Highly oriented La2/3Ca1/3MnO3 films grown on silicon-on-insulator substrates by pulsed laser deposition

High quality La_2/3Ca_1/3MnO₄(LCMO) thin films have been deposited on silicon-on-insulator (SOI) substrates only buffered by yt tria-stabilized zirconia (YSZ) by using the pulsed laser deposition (PLD) technique. The results obtained from X-ray diffraction (XRD), reflection high energy electron diffraction (RHEED), scanning electron microscopy (SEM) and magnetization investigations indicate that the LCMO films are highly oriented both in-plane and out-of-plane. The Curie temperature T _c is close to 260 K and the insulator–metal (I–M) transition appears around 220 K. The conducting mechanism at low temperatures is dominated by the electron–magnon scattering. A tensile stress from the film–substrate lattice mismatch results in magnetic ‘easy axes’ in the film plane and the magnetic anisotropy energy increases with cooling. A maximum magnetoresistance (MR) is observed near 190 K, with the external magnetic field either parallel or vertical to the LCMO film plane. Moreover, the large intrinsic high-field magnetoresistance (HFMR) and the very small extrinsic low-field magnetoresistance (LFMR) again reveal that the LCMO films on SOI substrates are highly oriented thin films of good crystallinity.     

Magnetotransport and magnetotunneling in single-layer, two-layer, and three-layer Bi2Sr2Can−1CunOz (n=1,2,3) single crystals

In continuous magnetic fields H up to 28 T, we have studied the out-of-plane transport properties and tunneling characteristics of high-quality nondoped single crystals of the Bi-cuprate family: Bi₂Sr₂CuO_6+δ (Bi2201), Bi₂Sr₂CaCu₂O_8+δ (Bi2212) and Bi₂Sr₂Ca₂Cu₃O_10+δ (Bi2223) grown by an identical method. For all compounds the out-of-plane magnetotransport ρ_c(H) is negative in the temperature region where ρ_c(T) shows in the normal state a semiconducting-like temperature dependence. The negative magnetoresistance of ρ_c corresponds to the suppression of the semiconducting temperature dependence of ρ_c(T) which is found to be isotropic. For the Bi2201 compound, where the normal state can be reached in the available magnetic fields (28 T), a nearly complete suppression of the low-temperature upturn in ρ_c(T) is observed in the highest magnetic fields with a tendency towards a metallic behavior down to the lowest temperatures (0.4 K). Using the break-junction technique, especially for the Bi2212 and Bi2232 compounds, a clear superconducting gap structure can be observed. Both for temperatures above the critical temperature and for magnetic fields above the upper critical field, a pseudogap structure remains present in the tunneling spectra. The applied magnetic fields yield a stronger suppression of the superconducting state compared to that of the normal-state gap structures as manifested in ρ_c(T) transport and tunneling.     

Annealing effect on the superconductivity of In2O3–ZnO thin films

We have investigated the relation among ρ–T characteristics, superconductivity, annealing conditions and the crystallinity of polycrystalline (In₂O₃)_1−x–(ZnO)_x films. We annealed as-grown amorphous films in air by changing annealing temperature and time. It is found that the films annealed at 200 °C or 300 °C for a time over 0.5 h shows the superconductivity. Transition temperature T_c and the carrier density n are T_c < 3.3 K and n ≈ 10²⁵–10²⁶ m⁻³, respectively. Investigations for films with x = 0.01 annealed at 200 °C have revealed that the T_c, n and crystallinity depend systematically on annealing time. Further, we consider that there is a suitable annealing time for sharp resistive transition because the transition width becomes wider with longer annealing times. We studied the upper critical magnetic field H_c2(T) for the film with different annealing time. From the slope of dH_c2/dT for all films, we have obtained the resistivity ρ dependence of the coherence length ξ(0) at T = 0 K.     

