Optically induced magnetization in diluted magnetic quantum dots

We report the effect of intense laser field on donor impurities in a semimagnetic Cd_1-xinMn_xinTe/Cd_1-xoutMn_xoutTe quantum dot. The spin polaronic energy of different Mn²⁺ is evaluated for different dot radii using a mean field theory in the presence of laser field. Magnetization is calculated for various concentrations of Mn²⁺ ions with different dot sizes. Significant magnetization of Mn spins can be obtained through the formation of polarized exciton magnetic polarons (EMPs). A rapid decrease of the laser dressed donor ionization energy for different values of dot sizes with increasing field intensity is predicted. Also, it is found that the polarization of EMPs increases rapidly at higher excitation energies.     

The carrier “antibinding” in quantum dots: a charge separation effect

We show that the carrier “antibinding” observed recently in semiconductor quantum dots, i.e., the fact that the ground state energy of two electron-hole pairs goes above twice the ground-state energy of one pair, can entirely be assigned to a charge separation effect, whatever its origin. In the absence of external electric field, this charge separation comes from different “spreading-out” of the electron and hole wavefunctions linked to the finite height of the barriers. When the dot size shrinks, the two-pair energy always stays below when the barriers are infinite. On the opposite, because barriers are less efficient for small dots, the energy of two-pairs in a dot with finite barriers, ends by behaving like the one in bulk, i.e., by going above twice the one-pair energy when the pairs get too close. For a full understanding of this “antibinding” effect, we have also reconsidered the case of one pair plus one carrier. We find that, while the carriers just have to spread out of the dot differently for the “antibinding” of two-pairs to appear, this “antibinding” for one pair plus one carrier only appears if this carrier is the one which spreads out the less. In addition a remarkable sum rule exists between the “binding energies” of two pairs and of one pair plus one carrier.     

Shape dependent electronic structure and exciton dynamics in small In(Ga)As quantum dots

We present a study of the primary optical transitions and recombination dynamics in InGaAs self-assembled quantum nanostructures with different shape. Starting from the same quantum dot seeding layer, and depending on the overgrowth conditions, these new nanostructures can be tailored in shape and are characterized by heights lower than 2 nm and base lengths around 100 nm. The geometrical shape strongly influences the electronic and optical properties of these nanostructuctures. We measure for them ground state optical transitions in the range 1.25–1.35 eV and varying energy splitting between their excited states. The temperature dependence of the exciton recombination dynamics is reported focusing on the intermediate temperature regime (before thermal escape begins to be important). In this range, an important increase of the effective photoluminescence decay time is observed and attributed to the state filling and exciton thermalization between excited and ground states. A rate equation model is also developed reproducing quite well the observed exciton dynamics.     

Finite size effects on the optical transitions in quantum rings under a magnetic field

We present a theoretical study of the energy spectrum of single electron and hole states in quantum dots of annular geometry under a high magnetic field along the ring axis in the frame of uncorrelated electron-hole theory. We predict the periodic disappearance of the optical emission of the electron-hole pair as the magnetic field increases, as a consequence of the finite height of the barriers. The model has been applied to semiconductor rings of various internal and external radii, giving as limiting cases the disk and antidot.     

Four-wave mixing in coupled semiconductor quantum dots

We present a theoretical analysis of four-wave mixing in coupled quantum dots subject to inhomogeneous broadening. For the biexciton transitions, a clear signature of interdot-coupling appears in the spectra. The possibility of experimental observation is discussed.     

Zeeman mapping of exciton localization in self-assembled CdSe quantum dots using diluted magnetic semiconductors

Localization of exciton wavefunctions in self-assembled quantum dots (QDs) has been investigated using CdSe QDs embedded in ZnMnSe. This system was chosen so as to make use of the giant Zeeman splitting in the diluted magnetic semiconductor (DMS) ZnMnSe, which enables one to map how the exciton wavefunction is distributed between the QDs and the surrounding matrix. Two series of CdSe QDs in ZnMnSe were prepared for this investigation by molecular beam epitaxy (MBE), either by varying the CdSe coverage while keeping a constant Mn concentration in ZnMnSe; or by varying the Mn concentration in the matrix while maintaining a constant CdSe coverage. Photoluminescence (PL) experiments show a systematic evolution of the CdSe QDs with increasing CdSe coverage; and also reveal the role of Mn in nucleating (“seeding”) the self-assembly of the QDs. By simultaneously measuring the Zeeman shifts of the PL peaks from both the CdSe QDs and their ZnMnSe matrix, we are able to extract information on exciton localization in the QDs and its dependence on the degree of development of the self-assembled CdSe QDs with increasing CdSe coverage.     

