Metallic transport in a monatomic layer of in on a silicon surface

We have succeeded in detecting metallic transport in a monatomic layer of In on an Si(111) surface, Si(111)-sqrt[7]×sqrt[3]-In surface reconstruction, using the micro-four-point probe method. The In layer exhibited conductivity higher than the minimum metallic conductivity (the Ioffe-Regel criterion) and kept the metallic temperature dependence of resistivity down to 10?K. This is the first example of a monatomic layer, with the exception of graphene, showing metallic transport without carrier localization at cryogenic temperatures. By introducing defects on this surface, a metal-insulator transition occurred due to Anderson localization, showing hopping conduction.     

Three-dimensional spin rotations at the Fermi surface of a strongly spin-orbit coupled surface system

The spin texture of the metallic two-dimensional electron system (sqrt[3]×sqrt[3])-Au/Ge(111) is revealed by fully three-dimensional spin-resolved photoemission, as well as by density functional calculations. The large hexagonal Fermi surface, generated by the Au atoms, shows a significant splitting due to spin-orbit interactions. The planar components of the spin exhibit a helical character, accompanied by a strong out-of-plane spin component with alternating signs along the six Fermi surface sections. Moreover, in-plane spin rotations toward a radial direction are observed close to the hexagon corners. Such a threefold-symmetric spin pattern is not described by the conventional Rashba model. Instead, it reveals an interplay with Dresselhaus-like spin-orbit effects as a result of the crystalline anisotropies.     

Surface phase transitions induced by electron mediated adatom-adatom interaction

We propose that the indirect adatom-adatom interaction mediated by the conduction electrons of a metallic surface is responsible for the sqrt[3]xsqrt[3]<==>3x3 structural phase transitions observed in Sn/Ge (111) and Pb/Ge (111). When the indirect interaction overwhelms the local stress field imposed by the substrate registry, the system suffers a phonon instability, resulting in a structural phase transition in the adlayer. Our theory is capable of explaining all the salient features of the sqrt[3]xsqrt[3]<==>3x3 transitions observed in Sn/Ge (111) and Pb/Ge (111), and is in principle applicable to a wide class of systems whose surfaces are metallic before the transition.     

Transition from overlayer growth to alloying growth of Ga on Si(111)-alpha-(sqrt[3]xsqrt[3])-Au

Atomic depth distribution and growth modes of Ga on an Si(111)-alpha-(sqrt[3]xsqrt[3])-Au surface at room temperature were studied after each monolayer deposition of Ga via reflection high-energy electron diffraction and characteristic x-ray spectroscopy measurements as functions of glancing angle theta(g) of the incident electron beam. One monolayer of Ga grew on the Au layer, and the sqrt[3]xsqrt[3] periodicity was conserved below the Ga overlayer. Above a critical Ga coverage of about one monolayer, this growth mode drastically changed; i.e., Au atoms dissociated from the sqrt[3]xsqrt[3] structure and Ga grew into islands of Ga-Au alloy.     

Metallic nature of the alpha-Sn/Ge(111) surface down to 2.5 K

Low temperature (down to 2.5 K) scanning tunneling microscopy (STM) and spectroscopy (STS) measurements are presented to assess the nature of the alpha-Sn/Ge(111) surface. Bias-dependent STM and STS measurements have been used to demonstrate that such a surface preserves a metallic 3 x 3 reconstruction at very low temperature. A tip-surface interaction mechanism becomes active below about 20 K at the alpha-Sn/Ge(111) surface, resulting in an apparent unbuckled (sqrt[3] x sqrt[3]) reconstruction when filled states STM images are acquired with tunneling currents higher than 0.2 nA.     

Direct observation of charge transfer at a MgO(111) surface

Transmission electron diffraction (TED) combined with direct methods have been used to study the sqrt[3]xsqrt[3]R30 degrees reconstruction on the polar (111) surface of MgO and refine the valence charge distribution. The surface is nonstoichiometric and is terminated by a single magnesium atom. A charge-compensating electron hole is localized in the next oxygen layer and there is a nominal charge transfer from the oxygen atoms to the top magnesium atom. The partial charges that we obtain for the surface atoms are in reasonable agreement with empirical bond-valence estimations.     

Surface Reconstruction with a Fractional Hole: (sqrt[5] x sqrt[5])R26.6 degrees LaAlO3 (001)

The structure of the (sqrt[5] x sqrt[5])R26.6 degrees reconstruction of LaAlO3 (001) has been determined using transmission electron diffraction combined with direct methods. It has a lanthanum oxide termination with one lanthanum vacancy per surface unit cell. Density functional calculations indicate that charge compensation occurs by a fractional number of highly delocalized holes, and that the surface contains no oxygen vacancies and the holes are not filled with hydrogen. The reconstruction can be understood in terms of expulsion of the more electropositive cation from the surface and increased covalency.     

