Photoacoustic characteristics of dynamical adhesion of films on a metallic substrate

In this communication, we report a numerical model that predicts the mechanical deformations associated with the pulsed laser irradiation of a film surface, based on thermal diffusion theory. The model is consequently advanced to produce a method for evaluating film adhesion strength. The epicenter surface displacements within the irradiated fields have been measured using a heterodyne interferometer. The comparison of the experimental data and the displacements calculated by the model shows good agreement. By investigating the propagating acoustic modes under non-destructive and destructive modes, we reveal that, with or without interface delamination, the phase structure of the longitudinal waves will be altered due to the change of reflection mode at the interface. Applying shock dynamics theory, we evaluate the adhesion strength of the TiN/stainless interface. We also indicate the strain rate can be up to 10⁵∼10⁶ s^-1 during film interface delamination. Received: 5 April 2002 / Accepted: 24 June 2002 / Published online: 26 February 2003 RID="*" ID="*"Corresponding author. Fax: +86-511/879-1919, E-mail: mzhou@ujs.edu.cn     

Laser-irradiated thermodynamic behaviors of spallation and recombination at solid-state interface

A microscopic insight of interfacial spallation and recombination behaviors at multilayer thin-film interface induced by incident femtosecond pulsed laser is presented in this paper. Such two different aforementioned behaviors are investigated via the thermodynamic trajectories obtained by using standard Lennard-Jones (L-J) molecular dynamics (MD) simulation. Based on the simulation results, the interfacial damages of multilayer thin film are dominated by a critical threshold that induces an extraordinary expansive dynamics and phase transitions leading to the structural softened and tensile spallation at interface. The critical damage threshold is evaluated at around 8.5 J/m² which governs the possible occurrence of two different regimes, i.e. interfacial spallaiton and recombination. In interfacial damage region, quasi-isothermal thermodynamic trajectories can be observed after the interfacial spallation occurs. Moreover, the result of thermodynamic trajectories analyses indicates that, the relaxation of pressure wave may cause the over-heated interfacial zone to reduce volumetric density, thus leading to structural softness and even weaken interfacial structural strength. The crucial effect leading to the phenomenon of low tension spallation is identified.     

In-Situ Intrinsic Interface Strength Measurement at Elevated Temperatures and its Relationship to Interfacial Structure

A previously developed laser spallation technique has been modified to measure the tensile strength of thin film interfaces in-situ at temperatures up to 1100°C. Tensile strengths of Nb/A-plane sapphire, FeCrAl/A-plane sapphire and FeCrAlY/A-plane sapphire were measured up to 950°C. The measured strengths at high temperatures were substantially lower compared with their corresponding strengths at ambient temperature. For example, at 850°C, the interface tensile strength for the Nb/sapphire (151 ± 17 MPa), FeCrAl/sapphire (62 ± 8 MPa) and FeCrAlY/sapphire (82 ± 11 MPa) interface systems were lower by factors of approximately, 3, 5, and 8, respectively, over their corresponding ambient values. These results underscore the importance of using such in-situ measured values under operating conditions as the failure criterion in any life prediction or reliability models of such coated systems where local interface temperature excursions are expected. The results on alloy film interfaces also demonstrate that the presence of Y increases the strength of FeCrAl/Al₂O₃ interfaces.     

Micro-punching process based on spallation delamination induced by laser driven-flyer

In this article, we proposed a micro-punching process for microstructure on films based on laser driven-flyer induced spallation delamination phenomenon at the interface between a film and its substrate. To validate such a micro-punching process, a series of experiments were carried out for fabrication of microstructures on Au films coated on K9 glass substrates and polyimide substrate. Results show that through such a punching process, the microstructure on Au films can be fabricated efficiently and the spatial resolution is able to reach micron level. Moreover, we found that this method was more suitable for films coated on soft substrates rather than that coated on brittle substrates due to the additional destruction of the brittle substrate. This micro-punching process has a wide range of potential application in microfluidic devices, biodevices and other MEMS devices.     

