between Fermi sea electrons and empty conduction subbands. We show that processes of extrinsic origin like alloy disorder prevail easily at 2D over multiple diffusions from charged valence holes expected by many-body scenarios.     

用电子计算机来分析p-AlxGa1-xAs/p-GaAs/n-GaAs太阳电池的性能

通过对p-AlxGa1-xAs/p-GaAs/n-GaAs太阳电池的少子扩散长度、结深、Al组分及其它光电参数的测量,初步确立了此电池的模型,以此模型用电子计算机计算了电池的量子效率谱等性能并与实验作了比较,进一步还分析了结深、扩散长度等参数对电池性能的影响.     

Wavelength Tuning in the Two-Section Distributed Bragg Reflector Laser Fabricatedby Quantum-Well Intermixing

The two-section tunable ridge waveguide distributed Bragg reflector (DBR) lasers fabricated by strained InxGa1-xAsyP1-y. The threshold current of the laser is 51mA. The tunable range of the laser is 3.2nm and the side mode suppression ratio (SMSR) is more 38dB.     

Influence of In-N Clusters on Band Gap Energy of Dilute Nitride In_xGa_(1-x)N_yAs_(1-y)

The In-N clusters form in the dilute nitride InxGa1-xNy As1-yalloys after annealing.It is found that the formation of the In-N clusters not only raises the N levels lying above the conduction band minimum(CBM)of In GaA s,but also raises the N levels below the CBM of In GaA s,leading to the variation of the impurity-host interaction.The blueshift of the band gap energy is relative to the variation of the impurity-host interaction.In order to describe the blueshift of the band gap energy due to the formation of the In-N clusters,a model is developed.It is found that the model can describe the blueshift of the band gap energy well.In addition,it is found the blueshift of the band gap energy due to the atom interdiffusion at the interface can be larger than that due to the formation of the In-N clusters.