Spin freezing transition and non-Fermi-liquid self-energy in a three-orbital model

A single-site dynamical mean-field study of a three band model with the rotationally invariant interactions appropriate to the t_(2g) levels of a transition metal oxide reveals a quantum phase transition between a paramagnetic metallic phase and an incoherent metallic phase with frozen moments. The Mott transitions occurring at electron densities n=2, 3 per site take place inside the frozen moment phase. The critical line separating the two phases is characterized by a self-energy with the frequency dependence Sigma(omega) approximately sqrt[omega] and a broad quantum critical regime. The findings are discussed in the context of the power law observed in the optical conductivity of SrRuO3.     

Vacant-site octahedral tilings on SrTiO(3) (001), the (sqrt[13]×sqrt[13])R33.7° surface, and related structures

The structure of the SrTiO(3) (001) (sqrt[13]×sqrt[13])R33.7° surface reconstruction has been determined using transmission electron diffraction combined with direct methods and density functional theory. It has a TiO(2)-rich surface with a 2D tiling of edge or corner-sharing TiO(5)□ octahedra. Additionally, different arrangements of these octahedral units at the surface, dictated by local bond-valence sums, form 2D networks that can account for many ordered surface reconstructions as well as disordered glasslike structures consistent with the multitude of structures observed experimentally, and potentially other materials and interfaces.     

Atomic imaging of oxygen desorption from tungsten trioxide

We report direct observations by high-resolution electron microscopy of oxygen desorption from tungsten trioxide. Clear evidence is found for layer epitaxial growth of metallic tungsten with (110)W|(100)WO₃ and [001]W and [001]WO₃ parallel to the electron beam, consistent with low-energy electron diffraction data on the low-temperature epitaxy of WO₃ on W. W[001] was always observed parallel to the electron beam independent of the surface normal. The results suggest that bulk and surface damage, and displacement processes, are similar.     

Surface soft phonon and the sqrt[3] x sqrt[3] <--> 3x3 phase transition in Sn/Ge(111) and Sn/Si(111)

Density functional theory calculations show that the reversible Sn/Ge(111) sqrt[3]xsqrt[3]<-->3x3 phase transition can be described in terms of a surface soft phonon. The isovalent Sn/Si(111) case does not display this transition since the sqrt[3]xsqrt[3] phase is the stable structure at low temperature, although it presents a partial softening of the 3x3 surface phonon. The rather flat energy surfaces for the atomic motion associated with this phonon mode in both cases explain the experimental similarities found at room temperature between these systems. The driving force underlying the sqrt[3]xsqrt[3]<-->3x3 phase transition is shown to be associated with the electronic energy gain due to the Sn dangling bond rehybridization.     

Disproportionation phenomena on free and strained Sn/Ge(111) and Sn/Si(111) surfaces

Distortions of the sqrt[3]x sqrt[3] Sn/Ge(111) and Sn/Si(111) surfaces are shown to reflect a disproportionation of an integer pseudocharge, Q, related to the surface band occupancy. A novel understanding of the (3 x 3)-1U ("1 up, 2 down") and 2U ("2 up, 1 down") distortions of Sn/Ge(111) is obtained by a theoretical study of the phase diagram under strain. Positive strain keeps the unstrained value Q=3 but removes distortions. Negative strain attracts pseudocharge from the valence band causing first a (3 x 3)-2U distortion (Q=4) on both Sn/Ge and Sn/Si, and eventually a (sqrt[3] x sqrt[3])-3U ("all up") state with Q=6. The possibility of a fluctuating phase in unstrained Sn/Si(111) is discussed.     

Role of the Metal/Semiconductor interface in quantum size effects: Pb /Si(111)

Self-organized islands of uniform heights can form at low temperatures on metal/semiconductor systems as a result of quantum size effects, i.e., the occupation of discrete electron energy levels in the film. We compare the growth mode on two different substrates [Si(111)- (7x7) vs Si(111)- Pb(sqrt[3]xsqrt[3] )] with spot profile analysis low-energy electron diffraction. For the same growth conditions (of coverage and temperature) 7-step islands are the most stable islands on the (7x7) phase, while 5-step (but larger islands) are the most stable islands on the (sqrt[3]xsqrt[3] ). A theoretical calculation suggests that the height selection on the two interfaces can be attributed to the amount of charge transfer at the interface.     

