Electrical resistivity of microinhomogeneous PdMnxFe1−x alloys

The electronic band-structure calculations of the PdFe ferromagnet and the PdMn antiferromagnet performed in this work permit one to conclude that the specific features of the electrical resistivity observed in the ternary PdMn_xFe_1−x alloy system [the deviation from the Nordheim-Kurnakov rule ρ₀(x)∼x(1−x), which is accompanied by a high maximum of residual resistivity (not typical of metals) ρ ₀ ^m ∼220 μΩ cm at x _C∼0.8 and a negative temperature resistivity coefficient in the interval 0.5≤x≤1] are due to the microinhomogeneous (multiphase) state of the alloys and a variation in the band-gap parameter d spectrum caused by antiferromagnetic ordering of a PdMn-type phase. __________ Translated from Fizika Tverdogo Tela, Vol. 44, No. 2, 2002, pp. 193–197. Original Russian Text Copyright ? 2002 by Kourov, Korotin, Volkova.     

X-ray magnetic circular dichroism at IrL2,3 edges in Fe100−x Ir x and Co100−x Ir x alloys: Magnetism of 5d electronic states

The formation of induced 5d magnetic moment on Ir in Fe_100−x Ir _x (x=3, 10 and 17) and Co_100−x Ir _x (x=5, 17, 25 and 32) alloys has been investigated by X-ray magnetic circular dichroism (XMCD) at Ir L_2,3 absorption edges. Sum rule analysis of the XMCD data show that the orbital moment of Ir is in the range of −0.071(2)μB to −0.030(1)μB in Fe-Ir alloys and −0.067(2)μB to 0.024(1)μB in Co-Ir alloys. We find that the total moment of Ir in Fe-Ir alloys is approximately 1/5 of the total 3d moment on Fe at all the three compositions. In contrast, the total moment on Ir in Co-Ir alloys varies between 1/6 to 1/16 of the 3d moment on cobalt. The observed trends of Ir moments and the role of interatomic exchange interactions in 5d moment formation are discussed.     

Magnetic and electrical properties of Mg1−x CuxO solid solutions and magnetic shielding in Cu-Mg1−x CuxO structures

Mg_1−x Cu_xO solid solutions having an NaCl structure with 0⩽x⩽0.20 are synthesized and Cu-Mg_1−x Cu_xO structures are prepared for superconductivity studies. The magnetic susceptibility χ, electron paramagnetic resonance (EPR), and electrical conductivity of the solid solutions are studied at temperatures of 5–550 K. It is shown that χ ⁻¹(T) obeys the Curie-Weiss law with a paramagnetic Curie temperature Θ close to zero and an effective magnetic moment μ _eff=1.9 μ _B, close to the 1.73 μ _B of a Cu²⁺ ion with spin S=1/2. The width ΔH of the EPR line depends weakly on temperature and increases as x is raised. The volume narrowing of the EPR linewidth ΔH is used to estimate the exchange interaction parameter, 3×10⁻⁴ eV. The g-factor is close to 2 and is temperature independent. The electrical conductivity of Mg_1−x Cu_xO at T=300 K is ≈10⁻¹¹–10⁻¹² Ω⁻¹ cm⁻¹ for x=0 and increases to 10⁻⁵–10⁻⁶ Ω⁻¹ cm⁻¹ for x=0.15–0.20. The conductivity is p-type. Magnetic shielding is observed in Cu-Mg_1−x Cu_xO structures with x=0.15 and 0.20. The possible connection of this phenomenon with interference superconductivity in the contact layer of the structure is discussed. Fiz. Tverd. Tela (St. Petersburg) 41, 293–296 (February 1999)     

An anomaly in the magnetic susceptibility of the Mg1−x CuxO solid solutions with 0.01≤x≤0.20

The problem of localized superconductivity has motivated the preparation of Mg_1−x Cu_xO solid solutions with NaCl structure and 0.01≤x≤0.20, as well as a study of the magnetization and magnetic susceptibility χ in the 2–400 K temperature range and in magnetic fields of up to 5 T. The temperature dependence of χ is described for all compositions by the Curie-Weiss law, χ = C/(T − θ), where the constant C is close to the value calculated for each composition for μ_eff = 1.7–1.9μ_B, and θ is close to zero. For T < 30 K, χ(T) deviates for all compositions toward lower χ, which can be attributed to magnetic ordering of exchange-coupled clusters in the solid solution. At T∼320–330 K, an anomaly of a diamagnetic type, i.e., a decrease of χ by 6–30% of its paramagnetic value, has been observed for all compositions against the background of the generally paramagnetic χ(T). A discussion is presented of alternative reasons for this anomaly and of its possible connection with localized superconductivity. __________ Translated from Fizika Tverdogo Tela, Vol. 42, No. 4, 2000, pp. 701–703. Original Russian Text Copyright ? 2000 by Samokhvalov, Arbuzova, Viglin, Naumov, Smolyak, Korolev, Lobachevskaya.     