Vapor Pressure Assisted Void Growth and Cracking of Polymeric Films and Interfaces

Pores and cavities form at filler particle-polymer matrix interfaces, at polymer film-silicon substrate interfaces as well as in molding compounds of IC packages. Moisture diffuses to these voids. During reflow soldering, surface mount plastic encapsulated devices are exposed to temperatures between 210 to 260°C. At these temperatures, the condensed moisture vaporizes. The rapidly expanding water vapor can create internal pressures within the voids that reach 3–6 MPa. These levels are comparable to the yield strengths of epoxy molding compounds and epoxy adhesives, whose glass transition temperatures T _g range between 150 to 300°C. Under the combined action of thermal stress and high vapor pressure (relative to the yield strength at T _g), both pre-existing and newly nucleated voids grow rapidly and coalesce. In extreme situations, vapor pressure alone could drive voids to grow and coalesce unstably causing film rupture, film-substrate interface delamination and cracking of the plastic package.Vapor pressure effects on void growth have been incorporated into Gurson's porous material model and a cohesive law. Crack growth resistance-curve calculations using these models show that high vapor pressure combined with high porosity bring about severe reduction in the fracture toughness. In some cases, high vapor pressure accelerates void growth and coalescence resulting in brittle-like interface delamination. Vapor pressure also contributes a strong tensile mode component to an otherwise shear dominated interface loading. An example of vapor pressure related IC package failure, known as popcorn cracking, is discussed.     

Growth of stoichiometric and textured LiNbO3 films on Si by pulsed laser deposition

Laser ablation of single-crystal LiNbO₃ in a gas environment is used to grow films on (100) Si substrates heated to 650 °C. The film composition and crystallinity are studied as a function of the nature (reactive, O₂, or inert, Ar) and pressure of the gas environment applied during deposition and cooling-down processes, the laser energy density and the target–substrate distance. Experimental results show that a gas pressure close to 1 mbar is required to produce stoichiometric films in either O₂ or Ar. The modification of the laser energy density and the target–substrate distance allows us to improve the crystallinity of the films that become textured along the (006) direction. The influence of the experimental parameters on the film properties is discussed in the frame of the formation of a blast wave, that leads to the focusing of the expanding Li species and thus, to the increase of the Li content in the films. Received: 8 February 2001 / Accepted: 9 February 2001 / Published online: 3 May 2001     

质子入射散裂产物理论研究方法探讨

简要介绍了几种关于中高能质子入射引起散裂反应产物理论计算的方法,以及这些方法的最新发展.比较了这些方法在理论计算中的特点,指出经典外推方法有局限性,量子分子动力学方法和改进后的M C方法的计算结果与实验数据有较好的符合,但是计算量大,而且量子分子动力学方法在与宏观输运理论连接上存在不少的困难.半经验计算方法已经取得了初步的成果,需要根据新的实验结果来对其进行发展. The analysis on spallation product of proton-induced reaction with intermediate energy has important applications, such as astrophysics, biophysics, spallation neutron source, and accelerator-driven system (ADS) etc. In recent year, some theoretical models have been developed to investigate this reaction processes. At present work, we introduce the extrapolated classic theory, the quantum molecule dynamic (QMD) plus statistical decay and fission models, the method of Mento-Carlo and Smiempirical method for...     

Amorphization and grain size effect on milled PbTiO3 studied by Raman scattering and visible photoluminescence emission

Raman scattering and photoluminescence (PL) studies on milled PbTiO₃ are presented in this paper. The results suggest that the visible PL emission could be related to both the localized states in the interface between the amorphous layer and the crystalline core and the amorphous layer itself. The Raman spectrum of PbTiO₃ milled for a long time showed the vibrational density of states, and a detailed analysis of the soft mode allowed us to conclude that the PbTiO₃ crystalline core did not experience any structural phasetransition. Received: 2 February 2001 / Accepted: 23 July 2001 / Published online: 17 October 2001     

Surface modification of a polymer film by cryogenic laser ablation of organosilicon compounds

An organosilicon compound, hexamethylcyclotrisilazane (HMCTS), was photolyzed in a solid film at 84 K with an ArF excimer laser. A polymeric film was prepared as a result of polymerization and/or crosslinking using a reactive species such as 1-(methylsilyl)methanimine, generated by photolysis. At room temperature in air, the film changed into a polymer having siloxane units. However, fragments generated by laser irradiation of HMCTS in the frozen film made a similar polymer film having a siloxane structure on a PVA film in air. The polymeric film with siloxane units prepared by the cryogenic laser ablation method displayed hydrophobic properties. Received: 23 May 2001 / Accepted: 30 May 2001 / Published online: 30 August 2001     

Microscopic spallation mechanisms induced by a pulse laser at the solid-state interface