Orbital degeneracy removed by charge order in triangular antiferromagnet AgNiO2

We report a high-resolution neutron diffraction study on the orbitally degenerate spin-1/2 hexagonal metallic antiferromagnet AgNiO2. A structural transition to a tripled unit cell with expanded and contracted NiO6 octahedra indicates sqrt[3]xsqrt[3] charge order on the Ni triangular lattice. This suggests charge order as a possible mechanism of lifting the orbital degeneracy in the presence of charge fluctuations, as an alternative to the more usual Jahn-Teller distortions. A novel magnetic ground state is observed at low temperatures with the electron-rich S=1 Ni sites arranged in alternating ferromagnetic rows on a triangular lattice, surrounded by a honeycomb network of nonmagnetic and metallic Ni ions. We also report first-principles band-structure calculations that explain microscopically the origin of these phenomena.     

Adatom-vacancy mechanisms for the C6)/Al111-(6 x 6) reconstruction

The irreversible (6x6) reconstruction of the C(60)/Al(111) system from the (2sqrt[3]x2sqrt[3])R30 degrees phase is studied by first-principles techniques. We find that C60 binds optimally to the surface if an Al vacancy is created directly underneath. The removed Al atoms form a (6x6) array of ad-dimers in the interstices below the C60 overlayer, to which they strongly bind. This spontaneous local process, rather than the compression state of the unreconstructed C60 overlayer, explains why one molecule out of three protrudes from the surface upon reconstruction.     

Kinetic hindrance during the initial oxidation of Pd(100) at ambient pressures

The oxidation of the Pd(100) surface at oxygen pressures in the 10(-6) to 10(3) mbar range and temperatures up to 1000 K has been studied in situ by surface x-ray diffraction (SXRD). The results provide direct structural information on the phases present in the surface region and on the kinetics of the oxide formation. Depending on the (T,p) environmental conditions, we observe either a thin (sqrt[5]xsqrt[5])R27 degrees surface oxide or the growth of a rough, poorly ordered bulk oxide film of PdO predominantly with (001) orientation. By either comparison to the surface phase diagram from first-principles atomistic thermodynamics or by explicit time-resolved measurements we identify a strong kinetic hindrance to the bulk oxide formation even at temperatures as high as 675 K.     

Flat bands and Wigner crystallization in the honeycomb optical lattice

We study the ground states of cold atoms in the tight-binding bands built from p orbitals on a two dimensional honeycomb optical lattice. The band structure includes two completely flat bands. Exact many-body ground states with on-site repulsion can be found at low particle densities, for both fermions and bosons. We find crystalline order at n=1/6 with a sqrt[3] x sqrt[3] structure breaking a number of discrete lattice symmetries. In fermionic systems, if the repulsion is strong enough, we find the bonding strength becomes dimerized at n=1/2. Experimental signatures of crystalline order can be detected through the noise correlations in time of flight experiments.     

Surface structure of an ultrathin alumina film on Ni3Al(111): a dynamic scanning force microscopy study

The surface structure of an ultrathin alumina film on a Ni3Al(111) substrate has been studied by dynamic scanning force microscopy. The alumina film exhibits a hexagonal superstructure with a lattice parameter of 4.14 nm and a (1/sqrt[3] x 1/sqrt[3])R30 degrees substructure. Two domains rotated by 24 degrees are present. The film is terminated by a hexagonal lattice of oxygen ions with a lattice parameter of 0.293 nm, which is rotated by 30 degrees with respect to the substrate lattice. The nodes of the 4.14 nm superstructure and the 2.39 nm substructure are pinned on points of the substrate lattice, where the surface atomic lattice is almost commensurable. The oxygen lattice is perfectly hexagonal close to these nodes and disordered in the surrounding regions.     

Sn/Ge(111) surface charge-density-wave phase transition

Angle-resolved photoemission has been utilized to study the surface electronic structure of 1 / 3 monolayer of Sn on Ge(111) in both the room-temperature (sqrt[3]xsqrt[3] )R30 degrees phase and the low-temperature ( 3x3) charge-density-wave phase. The results reveal a gap opening around the ( 3x3) Brillouin zone boundary, suggesting a Peierls-like transition despite the well-documented lack of Fermi nesting. A highly sensitive electronic response to doping by intrinsic surface defects is the cause for this unusual behavior, and a detailed calculation illustrates the origin of the ( 3x3) symmetry.     

Spin polarization of quantum well states in Ag films induced by the Rashba effect at the surface

The electronic structure of Ag(111) quantum well films covered with a (sqrt[3]xsqrt[3]) R30 degrees Bi/Ag surface ordered alloy, which shows a Rashba spin-split surface state, is investigated with angle-resolved photoemission spectroscopy. The band dispersion of the spin-split surface state is significantly modified by the interaction with the quantum well states of Ag films. The interaction is well described by the band hybridization model, which concludes the spin polarization of the quantum well states.