Magnetoelectric effect and toroidal ordering in Ga2−x FexO3

The field dependence of the magnetoelectric effect and longitudinal magnetostriction of Ga_2−x Fe_xO₃ single crystals is studied in magnetic fields up to 200 kOe in the temperature range from 4.2 to 300 K. It is shown that the magnetoelectric effect in these materials is determined mainly by the toroidal moment T and is not related to magnetostriction, as was previously theorized. A new method for determining the toroidal moment by measuring the electric polarization in a strong magnetic field is proposed. The value of the toroidal moment of the unit cell in Ga_1.15Fe_0.85O₃ is calculated: T=(T _a ,0,0), where T _a =24.155μ _B Å per unit cell. Experimental data are analyzed using a theory of toroidal spin ordering, which gives good agreement with experiment. Zh. éksp. Teor. Fiz. 114, 263–272 (July 1998) Deceased.     

Anisotropy of electrical properties of lead doped extruded samples of Bi85Sb15

Thin films of Bi₈₅Sb₁₅ solid solution wich can be used in thermoelectric devices for cooling and stabilizing the temperature of Gann and Impatt diodes have been obtained by extrusion method. They have surface roughness in the range 10–80μm, dielectric lossestan δ ∼ 10⁻³ at 10 GHz, thermal conductivityβ ∼ 4x10² W / (M · K). Anisotropy of electroconductivityσ, thermoelectric powerα and Hall coefficientsR _H of lead doped extruded Bi₈₅Sb₁₅ samples has been investigated in the temperature range between 77 K and 300 K and in the presence of magnetic fieldH up to ∼ 74×10⁴ A/m. It is shown that the value and sign of the anisotropy coefficient essentially depend on heat treatment and impurity concentration. Experimental results are explained taking into account a crystal structure of Bi₈₅Sb₁₅, formation of texture and generation of deformation defects.     

Thermal and Auger processes in p-n junctions based on GaInAs/InAs and InAsSbP/InAs heterostructures

A study is made of the excess-energy relaxation processes and the mechanisms responsible for overheating of the active zone of infrared emitters made from nonisoperiodic structures with stressed InGaAs layers and from nearly isoperiodic InAsSbP structures and emitting in the wavelength range λ=2.5–5.0 μm are investigated. The relationship between the overheat ΔT of the active zone of the structure and Auger processes is established for In_1−x Ga_xAs infrared emitters. It is shown that the efficiency of Auger recombination decreases as x increases in the interval 0–0.09, promoting a sharp reduction in ΔT. At x>0.09 the efficiency of CHHS Auger processes decreases exponentially, but an increase in the density of dislocations due to the appreciable value (∼6.9%) of the lattice mismatch parameter causes ΔT to increase, but slowly. Zh. Tekh. Fiz. 67, 68–71 (September 1997) Deceased.     

Lithium ion conductivity of the B-site substitution in Li3xLa0.67−xRE y III Ti1−2yPyO3 system (REIII=Sc3+, Y3+, Nd3+, Sm3+, Eu3+, Yb3+)

The B-site substituted perovskite solid solution systems Li_3xLa_0.67−xRE_yTi_1−2yP_yO₃ (RE=Sc, Y, Nd, Sm, Eu, Yb) have been investigated. Perovskite solid solutions formed in the range of x=0.10, y<0.10 for RE=Sc³⁺, Y³⁺, Yb³⁺, x=0.10, y≤0.05 for RE=Nd³⁺, Sm³⁺, Eu³⁺. Li_0.3La_0.57Nd_0.05Ti_0.9P_0.05O₃ has the highest bulk conductivity of 4.31×10⁻⁴ S·cm⁻¹ and the highest total conductivity of 2.52×10⁻⁴ S·cm⁻¹ at room temperature in all prepared compositions. The compositions have low activation energies of about 24–30 kJ/mol in the temperature ranges of 298–523 K. SEM studies showed that the sample made by solid-state reaction has a sphere-like morphology and a rough particle with particle size of about 50 μm. The research results also indicated that the reaction temperature decreases and the electrochemical stabilities of the titanate-based perovskite-type solid solutions are improved by using RE³⁺ and P⁵⁺ replaced Ti⁴⁺ on B-site in the Li_3xLa_0.67−xTiO₃ parent.     

