Mn interstitial diffusion in (ga,mn)as

We present a combined theoretical and experimental study of the ferromagnetic semiconductor (Ga,Mn)As which explains the remarkably large changes observed on low-temperature annealing. Careful control of the annealing conditions allows us to obtain samples with ferromagnetic transition temperatures up to 159 K. Ab initio calculations, in situ Auger spectroscopy, and resistivity measurements during annealing show that the observed changes are due to out diffusion of Mn interstitials towards the surface, governed by an energy barrier of 0.7-0.8 eV. Electric fields induced by Mn acceptors have a significant effect on the diffusion.     

Phase controlled superconducting proximity effect probed by tunneling spectroscopy

Using a dual-mode STM-AFM microscope operating below 50 mK we measured the local density of states along small normal wires connected at both ends to superconductors with different phases. We observe that a uniform minigap can develop in the whole normal wire and in the superconductors near the interfaces. The minigap depends periodically on the phase difference. The quasiclassical theory of superconductivity applied to a simplified 1D model geometry accounts well for the data.     

Magnetization-direction-dependent local electronic structure probed by scanning tunneling spectroscopy

Scanning tunneling spectroscopy (STS) of thin Fe films on W(110) shows that the electronic structure of domains and domain walls is different. This experimental result is explained on the basis of first-principles calculations. A detailed analysis reveals that the spin-orbit induced mixing between minority d(xy+xz) and minority d(z(2)) spin states depends on the magnetization direction and changes the local density of states in the vacuum detectable by STS. As a consequence nanometer-scale magnetic structure information is obtained even by using nonmagnetic probe tips.     

Surface vibrational modes of alpha-quartz(0001) probed by sum-frequency spectroscopy

Infrared-visible sum-frequency spectroscopy was used to probe surface vibrations of alpha-quartz(0001) under ambient conditions. Two modes at 880 and 980 cm(-1) were observed and identified as arising from Si-O-Si and Si-OH structures of the surface. Heat treatment and hydroxylation could convert Si-OH to Si-O-Si and vice versa. The technique is generally applicable to studies of surface phonons of other oxides, semiconductors, and insulators.     

In-gap density of states in hole- and electron-doped CuO2 planes probed by scanning tunneling spectroscopy

The low-energy electronic structure of a c-axis Sr_xA_yCuO₂ (A is alkaline earth cation, x+y≦1, hole- and electron-doped infinite layer) thin film, grown by laser-molecular-beam epitaxy on a SrTiO₃ (001) substrate, has been studied using ultrahigh-vacuum scanning tunneling microscopy/spectroscopy. Images have been obtained for co-deposited Sr_xA_yCuO₂ thin films, which show the surface consisting of flat terraces separated by steps that are unit cell high. Tunneling spectra of undoped Sr_0.3Ca_0.7CuO₂ indicate a wide band gap of 1.8 eV which is consistent with the charge transfer gap. Hole-doped Sr_0.85CuO₂ shows in-gap states appearing at both the valence and conduction band edges. In contrast, for the electron-doped Sr_0.9La_0.1CuO₂, in-gap states appear predominantly above the Fermi level, and the spectral shape becomes asymmetric around the Fermi level. When these two systems are compared, barrier-height measurements reveal that there is no apparent shift of the Fermi level measured from the vacuum level. This suggests that the framework of the rigid-band picture might break down implying a strongly correlated electron system. Received: 20 August 1998 / Accepted: 15 February 1999 / Published online: 5 May 1999     

Defect states at the TiO2(110) surface probed by resonant photoelectron diffraction

The charge distribution of the defect states at the reduced TiO(2)(110) surface is studied via a new method, the resonant photoelectron diffraction. The diffraction pattern from the defect state, excited at the Ti-2p-3d resonance, is analyzed in the forward scattering approach and on the basis of multiple scattering calculations. The defect charge is found to be shared by several surface and subsurface Ti sites with the dominant contribution on a specific subsurface site in agreement with density functional theory calculations.     

Local structure of Mn in (Ga,Mn)As probed by X-ray absorption spectroscopy

Local structure of Mn atoms in Ga_1−xMn_xAs epilayers was studied using the X-ray absorption fine structure (XAFS) at Mn K-edge. X-ray near edge structure (XANES) and extended X-ray absorption fine structure (EXAFS) techniques were used. XAFS spectra for different Mn sites has been calculated and compared with the experimental data. Multi-parameter fitting of the EXAFS data indicates that 15-25% of Mn atoms are in interstitial sites in the as grown films. The Mn-As bond length has been found longer than Ga-As bond length in GaAs for both substitutional (Mn_Ga) and interstitial (Mn_I) sites.     

Isotope and temperature effects in liquid water probed by x-ray absorption and resonant x-ray emission spectroscopy

High-resolution x-ray absorption and emission spectra of liquid water exhibit a strong isotope effect. Further, the emission spectra show a splitting of the 1b1 emission line, a weak temperature effect, and a pronounced excitation-energy dependence. They can be described as a superposition of two independent contributions. By comparing with gas phase, ice, and NaOH/NaOD, we propose that the two components are governed by the initial state hydrogen bonding configuration and ultrafast dissociation on the time scale of the O 1s core hole decay.     

