From magnetically doped topological insulator to the quantum anomalous Hall effect

Quantum Hall effect （QHE）, as a class of quantum phenomena that occur in macroscopic scale, is one of the most important topics in condensed matter physics. It has long been expected that QHE may occur without Landau levels so that neither external magnetic field nor high sample mobility is required for its study and application, Such a QHE free of Landau levels, can appear in topological insulators （TIs） with ferromagnetism as the quantized version of the anomalous Hall effect, i.e., quantum anomalous Hall （QAH） effect. Here we review our recent work on experimental realization of the QAH effect in magnetically doped TIs. With molecular beam epitaxy, we prepare thin films of Cr-doped （Bi,Sb）2Te3 TIs with well- controlled chemical potential and long-range ferromagnetic order that can survive the insulating phase. In such thin films, we eventually observed the quantization of the Hall resistance at h/e2 at zero field, accompanied by a considerable drop in the longitudinal resistance. Under a strong magnetic field, the longitudinal resistance vanishes, whereas the Hall resistance remains at the quantized value. The realization of the QAH effect provides a foundation for many other novel quantum phenomena predicted in TIs, and opens a route to practical applications of quantum Hall physics in low-power-consumption electronics.     

Quantum critical duality in two-dimensional Dirac semimetals

Quantum criticality is closely related to the existence of two phases with unrelated symmetry breaking. In this paper,we study Néel and Kekulé valence bond state(VBS) quantum criticality in Dirac semimetals with four-fermion interactions.Our results show that all possible dynamical masses yield the same critical coupling, which exhibits the phenomenon that all possible phases meet at a multicritical point(e.g., a tricritical point for the Néel, Kekulé-VBS and semimetallic phases).In terms of the well-established Wess–Zumino–Witten field theory, we investigate the typical criticality for the transition between Néel and Kekulé-VBS phases, and the compatible Néel–Kekulé-VBS mass matrices imply the existence of a nonLandau transition between the Néel and Kekulé-VBS phases. We show the existence of mutual duality in the defect-driven Néel–Kekulé-VBS transition near the non-Landau critical point and find that this mutual duality results from the presence of a mutual Chern–Simons term. We also study the mutual duality based on dual topological excitations.     

Quantum spin Hall effect in a square-lattice model under a uniform magnetic field

We study a toy square-lattice model under a uniform magnetic field. Using the Landauer-Bttiker formula, we calculate the transport properties of the system on a two-terminal, a four-terminal and a six-terminal device. We find that the quantum spin Hall (QSH) effect appears in energy ranges where the spin-up and spin-down subsystems have different filling factors. We also study the robustness of the resulting QSH effect and find that it is robust when the Fermi levels of both spin subsystems are far away from the energy plateaus but is fragile when the Fermi level of any spin subsystem is near the energy plateaus. These results provide an example of the QSH effect with a physical origin other than time-reversal (TR) preserving spin-orbit coupling (SOC).     

Thickness dependence of the anomalous Hall effect in disordered face-centered cubic FePt alloy films

The anomalous Hall effect in disordered face-centered cubic(fcc) FePt alloy films is experimentally studied. The longitudinal resistivity independent term of the anomalous Hall conductivity(AHC) increases and approaches saturation with increasing film thickness. The contribution of side jump scattering is suggested to decrease monotonically with increasing film thickness, which can be ascribed to the variation of the surface scattering with the film thickness. The sign of the skew scattering contribution to the AHC is opposite to that of the intrinsic contribution in the system.     

Thickness dependence of the anomalous Hall effect in disordered face-centered cubic FePt alloy filmsThickness dependence of the anomalous Hall effect in disordered face-centered cubic FePt alloy filmsThickness dependence of the anomalous Hall effect in disordered face-centered cubic FePt alloy films

The anomalous Hall effect in disordered face-centered cubic （fcc） FePt alloy films is experimentally studied. The longitudinal resistivity independent term of the anomalous Hall conductivity （AHC） increases and approaches saturation with increasing film thickness. The contribution of side jump scattering is suggested to decrease monotonically with increasing film thickness, which can be ascribed to the variation of the surface scattering with the film thickness. The sign of the skew scattering contribution to the AHC is opposite to that of the intrinsic contribution in the system.     

Anomalous Hall effect of heavy holes in III-V semiconductor quantum wells

The anomalous Hall effect of heavy holes in semiconductor quantum wells is studied in the intrinsic transport regime, where the Berry curvature governs the Hall current properties. Based on the first--order perturbation of wave function the expression of the Hall conductivity the same as that from the semiclassical equation of motion of the Bloch particles is derived. The dependence of Hall conductivity on the system parameters is shown. The amplitude of Hall conductivity is found to be balanced by a competition between the Zeeman splitting and the spin--orbit splitting.     

