Collective excitations and quantum size effects on the surfaces of Pb(111) films: An experimental study

Pb(111) film is a special system that exhibits strong quantum size effects in many electronic properties. The collective excitations, i.e., plasmons, in Pb(111) films are also expected to show signatures of the quantum size effect. Here, using high-resolution electron energy loss spectroscopy, we measured the plasmons on the surface of Pb(111) films with different film thicknesses and analyzed the plasmon dispersions. One surface plasmon branch exhibits prominent damping in the small momentum range, which can be attributed to the interaction between the top and bottom interfaces of the Pb(111)films. With the film thickness increasing, the critical momentum characterizing the damping in Pb(111) films decays not only much slower in Pb(111) films than in other metal films, and even in films with the thickness up to 40 monolayers the damping still exists. The slow decay of the surface plasmon damping, manifesting the strong quantum size effect in Pb(111) films, might be related to the strong nesting of the Fermi surface along the(111) direction.     

Quantum size effect on the diffusion barriers and growth morphology of Pb/Si(111)

An intriguing growth morphology of Pb islands on a Si(111) surface is observed in our STM experiments: the growth of a Pb layer on Pb islands with unstable heights starts from the periphery and moves towards the center, while the nucleation of the next layer on stable Pb islands starts away from the periphery. Using first-principles total energy calculations, we have studied the diffusion barriers of Pb adatoms on a freestanding Pb(111) film as a function of film thickness. The diffusion barriers are found to be very low (<60 meV), and a bi-layer oscillation due to the quantum size effect (QSE) is observed, with a lower barrier on the odd-layered, relatively unstable Pb films. The diffusion barrier difference between the odd- and even-layered film is as large as 40 meV. The observed unusual growth can be attributed to this big difference in the diffusion barriers due to QSE.     

Oscillatory electron phonon coupling in Pb/Si（111）deduced by temperature-dependent quantum well states

Photoemission study of atomically flat Pb films with a thickness from 15 to 24 monolayers （ML） have been performed within a temperature range 75-270K. Well-defined quantum well states （QWSs） are observed, which exhibit interesting temperature-dependent behaviours. The peak position of the QWSs shifts towards higher binding energy with increasing substrate temperature, whereas the peak width broadens linearly due to enhanced electron-phonon coupling strength （λ）. An oscillatory A with a period of 2ML is deduced. Preliminary analysis shows that the oscillation can be explained in terms of the interface induced phase variations, and is thus a manifestation of the quantum size effects.     

Quantum oscillations in Pb/Si (111) heterostructure system

This paper summarizes our recent work on the study of quantum size effects (QSE) and novel physical properties of the Pb/Si (111) heterostructure. Two different types of samples were investigated. One is wedge-shaped Pb islands, and the other is atomically flat Pb thin films. With scanning tunneling microscopy (STM) manipulation, we observed an intriguing morphology dynamics of the islands that swings between two extreme energy states, like that in a classical pendulum. We show that the dynamics is a result of the competition between the QSE and the classical step free energy minimizing effect. For the second type of the samples, the QSE is studied in terms of thickness-dependent film stability, electronic structure and physical properties by using STM, angle-resolved photoemission spectroscopy (ARPES) and transport measurement. The results consistently reveal the formation of quantum well states (QWS) due to electron confinement in the films. This size effect could greatly modify the electronic structure near the Fermi level and lead to quantum oscillations in superconductivity, electron-phonon coupling and thermal expansion. The work unambiguously demonstrates the possibility of quantum engineering of physical properties of thin films by exploiting well-controlled and thickness-dependent QSE.     

Imaging misfit dislocations in epitaxial CoSi2/Si(111) layers using quantum size microscopy

The tunneling microscope is used to excite electron standing waves in thin epitaxial layers of CoSi₂/Si(111). We observe misfit dislocation lines in topographic images that correlate with domain boundaries detected in conductance images, indicating that they separate regions of different cobalt disilicide thicknesses. These thickness transitions are expected to occur at interface steps in association with the introduction of partial dislocations for strain relief in this lattice mismatched system.     

Exchanges between Si and Pb adatoms on Si(111)

Real-time observation by high-temperature scanning tunneling microscopy of exchanges between Si and Pb atoms on a Si(111)-√3 × √3 surface is reported. The exchange rate is obtained as a function of the temperature. The activation energy of the exchange is about 1.2 eV, and the prefactor, shown to depend on the Pb coverage, is from 2 × 10¹⁰ to 8 × 10¹¹ s⁻¹. This prefactor is much larger than that for the exchange between Pb and Ge adatoms on a Ge(111)-c(2 × 8) surface, indicating that the adatom arrangement greatly influences the exchange mechanism. We also report that metastable 9 × 9 reconstruction appears during Pb desorption.     

"Devil's staircase" in Pb/Si(111) ordered phases

With scanning tunneling microscopy we have found that ordered phases in Pb/Si(111) are one of the best examples of the "devil's staircase" phase diagram. Phases within a narrow coverage range (1.2相似文献   

Electronic properties and atomic arrangement of the Ag/Si(111) interface

Variations of the work function and photoelectric yield spectra of a Ag/Si(111) system were investigated as a function of Ag film thickness and substrate temperatures. It was clarified that monolayer deposition of Ag onto Si at room temperature cause a decrease in the work function, while the deposition at 500°C did an increase. The results could be closely correlated with the atomic arrangement derived from low-energy ion scattering spectroscopy and low-energy electron diffraction.     

Photoemission study of the growth of the NdF3/Si(111) interface

Photoemission spectroscopy with synchrotron radiation was used to study the NdF₃/Si(111) interface as a function of annealing temperature for NdF₃ films. These films range in thickness from 1–20 monolayers and were deposited at room temperature. Without annealing, both F-Si and Nd-Si bonding is observed, indicating that the planar triangular NdF₃ molecules lie flat on the Si(111) substrate. At annealing temperatures between 400 and 500° C, the NdF₃/Si(111) interface is dominated by Nd-Si bonding as evidenced from a line-shape analysis of the Si 2 p and Nd 4 f core levels. By resonant excitation of the giant 4 d-4 f absorption resonance, the photoemission signal from the partially occupied 4 f orbitals is enhanced and can be distinguished from the photoemission signal of the overlapping F 2 p valence band. At higher temperatures F is completely lost due to the decomposition of NdF₃.     

Low-temperature ultrafast mobility in systems with long-range repulsive interactions: Pb/Si(111)

A realization of the numerous phases predicted in systems with long-range repulsive interactions was recently found in Pb/Si(111). Surprisingly, these numerous phases can be grown at low temperatures approximately 40 K over macroscopic distances. This unusual observation can be explained from theoretical calculations of the collective diffusion coefficient D(c) in systems with long-range repulsive interactions. Instead of a gradual dependence of D(c) on coverage, it was found that D(c) has sharp maxima at low temperatures for every stable phase (i.e., for every rational value of the coverage theta=p/q) in agreement with the experiment.