Investigation of acceptor centers in semiconductors with the diamond crystal structure by the μ − SR method

The residual polarization of negative muons in crystal silicon samples with phosphorus (P: 1.6×10¹³ cm⁻³) and antimony (Sb: 2×10¹⁸ cm⁻³) impurities is investigated. The measurements are made in a 1000 G magnetic field oriented in a direction transverse to the muon spin in the temperature range 4–300 K. The relaxation rate and shift of the precession frequency in the silicon sample with the phosphorus impurity are measured more accurately than previously. It is found that in antimony-doped silicon the acceptor center _μ A1 at temperatures below 30 K can be in both ionized and neutral states. The experimental data are interpreted on the basis of spin-lattice relaxation of the magnetic moment of an acceptor center, formation of acceptor-donor pairs, and recombination of charge carriers at the acceptor. Preliminary measurements showed a nonzero residual polarization of negative muons in germanium. Pis’ma Zh. éksp. Teor. Fiz. 68, No. 1, 61–66 (10 July 1998)     

Measurement of the differential and integral distribution of diffuse x-ray scattering intensity from defects in thin strained layers

Double-and triple-crystal diffractometry have been used to study structural perfection of a ∼1 μm-thick Ga_1−x In_xSb_1−y As_y epitaxial film (x=0.9, y=0.8) on GaSb. It is shown that scattering from samples of this system can be divided into coherent and diffuse. The arrangement of reciprocal-lattice points of the film and substrate in the two-dimensional intensity distribution for asymmetrical reflections argues for the absence of elastic-strain relaxation. No dislocation networks are formed, and the diffuse scattering is produced by Coulomb-type defects. Localization of diffuse scattering in reciprocal space suggests that these defects reside in the epitaxial film. The diffuse-scattering distribution in asymmetrical reflections is shown to be anomalous; namely, it extends in a direction parallel to the surface and is split into two maxima. Schemes have been proposed and realized for measuring integral distributions of diffracted intensity along the surface and perpendicular to it, and their potential for studying diffuse scattering from defects is explored. Fiz. Tverd. Tela (St. Petersburg) 39, 1188–1193 (July 1997)     

Electron-correlation-induced band renormalization and Mott transition in Ca1-xSrxVO3

We present the local density approximate+Gutzwiller results for the electronic structure of Ca_1-xSr_xVO₃. The substitution of Sr²⁺ by Ca²⁺ reduces the bandwidth, as the V—O—V bond angle decreases from 180° for SrVO₃ to about 160° for CaVO₃. However, we find that the bandwidth decrease induced by the V—O—V bond angle decrease is smaller as compared to that induced by electron correlation. In correlated electron systems, such as Ca_1-xSr_xVO₃, the correlation effect of 3d electrons plays a leading role in determining the bandwidth. The electron correlation effect and crystal field splitting collaboratively determine whether the compounds will be in a metal state or in a Mott-insulator phase.     

The dynamics of accumulation of electrically active radiation defects on implantation of graded-band-gap HgCdTe films grown by MBE

The dynamics of accumulation of electrically active radiation defects under ion doping of epitaxial Cd _x Hg _1−x Te films is studied for various distributions of film composition in the implantation region. The epitaxial films were irradiated by boron ions at room temperature in the continuous regime, with the dose ranging within 10¹¹−3·10¹⁵ cm⁻², energy — 20–150 keV, and ion current density — j = 0.001–0.2 μA·cm⁻². It is found that the natural logarithm of the introduction rate of electrically active radiation defects linearly depends on the epitaxial-film composition in the range of mean projected path of implanted ions. An analysis of the experimental data shows that the dynamics of accumulation of electrically active radiation defects is determined by the epitaxial-film composition in the implantation region. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 9, pp. 25–28, September, 2006.     