Observation of an Even-Odd Asymmetric Transport in High Landau Levels

Magnetotransport experiments including tilt fields are performed on ultrahigh mobility L-shaped Hall-bar samples of GaAs/AlGaAs quantum wells.The low-temperature longitudinal resistivity(ρ_(xx))data demonstrate that a striking even-odd asymmetric transport exists along the [110] direction at half filling in N 2 high Landau levels.Although the origin for the peculiar even-odd asymmetry remains unclear,we propose that the coupling strength between electrons within the same Landau level and between the neighboring two Landau levels should be considered in future studies.The tilt field data show that the in-plane field can suppress the formation of both bubble and stripe phases.     

Giant-Capacitance-Induced Wide Quantum Hall Plateaus in Graphene on LaAlO_3/SrTiO_3 Heterostructures

Hybrid structures of two distinct materials provide an excellent opportunity to optimize functionalities.We report the realization of wide quantum Hall plateaus in graphene field-effect devices on the LaAlO_3/SrTiO_3 heterostructures.Well-defined quantized Hall resistance plateaus at filling factors ν=±2 can be obtained over wide ranges of the magnetic field and gate voltage,e.g.,extending from 2 T to a maximum available magnetic field of 9 T.By using a simple band diagram model,it is revealed that these wide plateaus arise from the ultralarge capacitance of the ultra-thin LAO layer acting as the dielectric layer.This is distinctly different from the case of epitaxial graphene on Si C substrates,where the realization of giant Hall plateaus relies on the charge transfer between the graphene layer and interface states in SiC.Our results offer an alternative route towards optimizing the quantum Hall performance of graphene,which may find its applications in the further development of quantum resistance metrology.     

Electronic states and shapes of silicon quantum dots

A curviform surface breaks the symmetrical shape of silicon quantum dots on which some bonds can produce localized electronic states in the bandgap. The calculation results show that the bonding energy and electronic states of silicon quantum dots are different on various curved surfaces, for example, a Si-O-Si bridge bond on curved surface provides localized levels in bandgap and its bonding energy is shallower than that on the facet. The red-shifting ofthe photoluminescence spectrum on smaller silicon quantum dots can be explained by the curved surface effect. Experiments demonstrate that silicon quantum dots are activated for emission due to the localized levels provided by the curved surface effect.     

Spin-1 Blume-Capel model with longitudinal random crystal and transverse magnetic fields：A mean-field approach

The spin-1 Blume-Capel model with transverse and longitudinal external magnetic fields h, in addition to a longitudinal random crystal field D, is studied in the mean-field approximation. It is assumed that the crystal field is either turned on with probability p or turned off with probability 1 p on the sites of a square lattice. Phase diagrams are then calculated on the reduced temperature crystal field planes for given values of γ=Ω/J and p at zero h. Thus, the effect of changing γ and p are illustrated on the phase diagrams in great detail and interesting results are observed.     

On the Singular Effects in the Relativistic Landau Levels in Graphene with a Disclination

The effect of a pseudo Aharonov-Bohm (AB) magnetic field generated by a disclination on a two-dimensional electron gas in graphene is addressed in the continuum limit within the geometric approach. The influence of the coupling between the spinor fields and the singular conical curvature is investigated, which shows that singularities have pronounced impact in the Hall conductivity. Moreover, the degeneracy related to the Dirac valleys is broken for negative values of the angular momentum quantum numbers, l, includingl ≡ 0. In this case, a Hall plateau develops at the null filling factor. Obtaining the Hall conductivity by summing over the positive and the negative l's, the null Landau level is recovered and the plateau at the null filling factor disappears. In any case, the standard plateaus, which are seen in a flat graphene are not obtained with these curvature and singular effects.     

Electric- and magnetic-field-tuned Landau levels and Hall conductivity in AA-stacked bilayer graphene

We theoretically study the combined effect of magnetic and electric fields on the Landau levels and Hall conductivity in AA-stacked bilayer graphene. From the analytic expressions derived, we obtain explicit criterions for determining the zero-energy Landau level and different level crossings in the graphene bilayer. For providing a scheme of experimental verification, we further explore the quantum Hall effect in such a biased bilayer. It is found that the zero-conductance Hall plateau in this system can vanish at certain specific combinations of magnetic and electric fields, accompanying with the occurrence of resonance Hall conductivity steps.     

Detection of hidden localized states by the quantum Hall effect in graphene

We fabricated a monolayer graphene transistor device in the shape of the Hall-bar structure, which produced an exactly symmetric signal following the sample geometry. During electrical characterization, the device showed the standard integer quantum Hall effect of monolayer graphene except for a broader range of several quantum Hall plateaus corresponding to small filling factors in the electron region. We investigated this anomaly on the basis of localized states owing to the presence of possible electron traps, whose energy levels were estimated to be near the Dirac point. In particular, the inequality between the filling of electrons and holes was ascribed to the requirement of excess electrons to fill the trap levels. The relations between the quantum Hall plateau, Landau level, and filling factor were carefully analyzed to reveal the details of the localized states in this graphene device.     

Effects of disorder on modulated quantum Hall systems

The Hall conductivity and the localization length are calculated for weakly modulated two-dimensional systems within the lowest Landau level approximation. We find that the fractal character of the Hofstadter butterfly is reflected on the coincidence in the localization and the Hall conductivity among a series of fluxes φ+2n with integers n.     