Lithium ion conductive glass–ceramics with Li3Fe2(PO4)3 and YAG laser-induced local crystallization in lithium iron phosphate glasses

The glasses with the composition of 37.5Li₂O–(25 − x)Fe₂O₃–xNb₂O₅–37.5P₂O₅ (mol%) (x = 5,10,15) are prepared, and it is found that the addition of Nb₂O₅ is effective for the glass formation in the lithium iron phosphate system. The glass–ceramics consisting of Nasicon-type Li₃Fe₂(PO₄)₃ crystals with an orthorhombic structure are developed through conventional crystallization in an electric furnace, showing electrical conductivities of 3 × 10^− 6 Scm^− 1 at room temperature and the activation energies of 0.48 eV (x = 5) and 0.51 eV (x = 10) for Li⁺ ion conduction in the temperature range of 30–200 °C. A continuous wave Nd:YAG laser (wavelength: 1064 nm) with powers of 0.14–0.30 W and a scanning speed of 10 μm/s is irradiated onto the surface of the glasses, and the formation of Li₃Fe₂(PO₄)₃ crystals is confirmed from XRD analyses and micro-Raman scattering spectra. The crystallization of the precursor glasses is considered as new route for the fabrication of Li₃Fe₂(PO₄)₃ crystals being candidates for use as electrolyte materials in lithium ion secondary batteries.     

Unconventional magnetic and transport properties in Gd1−xLaxMn2Ge2 with two-dimensional arrangement of Mn atoms

In this paper, we present our recent experimental results of magnetic and transport properties of Gd_1−xLa_xMn₂Ge₂ intermetallic compounds with the ThCr₂Si₂-type layered structure. The results obtained indicate that, in GdMn₂Ge₂, a first-order transition from a collinear antiferromagnetic to a collinear ferrimagnetic state appears with decreasing temperature at T_t3, below the Néel temperature T_N. In Gd_1−xLa_xMn₂Ge₂ compounds with x=0.05 and 0.075, after ordering ferrimagnetically at T_t1, two kinds of first-order transitions from a canted ferrimagnetic to a non-collinear antiferromagnetic state and from a non-collinear antiferromagnetic to a reentrant canted ferrimagnetic state occur at T_t2 and T_t3. In Gd_0.925La_0.075Mn₂Ge₂, a field-induced metamagnetic transition from non-collinear antiferromagnetism to canted ferrimagnetism occurs at relatively low fields, accompanied by fractal like multi-step transitions, the so called “devil's stair-case”. Furthermore, a negative giant magnetoresistance (GMR) effect (Δρ/ρ15%) was observed at the field-induced metamagnetic transition. The mechanism of this negative GMR was clarified by comprehensive measurements of the resistivity on single crystals Gd_0.925La_0.075Mn₂Ge₂ and TbMn₂Ge₂. With further increasing x, only canted ferrimagnetism appears with a compensation temperature for 0.10<x<0.40, whereas no compensation behavior appears for x>0.50. The phase diagram obtained indicates that the overall magnetism is controlled by the Mn–Mn intralayer distance in the tetragonal c-plane, reflecting the two-dimensional arrangement of Mn atoms.     

Temperature dependence of the inelastic scattering in a GaAs/n-AlGaAs selectively doped heterojunction with InGaAs quantum dots

Inelastic scattering processes of two-dimensional electron gas (2DEG) have been investigated in a inverted GaAs/n-AlGaAs heterojunction with self-organized InGaAs quantum dots (QDs) embedded near the 2DEG channel where the electron population in the QDs is controllable by the gate voltage V_g. By analyzing magnetoresistance, the inelastic scattering time τ_ε have been evaluated as functions of V_g at 0.6, 0.8, 1.2, and 1.7 K. It is found that τ_ε increases with V_g below 0.8 K and decreases above 1.2 K, which suggests that the dominant scattering mechanisms below 0.8 K and above 1.2 K are different. To interpret this behavior, we have calculated the inelastic scattering time theoretically. It is found that the experimental data are well explained by a theoretical model where a 2D electron is considered to be inelastically scattered both by the other 2D electrons and by the trapped electrons in QDs. It is also found that the 2DEG–2DEG scattering is dominant at low temperature, while the 2DEG-QDs scattering becomes important as the temperature increases.     

Inelastic scattering processes in GaAs/n-AlGaAs selectively doped heterojunctions with InGaAs quantum dots

Inelastic scattering processes of the two-dimensional electron gas (2DEG) in both normal and inverted n-AlGaAs/GaAs heterojunction FET structures have been studied, for the case where InGaAs dots are embedded in the vicinity of GaAs channel. By analyzing the magnetoresistance data, the inelastic scattering time τ_in is determined as a function of the concentration N_2D of 2D electrons and shown to be reduced by 10–40% by the presence of InGaAs dots. By investigating a GaAs/n-AlGaAs inverted heterojunction FET with embedded InGaAs dots, we have varied the percentage P_oc of charged dots filled with an electron and found that τ_in decreases as P_oc increases, indicating that the inelastic scattering rate of 2DEG by charged dots is higher than that by the neutral ones.     