This paper presents a study of the transient behavior of structural dynamics and the associated innovatory microscopic spallation mechanism at the solid-state interface, induced by an incident femtosecond pulse laser. By detailed structural dynamic analysis, using the technique of molecular dynamics simulation, the spallation mechanism at the solid–solid interface is observed. The occurrence of structural spallation is mainly characterized by extraordinary expansion dynamics and tensile stress that induces interior structural void defect coalescence, eventually leading to cracking. The microscopic phenomenon of moderate ductile fracturing at the solid–solid interface is identified. A high strain rate in the order of 10⁹ s^-1 is observed. Both aforementioned phenomena are analogous to the experimental results of metal-film spallation excited by a pulse laser. Moreover, it is also shown that the critical value of the stain rate is one of the dominant factors that influences the occurrence and mechanism of structural spallation. The results of simulations reveal that the thin-film structure is safe if the strain rate is below certain critical values. The critical damage threshold is evaluated and technical suggestions to avoid interfacial fracture are also presented. PACS 02.70.Ns; 42.62.-b; 64.60.Ht; 61.72.Cc; 64.60.-i     

Short-laser-pulse-driven emission of energetic ions into a solid target from a surface layer spalled by a laser prepulse

An efficient emission of picosecond bunches of energetic protons and carbon ions from a thin layer spalled from a organic solid by a laser prepulse is demonstrated numerically. We combine the molecular dynamics technique and multi-component collisional particle-in-cell method with plasma ionization to simulate the laser spallation and ejection of a thin (∼20–30 nm) solid layer from an organic target and its further interaction with an intense femtosecond laser pulse. In spite of its small thickness, a layer produced by laser spallation efficiently absorbs ultrashort laser pulses with the generation of hot electrons that convert their energy to ion energy. The efficiency of the conversion of the laser energy to ions can be as high as 20%, and 10% to MeV ions. A transient electrostatic field created between the layer and surface of the target is up to 10 GV/cm. Received: 13 March 2001 / Accepted: 20 March 2001 / Published online: 20 June 2001     

超短激光诱导金属薄膜后向层裂的分子动力学模拟

 采用结合双温模型的分子动力学方法详尽描述了应力约束区域内部金属薄膜后向层裂的动力学过程。与辐照表面在激光加热作用下机械稳定性受到强烈影响而发生的前向喷射不同，后向层裂是冷材料的断裂。分析了层裂机制，得出靶材是在卸载波及被反射的压力波的共同作用下发生层裂;探讨了激光诱导压力波的传播规律，预测了不同靶厚下的层裂厚度及其对层裂开始时间的影响。     

Polymer thin films and surfaces: Possible effects of capillary waves

It is discussed how the proximity of a free surface or mobile interface may affect the strain relaxation behavior in a viscoelastic material, such as a polymer melt. The eigenmodes of a viscoelastic film are thus derived, and applied in an attempt to explain the experimentally observed substantial shift of the glass transition temperature of sufficiently thin polymer films with respect to the bulk. Based on the idea that the polymer freezes due to memory effects in the material, and exploiting results from mode-coupling theory, the experimental findings of several independent groups can be accounted for quantitatively, with the elastic modulus at the glass transition temperature as the only fitting parameter. The model is finally applied discussing the possibility of polymer surface melting. A surface molten layer is predicted to exist, with a thickness diverging as the inverse of the reduced temperature. A simple model of thin polymer film freezing emerges which accounts for all features observed experimentally so far. Received 8 August 2001     

Growth of completely (110)-oriented Pt film on Si (100) by using MgO as a buffer by pulsed laser deposition

(110)-textured MgO films were grown on Si (100) with etching and without etching by pulsed laser deposition. The deposited MgO films were shown to be droplets-free. The MgO film was used as a buffer layer to further grow Pt film on Si (100). A completely (110)-oriented Pt film was obtained on such a buffer layer and its surface is very smooth with a roughness of about 7.5 nm over 5×5 μm. This can be used as a new oriented Pt electrode on silicon for devices. Received: 23 January 2001 / Accepted: 27 April 2001 / Published online: 27 June 2001     

Simulating percolating behavior of conductive particles in anisotropically conductive composite films

A numerical scheme is developed to simulate the percolating behavior of conductive particles within a non-conductive matrix film with a preferential alignment of particles achieved via externally imposed deterministic driving forces. The sharp transition from non-conducting to conducting of the composite film is successfully revealed with the model. The percolation behavior is studied in terms of four percolation parameters, including the percolation probability, the normalized shortest percolation path, normalized gyration radius and density of the percolation cluster, subject to variation in five important system parameters. These include particle concentration, relative importance of the externally applied force, film thickness, film width and particle size. The threshold particle concentration can be reduced by increasing the strength of the deterministic driving force, decreasing film thickness, increasing film width or using smaller size particles. Our study suggests that using stronger applied force for wider and thinner films containing smaller particles may be a good practice to obtain anisotropically conductive films with a light particle loading that possess good conduction capability in the thickness direction and good insulation in the planar direction. Received: 19 February 2001 / Accepted: 30 May 2001 / Published online: 30 August 2001     