Scalar-leptoquark contributions to the neutrino magnetic moment

On the basis of astrophysical data on the neutrino magnetic moment, μ _ν < 3 × 10⁻¹² μ _B , constraints on the scalar-leptoquark masses are found within the minimal model involving four-color symmetry. It is shown that data on the neutrino magnetic moment are compatible with the mixing-parameter range that admits the existence of scalar leptoquarks whose masses are below 1 TeV, reaching experimental limits obtained from direct searches. In the case of mass degeneracy for the scalar leptoquarks S _m of electric charge Q = 2/3, the constraint m _{S m} > 330 GeV is obtained, which is independent of the mixing parameters of the model. The results are compared with the predictions of other leptoquark models. Original Russian Text ? A.V. Povarov, 2007, published in Yadernaya Fizika, 2007, Vol. 70, No. 5, pp. 905–911.     

Piezobirefringence in γ1-(GaxIn1−x )2Se3 single crystals

The piezobirefringence of uniaxial γ₁-(Ga_xIn_1−x )₂Se₃ crystals (x=0.3, 0.4) was investigated in the spectral range 0.6–1.1 μm at temperatures from 77 to 295 K. It is shown that uniaxial compression leads to a linear decrease in the birefringence, whereas a decrease in temperature reduces the effect of piezobirefringence. The baric changes in the birefringence are attributed to the baric changes in the contribution of the edge transitions to the total birefringence. __________ Translated from Optika i Spektroskopiya, Vol. 95, No. 3, 2003, pp. 458–461. Original Russian Text Copyright ? 2003 by Studenyak, Kran’chets, Suslikov, Kovach.     

Study of the thermal properties of Ba1−x SrxTiO3 thin films by the ac hot-probe method

The heat capacity and heat conductivity of Ba_1−x Sr_xTiO₃ (x=0.2, 0.5, 0.8) polycrystalline films 1.5–2.0 μm thick on a massive substrate have been studied by the ac hot-probe method for three-layer systems (conducting probe-dielectric film-substrate) at temperatures ranging from 100 to 400 K. It is found that the thermal properties exhibit anomalies in the phase transition range. __________ Translated from Fizika Tverdogo Tela, Vol. 42, No. 10, 2000, pp. 1839–1841. Original Russian Text Copyright ? 2000 by Davitadze, Kravchun, Strukov, Taraskin, Gol’tsman, Lemanov, Shul’man.     

Frequency dispersion of dielectric coefficients of layered TlGaS<Subscript>2</Subscript> single crystals

Frequency dependence of the dissipation factor tanδ, the permittivity ɛ, and the ac conductivity σ_ac across the layers in the frequency range f=5×10⁴−3×10⁷ Hz was studied in layered TlGaS₂ single crystals. A significant dispersion in tanδ was observed in the frequency range 10⁶−3×10⁷ Hz. In the range of frequencies studied, the permittivity of TlGaS₂ samples varied from 26 to 30. In the frequency range 5×10⁴−10⁶ Hz, the ac conductivity obeyed the f ^0.8 law, whereas for f>10⁶ Hz σ_ac was proportional to f ². It was established that the mechanism of the ac charge transport across the layers in TlGaS₂ single crystals in the frequency range 5×10⁴−10⁶ Hz is hopping over localized states near the Fermi level. Estimations yielded the following values of the parameters: the density of states at the Fermi level N _F=2.1×10¹⁸ eV⁻¹ cm⁻³, the average time of charge carrier hopping between localized states τ=2 μs, and the average hopping distance R=103 ?. __________ Translated from Fizika Tverdogo Tela, Vol. 46, No. 6, 2004, pp. 979–981. Original Russian Text Copyright ? 2004 by Mustafaeva.     

Thin film solid oxide fuel cells

We have investigated the deposition of 91% ZrO₂ − 9% Y₂O₃ thin films by a variety of sputtering techniques for the application as electrolytes in thin film solid oxide fuel cells. The deposition by RF sputtering was accomplished by using an oxide target of the desired composition. The deposition rate in these initial tests was limited to 0.5 μm/hr and the morphology of the film was substantially modified by deposition rate and substrate temperature. Using DC magnetron sputtering we deposited metallic films from a metallic target with the desired chemical composition. We introduced oxygen into the sputtering chamber to reactively deposit the desired 91% ZrO₂ − 9% Y₂O₃ thin films; however, we encountered problems with target oxidation and growth rate reproducibility. We subsequently demonstrated that controlled oxidation of the metallic films could result in adhering, non porous yttria stabilized zirconia films. Paper presented at the 3rd Euroconference on Solid State Ionics, Teulada, Sardinia, Italy, Sept. 15–22, 1996     