Transport properties of single crystal

Transport properties of BaNi₂P₂ single crystals prepared by high-pressure synthesis method have been investigated. The temperature dependence of the resistivity is that of a typical metal with the anisotropy ratio ρ/ρ of 6.3 and suggests that electron–phonon interaction dominates the scattering mechanism. We have also found that the Hall effect and the magnetoresistance can be explained by a two-carrier model which is consistent with a multiple-band structure with both hole and electron characters.     

The Mechanism of Magnetically Tuned Singlet–Triplet Avoided Crossings in the ÃA2– A1 40 Band of Thioformaldehyde H2C=S

Magnetically tuned singlet–triplet perturbations in the 4¹Ã¹A₂–2¹3¹ã³A₂ system of thioformaldehyde, found in ortho-rotational states (I = 1, the two hydrogen spins parallel) have been identified as being caused by vibronic spin–orbit coupling. This perturbation mechanism has been confirmed in several avoided crossings observed in this work for para states (I = 0, hydrogen spins antiparallel) which are much stronger. Parametrization of the theory has led to a quantitative understanding of the experimental frequency-field relations, and to an accurate prediction of the rovibrational energies of the triplet state. This in turn permitted the detection of about 100 Doppler-limited 2¹3¹ã³A₂–0^{0 1}A₁ rovibronic transitions which led into fine structure states. The combined data was then used to determine a set of rotational, fine, and hyperfine triplet-state parameters, the term value T₀(2¹3¹ã³A₂) = (16 685.385 ± 0.002) cm⁻¹, and the spin–orbit vibronic singlet–triplet coupling constant, W_ST = (0.0691 ± 0.0016) cm⁻¹. A large number of frequency perturbations observed in the crossings, ranging from 2 to 300 MHz, can be explained with this single parameter.     

Contribution to the Analysis of theA2←XA1“Wulf” Transition of Ozone by High-Resolution Fourier Transform Spectrometry

The analysis of the rotational structure of the high-resolution Fourier transform 0⁰₀absorption spectrum of the³A₂←X¹A₁band system of the “Wulf” transition of the isotopomer¹⁶O₃of ozone is reported for the first time. With a near pure case (b) coupling model for the upper triplet state, we have assigned a significant portion of the spectrum, mainly theF₁(J=N+ 1) andF₂(J=N) spin components, primarily in the lower frequency region of the band. The lines corresponding to theF₃(J=N− 1) component are weak at lower frequencies and heavily congested in the central and higher frequency regions of the spectrum. Perturbations and predissociation phenomena have reduced the effective lifetime of the metastable³A₂state and have also limited the number of transitions included in the least-squares fit of the band. Approximately 100 lines have been assigned in the range from 9100–9550 cm⁻¹. Three rotational, three centrifugal distortion, three spin–rotation, and one spin–spin constant were varied. The geometry of the molecule in the³A₂state, as determined from these constants, isr= 1.345 Å and θ = 98.9°, in good agreement withab initioresults.     

New ferromagnetic La3Co2TaO9 double perovskite: Structural and magnetic properties

The new double perovskite La₃Co₂TaO₉ has been prepared by a solid-state procedure. The crystal and magnetic structures have been studied from X-ray powder diffraction (XRPD) and neutron powder diffraction (NPD) data. Rietveld refinements were performed in the monoclinic space group P2₁/n. The structure consists of an ordered array of alternating B′O₆ and B″O₆ octahedra sharing corners, tilted along the three pseudocubic axes according to the Glazer notation a⁻b⁻c⁺. Rietveld refinements show that at RT the cell parameters are a=5.6005(7) Å, b=5.6931(7) Å, c=7.9429(9) Å and β=89.9539(7)°, and the refined crystallographic formula of this “double perovskite” can be written as La₂(Co)_2d(Co_1/3Ta_2/3)_2cO₆. Magnetization measurements and low-temperature NPD data show that the perovskite is a ferromagnet with T_C=72 K. At high T it follows the Curie–Weiss law with an effective magnetic moment of 3.82μ_B per Co ion which is very close to spin only Co²⁺ (HS).     