Discretization of electronic states in large InAsP/InP multilevel quantum dots probed by scanning tunneling spectroscopy

The topography and the electronic structure of InAsP/InP quantum dots are probed by cross-sectional scanning tunneling microscopy and spectroscopy. The study of the local density of states in such large quantum dots confirms the discrete nature of the electronic levels whose wave functions are measured by differential conductivity mapping. Because of their large dimensions, the energy separation between the discrete electronic levels is low, allowing for quantization in both the lateral and growth directions as well as the observation of the harmonicity of the dot lateral potential.     

Nearest-neighbor configuration in (GaIn)(NAs) probed by x-ray absorption spectroscopy

Ga(1-x)In(x)N(y)As(1-y) is a promising material system for the fabrication of inexpensive "last-mile" optoelectronic components. However, details of its atomic arrangement and the relationship to observed optical properties is not fully known. Particularly, a blueshift of emission wavelength is observed after annealing. In this work, we use x-ray absorption fine structure to study the chemical environment around N atoms in the material before and after annealing. We find that as-grown molecular beam epitaxy material consists of a nearly random distribution of atoms, while postannealed material shows segregation of In toward N. Ab initio simulations show that this short-range ordering creates a more thermodynamically stable alloy and is responsible for blueshifting the emission.     

Smearing of the coulomb blockade by resonant tunneling

We study the Coulomb blockade in a grain coupled to a lead via a resonant impurity level. We show that the strong energy dependence of the transmission coefficient through the impurity level can have a dramatic effect on the quantization of the grain charge. In particular, if the resonance is sufficiently narrow, the Coulomb staircase shows very sharp steps even if the transmission through the impurity at the Fermi energy is perfect. This is in contrast to the naive expectation that perfect transmission should completely smear charging effects.     

Reduction of thin-film ceria on Pt(111) by supported Pd nanoparticles probed with resonant photoemission

Local defects present in CeO_2 ? x films result in a mixture of Ce³⁺ and Ce⁴⁺ oxidation states. Previous studies of the Ce 3d region with XPS have shown that depositing metal nanoparticles on ceria films causes further reduction, with an increase in Ce³⁺ concentration. Here, we compare the use of XPS and resonant photoemission spectroscopy (RESPES) to estimate the concentration of Ce³⁺ and Ce⁴⁺ in CeO_2 ? x films grown on Pt (111), and the variation of this concentration as a function of Pd deposition. Due to the nature of the electronic structure of CeO_2 ? x, resonant peaks are observed for the 4d–4f transitions when the photon energy matches the resonant energy; (hν = 121.0 eV) for Ce³⁺ and (hν = 124.5 eV) for Ce⁴⁺. This results in two discrete resonant photoemission peaks in valence band spectra. The ratio of the difference of these peaks with off-resonance scans gives an indication of the relative contribution of Ce³⁺. Results from RESPES indicate reduction of CeO_2 ? x on deposition of Pd, confirming earlier findings from XPS studies.     

Overcoming of the gamow tunneling insufficiencies by maximizing the damp-matching resonant tunneling

The resonant quantum tunneling current through the barrier between two wells may be maximized when the damp (absorption) in one well matches the barrier parameters. The maximum resonant tunneling current is much greater than the conventional expectation by a factor ofθ (1/θ ² is the Gamow tunneling factor). It is shown that with all the established quantum mechanics, very much higher reaction probabilities between nuclei in contrary to the Gamow theory can be explained in agreement with experiments. Particularly, the resonance will select the sub-barrier fusion with a suitable fusion rate which matches the barrier parameters. This selective resonant tunneling model is able to explain both the hot fusion data (e.g. the width of resonance in¹¹B(p,α)2α reaction) and the cold fusion data (e.g. “excess heat” without any commensurate neutron andγ radiation). This work is supported by the State Commission of Science and Technology, the Natural Science Foundation of China (Contract #19645005), and the Fundamental Research Fund of Tsinghua University.     

Investigation of InP/InGaAs superlattice-emitter resonant tunneling bipolar transistors (RTBTs)

An InP/InGaAs superlattice-emitter resonant tunneling bipolar transistor (SE-RTBT) has been fabricated and demonstrated. The influence of the superlattice and emitter thickness on the device characteristics is studied. The insertion of the superlattice and a well-designed emitter improve the characteristics of the SE-RTBT. Common-emitter current gains up to 170 and 54 are obtained for the studied devices with emitter thicknesses of 800 Å and 150 Å, respectively. Based on the specified structure, the lower offset voltage and saturation voltage (  ≤ 1.5 V) are obtained. Experimentally, the device with a 5-period superlattice and an emitter thickness of 800 Å provides higher dc performance and stable temperature-dependent characteristics.