Model of current and optical conductivity switching in YBa2Cu3O7−x films

A model is proposed for the thermal and electrical responses of films of the high-T _c superconducting material YBa₂Cu₃O7_7−x to current and optical pulses. Numerical calculations are compared with experimental data for current pulses of duration 100 μs and laser pulses of duration 0.1 ns; this yields improved data on the thermal conductivity of thin YBa₂Cu₃O7_7−x films (1.5–2 W/m·K) and thermal resistance of the film-substrate contact (5×10⁻⁸m²·K/W) in the neighborhood of the superconducting transition. This model can be used for optimizing the film structure parameters and control regimes for switching elements for pulses lasting longer than 0.1 ns. Zh. Tekh. Fiz. 69, 77–82 (October 1999)     

Magnetic and transport properties of Ln1–xSrxCoO3 perovskite materials (Ln= La, Nd, Gd) prepared by low-temperature synthetic routes

We have used three soft-chemistry methods for the efficient preparation of Ln_1−xSr_xCoO₃ samples, adapting the combustion and the liquid-mix methods for the synthesis of the Ln = La and Gd compounds, respectively, and the preparation of Nd_1−xSr_xCoO₃ by the nitrate decomposition method. We report the magnetic and electrical properties of these relatively small particle-size materials, specially in the case of the Ln = La and Ln = Nd series (d≈0.2 μm and 0.5 μm, respectively), and we compare them to those displayed by the corresponding compounds prepared at higher temperatures. The compounds here obtained are ferromagnetic for x≥0.15 when Ln = La and for x≥0.20 when Ln = Nd and Gd. Their resistivity decreases as the doping degree increases. And, very interestingly, for compositions 0.20<x≤0.45, when Ln = La, and for x=0.40, when Ln = Nd, they show M-I transitions as the temperature rises. These are very sensitive to the application of electrical current and its polarity and the presence of magnetic fields, displaying peculiar behaviors. Paper presented at the 5th Euroconference on Solid State Ionics, Benalmádena, Spain, Sept. 13–20, 1998.     

Luminescence and lasing properties of neodymium- and uranium-activated inorganic laser liquids

An attempt was made to describe and show the possibilities of new inorganic neodynium- and uranium-activated laser liquids: SO₂-GaCl₃-NdCl₄; SO₂Cl₂-GaCl₃-NdCl₃-UO₂Cl₂; POCl₂-MCl_n-NdCl₃-UO₂Cl₂ for development and synthesis of direct nuclear reaction-excited lasers. Luminescence data presented in the work were used to calculate the luminescence parameters of the laser liquids such as oscillator strengths f, probability of spontaneous radiation A, intermultiplet luminescence branching coefficient β, cross-section for induced radiation σ, luminescence decay time τ, quantum yield η, and others. It is shown that the oscillator strengths of the normal absorption bands of Na³⁺, which play the main part in the pumping processes, exceed the oscillator strengths of Na³⁺ for aqueous and many other nonaqueous systems. In the luminescence excitation spectra of the Na³⁺ ion, bands are isolated in the range 400–1000 nm atλ _rec =1.06 μm. With excitation, luminescence occurs through the⁴F_3/2→⁴I_{9/2,11/2.13/2} channels. Luminescence spectral data are related to the lasing parameters. The threshold lasing energy is∼18 J/cm³. For a resonator with mirros h₁=100% and h₂=20, 40, 56, and 80%, the lasing energy is∼20–120 MJ/cm³ in the pumping energy range 18–180 J/cm³. The differential efficiency is ∼0.2% The substantial angular radiation divergence (θ∼4·10⁻² rad) and strong thermostatic distortions that occur in the active element (dn/dT≈−1.9·10⁻⁴K⁻¹) are a disadvantage of laser liquids. It is shown that operation of neodymium- and uranium-activated inorganic liquid lasers is stable under the present conditions. A. I. Gertsen Russian State Pedagogical University, Moika Embankment, 48, St. Petersburg, 191186, Russia. Translated from Zhurnal Prikladnoi Spektroskopii, Vol. 64, No. 5, pp. 607–619, September–October, 1997.