High-resolution infrared spectra of HCF3 in the ν6 (500 cm) and 2ν6 (1000 cm) regions: rovibrational analysis and accurate determination of the ground state constants C0 and DK

The high-resolution infrared spectrum of HCF₃ was studied in the ν₆ fundamental (near 500 cm⁻¹) and in the 2ν₆ overtones (near 1000 cm⁻¹) regions. The present study reports on the analysis of the hot bands in the ν₆ region, as well as the first observation and assignment of the 2ν₆² perpendicular band. Using ν₆, 2ν₆^±2–ν₆^±1 and 2ν₆² experimental wavenumbers, accurate coefficients C₀ and D_K⁰ of the K-dependent ground-state energy terms were obtained, using the so-called “loop method.” Ground-state energy differences Δ(K,J)=E₀(K,J)−E₀(K−3,J) were obtained for K=3–30. A least-squares fit of 81 such differences gave the following results (in cm⁻¹): C₀=0.1892550(15); D_K⁰=2.779(26) × 10⁻⁷.     

Analysis of the high resolution spectrum of the fundamental bandsv2 andv5 of12CH3F and their interactions

Thev ₂(A₁) andv ⁵(E) fundamental vibration-rotation bands of¹²CH₃F have been recorded under high resolution (0.015 to 0.020 cm^–1) in the spectral range of 1460 cm^–1. About 1100 transitions have been assigned. The Coriolis interaction between v₂=1 and v₅=1, and the l(2,-1) interaction in v₅=1 have been rigorously treated. Sixteen molecular constants have been determined from a least squares analysis. They reproduce the observed data with an overall standard deviation of 0.0037 cm^–1.     

Interpretation of scanning tunneling microscopy and atomic force microscopy images of 1T-TiS2

The surface of 1T-TiS₂ was examined by scanning tunneling microscopy (STM) and atomic force microscopy (AFM). The STM and AFM images of this compound were interpreted on the basis of the partial electron density ρ(r,E_F) and total electron density ρ(r) of a slab which consists of six (001) 1T-TiS₂ layers. Electronic structure calculations were performed using the ab-initio Hartree–Fock program crystal. It was found that the bright spots in experimental STM images correspond to sulfur atoms at both positive and negative bias voltages. The AFM image showed a periodicity which can be explained by the atomic corrugation at the surface. Structural defects on the surface were also investigated, and their interpretation constitutes experimental proof that only sulfur atoms were detected by scanning probe microscopies.     

The bending energy levels of C2H2

Absorption spectra of C₂H₂ have been recorded between 50 and 1450 cm⁻¹, with a resolution always better than 0.005 cm⁻¹, using two different Fourier transform spectrometers. Analysis of the data provided two sets of results. First, the bending levels with Σ_t V_t(t = 4, 5) ≤ 2 were characterized by a coherent set of 34 parameters derived from the simultaneous analysis of 15 bands, performed using a matrix Hamiltonian. The following main parameters were obtained (in cm⁻¹): ω₄⁰ = 608.985196(14), ω₅⁰ = 729.157564(10); B₀ = 1.17664632(18), α₄ = −1.353535(86) × 10⁻³, α₅ = −2.232075(40) × 10⁻³; q₄⁰ = 5.24858(12) × 10⁻³, and q₅⁰ = 4.66044(12) × 10⁻³, with the errors (1σ) on the last quoted digit. Second, a more complete set of bending levels with Σ_t V_t ≤ 4, some of which have never previously been reported, and also including V₂ = 1 have been fitted to 80 parameters. This simultaneous fit involved 43 bands and used the same full Hamiltonian matrix. Some perturbations which affect the higher excited levels are discussed.     

On the rise of the proton structure function F2 towards low x

A measurement of the derivative (∂ lnF₂/∂ lnx)_Q²≡−λ(x,Q²) of the proton structure function F₂ is presented in the low x domain of deeply inelastic positron–proton scattering. For 5×10⁻⁵x0.01 and Q²1.5 GeV², λ(x,Q²) is found to be independent of x and to increase linearly with lnQ².     

Analysis of the nuclear quadrupole interaction of Disulfur Dichloride, S2Cl2

Pure rotational spectra of S₂³⁵Cl₂ and S₂³⁵Cl³⁷Cl have been observed using a Fourier-transform microwave spectrometer. An analysis of the hyperfine structure made by considering the nuclear spin statistics showed that S₂Cl₂ has C₂symmetry, where the hyperfine splittings due to the two Cl nuclei were analyzed precisely. The nuclear quadrupole coupling constants including the off-diagonal (χ_ab, χ_ac, χ_bc) components and the nuclear spin–rotation interaction constants associated with the two Cl nuclei have been determined for the first time. We have shown that the nuclear quadrupole interaction plays an important role in the ortho–para mixing.     