Stability of neutral and negative donor impurity in a semiconductor cylindrical quantum dot

The stability of neutral (D⁰) and negative charged donor (D⁻) on- and off-center in anisotropic cylindrical quantum dot (CQD) is studied by use of a variational approach. Two-parameter anisotropic trial wave function which includes electron-correlation effects is utilized, to explore strong and weak confinement regions. A comparison between one and two-parameter trial wave functions results is introduced. The finite barrier height and the CQD dimensions, dependence of the “stability and the binding energy” of the D⁰ and the D⁻ is obtained. It has been shown that the donor's stability dependent on CQD dimensions and the confinement potential in strong confinement region but in weak confinement region, the stability of D⁰ and D⁻ is dependent strongly on the quantum dot (QD) radius R. It has been found that the donors D⁰ and D⁻ off-center are less stable than the on-center impurities, and also the off-center donors more stable in small CQDs. It has shown that the stability of D⁻ depends on the energy of the excess electron.     

Effects of an electric field on the confined hydrogen impurity states in a spherical parabolic quantum dot

In this paper, we studied the effects of an electric field on a hydrogenic impurity confined in a spherical parabolic quantum dot using nondegenerate and degenerate perturbation methods. The binding energies of the ground and three low-excited states are calculated as a function of the confinement strength and as a function of the intensity of an applied electric field. Moreover, we computed the oscillator strength and the second-order nonlinear optical rectification coefficient based on the computed energies and wave functions. The results show that the electric and optical properties of hydrogenic impurity states are strongly affected by the confinement strength and the applied electric field.     

Optical solitons in semiconductor quantum dot waveguides

A theory of self-induced transparency for a TM-mode propagating in a planar semiconductor waveguide sandwiched between two dielectric media is developed. A transition layer between the waveguide and one of the connected media is described using a model of a two-dimensional sheet of quantum dots. Explicit analytical expressions for the optical soliton in the presence of single-excitonic and biexcitonic transitions are obtained with realistic parameters which can be reached in current experiments.     

Intersubband optical absorption coefficients and refractive index changes in a parabolic cylinder quantum dot

Optical absorption coefficients and refractive index changes associated with intersubband transition in a parabolic cylinder quantum dot are theoretically investigated. In this regard, the electronic structure of the dot is studied using the one band effective mass theory, and by means of the compact-density matrix approach the linear and nonlinear optical absorption coefficients and refractive index changes are calculated. The effects of the size of the dot, optical intensity and electromagnetic field polarization on the optical absorption coefficient and refractive index changes are investigated. It is found that absorption and refractive index changes are strongly affected not only by the size of the dot but also by optical intensity and the electromagnetic field polarization.     

Bound states of Dirac electrons in a graphene-based magnetic quantum dot

We investigate the magnetically confined states of the massless Dirac fermions in a graphene quantum dot formed by the inhomogeneous distributions of the magnetic fields inside and outside the dot. The calculated energy spectrum exhibits quite different features with and without the magnetic field inside the dot. It is found that the degeneracy of the relativistic Landau level with negative angular momenta can be lifted, and this degeneracy breaking can be modulated by the magnetic field inside the dot. Moreover, such a system can form the strongly localized states within the dot and along its boundary, especially with the magnetic field inside the dot.     

Electronic structure and g factors of narrow-gap zinc-blende nanowires and nanorods

The Hamiltonian in the framework of eight-band effective-mass approximation of the zinc-blende nanowires and nanorods in the presence of external homogeneous magnetic field is given in the cylindrical coordinate. The electronic structure, optical properties, magnetic energy levels, and g factors of the nanowires and nanorods are calculated. It is found that the electron states consist of many hole-state components, due to the coupling of the conduction band and valence band. For the normal bands which are monotone functions of |k_z|, long nanorods can be modeled by the nanowires, the energy levels of the nanorods approximately equal the values of the energy band E(k_z) of the nanowires with the same radius at a special k_z, where k_z is the wave vector in the wire direction. Due to the coupling of the states, some of the hole energy bands of the nanowires have their highest points at k_z≠0. Especially, the highest hole state of the InSb nanowires is not at the k_z=0 point. It is an indirect band gap. For these abnormal bands, nanorods can not be modeled by the nanowires. The energy levels of the nanorods show an interesting plait-like pattern. The linear polarization factor is zero, when the aspect ratio L/2R is smaller than 1, and increases as the length increases. The g_z and g_x factors as functions of the k_z, radius R and length L are calculated for the wires and rods, respectively. For the wires, the g_z of the electron ground state increases, and the g_z of the hole ground state decreases first, then increases with the k_z increasing. For the rods, the g_z and g_x of the electron ground state decrease as the R or the L increases. The g_x of the hole ground state decreases, the g_z of the hole ground state increases with the L increasing. The variation of the g_z of the wires with the k_z is in agreement with the variation of the g_z of the rods with the L.     

Luminescence of a semiconductor quantum dot system

A microscopic theory is used to study photoluminescence of semiconductor quantum dots under the influence of Coulomb and carrier-photon correlation effects beyond the Hartree-Fock level. We investigate the emission spectrum and the decay properties of the time-resolved luminescence from initially excited quantum dots. The influence of the correlations is included within a cluster expansion scheme up to the singlet-doublet level.     

