Dissipative quantum hall effect in graphene near the Dirac point

We report on the unusual nature of the nu=0 state in the integer quantum Hall effect (QHE) in graphene and show that electron transport in this regime is dominated by counterpropagating edge states. Such states, intrinsic to massless Dirac quasiparticles, manifest themselves in a large longitudinal resistivity rho(xx) > or approximately h/e(2), in striking contrast to rho(xx) behavior in the standard QHE. The nu=0 state in graphene is also predicted to exhibit pronounced fluctuations in rho(xy) and rho(xx) and a smeared zero Hall plateau in sigma(xy), in agreement with experiment. The existence of gapless edge states puts stringent constraints on possible theoretical models of the nu=0 state.     

Carrier relaxation in epitaxial graphene photoexcited near the Dirac point

We study the carrier dynamics in epitaxially grown graphene in the range of photon energies from 10 to 250 meV. The experiments complemented by microscopic modeling reveal that the carrier relaxation is significantly slowed down as the photon energy is tuned to values below the optical-phonon frequency; however, owing to the presence of hot carriers, optical-phonon emission is still the predominant relaxation process. For photon energies about twice the value of the Fermi energy, a transition from pump-induced transmission to pump-induced absorption occurs due to the interplay of interband and intraband processes.     

Shot noise fluctuations in disordered graphene nanoribbons near the Dirac point

Random fluctuations of the shot-noise power in disordered graphene nanoribbons are studied. In particular, we calculate the distribution of the shot noise of nanoribbons with zigzag and armchair edge terminations. We show that the shot noise statistics is different for each type of these two graphene structures, which is a consequence of the presence of different electron localizations: while in zigzag nanoribbons electronic edge states are Anderson localized, in armchair nanoribbons edge states are absent, but electrons are anomalously localized. Our analytical results are verified by tight binding numerical simulations with random hopping elements, i.e., off diagonal disorder, which preserves the symmetry of the graphene sublattices.     

Reprint of : Shot noise fluctuations in disordered graphene nanoribbons near the Dirac point

Random fluctuations of the shot-noise power in disordered graphene nanoribbons are studied. In particular, we calculate the distribution of the shot noise of nanoribbons with zigzag and armchair edge terminations. We show that the shot noise statistics is different for each type of these two graphene structures, which is a consequence of the presence of different electron localizations: while in zigzag nanoribbons electronic edge states are Anderson localized, in armchair nanoribbons edge states are absent, but electrons are anomalously localized. Our analytical results are verified by tight binding numerical simulations with random hopping elements, i.e., off diagonal disorder, which preserves the symmetry of the graphene sublattices.     

Quantum Hall ferromagnetism in graphene

Graphene is a two-dimensional carbon material with a honeycomb lattice and Dirac-like low-energy excitations. When Zeeman and spin-orbit interactions are neglected, its Landau levels are fourfold degenerate, explaining the 4e2/h separation between quantized Hall conductivity values seen in recent experiments. In this Letter we derive a criterion for the occurrence of interaction-driven quantum Hall effects near intermediate integer values of e2/h due to charge gaps in broken symmetry states.     

Quantum spin Hall effect in graphene

We study the effects of spin orbit interactions on the low energy electronic structure of a single plane of graphene. We find that in an experimentally accessible low temperature regime the symmetry allowed spin orbit potential converts graphene from an ideal two-dimensional semimetallic state to a quantum spin Hall insulator. This novel electronic state of matter is gapped in the bulk and supports the transport of spin and charge in gapless edge states that propagate at the sample boundaries. The edge states are nonchiral, but they are insensitive to disorder because their directionality is correlated with spin. The spin and charge conductances in these edge states are calculated and the effects of temperature, chemical potential, Rashba coupling, disorder, and symmetry breaking fields are discussed.     

Fractional quantum Hall States of Dirac electrons in graphene

We have investigated the fractional quantum Hall states of Dirac electrons in a graphene layer in different Landau levels. The relativistic nature of the energy dispersion relation of electrons in graphene significantly modifies the interelectron interactions. This results in a specific dependence of the ground state energy and the energy gaps for electrons on the Landau-level index. For the valley-polarized states, i.e., at nu=1/m, m being an odd integer, the energy gaps have the largest values in the n=1 Landau level. For the valley-unpolarized states, e.g., for the 2/3 state, the energy gaps are suppressed for n=1 as compared to those at n=0. For both n=1 and n=0, the ground state of the 2/3 system is fully valley-unpolarized.     

Quantum Hall effect, screening, and layer-polarized insulating states in twisted bilayer graphene

We investigate electronic transport in dual-gated twisted-bilayer graphene. Despite the subnanometer proximity between the layers, we identify independent contributions to the magnetoresistance from the graphene Landau level spectrum of each layer. We demonstrate that the filling factor of each layer can be independently controlled via the dual gates, which we use to induce Landau level crossings between the layers. By analyzing the gate dependence of the Landau level crossings, we characterize the finite interlayer screening and extract the capacitance between the atomically spaced layers. At zero filling factor, we observe an insulating state at large displacement fields, which can be explained by the presence of counterpropagating edge states with interlayer coupling.     