Photoinduced non-linear optical diagnostic of SiNxOy/Si111 interfaces

Anisotropic (elliptically polarized) photoinduced second harmonic generation (PISHG) in SiN_xO_y/Si1 1 1 films was proposed for contact-less monitoring of specimens with different nitrogen to oxygen (N/O) ratios. As a source for the photoinducing light, we used a nitrogen Q-switched pulse laser at wavelengths of 315, 337 and 354 nm as well as doubled frequency YAG–Nd laser wavelength (λ=530 nm). The YAG : Nd pulse laser (λ=1.06 μm; W=30 MW; τ=10–50 ps) was used to measure the PISHG. All measurements were done in a reflected light regime. We found that the output PISHG signal was sensitive to the N/O ratio and the film thickness. Measurements of the PISHG versus pumping wavelengths, powers, incident angles as well as independent measurements of the DC-electric field induced second harmonic generation indicate the major role played in this process by axially symmetric photoexcited electron–phonon states. The SiN_xO_y films were synthesized using a technique of chemical evaporation at low pressures. Films with thickness varying between 10 and 30 nm and with an N/O ratio between 0 and 1 were obtained. Electrostatic potential distribution at the Si1 1 1–SiN_xO_y interfaces was calculated. Comparison of the experimentally obtained and quantum chemically calculated PISHG data are presented. High sensitivity of anisotropic PISHG to the N/O ratio and film thickness is revealed. The role of the electron–phonon interactions in the dependencies observed is discussed. We have shown that the PISHG method has higher sensitivity than the traditional extended X-ray absorption fine structure spectroscopic and linear optical method for films with the N/O ratio higher than 0.50.     

High-resolution infrared and millimeterwave spectra of the v3=1 vibrational state of NF3 at 907 cm

The ν₃^±1 perpendicular band of ¹⁴NF₃ ( cm⁻¹) has been studied with a resolution of 2.5 × 10⁻³ cm⁻¹, and 3682 infrared (IR) transitions (J_max=55, K_max=45) have been assigned. These transitions were complemented by 183 millimeterwave (MMW) rotational lines (J_max=25, K_max=19) in the 150–550 GHz region (precision 50–100 kHz). The kl=+1 level reveals a strong A₁/A₂ splitting due to the l(2,2) rotational interaction (q=−4.05 × 10⁻³ cm⁻¹) while the kl=−2 and +4 levels exhibit small A₁/A₂ splittings due to l(2,−4) and l(0,6) rotational interactions. All these splittings were observed by both experimental methods. Assuming the v₃=1 vibrational state as isolated, a Hamiltonian model of interactions in the D reduction, with l(2,−1) rotational interaction (r=−1.96 × 10⁻⁴ cm⁻¹) added, accounted for the observations. A set of 26 molecular constants reproduced the IR observations with σ_IR=0.175 × 10⁻³ cm⁻¹ and the MMW data with σ_MMW=134 kHz. The Q reduction was also performed and found of comparable quality while the QD reduction behaved poorly. This may be explained by a predicted Coriolis interaction between v₃=1 and v₁=1 (A₁, 1032.001 cm⁻¹) which induces a slow convergence of the Hamiltonian in the QD reduction but has no major influence on the other reductions. The experimental equilibrium structure could be calculated as: r_e(N–F)=1.3676 Å and (FNF)=101.84°.     

Transport properties and magnetoresistance in La0.8Te0.2MnO3/ZrO2 composites

The transport properties and magnetoresistance of electron-doped manganate / insulator composites (La_0.8Te_0.2MnO₃)_{1 - x}/(ZrO₂)_x (x=0, 0.3, and 0.5) are investigated. It is found that the metal-insulator transition temperature of this system shifts to a lower value as the ZrO₂ content increases. The introduction of ZrO₂ enhances both the domain scattering and electron relative scattering in the metal transport region. In the adiabatic small polaron hopping transport region, the thermal activation energy seems invariable regardless of the ZrO₂ content. The application of a magnetic field promotes the charge transportation capabilities of the composites, and the magnetoresistance is enhanced with an increase of the ZrO₂ content. This could be attributed to the more remarkable modification effect of magnetic field on ordering degree in the composites than in pure La_0.8Te_0.2MnO₃.