Studies on distribution of element contents in transient layer at interface between boron-doped diamond film electrode and tantalum substrate

The boron-doped diamond film (BDD) grown on tantalum (Ta) substrate as an electrode (BDD/Ta) was prepared by hot filament chemical vapor deposition method. The experimental results demonstrated that our BDD/Ta had high current efficiency, strong ability to degrade wastewater, good corrosion stability and long lifetime. These excellent characteristics of BDD/Ta have been explained in terms of Rutherford backscattering (RBS) experiments. RBS investigation revealed that the continuous transient layer at the interface between boron-doped diamond film and Ta-substrate was formed and the microstructure of the continuous transient layer given by the continuous distribution of all element contents at the interface was obtained. The thicknesses of boron-doped diamond film and the continuous transient layer were about equal to 8000 × 10¹⁵ atoms/cm² and 5800 × 10¹⁵ atoms/cm², respectively. The formation of the continuous transient layer at the interface can eliminate the mismatch of thermal expansion coefficients (TEC) at the interface and only lead to the slow change of TEC because of the continuous distribution of element contents of the film and substrate in the transient layer at the interface. Thus, there is no residual stress to concentrate on the interface and the stress-corrosion delamination of the film disappears. Therefore, the corrosion stability and lifetime of BDD/Ta increase and last well, that have been verified by X-ray diffraction (XRD) experiments.     

Mechanical and optical properties of CNx films with high N/C ratio

Nitrogen-rich carbon nitride films were prepared by three different deposition methods on fused silica, stainless steel and silicon cantilever substrates. Their optical properties were studied by spectroscopic ellipsometry and UV spectrometry. Mechanical properties such as plastic and Vickers microhardness, Young’s modulus, adhesion and film stress were also tested. The results were compared with the properties of films with lower nitrogen concentrations. Received: 26 January 2001 / Accepted: 29 January 2001 / Published online: 3 May 2001     

Damage mechanism and morphology characteristics of chromium film in femtosecond laser rear-side ablation

In this paper, damage mechanism and morphology characteristics of chromium film in femtosecond laser rear-side ablation are investigated. The film removing process includes two key sub-processes: the laser ablation dynamic process and subsequent breaking and ejecting dynamic process. Film morphology in rear-side ablation is determined by the interrelation between the laser energy and the film strength. When lower laser energy is used, residual out-layer film is relative thick and tends to break into some large fragments, which results in an irregular ablation shape. While when higher pulse energy is used, thinner residual film with weaker break strength breaks into small fragments, the ablation quality improves correspondingly. Besides laser energy and film property, energy distribution of laser beam also affects the ablation quality. In experiments, this kind of effect is researched by changing the focal position. It is found that ripples, which are familiar nano-structures in front-side ablation, also exist in rear-side ablation. These ripples are formed initially at the interface between quartz substrate and film, and their coverage varies with the energy distribution. Additionally, increasing number of scans is an effective method to shorten the period of ripples.     

Electric field of a buried interfacial region measured by positron-lifetime spectroscopy

Positrons from a radioactive source are implanted into a reverse-biased metal–semiconductor contact and are drifted back towards the contact by the internal electric field where they trap into voids and annihilate. The electric field dependent interface annihilation fraction is monitored by way of the intensity of the long (∼400–500 ps) void lifetime component using positron-lifetime spectroscopy. Unlike previous analyses of such systems a numerical model involving positron drift, annihilation and trapping into the interfacial state has been constructed to describe the positron dynamics in the presence of the non-uniform junction electric field. The use of the positron-lifetime technique in probing the internal electric field at buried contacts is thus demonstrated. Results obtained using the numerical method for the Au, Al and Ni/Semi-Insulating (SI)-GaAs contact systems are found to be consistent with the findings of previous studies on the Au/SI-GaAs system. Received: 29 November 2000 / Accepted: 26 February 2001 / Published online: 25 July 2001     

A dispersionless Michelson interferometer for the characterization of attosecond pulses

A novel application of a free-standing transmission grating as a beam splitter in a Michelson-type interferometer is described. The arrangement can operate in the XUV and soft X-ray spectral region and, therefore, it is well suited for the characterization of attosecond pulses. Using ray-tracing codes, we have analyzed three different setups in which spherical mirrors are employed in conjunction with the transmission grating and have investigated in detail their dispersive characteristics. It is shown that such an arrangement can be made to exhibit group-delay dispersion of ∼1 as² while it provides two co-propagating and converging beams. Received: 12 October 2001 / Revised version: 17 December 2001 / Published online: 7 February 2002