二维三角格点系统中的拓扑陈数

利用紧束缚模型对二维三角周期格点中各能带的陈数分布进行研究.通过严格对角化方法得到体系能量本征值和对应的本征态，再利用Kubo公式计算出量子化的霍尔电导、态密度及各扩展态对应的陈数.在傅里叶变换下将哈密顿量转换到k空间从而得到体系的能谱分布.研究表明：次近邻格点之间的跳跃积分t'的不同取值影响体系各能带对应的陈数分布，计算得到当t'=1/2时体系三个能带从低到高对应的陈数分布为{-4，5，-1}，t'=-1/2时其对应陈数分布变化为{2，-4，2}，而t'=±1/4时对应的陈数分布都为{2，-1，-1}.同时发现：能谱帯隙的宽度和对应霍尔平台的宽度一致，并且k空间的能带越平坦，其对应的在霍尔电导跳跃处的态密度峰就越高越尖锐，而该处霍尔电导跳跃就越陡峭.     

The enigma of the quantum Hall effect in graphene

We apply Laughlin’s gauge argument to analyze the ν=0 quantum Hall effect observed in graphene when the Fermi energy lies near the Dirac point, and conclude that this necessarily leads to divergent bulk longitudinal resistivity in the zero temperature thermodynamic limit. We further predict that in a Corbino geometry measurement, where edge transport and other mesoscopic effects are unimportant, one should find the longitudinal conductivity vanishing in all graphene samples which have an underlying ν=0 quantized Hall effect. We argue that this ν=0 graphene quantum Hall state is qualitatively similar to the high field insulating phase (also known as the Hall insulator) in the lowest Landau level of ordinary semiconductor two-dimensional electron systems. We establish the necessity of having a high magnetic field and high mobility samples for the observation of the divergent resistivity as arising from the existence of disorder-induced density inhomogeneity at the graphene Dirac point.     

Quantum Hall effect in intentionally disordered two‐dimensional electron systems

In this work intentionally disordered two‐dimensional electron systems in modulation doped GaAs/GaAlAs heterostructures are studied by magnetotransport experiments. The disorder is provided by a δ‐doped layer of negatively charged beryllium acceptors. In low magnetic fields a strong negative magnetoresistance is observed that can be ascribed to magnetic‐field‐induced delocalization. At increased magnetic fields the quantum Hall effect exhibits broad Hall plateaus whose centers are shifted to higher magnetic fields, i.e. lower filling factors. This shift can be explained by an asymmetric density of states. Consistently, the transition into the insulating state of quantum Hall droplets in high magnetic fields occurs at critical filling factors around ν_c=0.4, i.e. well below the value 1/2 that is expected for symmetric disorder potentials. The insulator transition is characterized by the divergence of both the longitudinal resistance as well as the Hall resistance. This is contrary to other experiments which observe a finite Hall resistance in the insulating regime and has not been observed previously. According to recent theoretical studies the divergence of the Hall resistance points to quantum coherent transport via tunneling between quantum Hall droplets. The magnetotransport experiments are supplemented by simulations of potential landscapes for random and correlated distributions of repulsive scatterers, which enable the determination of percolation thresholds, densities of states, and oscillator strengths for far‐infrared excitations. These simulations reveal that the strong shift of the Hall plateaus and the observed critical filling factor for the insulator transition in high magnetic fields require an asymmetric density of states that can only be generated by a strongly correlated beryllium distribution. Cyclotron resonance on the same samples also indicates the possibility of correlations between the beryllium acceptors.     

Spin polarization dependent optical transition rates observed in the integer quantum Hall region

We report on a field-dependent photoluminescence (PL) emission rate for the transitions between band states in modulation-doped CdTe/Cd_1−xMg_xTe single quantum wells in the integer quantum Hall region. The recombination time observed for the magneto-PL spectra varies in concomitance with the integer quantum Hall plateaus. Furthermore, different PL decay times were observed for the two circular polarizations, i.e. for the transitions between the Zeeman split subbands of the Landau levels. We analyzed the data in comparison with the experimentally determined spin polarization of the conduction electrons and the Zeeman splitting of the valence band. Furthermore, we discuss the relevance of the spin polarization of the conduction electrons, the electron–hole exchange interaction and the spin-flip processes of the hole states for the PL decay time.     

The stability of the fractional quantum Hall effect in topological insulators

With the recent observation of graphene-like Landau levels at the surface of topological insulators, the possibility of fractional quantum Hall effect, which is a fundamental signature of strong correlations, has become of interest. Some experiments have reported intra-Landau level structure that is suggestive of fractional quantum Hall effect. This paper discusses the feasibility of fractional quantum Hall effect from a theoretical perspective, and argues that while this effect should occur, ideally, in the n=0 and |n|=1 Landau levels, it is ruled out in higher |n| Landau levels. Unlike graphene, the fractional quantum Hall effect in topological insulators is predicted to show an interesting asymmetry between n=1 and n=−1 Landau levels due to spin-orbit coupling.