Nonlinear optical properties of a hydrogenic donor quantum dot

A investigation of the nonlinear optical properties of a hydrogenic donor in a disc-like parabolic quantum dot has been performed by using the matrix diagonalization method. The optical absorption coefficient between the ground (L=0) and the first excited state (L=1) have been examined based on the computed energies and wave functions. The results are presented as a function of the incident photon energy for the different values of the incident optical intensity and the confinement strength. We found the total optical absorption coefficient is strongly affected by the incident optical intensity and the confinement strength.     

Polarizability of a hydrogenic donor impurity in a ridge quantum wire

We use in this paper the variational method to calculate the polarizability of a hydrogenic donor impurity, in the presence of electric field, in a V-groove GaAs/Al_xGa_1−xAs quantum wire. The carrier ground states are analytically obtained by an effective potential scheme together with a suitable coordinate transformation that allows the decoupling of the two-dimensional Schrodinger equation. According to the results obtained from the present work for polarizability and binding energy reveals that the impurity position and field direction play important roles.     

Comparison of external electric and magnetic fields effect on binding energy of hydrogenic donor impurity in different shaped quantum wells

The effects of external electric and magnetic fields on the ground state binding energy of hydrogenic donor impurity are compared in square, V-shaped, and parabolic quantum wells. With the effective-mass envelope-function approximation theory, the ground state binding energies of hydrogenic donor impurity in InGaAsP/InP QWs are calculated through the plane wave basis method. The results indicate that as the quantum well width increases, the binding energy changes most fast in SQW. When the well width is fixed, the binding energy is the largest in VQW for the donor impurity located near the center of QWs. For the smaller and larger well width, the electric field effect on binding energy is the most significant in VQW and SQW, respectively. The magnetic field effect on binding energy is the most significant in VQW. The combined effects of electric and magnetic fields on the binding energy of hydrogenic donor impurity are qualitative consistent in different shaped QWs.     

Binding energy of an off-center hydrogenic donor in a spherical Gaussian quantum dot

The energy levels of an off-center hydrogenic donor confined by a spherical Gaussian potential have been calculated as a function of the potential radius for different donor position by exact diagonalization method. The results have clearly demonstrated the so-called quantum size effect. The binding energy is dependent on the dot radius R, the impurity ion distance D, and the confining potential depth V₀.     

Linear and nonlinear optical properties of a hydrogenic donor in lens-shaped quantum dots

Optical transitions in a Lens-Shaped Quantum Dot (LSD) are investigated in the presence of a hydrogenic impurity. The electronic wave functions are obtained analytically and the energy eigenvalues are calculated numerically. The density matrix formulation with the intersubband relaxation are used to evaluate the (linear and third order nonlinear) absorption coefficient (AC) and the change in the refractive indices (RI) analytically. The effect of the size of the LSD and optical intensity on the AC and RI are investigated. It is found that AC and RI are strongly affected by the optical intensity and the size of the LSD.     

Phase dependence of cross-phase modulation in asymmetric quantum wells

We study the Kerr nonlinearity associated with cross-phase modulation based on electromagnetically induced transparency in asymmetric double quantum wells. It is shown that, different from atomic system, not only the nonlinear dispersion and absorption but also the linear absorption depends on the relative phase of the laser fields because of the Fano interference. By choosing the parameters appropriately, large cross-phase modulation with nearly vanishing two-photon absorption, even π phase shift with single photon level, could be achieved in the asymmetric quantum wells.     

The binding energy of a shallow donor in type-II quantum wells

The binding energy of a shallow donor in type-II quantum wells was calculated by a variational method, using a single parameter. A type-II AlAs/GaAs single quantum well was chosen to calculate the binding energy of a shallow donor as a function of the donor position and the barrier width.     

Spectral line broadening in quantum wells due to Coulomb interaction of current carriers

A theoretical analysis of emission line broadening due to Coulomb interaction of carriers is performed. An analytical approximation for the spectral line shape function with exponential decays is derived by using the perturbation theory for many-body electron–hole systems for both non-degenerate and degenerate conditions. An explanation of the experimentally observed spectral line asymmetry and the linewidth change as a function of the temperature and the excitation level is given.     