Quantum Hall activation gaps in bilayer graphene

We have measured the quantum Hall activation gaps in bilayer graphene at filling factors $\nu =\pm 4$ and $\nu =\pm 8$ in high magnetic fields up to 30 T. We find that energy levels can be described by a 4-band relativistic hyperbolic dispersion. The Landau level width is found to contain a field independent background due to an intrinsic level broadening and a component which increases linearly with magnetic field.     

Quantum Hall effect in twisted bilayer graphene

We address the quantum Hall behavior in twisted bilayer graphene transferred from the C face of SiC. The measured Hall conductivity exhibits the same plateau values as for a commensurate Bernal bilayer. This implies that the eightfold degeneracy of the zero energy mode is topologically protected despite rotational disorder as recently predicted. In addition, an anomaly appears. The densities at which these plateaus occur show a magnetic field dependent offset. It suggests the existence of a pool of localized states at low energy, which do not count towards the degeneracy of the lowest band Landau levels. These states originate from an inhomogeneous spatial variation of the interlayer coupling.     

Control of the Dirac point in graphene by UV light

It is experimentally shown that the initially shifted Dirac point in grapheme-on-dielectric devices can be brought to zero by illuminating the samples with UV light. This is much easier to accomplish compared to the common procedure of annealing at high temperature. Internal photoemission is concluded to be responsible for the observed effect.     

Quantum Hall states of high symmetry

We identify some hidden symmetries of Chern-Simons theories, such as appear in the effective theory for quantized Hall states. This allows us to determine which filling fractions admit spin-singlet quantum Hall states. Our results shed some light on states already observed at , and transitions between them. We identify SU(2), or higher, symmetries of many additional states — including spin-polarized states. Our symmetries classify low-lying excited states and may be of use in the construction of trial wavefunctions, but are typically not present in the edge theory, where they are lifted by non-universal couplings.     

Distinguishing spontaneous quantum Hall states in bilayer graphene

Chirally stacked N-layer graphene with N≥2 is susceptible to a variety of distinct broken symmetry states in which each spin-valley flavor spontaneously transfers charge between layers. In mean-field theory, one of the likely candidate ground states for a neutral bilayer is the layer antiferromagnet that has opposite spin polarizations in opposite layers. In this Letter, we analyze how the layer antiferromagnet and other competing states are influenced by Zeeman fields that couple to spin and by interlayer electric fields that couple to layer pseudospin, and comment on the possibility of using Zeeman responses and edge state signatures to identify the character of the bilayer ground state experimentally.     

Spontaneous parity breaking of graphene in the Quantum Hall regime

We propose that the inversion symmetry of the graphene honeycomb lattice is spontaneously broken via a magnetic-field-dependent Peierls distortion. This leads to valley splitting of the n=0 Landau level but not of the other Landau levels. Compared to Quantum Hall valley ferromagnetism recently discussed in the literature, lattice distortion provides an alternative explanation to all of the currently observed Quantum Hall plateaus in graphene.     

Gate-defined graphene quantum point contact in the quantum Hall regime

We investigate transport in a gate-defined graphene quantum point contact in the quantum Hall regime. Edge states confined to the interface of p and n regions in the graphene sheet are controllably brought together from opposite sides of the sample and allowed to mix in this split-gate geometry. Among the expected quantum Hall features, an unexpected additional plateau at 0.5h/e2 is observed. We propose that chaotic mixing of edge channels gives rise to the extra plateau.     

Spin-filtered edge states and quantum Hall effect in graphene

Electron edge states in graphene in the quantum Hall effect regime can carry both charge and spin. We show that spin splitting of the zeroth Landau level gives rise to counterpropagating modes with opposite spin polarization. These chiral spin modes lead to a rich variety of spin current states, depending on the spin-flip rate. A method to control the latter locally is proposed. We estimate Zeeman spin splitting enhanced by exchange, and obtain a spin gap of a few hundred Kelvin.     

Hall effect in nested antiferromagnets near the quantum critical point

We investigate the behavior of the Hall coefficient in the case of antiferromagnetism driven by Fermi-surface nesting, and find that the Hall coefficient should abruptly increase with the onset of magnetism, as recently observed in vanadium doped chromium. This effect is due to the sudden removal of flat portions of the Fermi surface upon magnetic ordering. Within this picture, the Hall coefficient should scale as the square of the residual resistivity divided by the impurity concentration, which is consistent with available data.     

Spontaneous quantum Hall states in chirally stacked few-layer graphene systems

Chirally stacked N-layer graphene systems with N≥2 exhibit a variety of distinct broken symmetry states in which charge density contributions from different spins and valleys are spontaneously transferred between layers. We explain how these states are distinguished by their charge, spin, and valley Hall conductivities, by their orbital magnetizations, and by their edge state properties. We argue that valley Hall states have [N/2] edge channels per spin valley.