Nonlinear optical rectification in parabolic quantum dots in the presence of electric and magnetic fields

The optical rectification (OR) coefficient in a parabolic quantum dots (QDs) subject to applied electric and magnetic fields is theoretically investigated in the framework of the compact-density-matrix approach and an iterative method. The confined wave functions and energies of electrons in the QDs are calculated in the effective-mass approximation. Numerical results are presented for typical GaAs/AlGaAs parabolic QDs. These results show that the OR coefficient strongly depends on the radius of QDs and the magnitude of electric and magnetic fields. And the peak shifts to the aspect of high energy when considering the influence of electric and magnetic fields.     

Magneto-optical study of nonmagnetic quantum dots coupled to a magnetic semiconductor quantum well

We have investigated a series of double-layer structures consisting of a layer of self-assembled non-magnetic CdSe quantum dots (QDs) separated by a thin ZnSe barrier from a ZnCdMnSe diluted magnetic semiconductor (DMSs) quantum well (QW). In the series, the thickness of the ZnSe barrier ranged between 12 and 40 nm. We observe two clearly defined photoluminescence (PL) peaks in all samples, corresponding to the CdSe QDs and the ZnCdMnSe QW, respectively. The PL intensity of the QW peak is observed to decrease systematically relative to the QD peak as the thickness of the ZnSe barrier decreases, indicating a corresponding increase in carrier tunneling from the QW to the QDs. Furthermore, polarization-selective PL measurements reveal that the degree of polarization of the PL emitted by the CdSe QDs increases with decreasing thickness of the ZnSe barriers. The observed behavior is discussed in terms of anti-parallel spin interaction between carriers localized in the non-magnetic QDs and in the magnetic QWs.     

The second-harmonic generation in parabolic quantum dots in the presence of electric and magnetic fields

The second-harmonic generation (SHG) coefficient for parabolic quantum dots (QDs) subject to applied electric and magnetic fields is theoretically investigated, within the framework of the compact-density-matrix approach and an iterative method. Numerical results are presented for typical GaAs/AlGaAs parabolic QDs. These results show that the radius of QD and the magnitude of electric and magnetic fields have a great influence on the SHG coefficient. And the peak shifts to the aspect of high energy when considering the influence of electric and magnetic fields. Moreover, the SHG coefficient also depends sensitively on the relaxation rate of the spherical QD system.     

Influence of annealing temperature on the photoluminescence properties of ZnO quantum dots

The properties of ZnO quantum dots (QDs) synthesized by the sol-gel process are reported. The primary focus is on investigating the origin of the visible emission from ZnO QDs by the annealing process. The X-ray diffraction results show that ZnO QDs have hexagonal wurtzite structure and the QD diameter estimated from Debye-Scherrer formula is 8.9 nm, which has a good agreement with the results from transmission electron microscopy images and the theoretical calculation based on the Potential Morphing Method. The room-temperature photoluminescence spectra reveal that the ultraviolet excitation band has a red shift. Meanwhile, the main band of the visible emission shifts to the green luminescence band from the yellow luminescence one with the increase of the annealing temperature. A lot of oxygen atoms enter into Zn vacancies and form oxygen antisites with increasing temperature. That is probably the reason for the change of the visible emission band.     

Asymmetrical shapes of optical line profiles in individual quantum dots

The experimental data on individual quantum dots show that the optical line can have the form of a very narrow spike accompanied by a shoulder. So far the shoulder has been found at the lower energy side of the narrow peak. In the present work, we study theoretically the origin of such a lineshape. We shall use a simple model of quantum dot and a simple approximation to the electronic excitation. The electronic system will be assumed to be coupled to the longitudinal optical phonons. We will show that the electronic multiple scattering on the optical phonons can then give us an explanation of the observed optical lineshape.     

Estimation of built-in dipole moment in InAs quantum dots

We have fabricated a Schottky diode embedding InAs self-assembled quantum dots (QDs) grown by alternately supplying In and As sources. As a function of the electric field, we have investigated the photoluminescence (PL) for the InAs QDs in the Schottky diode at 300 K. We controlled the electric field in order that the QD layer was located in the depletion region of Schottky diode. The relationship between the electric field and the depletion width of the Schottky diode was deduced through the capacitance-voltage measurement. The Stark shift was observed in PL spectra for QDs; the energy of the PL line shifted to the lower energy as the electric field increased. It was also observed that the PL emission intensity gradually decreased. By the fitting to the experimental data, we determined a built-in dipole moment, corresponding to an electron-hole separation.     

Hydrostatic pressure effects on impurity states in InAs/GaAs quantum dot

Within the framework of effective-mass approximation, the hydrostatic pressure effects on the donor binding energy of a hydrogenic impurity in InAs/GaAs self-assembled quantum dot(QD) are investigated by means of a variational method. Numerical results show that the donor binding energy increases when the hydrostatic pressure increases for any impurity position and QD size. Moreover, the hydrostatic pressure has a remarkable influence on the donor binding energy for small QD. Realistic cases, including the impurity in the QD and the surrounding barrier, are considered.