Electric field modulation of valence band mixing in semiconductor quantum wells

Eigenstates and transition probabilities in a GaAs---Ga_1−xAl_xAs. single quantum well in the presence of an external electric field are computed by means of a tight-binding approach. The field changes the energy levels allowing for the mixing between different states. Special attention is paid to second and third valence band levels at k = 0 where mixing effects become crucial.     

Laser effects on the donor states in V-shaped and inverse V-shaped quantum wells

Laser effects on the electronic states in GaAs/ Ga_1−xAl_xAs V-shaped and inverse V-shaped quantum wells under a static electric field are studied using the transfer matrix method. The dependence of the donor binding energy on the laser field strength and the density of states associated with the impurity is also calculated. It is demonstrated that in inverse V-shaped quantum wells under electric fields, with an asymmetric distribution of the electron density, the position of the binding energy maximum versus the impurity location in the structure can be adjusted by the intensity of the laser field. This effect could be used to tune the electronic levels in quantum wells operating under electric and laser fields without modifying the physical size of the structures.     

Hydrostatic pressure effect on the donor impurity states in asymmetric multiple quantum wells

Based on the effective-mass approximation, hydrostatic pressure effect on the donor binding energy in zinc blende (ZB) InGaN/GaN asymmetric multiple quantum wells (AMQWs) is investigated variationally. Numerical results show that the hydrostatic pressure increases the donor binding energy for any impurity position. Moreover, the hydrostatic pressure effect is more noticeable if the impurity is localized inside the wide well of the AMQWs. For any hydrostatic pressure, the donor binding energy is distributed asymmetrically with respect to the center of the AMQWs. In particular, the donor binding energy of impurity located at the center of the wide well of the AMQWs is insensitive to the increment of the inter-well barrier width if the inter-well barrier width is large.     

Rashba spin-orbit splitting energy of a pressure induced hydrogenic donor impurity in a corrugated quantum well

Pressure induced hydrogenic donor impurity of ground and excited state in a GaAlAs/GaAs/GaAlAs corrugated quantum well is investigated. The calculations have been carried out using variational technique within the single band effective mass approximation taking into account the anisotropy and the corrections due to the conduction band nonparabolicity. The energy dependent effective mass and the position dependent quantity (Rashba spin-orbit splitting energy) are introduced to obtain the binding energy as a function of well width in the influence of pressure. The obtained results are compared with the other existing literature available.     

Magnetic field induced diamagnetic susceptibility of a hydrogenic donor in a GaN/AlGaN quantum dot

The binding energies of a hydrogenic donor in a GaN/AlGaN quantum dot are calculated in the influence of magnetic field. The calculations are carried out using the single-band effective mass approximation within a variational scheme. The magnetic field induced binding energy and diamagnetic susceptibility of the hydrogenic donor are obtained as a function of dot radius. Calculations have been carried out with and without the Zeeman effect through the energy-dependent effective mass. The diamagnetic shift of the hydrogenic donor is found for different dot radii. Our results show that (i) the binding energy is higher for smaller dot radii and the magnetic field effects are predominant for larger dot sizes, (ii) the binding energy is higher when the Zeeman effect is included for all the magnetic fields, (iii) the diamagnetic susceptibility increases with the magnetic field and is not pronounced for smaller dot radii and (iv) the diamagnetic shift has a good influence of larger dot radii.     

Diffusion thermopower due to interface roughness-induced piezoelectric scattering in lattice-mismatched semiconductor quantum wells

We calculate the diffusion thermopower for a degenerate two-dimensional electron gas in real lattice-mismatched semiconductor quantum wells (QWs) at low temperatures. We consider explicitly two scattering mechanisms: (i) the surface roughness-induced piezoelectric effect, a new important scattering source, arising due to a large fluctuating density of roughness-induced piezoelectric charges and (ii) the surface roughness. The scattering parameter p of energy dependence of the momentum relaxation time and the diffusion thermopower S^d, of each of the mechanisms separately and also when both the mechanisms are combined, are calculated as a function of electron concentration and well width. The diffusion thermopower, as a function of electron concentration, due to piezoelectric field shows a change in sign for lower concentrations. Interestingly, the diffusion thermopower, due to this mechanism, as a function of well width also shows a change in sign and it is dominant for larger well widths. The numerical calculations are presented for In_0.2Ga_0.8As/GaAs and AlN/GaN QWs. The piezoelectric mechanism is expected to be very important in systems with large piezoelectric constant and lattice mismatch.